NLSX0102FC2T2G [ONSEMI]

2-Bit 20 Mb/s Dual-Supply Level Translator;
NLSX0102FC2T2G
型号: NLSX0102FC2T2G
厂家: ONSEMI    ONSEMI
描述:

2-Bit 20 Mb/s Dual-Supply Level Translator

文件: 总10页 (文件大小:100K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NLSX0102  
2-Bit 20 Mb/s Dual-Supply  
Level Translator  
The NLSX0102 is a 2−bit configurable dual−supply bidirectional  
auto sensing translator that does not require a directional control pin.  
The I/O V and I/O V ports are designed to track two different  
CC  
L
www.onsemi.com  
MARKING  
power supply rails, V and V respectively. Both the V and V  
CC  
L
CC  
L
supply rails are configurable from 1.5 V to 5.5 V. This allows voltage  
logic signals on the V side to be translated into lower, higher or equal  
L
DIAGRAM  
value voltage logic signals on the V side, and vice−versa.  
CC  
A2  
The NLSX0102 translator has integrated 10 kW pull−up resistors on  
the I/O lines. The integrated pull−up resistors are used to pull−up the  
AAG  
AYWW  
A1  
I/O lines to either V or V . The NLSX0102 is an excellent match  
L
CC  
2
D1  
FLIP−CHIP 8  
CASE 499BF  
A1  
for open−drain applications such as the I C communication bus.  
Features  
V can be Less than, Greater than or Equal to V  
L
CC  
AAG  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
Wide V Operating Range: 1.5 V to 5.5 V  
CC  
Wide V Operating Range: 1.5 V to 5.5 V  
L
WW  
= Work Week  
High−Speed with 24 Mb/s Guaranteed Date Rate  
Low Bit−to−Bit Skew  
PIN ASSIGNMENTS  
Enable Input and I/O Pins are  
Overvoltage Tolerant (OVT) to 5.5 V  
Non−preferential Power−up Sequencing  
Integrated 10 kW Pull−up Resistors  
Small Space Saving Package  
− 1.9 mm x 0.9 mm x 0.5 mm Flipchip8  
This is a Pb−Free Device  
A1  
B1  
C1  
D1  
A2  
B2  
C2  
D2  
I/O V  
2
I/O V  
1
CC  
CC  
GND  
V
CC  
EN  
V
L
I/O V 2  
I/O V 1  
L
L
Typical Applications  
2
I C, SMBus  
(Top View)  
Low Voltage ASIC Level Translation  
Mobile Phones, PDAs, Cameras  
LOGIC DIAGRAM  
V
V
CC  
GND  
L
EN  
Important Information  
ESD Protection for All Pins  
− Human Body Model (HBM) > 7000 V  
I/O V 1  
I/O V  
I/O V  
1
2
L
CC  
I/O V 2  
L
CC  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 9 of this data sheet.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
July, 2018 − Rev. 2  
NLSX0102/D  
NLSX0102  
V
L
V
CC  
One−Shot  
Block  
One−Shot  
Block  
PU1  
PU2  
Gate  
Bias  
R
10 kW  
R
Pullup  
10 kW  
Pullup  
EN  
EN  
I/O V  
I/O V  
CC  
L
N
Figure 1. Block Diagram (1 I/O Line)  
FUNCTION TABLE  
PIN ASSIGNMENT  
Pins  
Description  
Supply Voltage  
CC  
EN  
Operating Mode  
V
CC  
V
L
Hi−Z  
V
L
V Supply Voltage  
L
H
I/O Buses Connected  
GND  
EN  
Ground  
Output Enable, referenced to V  
L
I/O V  
n
I/O Port, referenced to V  
I/O Port, referenced to V  
CC  
CC  
L
I/O V n  
L
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Condition  
Unit  
V
V
High−side DC Supply Voltage  
Low−side DC Supply Voltage  
−referenced DC Input / Output Voltage  
−0.5 to +7.0  
−0.5 to +7.0  
−0.5 to +7.0  
−0.5 to +7.0  
−0.5 to +7.0  
