NJL1302D [ONSEMI]

Complementary ThermalTrak Transistors; 补充ThermalTrak晶体管
NJL1302D
型号: NJL1302D
厂家: ONSEMI    ONSEMI
描述:

Complementary ThermalTrak Transistors
补充ThermalTrak晶体管

晶体 晶体管 功率双极晶体管 放大器 PC 局域网
文件: 总8页 (文件大小:106K)
中文:  中文翻译
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NJL3281D (NPN)  
NJL1302D (PNP)  
Product Preview  
Complementary  
ThermalTrak Transistors  
http://onsemi.com  
The ThermalTrak family of devices has been designed to eliminate  
thermal equilibrium lag time and bias trimming in audio amplifier  
applications. They can also be used in other applications as transistor  
die protection devices.  
BIPOLAR POWER  
TRANSISTORS  
15 A, 230 V, 200 W  
Features  
Thermally Matched Bias Diode  
Instant Thermal Bias Tracking  
Absolute Thermal Integrity  
High Safe Operating Area  
Benefits  
Eliminates Thermal Equilibrium Lag Time and Bias Trimming  
Superior Sound Quality Through Improved Dynamic Temperature  
Response  
TO−264, 5 LEAD  
CASE 340AA  
STYLE 1  
Significantly Improved Bias Stability  
Simplified Assembly  
Reduced Labor Costs  
Reduced Component Count  
MARKING DIAGRAM  
SCHEMATIC  
High Reliability  
Applications  
High−End Consumer Audio Products  
Home Amplifiers  
NJLxxxxD  
AYYWW  
Home Receivers  
Professional Audio Amplifiers  
Theater and Stadium Sound Systems  
Public Address Systems (PAs)  
xxxx  
A
YY  
= Specific Device Code  
= Assembly Location  
= Year  
WW  
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
December, 2004 − Rev. P1  
NJL3281D/D  
NJL3281D (NPN) NJL1302D (PNP)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
230  
230  
5
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
V
CEO  
V
CBO  
V
EBO  
Collector−Emitter Voltage − 1.5 V  
Collector Current  
V
CEX  
230  
− Continuous  
− Peak (Note 1)  
I
C
15  
25  
Base Current − Continuous  
I
B
1.5  
Adc  
Total Power Dissipation @ T = 25°C  
Derate Above 25°C  
P
D
200  
1.43  
W
W/°C  
C
Operating and Storage Junction Temperature Range  
DC Blocking Voltage  
T , T  
65 to +150  
°C  
V
J
stg  
V
R
200  
1.0  
Average Rectified Forward Current  
I
A
F(AV)  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Case  
R
0.625  
°C/W  
q
JC  
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit  
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,  
damage may occur and reliability may be affected.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.  
ATTRIBUTES  
Characteristic  
Human Body Model  
Value  
ESD Protection  
>8000 V  
> 400 V  
Machine Model  
Flammability Rating  
UL 94 V−0 @ 0.125 in  
ORDERING INFORMATION  
Device  
Package  
TO−264  
TO−264  
Shipping  
NJL3281D  
NJL1302D  
25 Units / Rail  
25 Units / Rail  
http://onsemi.com  
2
 
NJL3281D (NPN) NJL1302D (PNP)  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector−Emitter Sustaining Voltage  
V
Vdc  
mAdc  
mAdc  
CEO(sus)  
(I = 100 mAdc, I = 0)  
230  
50  
5
C
B
Collector Cutoff Current  
I
CBO  
(V = 230 Vdc, I = 0)  
CB  
E
Emitter Cutoff Current  
I
EBO  
(V = 5 Vdc, I = 0)  
EB  
C
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = 100 mAdc, V = 5 Vdc)  
60  
60  
60  
60  
60  
45  
12  
175  
175  
175  
175  
175  
C
CE  
(I = 1 Adc, V = 5 Vdc)  
C
CE  
(I = 3 Adc, V = 5 Vdc)  
C
CE  
(I = 5 Adc, V = 5 Vdc)  
C
CE  
CE  
(I = 7 Adc, V = 5 Vdc)  
C
(I = 8 Adc, V = 5 Vdc)  
C
CE  
(I = 15 Adc, V = 5 Vdc)  
C
CE  
Collector−Emitter Saturation Voltage  
(I = 10 Adc, I = 1 Adc)  
V
Vdc  
CE(sat)  
3
C
B
DYNAMIC CHARACTERISTICS  
Current−Gain − Bandwidth Product  
f
MHz  
pF  
T
(I = 1 Adc, V = 5 Vdc, f  
= 1 MHz)  
30  
C
CE  
test  
Output Capacitance  
C
ob  
(V = 10 Vdc, I = 0, f = 1 MHz)  
600  
CB  
E
test  
Maximum Instantaneous Forward Voltage (Note 2)  
(i = 1.0 A, T = 25°C)  
v
V
F
1.0  
0.83  
F
J
(i = 1.0 A, T = 150°C)  
F
J
Maximum Instantaneous Reverse Current (Note 2)  
(Rated dc Voltage, T = 25°C)  
i
R
mA  
10  
100  
J
(Rated dc Voltage, T = 150°C)  
J
Maximum Reverse Recovery Time  
t
rr  
100  
ns  
(i = 1.0 A, di/dt = 50 A/ms)  
F
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.  
http://onsemi.com  
3
 
