NLSF457MU3TCG [ONSEMI]
Special Function Logic Gate;
| 型号： | NLSF457MU3TCG |
| 厂家： | 
ONSEMI |
| 描述： | Special Function Logic Gate 栅 |
| 文件： | 总8页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Special Function Logic Gate
NLSF457
Description
The NLSF457 is a single special function gate in tiny footprint
package.
Features
www.onsemi.com
• Designed for 1.65 V to 5.5 V V Operation
CC
• 2.7 ns t at 5 V (typ)
PD
• Inputs/Outputs Over−Voltage Tolerant up to 5.5 V
• I
Supports Partial Power Down Protection
• Source/Sink 24 mA at 3.0 V
OFF
UDFN8, 1.45x1, 0.35P
CASE 517EB
• Available in 1.45 mm x 1.0 mm UDFN8 Package
• Chip Complexity < 100 FETs
MARKING DIAGRAM
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
XXM
G
A
XX
M
G
= Specific Device Code
= Assembly Operation Code*
= Pb−Free Package
B
Y
C
(Note: Microdot may be in either location)
*Assembly Operation Code orientation and/or may
vary depending upon manufacturing location.
D
PIN ASSIGNMENT
Figure 1. Logic Diagram
nc
D
1
2
3
4
8
7
6
5
V
Y
A
B
CC
C
GND
Pin
1
Name
Description
No Connect
Input
nc
D
2
3
C
Input
4
GND
B
Ground
Input
5
6
A
Input
7
Y
Output
8
V
CC
Power Supply
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
February, 2021 − Rev. 1
NLSF457/D
NLSF457
Table 1. FUNCTION TABLE
Input
Output
A
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
B
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
C
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
D
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Y
0
1
0
0
1
1
1
1
0
1
0
0
0
1
0
0
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2
NLSF457
MAXIMUM RATINGS
Symbol
Parameter
Ratings
Unit
V
V
CC
DC Supply Voltage
DC Input Voltage
DC Output Voltage
−0.5 to +6.5
−0.5 to +6.5
V
IN
V
V
OUT
Active−Mode (High or Low State)
Tri−State Mode (Note 1)
−0.5 to V +0.5
V
CC
−0.5 to +6.5
Power−Down Mode (V = 0 V)
−0.5 to +6.5
CC
I
DC Input Diode Current
V
< GND
−50
mA
mA
mA
mA
°C
IK
IN
OUT
I
DC Output Diode Current
DC Output Source/Sink Current
V
< GND
−50
OK
I
50
OUT
I
or I
GND
STG
DC Supply Current Per Supply Pin or Ground Pin
Storage Temperature Range
100
CC
T
−65 to +150
T
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
260
°C
L
T
+150
°C
J
q
Thermal Resistance (Note 2)
Power Dissipation in Still Air at 125°C
Moisture Sensitivity
UDFN8
UDFN8
231
°C/W
mW
JA
P
541
Level 1
D
MSL
F
Flammability Rating
Oxygen Index: 28 to 34
Charged Device Model
Human Body Model
UL 94 V−0 @ 0.125 in
> 2000
R
V
ESD
ESD Withstand Voltage (Note 3)
V
> 1000
I
Latchup Performance (Note 4)
100
mA
LATCHUP
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Applicable to devices with outputs that may be tri−stated.
2. Measured with minimum pad spacing on an FR4 board, using 10mm – by – 1inch, 2 ounce copper trace no air flow per JESD51−7.
3. HBM tested to ANSI/ESDA/JEDEC JS−001−2017. CDM tested to EIA/JESD22−C101−F. JEDEC recommends that ESD qualification to
EIA/JESD22−A115−A (Machine Model) be discontinued per JEDEC/JEP172A.
4. Tested to EIA/JESD78 Class II.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
1.65
0
Max
5.5
Unit
V
V
CC
Positive DC Supply Voltage
Digital Input Voltage
Output Voltage
V
IN
5.5
V
V
OUT
Active Mode (High or Low State)
0
V
CC
V
Tri−State Mode (Note 1)
0
5.5
5.5
+125
20
Power Down Mode (V = 0 V)
0
CC
T
A
Operating Free−Air Temperature
−55
0
°C
t , t
Input Transition Rise or Fall Rate
V
CC
V
CC
V
CC
V
CC
= 1.65 V to 1.95 V
= 2.3 V to 2.7 V
= 3.0 V to 3.6 V
= 4.5 V to 5.5 V
nS/V
r
f
0
20
0
10
0
5
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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3
NLSF457
DC ELECTRICAL CHARACTERISTICS
T
A
= 25°C
T = −55°C to +125°C
A
Symbol
Parameter
Min
Typ
−
Max
Min
Max
Unit
Conditions
V
(V)
CC
V
V
V
High−Level
Input Voltage
1.65 to 1.95 0.65 x V
−
−
0.65 x V
−
−
V
IH
CC
CC
2.3 to 5.5
1.65 to 1.95
2.3 to 5.5
0.70 x V
−
0.70 x V
CC
CC
Low−Level
Input Voltage
