NL17SZ125DTT1G [ONSEMI]

Non-Inverting 3-State Buffer; 非反相三态缓冲器
NL17SZ125DTT1G
型号: NL17SZ125DTT1G
厂家: ONSEMI    ONSEMI
描述:

Non-Inverting 3-State Buffer
非反相三态缓冲器

文件: 总10页 (文件大小:132K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NL17SZ125  
Non-Inverting 3-State Buffer  
The NL17SZ125 is a high performance noninverting buffer operating  
from a 1.65 V to 5.5 V supply.  
Features  
Extremely High Speed: t 2.6 ns (typical) at V = 5.0 V  
PD  
CC  
http://onsemi.com  
MARKING DIAGRAMS  
Designed for 1.65 V to 5.5 V V Operation  
CC  
Overvoltage Tolerant Inputs and Outputs  
LVTTL Compatible Interface Capability With 5.0 V TTL Logic  
with V = 3.0 V  
CC  
LVCMOS Compatible  
M0 M G  
SC88A (SOT353)  
DF SUFFIX  
G
24 mA Balanced Output Sink and Source Capability  
CASE 419A  
Near Zero Static Supply Current Substantially Reduces System  
Power Requirements  
3State OE Input is ActiveLow  
M0 MG  
Replacement for NC7SZ125  
SOT553  
XV5 SUFFIX  
CASE 463B  
G
Chip Complexity = 36 FETs  
These Devices are PbFree and are RoHS Compliant  
NLV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ100  
Qualified and PPAP Capable  
5
1
5
1
M0 MG  
G
TSOP5  
DT SUFFIX  
CASE 483  
1
2
3
5
V
CC  
OE  
IN A  
GND  
M
UDFN6  
1.0 x 1.0  
1
CASE 517BX  
4
OUT Y  
M0  
M
G
= Specific Device Code  
= Date Code  
= PbFree Package  
(*Note: Microdot may be in either location)  
Figure 1. Pinout (Top View)  
*Date Code orientation and/or position may  
vary depending upon manufacturing location.  
OE  
EN  
OUT Y  
IN A  
FUNCTION TABLE  
OE Input  
A Input  
Y Output  
Figure 2. Logic Symbol  
L
L
L
H
X
L
H
Z
H
PIN ASSIGNMENT  
X = Don’t Care  
1
2
3
4
5
OE  
IN A  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
GND  
OUT Y  
V
CC  
©
Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
May, 2012 Rev. 13  
NL17SZ125/D  
NL17SZ125  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
0.5 to +7.0  
0.5 to +7.0  
0.5 to +7.0  
50  
Units  
V
V
CC  
DC Supply Voltage  
V
IN  
DC Input Voltage  
V
V
OUT  
DC Output Voltage  
V
I
DC Input Diode Current  
DC Output Diode Current  
DC Output Sink Current  
DC Supply Current per Supply Pin  
Storage Temperature Range  
mA  
mA  
mA  
mA  
°C  
IK  
I
50  
OK  
I
50  
OUT  
I
100  
CC  
T
65 to +150  
260  
STG  
T
L
T
J
Lead Temperature, 1 mm from Case for 10 Seconds  
Junction Temperature Under Bias  
°C  
+150  
°C  
q
Thermal Resistance (Note 1)  
SC88A/SOT553  
TSOP5  
°C/W  
JA  
350  
230  
P
Power Dissipation in Still Air at 85°C  
150  
mW  
V
D
MSL  
Moisture Sensitivity  
Level 1  
F
Flammability Rating  
Oxygen Index: 28 to 34  
R
UL 94 V0 @ 0.125 in  
V
ESD  
ESD Withstand Voltage  
Human Body Model (Note 2)  
Machine Model (Note 3)  
Charged Device Model (Note 4)  
u2000  
u200  
N/A  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2 ounce copper trace with no air flow.  