NJL3281D (NPN) NJL1302D (PNP)  
TYPICAL CHARACTERISTICS  
PNP NJL1302D  
NPN NJL3281D  
60  
50  
40  
30  
20  
V
CE  
= 10 V  
V
CE  
= 10 V  
50  
40  
30  
20  
5 V  
5 V  
T = 25°C  
10  
0
T = 25°C  
J
J
10  
0
f
= 1 MHz  
f
= 1 MHz  
test  
test  
0.1  
1.0  
10  
0.1  
1.0  
10  
I , COLLECTOR CURRENT (AMPS)  
C
I , COLLECTOR CURRENT (AMPS)  
C
Figure 1. Typical Current Gain  
Bandwidth Product  
Figure 2. Typical Current Gain  
Bandwidth Product  
PNP NJL1302D  
NPN NJL3281D  
1000  
1000  
25°C  
T = 100°C  
J
T = 100°C  
J
25°C  
100  
100  
−ꢁ25°C  
−ꢁ25°C  
V
CE  
= 20 V  
V
CE  
= 20 V  
10  
10  
0.1  
1.0  
10  
100  
0.1  
1.0  
10  
100  
I , COLLECTOR CURRENT (AMPS)  
C
I , COLLECTOR CURRENT (AMPS)  
C
Figure 3. DC Current Gain, VCE = 20 V  
PNP NJL1302D  
Figure 4. DC Current Gain, VCE = 20 V  
NPN NJL3281D  
1000  
1000  
25°C  
T = 100°C  
J
T = 100°C  
J
25°C  
100  
100  
−ꢁ25°C  
−ꢁ25°C  
V
CE  
= 5 V  
V
CE  
= 5 V  
10  
10  
0.1  
1.0  
10  
100  
0.1  
1.0  
10  
100  
I , COLLECTOR CURRENT (AMPS)  
C
I , COLLECTOR CURRENT (AMPS)  
C
Figure 5. DC Current Gain, VCE = 5 V  
Figure 6. DC Current Gain, VCE = 5 V  
http://onsemi.com  
4
NJL3281D (NPN) NJL1302D (PNP)  
TYPICAL CHARACTERISTICS  
PNP NJL1302D  
NPN NJL3281D  
45  
40  
45  
40  
35  
30  
25  
20  
15  
10  
I = 2 A  
B
1.5 A  
I = 2 A  
B
1.5 A  
35  
30  
25  
20  
15  
10  
1 A  
0.5 A  
1 A  
0.5 A  
5.0  
0
T = 25°C  
J
5.0  
0
T = 25°C  
J
0
5.0  
10  
15  
20  
25  
0
5.0  
V , COLLECTOR−EMITTER VOLTAGE (VOLTS)  
CE  
10  
15  
20  
25  
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)  
CE  
Figure 7. Typical Output Characteristics  
PNP NJL1302D  
Figure 8. Typical Output Characteristics  
NPN NJL3281D  
2.5  
2.0  
3.0  
2.5  
2.0  
1.5  
1.0  
T = 25°C  
J
I /I = 10  
T = 25°C  
J
I /I = 10  
C B  
C B  
V
BE(sat)  
1.5  
1.0  
V
BE(sat)  
0.5  
0
0.5  
0
V
V
CE(sat)  
CE(sat)  
0.1  
1.0  
10  
100  
0.1  
1.0  
10  
100  
I , COLLECTOR CURRENT (AMPS)  
C
I , COLLECTOR CURRENT (AMPS)  
C
Figure 9. Typical Saturation Voltages  
PNP NJL1302D  
Figure 10. Typical Saturation Voltages  
NPN NJL3281D  
10  
10  
T = 25°C  
J
T = 25°C  
J
V
CE  
= 5 V (DASHED)  
V
CE  
= 5 V (DASHED)  
1.0  
1.0  
V
CE  
= 20 V (SOLID)  
V
CE  
= 20 V (SOLID)  
0.1  
0.1  
0.1  
1.0  
10  
100  
0.1  
1.0  
10  
100  
I , COLLECTOR CURRENT (AMPS)  
C
I , COLLECTOR CURRENT (AMPS)  
C
Figure 11. Typical Base−Emitter Voltage  
Figure 12. Typical Base−Emitter Voltage  
http://onsemi.com  
5
NJL3281D (NPN) NJL1302D (PNP)  
TYPICAL CHARACTERISTICS  
100  
10  
There are two limitations on the power handling ability of  
a transistor; average junction temperature and secondary  
breakdown. Safe operating area curves indicate I − V  
limits of the transistor that must be observed for reliable  
operation; i.e., the transistor must not be subjected to greater  
dissipation than the curves indicate.  
10 ms  
C
CE  
50 ms  
1 sec  
The data of Figure 13 is based on T  
= 150°C; T is  
J(pk)  
C
1.0  
0.1  
variable depending on conditions. At high case temperatures,  
thermal limitations will reduce the power than can be handled  
to values less than the limitations imposed by second  
breakdown.  
250 ms  
1.0  
10  
100  
1000  
V
CE  
, COLLECTOR−EMITTER VOLTAGE (VOLTS)  
Figure 13. Active Region Safe Operating Area  
PNP NJL1302D  
NPN NJL3281D  
10000  
10000  
C
ib  
C
ib  
C
ob  
1000  
1000  
C
ob  
T = 25°C  
J
T = 25°C  
J
f
= 1 MHz  
f
= 1 MHz  
test  
test  
100  
100  
0.1  
1.0  
10  
100  
0.1  
1.0  
10  
100  
V , REVERSE VOLTAGE (VOLTS)  
R
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 14. NJL1302D Typical Capacitance  
Figure 15. NJL3281D Typical Capacitance  
100  
10  
1
10  
100°C  
T
C
= 175°C  
T = 175°C  
J
25°C  
1
T = 100°C  
J
0.1  
0.1  
T = 25°C  
J
0.01  
0.001  
0.01  
0
20 40  
60 80 100 120 140 160 180 200  
0.3 0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
V , REVERSE VOLTAGE (VOLTS)  
R
V , INSTANTANEOUS VOLTAGE (VOLTS)  
F
Figure 16. Typical Reverse Current  
Figure 17. Typical Forward Voltage  
http://onsemi.com  
6
 
