NJW44H11G [ONSEMI]
NPN 双极功率晶体管，80 V，10 A;
| 型号： | NJW44H11G |
| 厂家： | 
ONSEMI |
| 描述： | NPN 双极功率晶体管，80 V，10 A 晶体管 |
| 文件： | 总6页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NJW44H11G
80 V NPN, 10 A
Power Transistor
These series of plastic, silicon NPN power transistors can be used as
general purpose power amplification and switching such as output or
driver stages in applications such as switching regulators, converters
and power amplifiers.
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Features
80 VOLT, 10 AMPS
NPN POWER TRANSISTORS
• Fast Switching Speeds
• High Frequency
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
NPN
Compliant
COLLECTOR 2, 4
Benefits
• Reliable Performance at Higher Powers
• Symmetrical Characteristics in Complementary Configurations
• Accurate Reproduction of Input Signal
• Greater Dynamic Range
1
BASE
EMITTER 3
• High Amplifier Bandwidth
Applications
MARKING
DIAGRAM
• High−end Consumer Audio Products
4
♦ Home Amplifiers
♦ Home Receivers
NJWxxxG
AYWW
MAXIMUM RATINGS (T = 25°C)
A
Rating
Symbol
Max
80
Unit
Vdc
Vdc
A
Collector−Emitter Voltage
Emitter−Base Voltage
V
CEO
EBO
TO−3P
PLASTIC
CASE 340AB
V
5.0
10
Collector Current − Continuous
Collector Current − Peak (Note 1)
I
C
1
2
I
20
A
CM
3
1
2
3
Total Power Dissipation @ T = 25°C
P
D
120
Watts
C
xxx
G
A
Y
WW
= TBD
THERMAL CHARACTERISTICS
Characteristic
= Pb−Free Package
= Assembly Location
= Year
Symbol
Max
Unit
°C/W
°C
= Work Week
Thermal Resistance, Junction to Case
R
1.04
q
JC
Junction and Storage Temperature
Range
T , T
−ꢀ65 to
+150
J
stg
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Device
Package
Shipping
NJW44H11G
TO−3P
30 Units/Rail
(Pb−Free)
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
September, 2013 − Rev. 0
NJW44H11/D
NJW44H11G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I = 30 mAdc, I = 0)
V
80
−
−
−
−
−
Vdc
mAdc
mAdc
CEO
CES
EBO
C
B
Collector−Cutoff Current
(V = Rated V , V = 0)
I
10
10
CE
CEO BE
Emitter Cutoff Current
(V = 5.0 Vdc)
I
−
BE
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 2 A, V = 2 V)
100
80
−
−
400
320
C
CE
(I = 4 A, V = 2 V)
C
CE
Collector−Emitter Saturation Voltage
(I = 8 A, I = 400 mA)
V
−
−
1.0
V
V
CE(sat)
C
B
Base−Emitter Turn−on Voltage
(I = 8 A, V = 2.0 V)
V
BE(on)
−
−
1.5
C
CE
DYNAMIC CHARACTERISTICS
Output Capacitance
(V = 10 V, f = 1.0 MHz)
CB
C
−
−
65
85
−
−
pF
obo
Cutoff Frequency
f
MHz
T
(I = 500 mA, V = 5 V, f = 1.0 MHz)
C
CE
SWITCHING TIMES
Delay and Rise Times
t + t
−
−
−
300
500
140
−
−
−
ns
ns
ns
d
r
(I = 5.0 Adc, I = 0.5 A)
C
B1
Storage Time
t
s
(I = 5.0 Adc, I = I = 0.5 A)
C
B1
B2
Fall Time
t
f
(I = 5.0 Adc, I = I = 0.5 A)
C
B1
B2
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2
NJW44H11G
TYPICAL CHARACTERISTICS
500
450
400
350
300
250
200
150
100
500
450
150°C
25°C
150°C
25°C
400
350
300
250
200
150
100
−55°C
−55°C
V
CE
= 4 V
50
0
V
CE
= 2 V
50
0
0.01
0.1
1
10
0.01
0.1
1
10
10
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain
Figure 2. DC Current Gain
0.40
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.35
0.30
0.25
0.20
0.15
0.10
V
@ I /I = 10
V
@ I /I = 20
CE(sat)
C
B
CE(sat)
C B
150°C
150°C
25°C
25°C
−55°C
−55°C
0.05
0
0.05
0
0.01
0.1
1
10
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. Collector Emitter Saturation Voltage
Figure 4. Collector Emitter Saturation Voltage
1.2
1.0
0.8
0.6
0.4
1.2
1.0
0.8
0.6
0.4
−55°C
25°C
−55°C
25°C
150°C
150°C
0.2
0
V
@ I /I = 10
0.2
0
BE(sat)
C B
V
@ V = 4 V
CE
BE(on)
0.01
0.1
1
10
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 5. Base Emitter Saturation Voltage
Figure 6. Base Emitter “ON” Voltage
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3
NJW44H11G
TYPICAL CHARACTERISTICS
250
200
150
100
90
80
T = 25°C
f = 1 MHz
J
70
60
50
40
30
V
= 5 V
= 1 MHz
CE
f
test
20
T = 25°C
J
50
0
10
0
0
10
20
30
40
50
60
70
80
0.01
0.1
1
10
V
CB
, COLLECTOR−BASE VOLTAGE
I , COLLECTOR CURRENT (A)
C
Figure 7. Output Capacitance
Figure 8. Current Gain Bandwidth Product
140
120
100
80
100
10
1
1 mS
10 mS
1 Sec
60
40
0.1
20
0
0.01
0
20
40
60
80
100
120
140
160
1
10
100
T, TEMPERATURE (°C)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 9. Power Temperature Derating
Figure 10. Safe Operating Area (SOA)
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−3P−3LD
CASE 340AB−01
ISSUE A
DATE 30 OCT 2007
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.
SEATING
A
PLANE
B
B
C
U
Q
E
4
4. DIMENSION A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
SCALE 1:1
A
K
MILLIMETERS
L
DIM MIN
NOM
19.90
15.60
4.80
MAX
20.10
15.80
5.00
A
B
C
D
E
F
19.70
15.40
4.60
0.80
1.45
1.80
1.00
1.20
1.50
1.65
(3°)
2.00
2.20
P
G
H
J
5.45 BSC
1.40
1.20
0.55
1.60
0.75
0.60
K
L
19.80
18.50
3.30
20.00
18.70
3.50
20.20
18.90
3.70
1
2
3
F
H
J
P
Q
U
W
3X D
3.10
3.20
3.50
W
M
S
A B
0.25
5.00 REF
3.00
2.80
3.20
G
G
GENERIC MARKING
DIAGRAM*
STYLE 1:
PIN 1. BASE
STYLE 2:
STYLE 3:
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. ANODE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
3. SOURCE
4. DRAIN
4. CATHODE
xxxxxG
AYWW
xxxxx = Specific Device Code
G
A
Y
= Pb−Free Package
= Assembly Location
= Year
WW
= Work Week
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON25095D
TO−3P−3LD
PAGE 1 OF 1
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