NLAS1053 [ONSEMI]

2:1 Mux/Demux Analog Switches; 2 : 1复用器/解复用器模拟开关
NLAS1053
型号: NLAS1053
厂家: ONSEMI    ONSEMI
描述:

2:1 Mux/Demux Analog Switches
2 : 1复用器/解复用器模拟开关

解复用器 开关
文件: 总12页 (文件大小:127K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NLAS1053  
2:1 Mux/Demux Analog  
Switches  
The NLAS1053 is an advanced CMOS analog switch fabricated  
with silicon gate CMOS technology. It achieves very high speed  
propagation delays and low ON resistances while maintaining CMOS  
low power dissipation. The device consists of a single 2:1  
Mux/Demux (SPDT), similar to ON Semiconductor’s NLAS4053  
analog and digital voltages that may vary across the full power supply  
http://onsemi.com  
MARKING  
DIAGRAMS  
range (from V  
to GND).  
CC  
The inhibit and select input pins have over voltage protection that  
allows voltages above V up to 7.0 V to be present without damage  
CC  
8
or disruption of operation of the part, regardless of the operating  
voltage.  
US8  
US SUFFIX  
CASE 493–01  
D
AC  
High Speed: t  
= 1 ns (Typ) at V  
= 5.0 V  
PD  
Low Power Dissipation: I  
CC  
= 2 µA (Max) at T = 25°C  
CC  
A
High Bandwidth, Improved Linearity, and Low RDS  
ON  
INH Pin Allows a Both Channels ‘OFF’ Condition (With a High)  
RDS 25 , Performance Very Similar to the NLAS4053  
1
ON  
AC  
D
= Device Code  
= Date Code  
Break Before Make Circuitry, Prevents Inadvertent Shorts  
Useful For Switching Video Frequencies Beyond 50 MHz  
Latch–Up Performance Exceeds 300 mA  
ESD Performance: HBM > 2000 V; MM > 200 V, CDM > 1500 V  
Tiny US8 Package, Only 2.1 X 3.0 mm  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 9 of this data sheet.  
COM  
1
2
3
4
8
7
6
5
V
CC  
FUNCTION TABLE  
INH  
Select  
Ch 0  
Ch 1  
INH  
N/C  
CH0  
H
L
L
X
L
OFF  
ON  
OFF  
OFF  
ON  
CH1  
H
OFF  
GND  
Select  
Figure 1. Pin Assignment  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
February, 2002 – Rev. 0  
NLAS1053/D  
NLAS1053  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
V
V
Positive DC Supply Voltage  
Digital Input Voltage (Select and Inhibit)  
Analog Output Voltage (V or V  
0.5 to +7.0  
CC  
0.5 V is +7.0  
V
IN  
)
0.5 V is V +0.5  
CC  
V
IS  
CH COM  
I
DC Current, Into or Out of Any Pin  
Storage Temperature Range  
50  
mA  
_C  
IK  
T
T
T
q
65 to +150  
260  
STG  
Lead Temperature, 1 mm from Case for 10 Seconds  
Junction Temperature under Bias  
Thermal Resistance  
_C  
L
J
+150  
_C  
_C/W  
mW  
250  
JA  
P
Power Dissipation in Still Air at 85_C  
Moisture Sensitivity  
250  
D
MSL  
Level 1  
F
R
Flammability Rating  
Oxygen Index: 30% – 35%  
UL–94–VO (0.125 in)  
V
ESD  
ESD Withstand Voltage  
Human Body Model (Note 2)  
Machine Model (Note 3)  
> 2000  
200  
V
Charged Device Model (Note 4)  
N/A  
I
Latch–Up Performance  
Above V  
and Below GND at 85_C (Note 5)  
±300  
mA  
Latch–Up  
CC  
Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those  
indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional  
operation should be restricted to the Recommended Operating Conditions.  