50  
CC  
V
V
L
I/O V  
V
CC  
V
CC  
I/O V  
V −referenced DC Input / Output Voltage  
L
V
L
V
Enable Control Pin DC Input Voltage  
V
EN  
I/O_SC  
I
Short−Circuit Duration (I/O V and I/O V to GND)  
Continuous  
mA  
mA  
°C  
L
CC  
I
Input / Output Clamping Current (I/O V and I/O V  
)
−50  
V
I/O  
< 0  
I/OK  
L
CC  
T
STG  
Storage Temperature  
−65 to +150  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
www.onsemi.com  
2
NLSX0102  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
1.5  
Max  
5.5  
5.5  
5.5  
5.5  
10  
Unit  
V
V
CC  
High−side Positive DC Supply Voltage  
Low−side Positive DC Supply Voltage  
Enable Control Pin Voltage  
V
L
1.5  
V
V
EN  
GND  
GND  
V
V
IO  
I/O Pin Voltage  
V
Dt/DV  
Input Transition Rise and Fall Rate  
ns/V  
I/O V and I/O V Ports, Push−Pull Driving  
L
CC  
Control Input  
10  
T
A
Operating Temperature Range  
−40  
+85  
°C  
DC ELECTRICAL CHARACTERISTICS (T = −40 to +85 °C, unless otherwise specified)  
A
−40 5C to +855C  
Typ  
Test Conditions  
(Notes 1, 2)  
(Note 1)  
Min  
Max  
Symbol  
Parameter  
I/O V Input HIGH Voltage  
V
V
Unit  
L
CC  
V
IHC  
1.5 to  
5.5  
1.5 to  
5.5  
V
V
CC  
CC  
0.4  
V
ILC  
V
IHL  
I/O V Input LOW Voltage  
1.5 to  
5.5  
1.5 to  
5.5  
0.15  
V
V
CC  
I/O V Input HIGH Voltage  
1.5 to  
5.5  
1.5 to V – 0.4  
5.5  
L
L
V
I/O V Input LOW Voltage  
1.5 to  
5.5  
1.5 to  
5.5  
0.15  
V
ILL  
L
V
Control Pin Input HIGH Voltage  
Control Pin Input LOW Voltage  
1.5 to  
5.5  
1.5 to  
5.5  
0.65 *  
V
IH  
V
L
V
1.5 to  
5.5  
1.5 to  
5.5  
0.35 *  
V
IL  
V
L
V
OHC  
I/O V Output HIGH Voltage  
I/O V source  
current = −20 mA  
1.5 to  
5.5  
1.5 to  
5.5  
2/3 *  
V
CC  
CC  
V
CC  
V
I/O V Output LOW Voltage  
I/O V sink current = 1.5 to  
1.5 to  
5.5  
0.4  
V
OLC  
CC  
CC  
1 mA  
5.5  
V
OHL  
I/O V Output HIGH Voltage  
I/O V source current  
1.5 to  
5.5  
1.5 to  
5.5  
2/3 * V  
L
V
L
L
= −20 mA  
V
I/O V Output LOW Voltage  
I/O V sink current =  
1.5 to  
5.5  
1.5 to  
5.5  
0.4  
2.0  
V
OLL  
L
L
1 mA  
I
V Supply Current  
I/O V and I/O V  
L
1.5 to  
5.5  
1.5 to  
5.5  
mA  
QVL  
L
CC  
Supply Current  
unconnected, V  
=
EN  
V
L
5.5  
0
0
2.0  
−1.0  
2.0  
5.5  
I
V Supply Current  
Supply Current  
I/O V and I/O V  
unconnected,  
1.5 to  
5.5  
1.5 to  
5.5  
mA  
QVCC  
L
CC  
L
V
= V  
EN  
L
5.5  
0
0
2.0  
−1.0  
1.0  
5.5  
I
V
Tri−state Output Mode  
I/O V and I/O V  
1.5 to  
5.5  
1.5 to  
5.5  
mA  
mA  
TS−VCC  
CC  
CC  
L
unconnected,  
V
= GND  
EN  
I
V Tri−state Output Mode Supply  
I/O V and I/O V  
1.5 to  
5.5  
1.5 to  
5.5  
1.0  
TS−VL  
L
CC  
L
Current  
unconnected,  
V
EN  
= GND  
1. Typical values are for V = +3.3 V, V = +1.8 V and T = +25°C.  
CC  
L
A
2. All units are production tested at T = +25°C. Limits over the operating temperature range are guaranteed by design.  
A
www.onsemi.com  
3
NLSX0102  
DC ELECTRICAL CHARACTERISTICS (T = −40 to +85 °C, unless otherwise specified)  
A
−40 5C to +855C  
Typ  
Test Conditions  
(Notes 1, 2)  
Min  
Max  
(Note 1)  
