NL17SZ38MU3TCG [ONSEMI]
2-Input NAND Gate, Open Drain Output;
| 型号： | NL17SZ38MU3TCG |
| 厂家： | 
ONSEMI |
| 描述： | 2-Input NAND Gate, Open Drain Output 栅 |
| 文件： | 总10页 (文件大小：266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2-Input NAND Gate,
Open Drain Output
NL17SZ38
The NL17SZ38 is a single 2−Input NAND gate with open drain
output operating from a 1.65 V to 5.5 V supply.
Features
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• Designed for 1.65 V to 5.5 V V Operation
CC
MARKING
DIAGRAMS
• 2.4 ns t at V = 5 V (Typ)
PD
CC
• Inputs/Outputs Overvoltage Tolerant up to 5.5 V
6
• I
Supports Partial Power Down Protection
• Sink 32 mA at 4.5 V
OFF
SC−88
CASE 419B−02
XXXM G
G
• Available in SC−88, SC−74 and UDFN6 Packages
1
1
• Chip Complexity < 100 FETs
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
SC−74
CASE 318F−05
Compliant
XXX MG
6
G
1
IEEC / IEC
A
B
&
Y
UDFN6
1.45 x 1.0
CASE 517AQ
XM
1
Figure 1. Logic Symbol
UDFN6
1.0 x 1.0
CASE 517BX
X M
1
X, XXX = Specific Device Code
M
W
G
= Date Code*
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
December, 2019 − Rev. 0
NL17SZ38/D
NL17SZ38
1
2
3
6
5
4
A
B
V
A
B
1
2
3
5
4
CC
V
CC
NC
Y
GND
Y
GND
SC−88 / SC−74
UDFN6
Figure 2. Pinout (Top View)
PIN DEFINITIONS
Pin # SC70 /
FUNCTION TABLE (Y = /AB)
Inputs
Output
SC74A
Pin # MicroPak
Name
A
Description
Input
A
L
B
Y
*H
*H
*H
L
1
2
3
4
5
1
2
3
4
6
5
L
B
Input
L
H
L
GND
Y
Ground
H
H
Output
H
V
CC
Supply Voltage
No Connect
H = HIGH Logic Level
L = LOW Logic Level
*H = High Impedance Output State, Open Drain
NC
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2
NL17SZ38
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
V
V
CC
DC Supply Voltage
DC Input Voltage
DC Output Voltage
−0.5 to +6.5
−0.5 to +6.5
V
IN
V
V
OUT
Active−Mode (High or Low State)
Tri−State Mode (Note 1)
−0.5 to V + 0.5
V
CC
−0.5 to +6.5
−0.5 to +6.5
Power−Down Mode (V = 0 V)
CC
I
DC Input Diode Current
V
< GND
< GND
−50
−50
mA
mA
mA
mA
°C
IK
IN
I
DC Output Diode Current
V
OUT
OK
I
DC Output Source/Sink Current
DC Supply Current per Supply Pin or Ground Pin
Storage Temperature Range
50
OUT
I
or I
GND
STG
50
CC
T
−65 to +150
260
T
Lead Temperature, 1 mm from Case for 10 secs
Junction Temperature Under Bias
Thermal Resistance (Note 2)
°C
L
T
+150
°C
J
q
SC−88
SC−74
UDFN6
659
555
382
°C/W
JA
P
D
Power Dissipation in Still Air
SC−88
SC−74
UDFN6
190
225
327
mW
MSL
Moisture Sensitivity
Level 1
−
−
V
F
R
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage (Note 3)
Human Body Model
Charged Device Model
2000
1000
I
Latchup Performance (Note 4)
$100
mA
Latchup
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Applicable to devices with outputs that may be tri−stated.
2. Measured with minimum pad spacing on an FR4 board, using 10mm−by−1inch, 2 ounce copper trace no air flow.
3. HBM tested to ANSI/ESDA/JEDEC JS−001−2017. CDM tested to EIA/JESD22−C101−F. JEDEC recommends that ESD qualification to
EIA/JESD22−A115−A (Machine Model) be discontinued per JEDEC/JEP172A.