1. Measured with minimum pad spacing on an FR4 board, using 10 mm–by–1 inch, 2–ounce copper trace with no air flow.  
2. Tested to EIA/JESD22–A114–A.  
3. Tested to EIA/JESD22–A115–A.  
4. Tested to JESD22–C101–A.  
5. Tested to EIA/JESD78.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Characteristics  
Min  
2.0  
Max  
5.5  
Unit  
V
V
V
V
V
Positive DC Supply Voltage  
CC  
Digital Input Voltage (Select and Inhibit)  
Static or Dynamic Voltage Across an Off Switch  
Analog Input Voltage (CH, COM)  
GND  
GND  
GND  
55  
5.5  
V
IN  
V
V
V
IO  
IS  
CC  
V
CC  
T
A
Operating Temperature Range, All Package Types  
+125  
°C  
ns/V  
t , t  
r f  
Input Rise or Fall Time,  
(Enable Input)  
V
cc  
V
cc  
= 3.3 V ± 0.3 V  
= 5.0 V ± 0.5 V  
0
0
100  
20  
DEVICE JUNCTION TEMPERATURE VERSUS TIME  
TO 0.1% BOND FAILURES  
FAILURE RATE OF PLASTIC = CERAMIC  
UNTIL INTERMETALLICS OCCUR  
Junction  
Temperature 5C  
Time, Hours  
1,032,200  
419,300  
178,700  
79,600  
Time, Years  
117.8  
47.9  
80  
90  
100  
110  
120  
130  
140  
20.4  
1
9.4  
1000  
1
10  
100  
37,000  
4.2  
TIME, YEARS  
17,800  
2.0  
Figure 2. Failure Rate versus  
Time Junction Temperature  
8,900  
1.0  
http://onsemi.com  
2
NLAS1053  
DC CHARACTERISTICS – Digital Section (Voltages Referenced to GND)  
Guaranteed Limit  
Symbol  
Parameter  
Condition  
V
CC  
*55_C to  
t85_C  
t125_C  
Unit  
25_C  
V
V
Minimum High–Level Input  
Voltage, Select and Inhibit  
Inputs  
2.0  
2.5  
3.0  
4.5  
5.5  
1.5  
1.5  
1.9  
1.5  
1.9  
V
IH  
1.9  
2.1  
2.1  
2.1  
3.15  
3.85  
3.15  
3.85  
3.15  
3.85  
Maximum Low–Level Input  
Voltage, Select and Inhibit  
Inputs  
2.0  
2.5  
3.0  
4.5  
5.5  
0.5  
0.6  
0.5  
0.6  
0.5  
0.6  
V
IL  
0.9  
0.9  
0.9  
1.35  
1.65  
1.35  
1.65  
1.35  
1.65  
I
I
Maximum Input Leakage  
Current, Select and Inhibit  
Inputs  
V
= 5.5 V or GND  
0 V to 5.5 V  
$0.1  
$1.0  
$1.0  
m A  
m A  
IN  
IN  
Maximum Quiescent Supply  
Current  
Select and Inhibit = V  
CC  
or GND  
5.5  
1.0  
1.0  
2.0  
CC  
DC ELECTRICAL CHARACTERISTICS – Analog Section  
Guaranteed Limit  
Symbol  
Parameter  
Maximum “ON”  
Resistance  
(Figures 17 – 23)  
Condition  
= V or V  
V
-
5
5
t
o
2
5
5
C
< 855C  
85  
46  
28  
22  
<
1
2
5
5
C
Unit  
CC  
R
V
V
2.5  
3.0  
4.5  
5.5  
70  
40  
20  
16  
105  
52  
W
ON  
IN  
IS  
IL  
IH  
= GND to V  
CC  
I
IN  
I 10.0 mA  
34  
28  
R
ON Resistance Flatness  
(Figures 17 – 23)  
V
I
= V or V  
IL IH  
4.5  
4.5  
5.5  
4
4
5
3
W
W
FLAT  
IN  
I 10.0 mA  
IN  
(ON)  
V
IS  
= 1V, 2V, 3.5V  
D R  
ON  
(ON)  
ON Resistance Match  
Between Channels  
V
= V or V  