2. Tested to EIA/JESD22A114A.  
3. Tested to EIA/JESD22A115A.  
4. Tested to JESD22C101A.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
1.65  
0
Max  
5.5  
Units  
V
V
CC  
DC Supply Voltage  
V
IN  
DC Input Voltage  
5.5  
V
V
OUT  
DC Output Voltage  
0
5.5  
V
T
Operating Temperature Range  
Input Rise and Fall Time  
55  
+125  
°C  
A
t , t  
r
ns/V  
f
V
CC  
V
CC  
V
CC  
V
CC  
= 1.8 V 0.15 V  
= 2.5 V 0.2 V  
= 3.0 V 0.3 V  
= 5.0 V 0.5 V  
0
0
0
0
20  
20  
10  
5.0  
http://onsemi.com  
2
 
NL17SZ125  
DEVICE JUNCTION TEMPERATURE VERSUS  
TIME TO 0.1% BOND FAILURES  
FAILURE RATE OF PLASTIC = CERAMIC  
UNTIL INTERMETALLICS OCCUR  
Junction  
Temperature °C  
Time, Hours  
1,032,200  
419,300  
178,700  
79,600  
Time, Years  
117.8  
47.9  
80  
90  
1
100  
110  
120  
130  
140  
20.4  
9.4  
1
10  
100  
1000  
37,000  
4.2  
TIME, YEARS  
17,800  
2.0  
Figure 3. Failure Rate vs. Time Junction Temperature  
8,900  
1.0  
DC ELECTRICAL CHARACTERISTICS  
T
A
= 255C  
Typ  
555C 3 T 3 1255C  
A
V
(V)  
CC  
Min  
Max  
Min  
Max  
Symbol  
Parameter  
Units  
Condition  
V
IH  
HighLevel Input  
Voltage  
1.65 to 1.95 0.75 V  
0.75 V  
V
CC  
CC  
CC  
CC  
2.3 to 5.5  
0.7 V  
0.7 V  
V
LowLevel Input  
1.65 to 1.95  
2.3 to 5.5  
0.25 V  
0.25 V  
V
V
IL  
CC  
CC  
CC  
CC  
Voltage  
0.3 V  
0.3 V  
V
OH  
HighLevel Output  
1.65  
1.8  
2.3  
3.0  
4.5  
1.55  
1.7  
2.2  
2.9  
4.4  
1.65  
1.8  
2.3  
3.0  
4.5  
1.55  
1.7  
2.2  
2.9  
4.4  
I
= 100 mA  
OH  
Voltage  
V
IN  
= V  
IH  
1.65  
2.3  
3.0  
3.0  
4.5  
1.29  
1.9  
2.4  
2.3  
3.8  
1.52  
2.15  
2.80  
2.68  
4.20  
1.29  
1.9  
2.4  
2.3  
3.8  
V
V
V
I
= 4 mA  
= 8 mA  
= 16 mA  
= 24 mA  
= 32 mA  
OH  
I
OH  
I
OH  
I
OH  
I
OH  
V
OL  
LowLevel Output  
1.65  
1.8  
2.3  
3.0  
4.5  
0.0  
0.0  
0.0  
0.0  
0.0  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
I
OL  
= 100 mA  
Voltage  
V
IN  
= V  
IL  
1.65  
2.3  
3.0  
3.0  
4.5  
0.08  
0.10  
0.15  
0.22  
0.22  
0.24  
0.30  
0.40  
0.55  
0.55  
0.24  
0.30  
0.40  
0.55  
0.55  
I
OL  
= 4 mA  
= 8 mA  
= 16 mA  
= 24 mA  
= 32 mA  
OL  
I
I
OL  
I
OL  
I
OL  
I
Input Leakage Current  
0 to 5.5  
0.1  
0.5  
1.0  
5.0  
mA  
mA  
V
= 5.5 V or GND  
IN  
IN  
I
3State Output  
Leakage  
1.65 to 5.5  
V
IN  
= V or V  
IH  
OZ  
IL  
0 V V  
5.5 V  
OUT  
I
Power Off Leakage  
Current  
0
1.0  
1.0  
10  
10  
mA  
mA  
V
V
= 5.5 V or  
OUT  