4. Tested to EIA/JESD78 Class II.
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
1.65
0
Max
5.5
Unit
V
V
CC
Positive DC Supply Voltage
DC Input Voltage
V
IN
5.5
V
V
OUT
DC Output Voltage
Active−Mode (High or Low State)
Tri−State Mode (Note 1)
0
0
0
V
CC
5.5
5.5
Power−Down Mode (V = 0 V)
CC
T
Operating Temperature Range
Input Rise and Fall Time
−55
+125
°C
A
t , t
r
V = 1.65 V to 1.95 V
CC
0
0
0
0
20
20
10
5
ns
f
V
CC
V
CC
V
CC
= 2.3 V to 2.7 V
= 3.0 V to 3.6 V
= 4.5 V to 5.5 V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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3
NL17SZ38
DC ELECTRICAL CHARACTERISTICS
T
A
= 255C
Typ
−555C 3 T 3 1255C
A
V
(V)
CC
Min
Max
Min
Max
Symbol
Parameter
Condition
Units
1.65 to 1.95 0.65 V
−
−
−
−
−
−
0.65 V
−
−
V
High−Level Input
V
CC
CC
CC
IH
Voltage
2.3 to 5.5
1.65 to 1.95
2.3 to 5.5
0.70 V
0.70 V
CC
−
−
0.35 V
−
−
0.35 V
V
Low−Level Input
Voltage
V
V
CC
CC
IL
0.30 V
0.30 V
CC
CC
V
OL
Low−Level Output
Voltage
V
= V or V
IN
OH
OH
OH
OH
OH
OH
IH
IL
I
I
I
I
I
I
= 100 mA
= 4 mA
1.65 to 5.5
−
−
−
−
−
−
−
0.1
0.24
0.3
0.4
0.55
0.55
−
−
−
−
−
−
0.1
0.24
0.3
0.4
0.55
0.55
1.65
2.3
3
3
4.5
0.08
0.12
0.24
0.26
0.31
= 8 mA
= 16 mA
= 24 mA
= 32 mA
I
Input Leakage Current
V
= 5.5 V or GND
= 5.5 V or
1.65 to 5.5
0
−
−
−
−
0.1
1.0
−
−
1.0
10
mA
mA
IN
IN
I
Power Off Leakage
Current
V
V
OFF
IN
OUT
= 5.5 V
I
Quiescent Supply
Current
V
= V or GND
5.5
−
−
−
−
1.0
0.5
−
−
10
mA
mA
CC
IN
CC
I
3−State Output
Leakage Current
V
OUT
= 0 V to 5.5 V
1.65 to 5.5
5.0
OZ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS
T
A
= +25°C
Typ
T = −40 to +85°C
A
Symbol
Parameter
Conditions
V
(V)
Min
−
Max
12.7
10.5
7.0
Min
Max
13.2
11.0
7.5
Unit
CC
t
Propagation Delay
(Figure 3, 4)
C = 50 pF,
1.65
1.80
6.5
−
−
−
−
−
−
−
−
−
−
ns
PZL
L
RU = 500 W,
RD = 500 W,
−
5.4
3.5
2.8
2.2
5.5
4.6
3.0
2.1
1.3
V
IN
= 2 · V
CC
2.50 0.20
3.30 0.30
5.00 0.50
1.65
−
−
5.0
5.2
−
4.3
4.5
t
C = 50 pF,
L
−
12.7
10.5
7.0
13.2
11.0
7.5
ns
PLZ
RU = 500 W,
RD = 500 W,
1.80
−
V
= 2 · V
IN
CC
2.50 0.20
3.30 0.30
5.00 0.50
−
−
6.0
5.2
−
4.3
4.5
CAPACITIVE CHARACTERISTICS (t = t = 3.0 ns)
R
F
Symbol
Parameter
Input Capacitance
Output Capacitance
Condition
Typical
2.5
Units
pF
C
V
V
= 5.5 V, V = 0 V or V
IN
IN
CC
CC
CC
C
= 5.5 V, V = 0 V or V
4.0
pF
OUT
CC
IN
C
Power Dissipation Capacitance
(Note 5)
10 MHz, V = 5.5 V, V = 0 V or V
CC
4.0
pF
PD
CC
IN
5. C is defined as the value of the internal equivalent capacitance which is derived from dynamic operating current consumption (I
) at
PD
CCD
no output loading and operating at 50% duty cycle. C is related to I
dynamic operating current by the expression:
PD
CCD
I
= (C ) (V ) (f ) + (I static).