IL IH  
I 10.0 mA  
2
2
IN  
I
V
IN  
or V = 3.5 V  
CH1  
CH0  
I
I
CH1 or CH0 Off Leakage  
Current (Figure 9)  
V
V
= V or V  
IL IH  
1
1
10  
10  
100  
100  
nA  
nA  
CH0  
CH1  
IN  
CH1  
or V = 1.0 V  
CH0 COM  
4.5 V  
I
COM ON Leakage  
Current (Figure 9)  
V
V
= V or V  
IL IH  
1.0 V or 4.5 V with V  
floating or  
1.0 V or 4.5 V with V  
floating  
5.5  
COM(ON)  
IN  
CH1  
CH0  
CH1  
V
CH1  
V
COM  
= 1.0 V or 4.5 V  
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3
NLAS1053  
AC ELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)  
r
f
Guaranteed Max Limit  
V
-55 to 25_C  
<
8
5
_
C
<
1
2
5
_
C
CC  
Symbol  
Parameter  
Turn–On Time  
(Figures 12 and 13)  
INH to Output  
Test Conditions  
= 300 WC, = 35 pF  
(V)  
Min Typ* Max Min Max Min Max Unit  
t
R
2.5  
3.0  
4.5  
5.5  
2
2
1
1
7
5
4
3
12  
10  
9
2
2
1
1
15  
15  
12  
12  
2
2
1
1
15  
15  
12  
12  
ns  
ns  
ns  
ns  
ON  
L
L
(Figures 4 and 5)  
8
t
t
t
Turn–Off Time  
(Figures 12 and 13)  
INH to Output  
R
= 300 WC, = 35 pF  
2.5  
3.0  
4.5  
5.5  
2
2
1
1
7
5
4
3
12  
10  
9
2
2
1
1
15  
15  
12  
12  
2
2
1
1
15  
15  
12  
12  
OFF  
trans  
BBM  
L
L
(Figures 4 and 5)  
8
Transition Time (Channel  
Selection Time)  
(Figure )  
R
= 300 WC, = 35 pF  
2.5  
3.0  
4.5  
5.5  
5
5
2
2
18  
13  
12  
9
28  
21  
16  
14  
5
5
2
2
30  
25  
20  
20  
5
5
2
2
30  
25  
20  
20  
L
L
(Figures and )  
Select to Output  
Minimum  
Break–Before–Make Time  
V
= 3.0 V (Figure 3)  
2.5  
3.0  
4.5  
5.5  
1
1
1
1
12  
11  
6
1
1
1
1
1
1
1
1
IS  
R = 300 W ,WC, = 35 pF  
L
L
5
*Typical Characteristics are at 25_C.  
Typical @ 25, VCC = 5.0 V  
C
C
C
C
Maximum Input Capacitance, Select/INH Input  
Analog I/O (switch off)  
Common I/O (switch off)  
8
pF  
IN  
NO  
COM  
(ON)  
orC  
NC  
10  
10  
20  
Feedthrough (switch on)  
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)  
V
CC  
Typical  
Symbol  
Parameter  
Condition  
V
25°C  
Unit  
BW  
Maximum On–Channel –3dB Bandwidth or  
Minimum Frequency Response  
(Figure 10)  
V
V
= 0 dBm  
centered between V  
CC  
3.0  
4.5  
5.5  
170  
200  
200  
MHz  
IN  
IN  
and GND  
(Figure 7)  
V
V
Maximum Feedthrough On Loss  
V
V
= 0 dBm @ 100 kHz to 50 MHz  
3.0  
4.5  
5.5  
3  
3  
3  
dB  
dB  
ONL  
IN  
IN  
centered between V  
CC  
and GND  
(Figure 7)  
Off–Channel Isolation  
(Figure 10)  
f = 100 kHz; V = 1 V RMS  
3.0  
4.5  
5.5  
93  
93  
93  
ISO  
IS  
V
centered between V  
CC  
and GND  
IN  
(Figure 7)  
Q
Charge Injection Select Input to  
Common I/O  
(Figure 15)  
V
V
GND, F = 20 kHz  
IS  
IN = CC to  
t = t = 3 ns  
3.0  
5.5  
1.5  
3.0  
pC  
r
f
R