NJL3281D (NPN) NJL1302D (PNP)  
PACKAGE DIMENSIONS  
TO−264, 5 LEAD  
CASE 340AA−01  
ISSUE O  
−T−  
Q
C
NOTES:  
−B−  
Y
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
M
M
T B  
0.25 (0.010)  
E
U
MILLIMETERS  
INCHES  
N
DIM MIN  
NOM MAX  
25.857 25.984 26.111  
19.761 19.888 20.015  
4.928 5.055 5.182  
1.219 BSC  
MIN  
NOM MAX  
1.018 1.023 1.028  
0.778 0.783 0.788  
0.194 0.199 0.204  
0.0480 BSC  
0.0800 0.0830 0.0860  
0.0780 BSC  
A
B
C
D
E
F
A
W
S
2.032 2.108 2.184  
1.981 BSC  
R
L
P
1
2
3 4  
5
0.150 BSC  
G
H
J
3.81 BSC  
0.1050 0.1070 0.1090  
0.0230 BSC  
0.804 0.809  
0.814  
2.667 2.718 2.769  
0.584 BSC  
K
L
20.422 20.549 20.676  
11.28 REF  
0.444 REF  
−−−  
7
0.180 REF  
K
M
N
P
Q
R
S
U
W
Y
0
−−−  
4.57 REF  
7
0
_
_
_
_
0.0889 0.0939 0.0989  
0.1370 BSC  
2.259 2.386 2.513  
3.480 BSC  
0.100 REF  
2.54 REF  
M
J
H
−−−  
0.243 REF  
−−−  
0.0940 BSC  
0
0
−−−  
6.17 REF  
−−−  
8
6
0
0
8
G
_
_
_
_
_
_
_
_
D 5 PL  
6
F 5 PL  
2.388 BSC  
M
S
0.25 (0.010)  
T B  
STYLE 1:  
PIN 1. BASE  
2. EMITTER  
W
3. COLLECTOR  
4. ANODE  
5. CATHODE  
S
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7
NJL3281D (NPN) NJL1302D (PNP)  
ThermalTrak is a trademark of Semiconductor Components Industries, LLC (SCILLC).  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
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USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
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Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
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Email: orderlit@onsemi.com  
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2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
NJL3281D/D  

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