NLHV1T0434ZR2G [ONSEMI]
48 V 射频天线开关驱动器;型号: | NLHV1T0434ZR2G |
厂家: | ONSEMI |
描述: | 48 V 射频天线开关驱动器 开关 驱动 射频 驱动器 射频天线 |
文件: | 总8页 (文件大小:176K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NLHV1T0434
48 V RF Antenna Switch
Driver
The NLHV1T0434 MiniGatet is an advanced high−voltage
CMOS RF Antenna Switch Driver in ultra−small footprint.
Features
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• Single Channel/High−Drive
• High−Speed/Low−Power
MARKING
DIAGRAM
• Wide Operating V Range: 3.0 V to 5.5 V
DD
• Wide Output V Range: 16 V to 50 V
CC
• Low R
:
DSon
0434
AYW
G
NMOS = 10 W Max
PMOS = 200 W Max
MSOP−8
Z SUFFIX
CASE 846AM
• High output DC current: I ≥ 130 mA
OL
• Max input frequency: 2 MHz minimum
0434 = Specific Device Code
• Low Static Current: I
, I
= 100 mA
DDmax CCmax
A
Y
W
G
= Assembly Location
• Low Dynamic Current @ 100 kHz:
= 0.2 mA, I = 1.0 mA
= Year
I
= Work Week
= Pb−Free Package
DDdynmax
CCdynmax
• Available in MSOP8−EP
• These Devices are Pb−Free, Halogen−Free/BFR−Free and are
(Note: Microdot may be in either location)
RoHS−Compliant
PIN CONNECTIONS
1
8
V
GND
ON
DD
NC
OP
V
CC
OGND
IN
(Top View)
ORDERING INFORMATION
†
Device
NLHV1T0434ZR2G
Package
MSOP8−EP 3000 / Tape
(Pb−Free) & Reel
Shipping
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
March, 2018 − Rev. 0
NLHV1T0434/D
NLHV1T0434
Figure 1. Block Diagram
Table 1. PIN ASSIGNMENT
Pin
1
Pin Name
Description
Digital Power Supply
V
DD
2
NC
No Connect
High Voltage Supply
Input
3
V
CC
4
IN
5
GND
OP
Ground
6
Non−Inverted Output
Inverted Output
Ground
7
ON
8
GND
Table 2. FUNCTION TABLE
Input
Output
A
L
OP
L
ON
H
H
H
L
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2
NLHV1T0434
Table 3. MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
V
DD
V
CC
Digital Supply Voltage
High−Voltage Supply Voltage
DC Input Voltage
−0.5 to +7.0
−0.5 to +55.0
−0.5 to +7.0
V
V
IN
V
V
OUT
DC Output Voltage
−0.5 to V + 0.5
V
CC
I
DC Input Diode Current
DC Output Diode Current
V
< GND
> V , V < GND
OUT
−20
mA
mA
mA
mA
mA
°C
°C
°C
IK
IN
I
V
OUT
200
OK
CC
I
DC Output Source/Sink Current
DC Supply Current Per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
200
O
I
200
CC
I
200
−65 to +150
260
GND
T
STG
T
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
L
T
150
J
MSL
Level 1
F
R
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage
Human Body Mode (Note 2)
> 4
> 2
kV
Charged Device Model (Note 3)
I
Latchup Performance Above V and Below GND at 125°C
(Note 4)
(Note 5)
100
5
mA
LATCHUP
CC
SR
Minimum V Rise Rate
ms/V
VCC
CC
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22−A114−A.
