NL27WZ04DFT4 [ONSEMI]
DUAL 1-INPUT INVERT GATE, PDSO6, SC-70, SC-88, SOT-363, 6 PIN;
| 型号： | NL27WZ04DFT4 |
| 厂家： | 
ONSEMI |
| 描述： | DUAL 1-INPUT INVERT GATE, PDSO6, SC-70, SC-88, SOT-363, 6 PIN 栅 输入元件 光电二极管 逻辑集成电路 触发器 |
| 文件： | 总6页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NL27WZ04
Dual Inverter
The NL27WZ04 is a high performance dual inverter operating from
a 1.65 V to 5.5 V supply. High impedance TTL compatible inputs
significantly reduce current loading to input drivers while TTL
compatible outputs offer improved switching noise performance.
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Features
• Extremely High Speed: t 2.0 ns (typical) at V = 5 V
PD
CC
MARKING
DIAGRAMS
• Designed for 1.65 V to 5.5 V V Operation
CC
• Over Voltage Tolerant Inputs and Outputs
• LVTTL Compatible − Interface Capability with 5 V TTL Logic
6
SC−88
(SC70−6/SOT−363)
DF SUFFIX
with V = 3 V
CC
M5 M G
• LVCMOS Compatible
G
1
CASE 419B
• 24 mA Balanced Output Sink and Source Capability
1
• Near Zero Static Supply Current Substantially Reduces System
Power Requirements
• Replacement for NC7W04
TSOP−6
DT SUFFIX
CASE 318G
M5 M G
• Chip Complexity: FET = 72; Equivalent Gate = 18
G
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
1
1
M5 = Device Code
M
G
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position and underbar
may vary depending upon manufacturing location.
IN A1
GND
IN A2
1
2
3
6
5
4
OUT Y1
PIN ASSIGNMENT
V
CC
Pin
Function
1
2
3
4
5
6
IN A1
GND
OUT Y2
IN A2
Figure 1. Pinout (Top View)
OUT Y2
V
CC
OUT Y1
FUNCTION TABLE
1
IN A1
IN A2
OUT Y1
OUT Y2
A Input
Y Output
1
L
H
L
H
Figure 2. Logic Symbol
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
March, 2013 − Rev. 10
NL27WZ04/D
NL27WZ04
MAXIMUM RATINGS
Symbol
Characteristics
Value
Units
V
DC Supply Voltage
DC Input Voltage
DC Output Voltage
−0.5 to +7.0
V
V
V
CC
V
−0.5 ≤ V ≤ +7.0
I
I
V
O
Output in HIGH or LOW State (Note 1)
−0.5 ≤ V ≤ 7.0
O
I
DC Input Diode Current
V < GND
−50
−50
mA
mA
mA
mA
mA
°C
IK
I
I
DC Output Diode Current
V < GND
O
OK
I
DC Output Source/Sink Current
DC Supply Current Per Supply Pin
DC Ground Current Per Ground Pin
Storage Temperature Range
50
O
I
100
CC
I
100
GND
T
−65 to +150
STG
P
Power Dissipation in Still Air
mW
D
SC−88, TSOP−6 (Note 2)
200
333
q
Thermal Resistance
SC−88, TSOP−6 (Note 2)
°C/W
JA
T
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
260
°C
°C
V
L
T
+150
J
V
ESD Withstand Voltage
ESD
Human Body Model (Note 3)
Machine Model (Note 4)
Charged Device Model (Note 5)
> 2000
> 200
N/A
I
Latchup Performance Above V and Below GND at 125°C (Note 6)
100
mA
LATCHUP
CC
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. I absolute maximum rating must be observed.
O
2. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
3. Tested to EIA/JESD22−A114−A
4. Tested to EIA/JESD22−A115−A
5. Tested to JESD22−C101−A
6. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Units
Supply Voltage
Operating
Data Retention Only
V
CC
V
1.65
1.5
5.5
5.5
Input Voltage
V
0
0
5.5
5.5
V
V
I
Output Voltage (HIGH or LOW State)
Operating Free−Air Temperature
Input Transition Rise or Fall Rate
V
O
T
A
−55
+125
°C
Dt/DV
ns/V
V
CC
V
CC
V
CC
= 2.5 V 0.2 V
= 3.0 V 0.3 V
= 5.0 V 0.5 V
0
0
0
20
10
5
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2
NL27WZ04
DC ELECTRICAL CHARACTERISTICS
V
CC
T
A
= 25°C
−55°C 3 T 3 125°C
A
Parameter
Condition
Symbol
(V)
1.65−1.95
2.3 to 5.5
1.65−1.95
2.3 to 5.5
1.65 to 5.5
1.65
Min
Typ
Max
Min
Max
Units
0.75 V
0.75 V
High−Level Input
Voltage
V
IH
V
CC
CC
0.7 V
0.7 V
CC
CC
0.25 V
0.25 V
Low−Level Input
Voltage
V
IL
V
V
CC
CC
0.3 V
0.3 V
CC
CC
High−Level Output
Voltage
I
= −100 mA
V
OH
V
− 0.1
V
CC
V
− 0.1
OH
CC
CC
I
= −3 mA
= −8 mA
1.29
1.52
2.1
2.4
2.7
2.5
4.0
1.29
OH
V
= V
IL
IN
I
2.3
1.9
2.2
2.4
2.3
3.8
1.9
2.2
2.4
2.3
3.8
OH
I
= −12 mA
= −16 mA
= −24 mA
= −32 mA
= 100 mA
2.7
OH
I
3.0
OH
I
3.0
OH
I
4.5
OH
Low−Level Output
Voltage
I
