NJVMJK45H11TWG [ONSEMI]
80 V, 8A, Low VCE(sat) PNP Transistor;
| 型号： | NJVMJK45H11TWG |
| 厂家： | 
ONSEMI |
| 描述： | 80 V, 8A, Low VCE(sat) PNP Transistor |
| 文件： | 总6页 (文件大小：1974K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Power Transistor 80 V, 8 A
Dual General Purpose PNP
PNP TRANSISTOR
80 V, 8 A
C5
MJK45H11
Designed for general purpose power and switching applications
such as regulators, converters and power amplifiers. Housed
in advanced LFPAK package (5 x 6 mm) with excellent thermal
conduction. Automotive end applications include air bag deployment,
power train control units, and instrument clusters.
B 4
E 123
Features
• Complementary NPN: MJK44H11
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
LFPAK4 5x6
CASE 760AB
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T = 25°C)
A
MARKING DIAGRAM
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V
−80
Vdc
CEO
EBO
Emitter−Base Voltage
V
−5
−8
Vdc
A
5H11G
ALLYW
Collector Current − Continuous
Collector Current − Peak
I
C
I
−16
A
CM
Junction and Storage Temperature Range
T , T
−65 to +150
_C
J
stg
5H11G
A
LL
Y
= Specific Device Code
= Assembly Location
= Wafer Lot
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= Year
W
= Work Week
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
per Device (Note 1)
R
6
_C/W
q
JC
ORDERING INFORMATION
†
Device
MJK45H11TWG
Package
Shipping
Thermal Resistance, Junction−to−Ambient
R
70
20
_C/W
q
JA
per Device (Note 1)
LFPAK4 5x6 3000 / Tape &
(Pb−Free)
Reel
Total Power Dissipation per Device
P
W
D
@ T = 25_C (Note 1)
A
NJVMJK45H11TWG LFPAK4 5x6 3000 / Tape &
(Pb−Free)
2
Reel
1. Surface−mounted on FR4 board using a 1in , 2 oz. Cu pad
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
September, 2022 − Rev. 0
MJK45H11/D
MJK45H11
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
V
Vdc
mA
CEO(sus)
(I = −30 mA, I = 0)
−80
−
−
−
−
−
C
B
Collector Cutoff Current
(V = Rated V , V = 0)
I
CES
−1.0
−1.0
CE
CEO BE
Emitter Cutoff Current
(V = −5 Vdc)
I
mA
EBO
−
EB
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage
V
V
Vdc
Vdc
−
CE(sat)
(I = 8 Adc, I = 0.4 Adc)
−
−
−
−
−1.0
−1.5
C
B
Base−Emitter Saturation Voltage
(I = 8 Adc, I = 0.8 Adc)
BE(sat)
C
B
DC Current Gain
(V = 1 Vdc, I = 2 Adc)
h
FE
60
40
−
−
−
−
CE
C
(V = 1 Vdc, I = 4 Adc)
CE
C
DYNAMIC CHARACTERISTICS
Collector Capacitance
C
−
−
130
90
−
−
pF
cb
(V = 10 Vdc, f
= 1 MHz)
CB
test
Gain Bandwidth Product
(I = 0.5 Adc, V = 10 Vdc, f = 20 MHz)
f
T
MHz
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
MJK45H11
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain
Figure 2. DC Current Gain
Figure 3. Saturation Voltage VCE(sat)
Figure 4. Saturation Voltage VBE(sat)
Figure 5. Collector Saturation Region
Figure 6. Capacitance
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3
MJK45H11
TYPICAL CHARACTERISTICS (continued)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 8. Power Derating
Figure 7. Current−Gain−Bandwidth Product
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
0.001
0.0000001 0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 9. Typical Transient Thermal Response, Junction−to−Case
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4
MJK45H11
PACKAGE DIMENSIONS
LFPAK4 5x6
CASE 760AB
ISSUE C
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5
MJK45H11
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