OFF  
IN  
= 5.5 V  
I
Quiescent Supply  
Current  
5.5  
V
IN  
= 5.5 V or GND  
CC  
http://onsemi.com  
3
NL17SZ125  
AC ELECTRICAL CHARACTERISTICS (t = t = 3.0 ns)  
R
F
T
= 255C  
555C 3 T 3 1255C  
A
A
V
(V)  
CC  
Min Typ Max  
Min  
2.0  
1.0  
Max  
10.5  
8.0  
Symbol  
Parameter  
Condition  
Units  
t
Propagation Delay  
AN to YN  
(Figures 4 and 5, Table 1)  
ns  
R = 1 MW  
C = 15 pF  
L
1.8 0.15  
2.0  
1.0  
9.0  
10  
PLH  
L
t
PHL  
R = 1 MW  
C = 15 pF 2.5 0.2  
7.5  
L
L
R = 1 MW  
L
C = 15 pF 3.3 0.3  
L
0.8  
1.2  
5.2  
5.7  
0.8  
1.2  
5.5  
6.0  
L
L
R = 500 W  
C = 50 pF  
R = 1 MW  
L
C = 15 pF 5.0 0.5  
L
0.5  
0.8  
4.5  
5.0  
0.5  
0.8  
4.8  
5.3  
L
L
R = 500 W  
C = 50 pF  
t
Output Enable Time  
R = 250 W  
C = 50 pF 1.8 0.15  
2.0  
1.8  
1.2  
0.8  
2.0  
1.5  
0.8  
0.3  
7.6  
8.0  
9.5  
8.5  
6.2  
5.5  
10  
2.0  
1.8  
1.2  
0.8  
2.0  
1.5  
0.8  
0.3  
10  
9.0  
6.5  
5.8  
10.5  
8.5  
6.0  
5.0  
ns  
ns  
PZH  
PZL  
L
L
t
(Figures 6, 7and 8, Table 1)  
2.5 0.2  
3.3 0.3  
5.0 0.5  
t
Output Disable Time  
(Figures 6, 7and 8, Table 1)  
R and R = 500 WC = 50 pF 1.8 0.15  
L 1 L  
PHZ  
t
PLZ  
2.5 0.2  
3.3 0.3  
5.0 0.5  
8.0  
5.7  
4.7  
CAPACITIVE CHARACTERISTICS  
Symbol  
Parameter  
Condition  
Typical  
2.5  
Units  
pF  
C
IN  
Input Capacitance  
Output Capacitance  
V
V
= 5.5 V, V = 0 V or V  
I
CC  
CC  
CC  
C
OUT  
= 5.5 V, V = 0 V or V  
2.5  
pF  
CC  
I
C
PD  
Power Dissipation Capacitance  
(Note 5)  
10 MHz, V = 3.3 V, V = 0 V or V  
9
11  
pF  
CC  
I
CC  
CC  
10 MHz, V = 5.5 V, V = 0 V or V  
CC  
I
5. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.  
PD  
Average operating current can be obtained by the equation: I  
) = C V f + I . C is used to determine the noload dynamic  
CC(OPR  
PD CC in CC PD  
2
power consumption; P = C V  
f + I V  
.
D
PD  
CC  
in  
CC  
CC  
http://onsemi.com  
4
 
NL17SZ125  
OE = GND  
V
CC  
INPUT  
OUTPUT  
50%  
A
Y
GND  
t
PHL  
t
PLH  
C *  
L
R
L
50% V  
CC  
Figure 4. Switching Waveform  
*Includes all probe and jig capacitance.  
A 1 MHz square input wave is recommended for  
propagation delay tests.  
Figure 5. tPLH or tPHL  
2   V  
CC  
INPUT  
INPUT  
R = 500 W  
1
V
CC  
OUTPUT  
R = 500 W  
OUTPUT  
C = 50 pF  
L
C = 50 pF  
L
R = 250 W  
L
L
A 1 MHz square input wave is recommended for  
propagation delay tests.  
A 1 MHz square input wave is recommended for  
propagation delay tests.  