= 0 W, C = 1000 pF  
IS L  
Q = C * V  
(Figure 8)  
L
OUT  
THD  
Total Harmonic Distortion  
THD + Noise  
(Figure 14)  
F
C
= 20 Hz to 100 kHz, R = Rgen = 600 W,  
= 50 pF  
IS  
L
L
V
IS  
= 5.0 V  
PP  
sine wave  
5.5  
0.1  
%
http://onsemi.com  
4
NLAS1053  
V
CC  
DUT  
Input  
V
CC  
Output  
GND  
V
OUT  
0.1 m F  
t
BMM  
300 Ω  
35 pF  
90% of V  
90%  
OH  
Output  
Switch Select Pin  
GND  
Figure 3. t  
(Time Break–Before–Make)  
BBM  
V
CC  
DUT  
Input  
50%  
50%  
90%  
V
CC  
Output  
0 V  
V
OUT  
0.1 m F  
V
OH  
Open  
300 Ω  
35 pF  
90%  
Output  
INH  
Input  
V
OL  
t
t
OFF  
ON  
Figure 4. t  
/t  
ON OFF  
V
CC  
V
CC  
Input  
50%  
50%  
DUT  
0 V  
300 Ω  
Output  
V
OUT  
V
OH  
Open  
35 pF  
Output  
10%  
10%  
V
OL  
INH  
Input  
t
t
ON  
OFF  
Figure 5. t  
/t  
ON OFF  
http://onsemi.com  
5
NLAS1053  
V
CC  
V
Output  
CC  
Input  
50%  
50%  
V
OUT  
0.1 m F  
0 V  
GND  
300 Ω  
35 pF  
V
CC  
90%  
Output  
Select Pin  
10%  
GND  
t
t
trans  
trans  
Figure 6. t  
(Channel Selection Time)  
trans  
50 Ω  
DUT  
Reference  
Input  
50 Generator  
Transmitted  
Output  
50 Ω  
Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is  
the bandwidth of an On switch. V , Bandwidth and V are independent of the input signal direction.  
ISO  
ONL  
V
V
OUT  
IN  
= Off Channel Isolation = 20 Logǒ Ǔ  
V
for V at 100 kHz  
IN  
ISO  
V
OUT  
= On Channel Loss = 20 Logǒ Ǔ  
V
for V at 100 kHz to 50 MHz  
IN  
ONL  
V
IN  
Bandwidth (BW) = the frequency 3 dB below V  
ONL  
Figure 7. Off Channel Isolation/On Channel Loss (BW)/Crosstalk  
(On Channel to Off Channel)/V  
ONL  
DUT  
V
CC  
V
IN  
Output  
Open  
GND  
C
L
Output  
Off  
V  
OUT  
Off  
On  
V
IN  
Figure 8. Charge Injection: (Q)  
http://onsemi.com  
6
NLAS1053  
100  
10  
1
0
Bandwidth  
(ON–RESPONSE)  
–20  
–40  
–60  
Off Isolation  
I
COM(ON)  
0.1  
I
COM(OFF)  
V
T
= 5.0 V  
= 25_C  
CC  
A
0.01  
–80  
V
CC  
= 5.0 V  
85  
I
CH(OFF)  
0.001  
–100  
0.01  
0.1  
1
10  
100 200  
–55  
–20  
25  
70  
125  
FREQUENCY (MHz)  
TEMPERATURE (°C)  
Figure 9. Switch Leakage versus Temperature  
Figure 10. Bandwidth and Off–Channel  
Isolation  
30  
25  
20  
15  
10  
0
10  
20  
30  
t
(ns)  
trans  
V
T
= 5.0 V  
0.1  
CC  
A
t
/t  
(ns)  
5
0
ON OFF  
= 25_C  
2.5  
3
3.5  
4
(VOLTS)  
4.5  
5
0.01  
1
10  
100 200  
FREQUENCY (MHz)  
V
CC  
Figure 11. Phase versus Frequency  
Figure 12. t  
and t  
versus V  
CC  
at 255C  
ON  
OFF  
30  
25  
20  
15  
10  
5
1
V
CC  
= 4.5 V  
V
= 3.0 V  
= 3.6 V  
INpp  
V
CC  
0.1  
V
= 5.0 V  
= 5.5 V  
INpp  
V
CC  
t
trans  
t
/t  
ON OFF  
0.01  
0
–55  
1
10  