V
OL
1.65 to 5.5
1.65
0.1
0.24
0.3
0.4
0.4
0.55
0.55
0.1
1
0.1
0.24
0.3
V
OL
I
= 3 mA
= 8 mA
0.08
0.20
0.22
0.28
0.38
0.42
OL
V
IN
= V
IH
I
2.3
OL
I
= 12 mA
= 16 mA
= 24 mA
= 32 mA
2.7
0.4
OL
I
3.0
0.4
OL
I
3.0
0.55
0.55
1.0
OL
I
4.5
OL
Input Leakage Current
V
V
= 5.5 V or GND
I
IN
0 to 5.5
0
mA
mA
IN
Power Off
Leakage Current
V
= 5.5 V or
OUT
I
10
IN
OFF
V
= 5.5 V
Quiescent Supply
Current
= 5.5 V or GND
I
5.5
1
10
mA
IN
CC
AC ELECTRICAL CHARACTERISTICS t = t = 2.5 ns; C = 50 pF; R = 500 W
R
F
L
L
T
A
= 25°C
−55°C 3 T 3 125°C
A
V
CC
Symbol
Min
1.8
1.8
Typ Max
Min
1.8
1.8
Max
11.0
8.4
(V)
1.65
1.8
Parameter
Condition
Units
Propagation Delay
(Figure 3 and 4)
t
2.3
4.4
3.0
2.2
2.9
1..8
2.3
9.2
7.6
5.1
3.4
4.5
2.8
3.6
ns
R = 1 MW, C = 15 pF
PLH
L
L
t
PHL
R = 1 MW, C = 15 pF
L
L
R = 1 MW, C = 15 pF
2.5 0.2
3.3 0.3
1.2
0.8
1.2
0.5
0.8
1.2
0.8
1.2
0.5
0.8
5.6
3.8
5.0
3.1
4.0
L
L
R = 1 MW, C = 15 pF
L
L
R = 500 W, C = 50 pF
L
L
R = 1 MW, C = 15 pF
5.0 0.5
L
L
R = 500 W, C = 50 pF
L
L
CAPACITIVE CHARACTERISTICS
Parameter
Symbol
Condition
= 5.5 V, V = 0 V or V
CC
Typical
Units
pF
Input Capacitance
C
V
CC
2.5
IN
I
Power Dissipation
Capacitance (Note 7)
C
10 MHz, V = 3.3 V, V = 0 V or V
9
11
pF
PD
CC
I
CC
CC
10 MHz, V = 5.5 V, V = 0 V or V
CC
I
7. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
PD
Average operating current can be obtained by the equation: I
) = C ꢀ V ꢀ f + I . C is used to determine the no−load dynamic
CC(OPR
PD CC in CC PD
2
power consumption; P = C ꢀ V
ꢀ f + I ꢀ V
.
D
PD
CC
in
CC
CC
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3
NL27WZ04
V
CC
A
Y
50%
GND
t
t
PHL
PLH
50% V
CC
PROPAGATION DELAYS
t
R
= t = 2.5 ns, 10% to 90%; f = 1 MHz; t = 500 ns
F
W
Figure 3. Switching Waveforms
V
CC
PULSE
GENERATOR
DUT
R
T
C
R
L
L
R = Z
of pulse generator (typically 50 W)
T
OUT
Figure 4. Test Circuit
ORDERING INFORMATION
Device
†
Package
Shipping
NL27WZ04DFT1G
SC−88/SC70−6/SOT−363
(Pb−Free)
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
NL27WZ04DFT2G
NLV27WZ04DFT1G*
NLV27WZ04DFT2G*
NL27WZ04DTT1G
SC−88/SC70−6/SOT−363
(Pb−Free)
SC−88/SC70−6/SOT−363
(Pb−Free)
SC−88/SC70−6/SOT−363
(Pb−Free)
TSOP−6
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
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4
NL27WZ04
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
2X
aaa H
D
NOTES:
D
H
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
D
GAGE
PLANE
6
1
5
4
3
L
L2
E1
E
DETAIL A
2
aaa
C
2X
2X 3 TIPS
bbb H
D
e
MILLIMETERS
DIM MIN NOM MAX
−−−
INCHES
MIN
−−−
NOM MAX
−−− 0.043
−−− 0.004
6X b
B
A
−−−
−−−
1.10
A1 0.00
A2 0.70
0.10 0.000
M
ddd
C A-B D
TOP VIEW
0.90
0.20
0.15
2.00
2.10
1.25
0.65 BSC
0.36
1.00 0.027 0.035 0.039
0.25 0.006 0.008 0.010
0.22 0.003 0.006 0.009
2.20 0.070 0.078 0.086
2.20 0.078 0.082 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b
C
D
E
0.15
0.08
1.80
2.00
A2
DETAIL A
A
E1 1.15
e
L
0.26
0.46 0.010 0.014 0.018
0.006 BSC
L2
0.15 BSC
0.15
aaa
bbb
ccc
ddd
0.006
0.012
0.004
0.004
0.30
0.10
0.10
6X
ccc C
A1
SEATING
PLANE
c
C
SIDE VIEW
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.30
6X
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
NL27WZ04
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE V
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
H
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
6
1
5
2
4
L2
GAUGE
PLANE
E1
E
5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
3
L
MILLIMETERS
SEATING
M
C
NOTE 5
DIM
A
A1
b
c
D
E
E1
e
MIN
0.90
0.01
0.25
0.10
2.90
2.50
1.30
0.85
0.20
NOM
1.00
MAX
1.10
0.10
0.50
0.26
3.10
3.00
1.70
1.05
0.60
PLANE
b
DETAIL Z
e
0.06
0.38
0.18
3.00
c
2.75
A
0.05
1.50
0.95
L
0.40
A1
L2
M
0.25 BSC
−
DETAIL Z
0°
10°
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.60
6X
0.95
3.20
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
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NL27WZ04/D
相关型号：
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