Figure 6. tPZL or tPLZ  
Figure 7. tPZH or tPHZ  
2.7 V  
V
mi  
V
mi  
OE  
0 V  
t
t
PHZ  
PZH  
V
CC  
V
0.3 V  
OH  
V
V
On  
mo  
0 V  
t
t
PLZ  
PZL  
3.0 V  
+ 0.3 V  
On  
mo  
V
OL  
GND  
Figure 8. AC Output Enable and Disable Waveform  
Table 1. OUTPUT ENABLE AND DISABLE TIMES  
t
R
= t = 2.5 ns, 10% to 90%; f = 1 MHz; t = 500 ns  
F
W
V
CC  
3.3 V + 0.3 V  
1.5 V  
2.7 V  
1.5 V  
1.5 V  
2.5 V + 0.2 V  
Symbol  
V
mi  
V
2
CC/  
V
mo  
1.5 V  
V 2  
CC/  
http://onsemi.com  
5
NL17SZ125  
DEVICE ORDERING INFORMATION  
Device  
Package  
Shipping  
NL17SZ125DFT2G  
SC88A (SOT353)  
(PbFree)  
3000 / Tape & Reel  
3000 / Tape & Reel  
4000 / Tape & Reel  
3000 / Tape & Reel  
3000 / Tape & Reel  
NLV17SZ125DFT2G*  
NL17SZ125XV5T2G  
NL17SZ125DTT1G  
NL17SZ125CMUTCG  
SC88A (SOT353)  
(PbFree)  
SOT553  
(PbFree)  
TSOP5  
(PbFree)  
UDFN6, 1.0 x 1.0 x 0.35P  
(PbFree)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ100 Qualified and PPAP  
Capable.  
http://onsemi.com  
6
NL17SZ125  
PACKAGE DIMENSIONS  
SC88A (SC705/SOT353)  
CASE 419A02  
ISSUE K  
A
NOTES:  
1. DIMENSIONING AND TOLERANCING  
PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. 419A01 OBSOLETE. NEW STANDARD  
419A02.  
G
4. DIMENSIONS A AND B DO NOT INCLUDE  
MOLD FLASH, PROTRUSIONS, OR GATE  
BURRS.  
5
4
3
B−  
S
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
1.80  
1.15  
0.80  
0.10  
MAX  
2.20  
1.35  
1.10  
0.30  
1
2
A
B
C
D
G
H
J
0.071  
0.045  
0.031  
0.004  
0.087  
0.053  
0.043  
0.012  
0.026 BSC  
0.65 BSC  
M
M
B
D 5 PL  
0.2 (0.008)  
---  
0.004  
0.004  
0.004  
0.010  
0.012  
---  
0.10  
0.10  
0.10  
0.25  
0.30  
K
N
S
N
0.008 REF  
0.20 REF  
0.079  
0.087  
2.00  
2.20  
J
C
K
H
SOLDERING FOOTPRINT*  
0.50  
0.0197  
0.65  
0.025  
0.65  
0.025  
0.40  
0.0157  
1.9  
0.0748  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
7
NL17SZ125  
PACKAGE DIMENSIONS  
SOT553, 5 LEAD  
CASE 463B  
ISSUE B  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
D
X−  
ANSI Y14.5M, 1982.  
A
2. CONTROLLING DIMENSION: MILLIMETERS  
3. MAXIMUM LEAD THICKNESS INCLUDES  
LEAD FINISH THICKNESS. MINIMUM LEAD  
THICKNESS IS THE MINIMUM THICKNESS  
OF BASE MATERIAL.  