FREQUENCY (kHz)  
100  
–40  
25  
Temperature (°C)  
85  
125  
Figure 14. Total Harmonic Distortion  
Plus Noise versus Frequency  
Figure 13. t  
and t versus Temp  
OFF  
ON  
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7
NLAS1053  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
100  
10  
1
0.1  
V
= 5 V  
CC  
0.01  
V
CC  
= 3.0 V  
0.001  
0.0001  
V
CC  
= 3 V  
0
V
= 5.0 V  
60  
CC  
–0.5  
0.00001  
0
1
2
3
4
5
–40  
–20  
0
20  
80  
100  
120  
Temperature (°C)  
V
COM  
(V)  
Figure 16. I  
versus Temp, V  
= 3 V & 5 V  
CC  
CC  
Figure 15. Charge Injection versus COM Voltage  
100  
90  
80  
70  
60  
50  
40  
30  
20  
100  
80  
60  
40  
20  
0
V
= 2.0 V  
CC  
85°C  
V
CC  
= 2.5 V  
125°C  
V
= 3.0 V  
CC  
25°C  
V
CC  
= 4.5 V  
–55°C  
10  
0
0
0.5  
1
1.5  
2
2.5  
0
1
2
3
4
5
V
COM  
(VOLTS)  
V
COM  
(VOLTS)  
Figure 17. R  
versus V  
and V  
255C  
Figure 18. R  
versus V  
COM  
and Temperature,  
ON  
COM  
CC (@  
ON  
V
2.0 V  
CC  
70  
60  
50  
40  
30  
20  
40  
35  
30  
25  
20  
15  
10  
25°C  
25°C  
125°C  
125°C  
85°C  
–55°C  
85°C  
10  
0
–55°C  
5
0
0
0.5  
1
1.5  
(VOLTS)  
2
2.5  
3
0
0.5  
1
1.5  
2
2.5  
3
3.5  
V
COM  
V
(VOLTS)  
COM  
Figure 19. R  
versus V  
COM  
and Temperature,  
Figure 20. R  
versus V and Temperature,  
COM  
ON  
ON  
V
= 2.5 V  
V
= 3.0 V  
CC  
CC  
http://onsemi.com  
8
NLAS1053  
20  
18  
16  
14  
12  
10  
8
18  
16  
125°C  
125°C  
14  
12  
85°C  
10  
8
85°C  
–55°C  
6
6
25°C  
–55°C  
25°C  
4
4
2
0
2
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V
COM  
(VOLTS)  
V
COM  
(VOLTS)  
Figure 22. R  
versus V and Temperature,  
COM  
Figure 21. R  
versus V  
and Temperature,  
ON  
ON  
COM  
V
= 5.0 V  
V
= 4.5 V  
CC  
CC  
20  
15  
10  
5
125°C  
85°C  
25°C  
–55°C  
0
0
1
2
3
4
5
6
V
COM  
(VOLTS)  
Figure 23. R  
versus V and Temperature,  
COM  
ON  
V
= 5.5 V  
CC  
DEVICE ORDERING INFORMATION  
Device Nomenclature  
Device  
Order Number  
Circuit  
Indicator  
Device  
Function  
Package  
Suffix  
Package Type  
Tape and Reel Size  
Technology  
NLAS1053US  
NL  
AS  
1053  
US  
US8  
178 mm (7)  
3000 Unit  
http://onsemi.com  
9
NLAS1053  
TAPE TRAILER  
(Connected to Reel Hub)  
NO COMPONENTS  
160 mm MIN  
TAPE LEADER  
NO COMPONENTS  
400 mm MIN  
COMPONENTS  
DIRECTION OF FEED  
CAVITY TOP TAPE  
TAPE  
Figure 24. Tape Ends for Finished Goods  
TAPE DIMENSIONS mm  
4.00  
4.00  
Ğ1.50 TYP  
2.00  
1.75  
3.50 $ 0.25  
+ 0.30  
8.00  
– 0.10  
1
Ğ1.00 ± 0.25 TYP  
DIRECTION OF FEED  
Figure 25. US8 Reel Configuration/Orientation  
http://onsemi.com  
10  
NLAS1053  
t MAX  
13.0 mm $0.2 mm  
