NLHV4157NDFT2G [ONSEMI]
负电压 SPDT 开关;
| 型号： | NLHV4157NDFT2G |
| 厂家： | 
ONSEMI |
| 描述： | 负电压 SPDT 开关 开关 PC 光电二极管 |
| 文件： | 总11页 (文件大小：317K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MARKING
DIAGRAM
Negative Voltage SPDT
Switch
6
SC−88
DF SUFFIX
CASE 419B
HWMG
NLHV4157N
G
The NLHV4157N is an advanced CMOS analog switch fabricated
with silicon gate CMOS technology. The device passes analog and
digital negative voltages that may vary across the full power−supply
1
6
SC−88
DF SUFFIX
CASE 419AD
xxMG
range (from V to GND).
EE
G
Features
1
• Operating Voltage Range: V = −12 V to −4 V
EE
HW/xx = Device Code
• Switch Signal Voltage Range: V = V to GND
IS
EE
M
G
= Date Code*
= Pb−Free Package
• Positive Control Signal Voltage: V = 0 to 3.3 V
IN
(Note: Microdot may be in either location)
• Low ON Resistance: R ≤ 5 W @ V = −10 V
ON
EE
*Date Code orientation and/or position may vary
depending upon manufacturing location.
• Latch−up Performance Exceeds 200 mA
• Available in: SC−88 6−Pin Package
• These Devices are Pb−Free, Halogen−Free/BFR- Free and are
RoHS−Compliant
FUNCTION TABLE
Select Input
Function
L
B0 Connected to A
H
B1 Connected to A
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Figure 1. Pin Assignment and logic Diagram
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
June, 2023 − Rev. 2
NLHV4157N/D
NLHV4157N
ORDERING INFORMATION
Device
†
Marking
Package
SC−88
Case Code
419B
Shipping
NLHV4157NDFT2G
HW
XX
3000 / Tape & Reel
3000 / Tape & Reel
NLHV4157NSDFT2G
(In Development, please contact onsemi)
SC−88
419AD
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
V
V
EE
DC Supply Voltage
−13 to +0.5
V
Analog Input Voltage (Note 1)
V
EE
−0.5 to +0.5
V
IS
IN
V
Digital Select Input Voltage (Note 1)
Switch Input/Output diode current
Select input diode current
−0.5 to +3.6
50
V
I
mA
mA
mW
°C
°C
IOK
I
IK
−50
P
Power Dissipation in Still Air
Lead Temperature, 1 mm from Case for 10 seconds
Junction Bias Under Bias
60
D
T
260
L
T
150
J
MSL
Moisture Sensitivity
Level 1
F
Flammability Rating
Oxygen Index: 30% − 35%
Below GND and above V at 125°C
UL94−V0 (0.125 in)
°C
R
L
I
Latch−up Current (Note1)
200
300
mA
EE
Below GND and above V at 25°C
EE
T
Storage Temperature
Thermal Resistance
ESD Protection
−65 to +150
400
°C
°C/W
V
s
q
JA
ESD
Human Body Model
Machine Model
3000
150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The input and output voltage ratings may be exceeded if the input and output diode current ratings are observed.
RECOMMENDED OPERATING CONDITIONS (Note 2)
Symbol
Parameter
Min
Max
−4
Unit
V
V
V
DC Supply Voltage
−12
EE
V
S
Switch Input / Output Voltage
Digital Select Input Voltage
Operating Temperature Range
(B0, B1, A)
V
EE
GND
3.3
V
GND
−55
0
V
IN
T
A
+125
100
°C
ns/V
t , t
Input Transition Rise or Fall Time (Select Input)
r
f
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
2. Select input must be held HIGH or LOW, it must not float.
www.onsemi.com
2
NLHV4157N
DC ELECTRICAL CHARACTERISTICS (Voltages referenced to GND; Typical characteristics are T at 25°C.)