−
−
−
0.35 x V
0.30 x V
−
−
−
0.35 x V
0.30 x V
−
V
V
IL
CC
CC
−
CC
CC
High−Level
Output Voltage
V
V
V
= V or V
IH IL
OH
IN
IN
IN
I
I
I
I
I
I
I
= −100 mA 1.65 to 5.5
V
– 0.1
V
CC
V
– 0.1
OH
OH
OH
OH
OH
OH
OH
CC
CC
= −4 mA
= −8 mA
= −12 mA
= −16 mA
= −24 mA
= −32 mA
1.65
2.3
2.7
3.0
3.0
4.5
1.29
1.4
2.1
2.4
2.7
2.5
4.0
1.29
1.9
2.2
2.4
2.3
3.8
1.9
2.2
2.4
2.3
3.8
V
OL
Low−Level
Output Voltage
= V or V
IL
−
−
V
IH
I
OL
I
OL
I
OL
I
OL
I
OL
I
OL
I
OL
= 100 mA
= 4 mA
1.65 to 5.5
1.65
2.3
0.1
0.24
0.3
0.4
0.4
0.55
0.55
0.1
0.24
0.3
0.4
0.4
0.55
0.55
0.08
0.2
0.22
0.28
0.38
0.42
= 8 mA
= 12 mA
= 16 mA
= 24 mA
= 32 mA
2.7
3.0
3.0
4.5
I
I
I
Input Leakage
Current
= 5.5 V or
GND
1.65 to 5.5
−
−
−
−
−
−
0.1
1.0
1.0
−
−
−
1.0
mA
mA
mA
IN
Power Off
Leakage Current
V
V
= 5.5 V or
OUT
0
10
OFF
CC
IN
= 5.5 V
Quiescent
Supply Current
V
= V or GND
5.5
10
IN
CC
AC ELECTRICAL CHARACTERISTICS
T
A
= 25°C
Typ
7.7
T = −55°C to +125°C
A
Symbol
Characteristic
Min
Max
10
Min
−
Max
10.5
8.0
Unit
Conditions
V
CC
(V)
t
,
Propagation Delay,
(A or B or C or D)
to Y
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
−
−
−
−
−
−
ns
R = 1 MW, C = 15 pF
PLH
L
L
t
PHL
R = 1 MW, C = 15 pF
4.2
7.5
5.2
5.7
4.5
5.0
−
L
L
(Figures 3 and 4)
R = 1 MW, C = 15 pF
3.0
−
5.5
L
L
R = 500 W, C = 50 pF
3.5
−
6.0
L
L
4.5 to 5.5
2.3
−
4.8
R = 1 MW, C = 15 pF
L
L
R = 500 W, C = 50 pF
2.6
−
5.3
L
L
CAPACITAVE CHARACTERISTICS
Symbol
Parameter
Input Capacitance
Output Capacitance
Power Dissipation Capacitance (Note 5)
Test Condition
Typical (T = 25 5C)
Unit
pF
A
C
V
V
= 5.5 V, V = 0 V or V
2.5
2.5
9
IN
CC
IN
CC
CC
C
= 5.5 V, V = 0 V or V
pF
OUT
CC
IN
C
10 MHz, V = 3.3 V, V = 0 V or V
pF
PD
CC
IN
CC
10 MHz, V = 5.5 V, V = 0 V or V
11
CC
IN
CC
5. C is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
PD
load. Average operating current can be obtained by the equation I
= C S V S f + I . C is used to determine the no−load
CC(OPR)
PD
CC
in
CC
PD
2
dynamic power consumption: P = C S V
S f + I S V
D
PD
CC
in
CC
CC.
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4
NLSF457
OPEN
2 x V
DUT
GND
CC
Switch
R
1
L
Position
Test
/ t
C , pF
R , W
R , W
1
L
L
INPUT
t
t
Open
See AC Characteristics Table
OUTPUT
C *
PLH PHL
t
/ t
PLZ PZL
2 x V
50
50
500
500
500
500
CC
R
T
R
L
/ t
GND
PHZ PZH
C includes probe and jig capacitance
L
R is Z
of pulse generator (typicaly 50 W)
T
OUT
f = 1 MHz
Figure 2. Test Circuit
V
CC
t = 3 ns
t = 3 ns
f
r
V
CC
90%
90%
V
INPUT
V
mi
V
mi
INPUT
V
mi
mi
GND
10%
10%
GND
t
t
PLZ
PZL
~V
t
t
t
t
CC
PHL
PLH
V
OH
V
V
OUTPUT
OUTPUT
mo
V
V
OUTPUT
OUTPUT
mo
mo
mo
V
V
+ V
OL
Y
V
OL
V
V
OL
t
t
PHZ
PZH
PLH
PHL
V
OH
Y
OH
+ V
OH
V
mo
V
mo
V
OL
~ 0 V
V , V
mo
V
CC
, V
V
mi
, V
t
, t
t
, t
, t
, t
V , V
Y
PLH PHL
PZL PLZ PZH PHZ
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
4.5 to 5.5
V
CC
V
CC
V
CC
V
CC
/2
/2
/2
/2
V
CC
V
CC
V
CC
V
CC
/2
/2
/2
/2
V
CC
V
CC
V
CC
V
CC
/2
/2
/2
/2
0.15
0.15
0.3
0.3
Figure 3. Switching Waveforms
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5
NLSF457
ORDERING INFORMATION
Device
†
Package
UDFN8, 1.45 x 1.0, 0.35P
Marking
Pin 1 Orientation (see bellow)
Shipping
NLSF457MU3TCG
AA
Q4
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
* NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC*Q100 Qualified and
PPAP Capable.
Pin 1 Orientation in Tape and Reel
Direction of Feed
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN8, 1.45x1.0, 0.35P
CASE 517EB
ISSUE O
DATE 27 AUG 2018
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXM
XX
M
= Specific Device Code
= Date Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON97212G
UDFN8, 1.45x1.0, 0.35P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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rights of others.
© Semiconductor Components Industries, LLC, 2018
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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