3. Tested to JESD22−C101−A.
4. Tested to EIA / JESD78.
5. A faster V rise rate could damage the output of the device.
CC
Table 4. RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
3.0
16
0
Max
5.5
50
Unit
V
V
DD
V
CC
Digital Supply Voltage
High Voltage Supply Voltage
Digital Input Voltage
Output Voltage
V
V
IN
5.5
V
V
OUT
0
V
CC
V
T
Operating Free−Air Temperature
Input Transition Rise or Fail Rate
−55
0
+125
20
°C
nS/V
A
Dt / DV
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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3
NLHV1T0434
Table 5. DC ELECTRICAL CHARACTERISTICS
T
A
=
−555C to +1255C
T
A
= 255C
Typ
−
Min
Max
Min
Max
Symbol
Parameter
Conditions
V
DD
(V)
V
CC
(V)
Unit
V
High−Level Input
Voltage
3.0 to 5.5
3.0 to 5.5
3.0 to 5.5
3.0 to 5.5
3.0 to 5.5
3.0 to 5.5
3.0 to 5.5
3.0 to 5.5
3.0 to 5.5
3.0 to 5.5
16 to 50
16 to 50
16 to 50
16 to 50
16 to 50
16 to 50
16 to 50
16 to 50
16 to 50
16 to 50
1.7
−
1.7
−
V
IH
V
Low−Level Input
Voltage
−
−
0.4
−
0.4
V
V
IL
V
OH
High−Level Output
Voltage
V
= V or V ,
= −100 mA
V
−0.5
V
CC
V
−0.5
IN
IH
IL
CC
CC
I
OH
V
OL
Low−Level Output
Voltage
V
IN
= V or V ,
−
0.04
−
0.2
10
GND
0.2
10
V
IH
IL
I
OL
= 10 mA
I
IN
Input Leakage
Current
V
IN
= 0 to 5.5 V
−
−
−
−
−
−
−
−
−
−
−
−
mA
mA
mA
W
I
Quiescent Supply
Current
V
IN
= V or
50
50
4
100
100
10
100
100
10
DD
CC
DD
GND
I
Quiescent Supply
Current
V
IN
GND
= V or
DD
R
Output NMOS ON
Resistance
I
I
I
= 130 mA
= 130 mA
= −100 mA
ONN
OL
OL
OH
R
Output NMOS ON
Resistance Flatness
0.4
60
2
3
W
ONNFLAT
R
Output PMOS ON
Resistance
200
200
W
ONP
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
NLHV1T0434
Table 6. AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 nS)
T
A
=
−555C to +1255C
T
A
= 255C
Typ
38
Min
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
100
100
100
100
80
Min
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
100
100
100
100
80
Symbol
t
Parameter
High to Low
Test Condition
C = 1 nF
V
(V)
V
(V)
Unit
DD
CC
3.0 to 5.5
3.0 to 5.5
3.0 to 5.5
3.0 to 5.5
3.0 to 5.5
3.0 to 5.5
3.0 to 5.5
3.0 to 5.5
50
ns
PHL
L
Propagation Delay,
IN to OP, ON
48
28
18
50
48
28
18
50
48
28
18
50
48
28
18
50
48
28
18
50
48
28
18
50
48
28
18
50
48
28
18
38
31
28
C = 10 pF
L
21
21
80
80
21
80
80
20
80
80
t
Low to High
C = 1 nF
L
159
159
95
400
400
400
400
60
400
400
400
400
60
ns
ns
ns
PLH
Propagation Delay,
IN to OP, ON
69
C = 10 pF
L
16
16
60
60
13
60
60
12
60
60
t
F
Output Fall Time
Output Rise Time
Dynamic Current
C = 1 nF
L
28.5
28.5
19.3
14.5
4.1
100
100
100
100
50
100
100
100
100
50
C = 10 pF
L
4.1
50
50
3.0
50
50
2.1
50
50
t
R
C = 1 nF
L
285.7
285.7
182.6
144.4
8.6
1000
1000
1000
1000
50
1000
1000
1000
1000
50
C = 10 pF
L
8.6
50
50
5.1
50
50
4.4
50
50
I
I
f = 100 kHz;
ON, OP open
3.0 to 5.5
3.0 to 5.5
3.0 to 5.5
16 to 50
16 to 50
16 to 50
0.1
0.2
0.2
mA
mA
DD−DYN
at V
DD
Dynamic Current
at V
f = 100 kHz;
ON, OP open
0.5
1.0
1.0
CC−DYN
CC
f
Maximum Input
Frequency
ON, OP open
2
2
MHz
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5
NLHV1T0434
Δ
t/Δv = 3 ns
Δt/Δv = 3 ns
VDD
10%
10%
50%
IN
50%
90%
90%
GND
VOH
tPD
tPD
90%
50%
90%
50%
OP
ON
tR
10%
tF
10%
VOL
tF
tR
VOH
90%
90%
50%
10%
Figure 2. Switching Waveforms
50%
50%
10%
VOL
VDD
VCC
IDD−DYN
ICC−DYN
A
A
OP
DUT
IN
ON
100 kHz
Figure 3. Test Set−up for Dynamic Current
MiniGate is a trademark of Semiconductor Components Industries, LLC.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
MSOP8 EP, 3x3
CASE 846AM
ISSUE B
DATE 07 JAN 2022
GENERIC
MARKING DIAGRAM*
8
XXXX
AYWG
G
1
XXXX
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
A
Y
W
G
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON82708F
MSOP8 EP, 3X3
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
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