A
−555 to 1255C
Min
Typ
Max
Symbol
Parameter
Condition
V
EE
, V
Unit
SELECT INPUT
V
Minimum High−Level
−12
−10
−8
1.8
1.6
1.4
1.2
1.0
0
3.3
3.3
3.3
3.3
3.3
0.8
0.7
0.6
0.5
0.4
50
V
IH
Input Voltage
−6
−4
V
Maximum Low−Level
Input Voltage
−12
−10
−8
V
IL
0
0
−6
0
−4
0
I
IN
Maximum Input Leakage
Current
V
V
= 3.3 V or GND
−10
−10
0.2
25
mA
IN
= 3.3 V or GND, test at 25°C only
0.5
IN
POWER SUPPLY
I
Maximum Quiescent
Supply Current
Select = 3.3 V or GND,
−10 to −4
80
mA
CC
V
IS
= V or GND
EE
ANALOG SWITCH
R
Maximum ON
V
V
I
= V or V
IH
EE
v 10 mA
−12
−10
−8
2.6
3.0
3.5
4.5
9
4.5
5
W
ON
IN
IS
O
IL
Resistance (Note 3)
= V to GND
5.8
7.5
15
−6
V
V
I
= V or V
IH
−4
IN
IS
O
IL
= V to GND
EE
v 5 mA
R
ON Resistance
Flatness (Notes 3, 4, 6)
V
V
I
= V or V
−12
−10
−8
0.4
1.2
1.7
2.5
6
W
FLAT
IN
IS
O
IL
IH
= V to GND
EE
v 10 mA
−6
V
V
I
= V or V
IH
−4
IN
IS
O
IL
= V to GND
EE
v 5 mA
DR
R
Mismatch
I
A
I
A
I
A
I
A
I
A
= −10 mA, V = −8.4 V
−12
−10
−8
0.2
0.2
W
ON
ON
Bn
Between (Notes 3, 4, 5)
= −10 mA, V = −7 V
Bn
= −10 mA, V = −5.6 V
0.25
0.25
0.3
Bn
= −10 mA, V = −4.2 V
−6
Bn
= −5 mA, V = −2.8 V
−4
Bn
I
,
NC or NO OFF Leakage
Current (Figure 9)
V
= V or V , V = GND, V = V
−10
1.0
20
20
mA
mA
NC(OFF)
IN
IL
IH
Bn
A
EE
I
to GND
NO(OFF)
I
COM ON Leakage
Current (Figure 9)
V
IN
= V or V
;
−10
2.0
COM(ON)
IL
IH
V = GND V or V
;
A
EE
V
B1
V
B0
= GND or V with V floating, or
EE B0
= GND or V with V floating
EE
B1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Measured by the voltage drop between A and B pins at the indicated current through the switch. On Resistance is determined by the lower
of the voltages on the two (A or B Ports).
4. Parameter is characterized but not tested in production.
5. nR = R max * R min measured at identical V , temperature and voltage levels.
ON
ON
ON
EE
6. Flatness is defined as the difference between the maximum and minimum value of ON Resistance over the specified range of conditions.
www.onsemi.com
3
NLHV4157N
AC ELECTRICAL CHARACTERISTICS (Voltages referenced to GND; Typical characteristics are T at 25°C.)
A
−555 to 1255C
Min
Typ
Max
Symbol
, t
Parameter
Condition
C = 100 pF (Figures 2, 3)
V
, V
Unit
EE
t
Propagation Delay,
Bus to Bus (Note 8)
−12 to −4
2
ns
PHL PLH
L
(A to B )
n
t
, t
Switch Enable Time
Turn−On Time
C = 100 pF (Figures 2, 3)
−12
−10
220
175
165
165
200
225
155
150
120
145
60
ns
ns
ns
PZL PZH
L
(A to B )
n
−8
−6
−4
t
, t
Switch Disable Time
Turn−Off Time
C = 100 pF (Figures 2, 3)
L
−12
PLZ PHZ
−10
(A to B )
n
−8
−6
−4
t
B
Switch Break Time
R = 50 W, C = 100 pF,
−12
5
L
IS
L
V
= −2.5 V (Figure 4)
−10
5
60
−8
10
10
40
75
−6
90
−4
135
20
t
Power ON Reset Time
Measured from V = −4 V
−12 to −4
−12
ms
POR
EE
Q
Charge Injection
(Note 7)
C = 1 nF, V
= 0 V,
170
120
95
pC
L
GEN
R
= 0 W (Figure 5)
GEN
−10
−8
−6
55
−4
40
OIRR
Xtalk
BW
Off−Isolation (Note 9)
Crosstalk
R = 50 W, f = 10 MHz (Figure 6)
−12 to −4
−12 to −4
−12 to −4
−33
−42
200
dB
dB
L
R = 50 W, f = 10 MHz (Figure 7)
L
−3 dB Bandwidth
R = 50 W (Figure 10)