CCD
PD CC IN CC
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4
NL17SZ38
OPEN
Test
Switch
C , pF
L
R , W R , W
L 1
2 x V
DUT
GND
Position
CC
t
/ t
Open
See AC Characteristics Table
PLH PHL
R
1
L
t
/ t
2 x V
−
−
−
PLZ PZL
CC
See AC Characteristics Table
OUTPUT
t
/ t
GND
−
−
−
PHZ PZH
R
R
T
C *
L
See AC Characteristics Table
X = Don’t Care
C includes probe and jig capacitance
L
R is Z
of pulse generator (typically 50 W)
T
OUT
f = 1 MHz
Figure 3. Test Circuit
V
CC
t = 3 ns
r
t = 3 ns
f
V
CC
90%
90%
INPUT
V
mi
V
mi
V
mi
V
mi
INPUT
GND
~V
10%
10%
GND
t
t
PLZ
PZL
t
t
PLH
PHL
CC
V
OH
V
OUTPUT
OUTPUT
mo
V
V
V
V
OUTPUT
OUTPUT
mo
mo
V
OL
+ V
OL
Y
V
V
V
OL
t
t
PHZ
PZH
t
t
PLH
PHL
V
OH
Y
OH
V
OH
− V
V
mo
mo
mo
V
OL
~0 V
Figure 4. Switching Waveforms
V , V
mo
t
, t
t
, t , t , t
PZL PLZ PZH PHZ
V
CC
, V
V
mi
, V
V , V
Y
PLH PHL
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
4.5 to 5.5
V
CC
V
CC
V
CC
V
CC
/ 2
/ 2
/ 2
/ 2
(V − V ) / 2
V
CC
V
CC
V
CC
V
CC
/ 2
/ 2
/ 2
/ 2
0.15
0.15
0.3
OH
OL
(V − V ) / 2
OH
OL
(V − V ) / 2
OH
OL
(V − V ) / 2
0.3
OH
OL
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5
NL17SZ38
DEVICE ORDERING INFORMATION
Pin 1 Orientation
(See below)
†
Device
Packages
Specific Device Code
Shipping
NL17SZ38DFT2G
(In Development)
SC−88
TBD
Q4
3000 / Tape & Reel
NL17SZ38DBVT1G
SC−74
AT
Q4
Q4
3000 / Tape & Reel
3000 / Tape & Reel
NL17SZ38MU1TCG
(In Development)
UDFN6, 1.45 x 1.0 x 0.35P
TBD
NL17SZ38MU3TCG
(In Development)
UDFN6, 1.0 x 1.0 x 0.35P
TBD
Q4
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Pin 1 Orientation in Tape and Reel
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6
NL17SZ38
PACKAGE DIMENSIONS
SC*88/SC70*6/SOT*363
CASE 419B*02
ISSUE Y
2X
aaa H D
NOTES:
D
H
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU−
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI−
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
D
GAGE
PLANE
6ꢀꢀꢀ5ꢀꢀꢁ4
1ꢀꢀꢀ2ꢀꢀꢁ3
L
L2
E1
E
DETAIL A
aaa C
2X
2X 3 TIPS
bbb H
D
e
MILLIMETERS
INCHES
NOM MAX
***1.10
MIN
***
NOM MAX
**0*.043
6X b
B
A1 0.00
A2 0.70
*** 0.10 0.000
***0.004
M
ddd
C A-B D
TOP VIEW
0.90
0.20
0.15
2.00
2.10
1.25
0.65 BSC
0.36
1.00 0.027 0.035 0.039
0.25 0.006 0.008 0.010
0.22 0.003 0.006 0.009
2.20 0.070 0.078 0.086
2.20 0.078 0.082 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b
C
D
E
0.15
0.08
1.80
2.00
A2
DETAIL A
A
E1 1.15
e
L
0.26
0.46 0.010 0.014 0.018
L2
0.15 BSC
0.15
0.30
0.10
0.10
0.006 BSC
0.006
0.012
0.004
0.004
aaa
bbb
ccc
ddd
6X
ccc C
A1
SEATING
PLANE
c
C
SIDE VIEW
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.30
6X
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb *Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
NL17SZ38
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE N
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
6
5
2
4
4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05.