(0.512 in $0.008 in)  
1.5 mm MIN  
(0.06 in)  
50 mm MIN  
(1.969 in)  
20.2 mm MIN  
(0.795 in)  
A
FULL RADIUS  
G
Figure 26. Reel Dimensions  
REEL DIMENSIONS  
Tape Size  
T and R Suffix  
A Max  
G
t Max  
8 mm  
US  
178 mm  
(7 in)  
8.4 mm, + 1.5 mm, –0.0  
(0.33 in + 0.059 in, –0.00)  
14.4 mm  
(0.56 in)  
DIRECTION OF FEED  
BARCODE LABEL  
POCKET  
HOLE  
Figure 27. Reel Winding Direction  
http://onsemi.com  
11  
NLAS1053  
PACKAGE DIMENSIONS  
US8  
US SUFFIX  
CASE 493–01  
ISSUE O  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
–X–  
A
J
2. CONTROLLING DIMENSION: MILLIMETERS  
3. DIMENSION A" DOES NOT INCLUDE MOLD  
FLASH, PROTRUSION OR GATE BURR. MOLD  
FLASH. PROTRUSION AND GATE BURR SHALL  
NOT EXCEED 0.140 MM (0.0055") PER SIDE.  
4. DIMENSION B" DOES NOT INCLUDE  
INTER-LEAD FLASH OR PROTRUSION.  
INTER-LEAD FLASH AND PROTRUSION SHALL  
NOT E3XCEED 0.140 (0.0055") PER SIDE.  
5. LEAD FINISH IS SOLDER PLATING WITH  
THICKNESS OF 0.0076-0. 0203 MM. (300-800  
INCH).  
8
5
–Y–  
DETAIL E  
B
L
6. ALL TOLERANCE UNLESS OTHERWISE  
SPECIFIED ±0.0508 (0.0002").  
1
4
R
S
G
MILLIMETERS  
INCHES  
MIN  
P
DIM MIN  
MAX  
2.10  
2.40  
0.90  
0.25  
0.35  
MAX  
0.083  
0.094  
0.035  
0.010  
0.014  
U
A
B
C
D
F
1.90  
2.20  
0.60  
0.17  
0.20  
0.075  
0.087  
0.024  
0.007  
0.008  
C
H
–T–  
0.10 (0.004)  
T
K
G
H
J
0.50 BSC  
0.40 REF  
0.020 BSC  
0.016 REF  
SEATING  
PLANE  
D
N
0.10  
0.18  
0.10  
3.20  
6
0.004  
0.007  
0.004  
0.126  
6
M
R 0.10 TYP  
M
0.10 (0.004)  
T
X Y  
K
L
0.00  
3.00  
0
0.000  
0.118  
0
M
N
P
R
S
U
V
_
_
_
_
5
10  
5
10  
V
_
_
_
_
0.28  
0.23  
0.37  
0.60  
0.44  
0.33  
0.47  
0.80  
0.011  
0.009  
0.015  
0.024  
0.017  
0.013  
0.019  
0.031  
0.12 BSC  
0.005 BSC  
F
DETAIL E  
3.8  
1.8 TYP  
0.5 TYP  
0.3 TYP  
1.0  
(mm)  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,  
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or  
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold  
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable  
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
Literature Fulfillment:  
JAPAN: ON Semiconductor, Japan Customer Focus Center  
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031  
Phone: 81–3–5740–2700  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada  
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada  
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For additional information, please contact your local  
Sales Representative.  
N. American Technical Support: 800–282–9855 Toll Free USA/Canada  
NLAS1053/D  

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