L
MHz
7. Guaranteed by Design.
8. This parameter is guaranteed by design but not tested. The bus switch contributes no propagation delay other than the RC delay of the ON
Resistance of the switch and the 50 pF load capacitance, when driven by an ideal voltage source (zero output impedance).
9. Off Isolation = 20 log10 [VA/VBn].
CAPACITANCES (Note 10)
Symbol
Parameter
Input Capacitance, Select Inputs
B−Port OFF Capacitance
Test Conditions
Typical @ 255C
Unit
pF
C
V
EE
V
EE
V
EE
= −12 V
= −10 V
= −10 V
6
IN
C
45
pF
IOB
C
A Port Capacitance when Switch is Enabled
100
pF
IOA_ON
10.T = +25°C, f = 1 MHz, Capacitance is characterized but not tested in production.
A
www.onsemi.com
4
NLHV4157N
VI
250 Ω
250 Ω
BN
S
OUTPUT
VIS
CL
LOGIC
INPUT
Note: Input V driven by 50 W source terminated by 50 W.
IS
Note: C includes load and stray capacitance.
L
Input PRR = 100 kHz, t = 5 ms.
W
Parameter
/ t
V
V
IS
I
t
Open
GND
Source
PLH PHL
t
/ t
V
EE
PZL PLZ
t
/ t
2 x V
GND
PZH PHZ
EE
Figure 2. AC Test Circuit
Figure 3. AC Test Waveforms
www.onsemi.com
5
NLHV4157N
Figure 4. Switch Break Interval Timing
Figure 5. Charge Injection Test
Figure 6. Off Isolation
Figure 7. Crosstalk
Figure 8. Channel Off Capacitance
Figure 9. Channel On Capacitance
www.onsemi.com
6
NLHV4157N
0.707 @ VA
BW +
,
n + 0 or 1
VBn
Figure 10. Bandwidth
Figure 11. Typical Application
www.onsemi.com
7
NLHV4157N
PACKAGE DIMENSIONS
SC−88 (SC−70 6 Lead), 1.25x2
CASE 419AD
ISSUE A
SYMBOL
MIN
NOM
MAX
D
0.80
A
1.10
e
e
A1
A2
0.00
0.80
0.10
1.00
b
c
0.15
0.10
1.80
1.80
1.15
0.30
0.18
2.20
2.40
1.35
D
2.00
2.10
E1
E
E
E1
e
1.25
0.65 BSC
0.36
L
0.26
0.46
L1
L2
θ
0.42 REF
0.15 BSC
TOP VIEW
0º
4º
8º
10º
θ1
q1
A2
A1
A
q
L
b
L1
q1
c
L2
SIDE VIEW
END VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MO-203.
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
1
DATE 11 DEC 2012
SCALE 2:1
2X
aaa H
D
NOTES:
D
H
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
D
GAGE
PLANE
6
1
5
2
4
3
L
L2
E1
E
DETAIL A
aaa
C
2X
2X 3 TIPS
bbb H
D
e
MILLIMETERS
DIM MIN NOM MAX
−−−
INCHES
MIN
−−−
NOM MAX
−−− 0.043
−−− 0.004
6X b
B
TOP VIEW
A
−−−
−−−
1.10
A1 0.00
A2 0.70
0.10 0.000
M
ddd
C A-B D
0.90
0.20
0.15
2.00
2.10
1.25
0.65 BSC
0.36
1.00 0.027 0.035 0.039
0.25 0.006 0.008 0.010
0.22 0.003 0.006 0.009
2.20 0.070 0.078 0.086
2.20 0.078 0.082 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b
C
D
E
0.15
0.08
1.80
2.00
A2
DETAIL A
A
E1 1.15
e
L
0.26
0.46 0.010 0.014 0.018
0.006 BSC
L2
0.15 BSC
0.15
aaa
bbb
ccc
ddd
0.006
0.012
0.004
0.004
0.30
0.10
0.10
6X
ccc C
A1
SEATING
PLANE
c
C
SIDE VIEW
END VIEW
GENERIC
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT*
6
6X
0.30
XXXMG
6X
0.66
G
1
2.50
XXX = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
0.65
(Note: Microdot may be in either location)
PITCH
*Date Code orientation and/or position may
vary depending upon manufacturing location.