E
H
E
1
3
MILLIMETERS
INCHES
NOM
0.039
0.002
0.015
0.007
0.118
0.059
0.037
0.016
0.108
−
DIM
A
A1
b
c
D
MIN
0.90
0.01
0.25
0.10
2.90
1.30
NOM
1.00
0.06
0.37
0.18
3.00
1.50
0.95
0.40
2.75
−
MAX
MIN
MAX
0.043
0.004
0.020
0.010
0.122
0.067
1.10
0.10
0.50
0.26
3.10
1.70
1.05
0.60
3.00
0.035
0.001
0.010
0.004
0.114
0.051
b
e
E
e
q
0°
10°
0°
10°
0.85
0.034
0.041
c
L
0.20
2.50
0.008
0.099
0.024
0.118
A
0.05 (0.002)
H
E
q
L
A1
SOLDERING FOOTPRINT*
2.4
0.094
0.95
0.037
1.9
0.074
0.95
0.037
0.7
0.028
1.0
mm
inches
ǒ
Ǔ
SCALE 10:1
0.039
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 1:
PIN 1. CATHODE
2. ANODE
STYLE 2:
STYLE 3:
PIN 1. EMITTER 1
2. BASE 1
STYLE 4:
PIN 1. COLLECTOR 2
STYLE 5:
PIN 1. CHANNEL 1
2. ANODE
STYLE 6:
PIN 1. CATHODE
2. ANODE
PIN 1. NO CONNECTION
2. COLLECTOR
3. EMITTER
2. EMITTER 1/EMITTER 2
3. COLLECTOR 1
4. EMITTER 3
5. BASE 1/BASE 2/COLLECTOR 3
6. BASE 3
3. CATHODE
4. CATHODE
5. ANODE
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
3. CHANNEL 2
4. CHANNEL 3
5. CATHODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
4. NO CONNECTION
5. COLLECTOR
6. BASE
6. CATHODE
6. COLLECTOR 1
6. CHANNEL 4
STYLE 10:
STYLE 11:
PIN 1. EMITTER
2. BASE
STYLE 7:
PIN 1. SOURCE 1
2. GATE 1
STYLE 8:
PIN 1. EMITTER 1
2. BASE 2
STYLE 9:
PIN 1. EMITTER 2
2. BASE 2
PIN 1. ANODE/CATHODE
2. BASE
3. EMITTER
3. ANODE/CATHODE
4. ANODE
5. CATHODE
6. COLLECTOR
3. DRAIN 2
4. SOURCE 2
5. GATE 2
3. COLLECTOR 2
4. EMITTER 2
5. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
4. COLLECTOR
5. ANODE
6. CATHODE
6. DRAIN 1
6. COLLECTOR 1
6. COLLECTOR 2
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8
NL17SZ38
PACKAGE DIMENSIONS
UDFN6, 1.45x1.0, 0.5P
CASE 517AQ
ISSUE O
A
B
D
L
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM THE TERMINAL TIP.
L1
DETAIL A
PIN ONE
OPTIONAL
E
MILLIMETERS
REFERENCE
CONSTRUCTIONS
DIM MIN
0.45
A1 0.00
MAX
0.55
0.05
A
0.10
C
EXPOSED Cu
MOLD CMPD
A2
b
0.07 REF
0.20
1.45 BSC
TOP VIEW
0.30
0.10
C
D
E
e
1.00 BSC
0.50 BSC
DETAIL B
L
L1
0.30
−−−
0.40
0.15
DETAIL B
OPTIONAL
0.05
0.05
C
C
CONSTRUCTIONS
A
MOUNTING FOOTPRINT
6X
A1
6X
SEATING
PLANE
A2
C
0.30
SIDE VIEW
e
PACKAGE
OUTLINE
6X L
1.24
3
1
DETAIL A
6X
0.53
1
0.50
PITCH
DIMENSIONS: MILLIMETERS
6
4
6X b
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.10
C A B
NOTE 3
0.05
C
BOTTOM VIEW
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9
NL17SZ38
PACKAGE DIMENSIONS
UDFN6, 1x1, 0.35P
CASE 517BX
ISSUE O
L1
NOTES:
L
A B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.20 MM FROM TERMINAL TIP.
4. PACKAGE DIMENSIONS EXCLUSIVE OF
BURRS AND MOLD FLASH.
PIN ONE
L3
REFERENCE
E
DETAIL A
ALTERNATE TERMINAL
CONSTRUCTION
2X
0.08
C
MILLIMETERS
DIM MIN
MAX
0.65
0.05
A
A1
A3
b
0.50
0.00
0.13 REF
2X
0.08
C
TOP VIEW
EXPOSED Cu
MOLD CMPD
0.17
0.23
DETAIL B
0.05
C
C
D
E
e
L
L1
L3
1.00 BSC
1.00 BSC
0.35
A3
DETAIL B
A
0.20
−−−
0.26
0.40
0.15
0.33
ALTERNATE
CONSTRUCTION
0.05
A1
SEATING
PLANE
C
SIDE VIEW
e
RECOMMENDED
SOLDERING FOOTPRINT*
DETAIL A
6X
0.52
6X L
6X
0.25
3
1
1.20
PACKAGE
OUTLINE
1
6
4
6X b
0.35
M
0.07
0.05
C A
B
PITCH
M
C
NOTE 3
BOTTOM VIEW
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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