L
5
4
3
E
Y−  
MILLIMETERS  
INCHES  
H
E
DIM  
A
b
c
D
E
MIN  
0.50  
0.17  
0.08  
1.50  
1.10  
NOM  
0.55  
0.22  
0.13  
1.60  
1.20  
MAX  
MIN  
NOM  
0.022  
0.009  
0.005  
0.063  
MAX  
0.024  
0.011  
0.007  
0.067  
0.051  
1
2
0.60  
0.27  
0.18  
1.70  
1.30  
0.020  
0.007  
0.003  
0.059  
0.043  
b 5 PL  
c
e
0.047  
M
0.08 (0.003)  
X Y  
e
L
0.50 BSC  
0.20  
1.60  
0.020 BSC  
0.008  
0.10  
1.50  
0.30  
1.70  
0.004  
0.059  
0.012  
0.067  
H
0.063  
E
SOLDERING FOOTPRINT*  
0.3  
0.0118  
0.45  
0.0177  
1.0  
0.0394  
1.35  
0.0531  
0.5  
0.5  
0.0197 0.0197  
mm  
inches  
ǒ
Ǔ
SCALE 20:1  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
8
NL17SZ125  
PACKAGE DIMENSIONS  
TSOP5  
CASE 48302  
ISSUE H  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES  
LEAD FINISH THICKNESS. MINIMUM LEAD  
THICKNESS IS THE MINIMUM THICKNESS  
OF BASE MATERIAL.  
4. DIMENSIONS A AND B DO NOT INCLUDE  
MOLD FLASH, PROTRUSIONS, OR GATE  
BURRS.  
5. OPTIONAL CONSTRUCTION: AN  
ADDITIONAL TRIMMED LEAD IS ALLOWED  
IN THIS LOCATION. TRIMMED LEAD NOT TO  
EXTEND MORE THAN 0.2 FROM BODY.  
NOTE 5  
5X  
D
0.20 C A B  
2X  
2X  
0.10  
T
T
M
5
4
3
0.20  
B
S
1
2
K
L
DETAIL Z  
G
A
MILLIMETERS  
DIM  
A
B
C
D
MIN  
3.00 BSC  
1.50 BSC  
MAX  
DETAIL Z  
J
0.90  
1.10  
0.50  
C
0.25  
SEATING  
PLANE  
0.05  
G
H
J
K
L
M
S
0.95 BSC  
H
0.01  
0.10  
0.20  
1.25  
0
0.10  
0.26  
0.60  
1.55  
10  
3.00  
T
_
_
SOLDERING FOOTPRINT*  
2.50  
1.9  
0.074  
0.95  
0.037  
2.4  
0.094  
1.0  
0.039  
0.7  
0.028  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
9
NL17SZ125  
PACKAGE DIMENSIONS  
UDFN6, 1x1, 0.35P  
CASE 517BX  
ISSUE O  
L1  
NOTES:  
L
A B  
D
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b APPLIES TO PLATED  
TERMINAL AND IS MEASURED BETWEEN  
0.15 AND 0.20 MM FROM TERMINAL TIP.  
4. PACKAGE DIMENSIONS EXCLUSIVE OF  
BURRS AND MOLD FLASH.  
PIN ONE  
L3  
REFERENCE  
E
DETAIL A  
ALTERNATE TERMINAL  
CONSTRUCTION  
2X  
0.08  
C
MILLIMETERS  
DIM MIN  
MAX  
0.65  
0.05  
A
A1  
A3  
b
0.50  
0.00  
0.13 REF  
2X  
0.08  
C
TOP VIEW  
EXPOSED Cu  
MOLD CMPD  
0.17  
0.23  
DETAIL B  
0.05  
C
C
D
E
e
L
L1  
L3  
1.00 BSC  
1.00 BSC  
0.35  
A3  
DETAIL B  
A
0.20  
−−−  
0.26  
0.40  
0.15  
0.33  
ALTERNATE  
CONSTRUCTION  
0.05  
A1  
SEATING  
PLANE  
C
SIDE VIEW  
e
RECOMMENDED  
SOLDERING FOOTPRINT*  
DETAIL A  
6X  
0.52  
6X L  
6X  
0.25  
3
1
1.20  
PACKAGE  
OUTLINE  
1
6
4
6X b  
0.35  
M
0.07  
0.05  
C A  
B
PITCH  
M
C
NOTE 3  
BOTTOM VIEW  
DIMENSION: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
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Order Literature: http://www.onsemi.com/orderlit  
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NL17SZ125/D  

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