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1. ANODE 2
2. N/C
PIN 1. CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
PIN 1. ANODE
2. ANODE
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
3. COLLECTOR
3. CATHODE 1
4. ANODE 1
5. N/C
4. EMITTER
5. BASE
6. COLLECTOR 2
6. ANODE
6. CATHODE
6. CATHODE 2
STYLE 7:
STYLE 8:
CANCELLED
STYLE 9:
STYLE 10:
STYLE 11:
STYLE 12:
PIN 1. SOURCE 2
2. DRAIN 2
3. GATE 1
PIN 1. EMITTER 2
2. EMITTER 1
3. COLLECTOR 1
4. BASE 1
PIN 1. SOURCE 2
2. SOURCE 1
3. GATE 1
PIN 1. CATHODE 2
2. CATHODE 2
3. ANODE 1
PIN 1. ANODE 2
2. ANODE 2
3. CATHODE 1
4. ANODE 1
5. ANODE 1
6. CATHODE 2
4. SOURCE 1
5. DRAIN 1
6. GATE 2
4. DRAIN 1
5. DRAIN 2
6. GATE 2
4. CATHODE 1
5. CATHODE 1
6. ANODE 2
5. BASE 2
6. COLLECTOR 2
STYLE 13:
PIN 1. ANODE
2. N/C
STYLE 14:
PIN 1. VREF
2. GND
STYLE 15:
STYLE 16:
STYLE 17:
STYLE 18:
PIN 1. VIN1
2. VCC
PIN 1. ANODE 1
2. ANODE 2
PIN 1. BASE 1
2. EMITTER 2
3. COLLECTOR 2
4. BASE 2
PIN 1. BASE 1
2. EMITTER 1
3. COLLECTOR 2
4. BASE 2
3. COLLECTOR
4. EMITTER
5. BASE
3. GND
3. ANODE 3
3. VOUT2
4. VIN2
5. GND
6. VOUT1
4. IOUT
5. VEN
6. VCC
4. CATHODE 3
5. CATHODE 2
6. CATHODE 1
5. EMITTER 1
6. COLLECTOR 1
5. EMITTER 2
6. COLLECTOR 1
6. CATHODE
STYLE 19:
PIN 1. I OUT
2. GND
STYLE 20:
STYLE 21:
PIN 1. ANODE 1
2. N/C
STYLE 22:
PIN 1. D1 (i)
2. GND
STYLE 23:
PIN 1. Vn
2. CH1
3. Vp
STYLE 24:
PIN 1. CATHODE
2. ANODE
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
3. GND
3. ANODE 2
4. CATHODE 2
5. N/C
3. D2 (i)
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
4. V CC
4. EMITTER
5. COLLECTOR
6. COLLECTOR
4. D2 (c)
5. VBUS
6. D1 (c)
4. N/C
5. V EN
5. CH2
6. N/C
6. V REF
6. CATHODE 1
STYLE 30:
STYLE 25:
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
STYLE 27:
PIN 1. BASE 2
2. BASE 1
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
STYLE 29:
PIN 1. ANODE
2. ANODE
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
PIN 1. BASE 1
2. CATHODE
3. COLLECTOR 2
4. BASE 2
3. DRAIN 2
4. SOURCE 2
5. GATE 2
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
4. SOURCE
5. DRAIN
6. DRAIN
5. EMITTER
6. COLLECTOR 1
6. DRAIN 1
6. DRAIN 1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
©2020 ICPDF网 联系我们和版权申明