Symbol  
Parameter  
V
L
V
CC  
Unit  
I
I
Enable Pin Input Leakage Current  
1.5 to  
5.5  
1.5 to  
5.5  
1.0  
mA  
I
I/O Tri−state Output Mode Leakage  
Current  
1.5 to  
5.5  
1.5 to  
5.5  
1.0  
mA  
kW  
OZ  
R
Pull−Up Resistors I/O V and V  
C
10  
PU  
L
1. Typical values are for V = +3.3 V, V = +1.8 V and T = +25°C.  
CC  
L
A
2. All units are production tested at T = +25°C. Limits over the operating temperature range are guaranteed by design.  
A
Timing Characteristics − Rail−to−Rail Driving Configuration  
(I/O test circuits of Figures 2, 3 and 7, C  
= 15 pF, driver output impedance 50 W, R  
= 1 MW, unless otherwise specified)  
LOAD  
LOAD  
−405C to +855C  
CC  
V
CC  
= 2.3 to 2.7 V  
V
= 3.0 to 3.6 V  
V
CC  
= 4.5 to 5.5 V  
Min  
Max  
Min  
Max  
Min  
Max  
Symbol  
V = 1.65 to 1.95 V  
Parameter  
Conditions  
Unit  
L
t
I/O V Rise Time  
Figure 8  
Figure 8  
Figure 8  
Figure 8  
Figure 2  
0.6  
9.5  
10.8  
9.7  
13.8  
5.6  
6.5  
4.8  
4.8  
50  
2.3  
12.5  
9.1  
8.1  
16.2  
7.1  
7.1  
5.3  
5.0  
40  
0.8  
7.6  
7.6  
13.3  
16.2  
6.8  
7.4  
2.0  
3.5  
35  
nS  
nS  
nS  
nS  
nS  
RVL  
L
t
t
I/O V Rise Time  
4.0  
2.0  
2.9  
2.7  
1.9  
2.8  
2.7  
1.7  
2.8  
RVCC  
CC  
t
I/O V Fall Time  
L
FVL  
I/O V Fall Time  
FVCC  
CC  
t
t
t
t
Propagation Delay  
PHL−VL−VCC  
PLH−VL−VCC  
PHL−VCC−VL  
PLH−VCC−VL  
(Driving I/O V , V to V )  
L
L
CC  
Propagation Delay  
(Driving I/O V , V to V )  
Figure 3  
nS  
CC  
CC  
L
t
Enable Time  
Disable Time  
Figure 7  
Figure 7  
nS  
nS  
EN  
t
316  
0.7  
225  
0.7  
215  
0.7  
DIS  
t
Part−to−Part Skew  
Maximum Data Rate  
nS  
PPSKEW  
MDR  
21  
22  
24  
Mbps  
V = 2.3 to 2.7 V  
L
t
I/O V Rise Time  
Figure 8  
Figure 8  
Figure 8  
Figure 8  
Figure 2  
2.8  
3.2  
1.9  
2.2  
7.7  
9.2  
8.3  
8.3  
3.2  
4.8  
2.5  
4.5  
50  
2.6  
2.9  
1.9  
2.4  
8.1  
8.8  
7.8  
8.0  
3.7  
5.3  
1.6  
4.3  
40  
1.8  
2.4  
1.8  
2.6  
10.3  
6.4  
7.4  
10.0  
3.9  
6.0  
1.0  
3.4  
35  
nS  
nS  
nS  
nS  
nS  
RVL  
L
t
t
I/O V Rise Time  
CC  
RVCC  
t
I/O V Fall Time  
L
FVL  
FVCC  
I/O V Fall Time  
CC  
t
t
t
t
Propagation Delay  
PHL−VL−VCC  
PLH−VL−VCC  
PHL−VCC−VL  
PLH−VCC−VL  
(Driving I/O V , V to V )  
L
L
CC  
Propagation Delay  
(Driving I/O V , V to V )  
Figure 3  
nS  
CC  
CC  
L
t
Enable Time  
Disable Time  
Figure 7  
Figure 7  
nS  
nS  
EN  
t
225  
0.7  
225  
0.7  
215  
0.7  
DIS  
t
Part−to−Part Skew  
Maximum Data Rate  
nS  
PPSKEW  
MDR  
20  
22  
24  
Mbps  
www.onsemi.com  
4
 
NLSX0102  
Timing Characteristics − Rail−to−Rail Driving Configuration  
(I/O test circuits of Figures 2, 3 and 7, C  
= 15 pF, driver output impedance 50 W, R  
= 1 MW, unless otherwise specified)  
LOAD  
LOAD  
−405C to +855C  
CC  
V
CC  
= 2.3 to 2.7 V  
V
= 3.0 to 3.6 V  
V
CC  
= 4.5 to 5.5 V  
Min  
Max  
Min  
Max  
Min  
Max  
Symbol  
V = 3.0 to 3.6 V  
Parameter  
Conditions  
Unit  
L
t
I/O V Rise Time  
Figure 8  
Figure 8  
Figure 8  
Figure 8  
Figure 2  
2.3  
6.5  
6.5  
7.2  
8.0  
2.4  
3.8  
2.5  
3.6  
40  
1.9  
8.0  
7.4  
5.9  
9.3  
3.1  
3.8  
2.6  
3.1  
35  
nS  
nS  
nS  
nS  
nS  
RVL  
L
t
I/O V Rise Time  
2.5  
2.0  
2.3  
2.1  
1.9  
2.4  
RVCC  
CC  
t
I/O V Fall Time  
L
FVL  
FVCC  
t
I/O V Fall Time  
CC  
t
t
t
t
Propagation Delay  
PHL−VL−VCC  
PLH−VL−VCC  
PHL−VCC−VL  
PLH−VCC−VL  
(Driving I/O V , V to V )  
L
L
CC  
Propagation Delay  
(Driving I/O V , V to V )  
Figure 3  
nS  
CC  
CC  
L
t
Enable Time  
Disable Time  
Figure 7  
Figure 7  
nS  
nS  
EN  
t
225  
0.7  
235  
0.7  
DIS  
t
Part−to−Part Skew  
Maximum Data Rate  
nS  
PPSKEW  
MDR  
23  
24  
Mbps  
Timing Characteristics – Open Drain Driving Configuration  
(I/O test circuits of Figures 4, 5 and 7, C  
= 15 pF, driver output impedance 50 W, R  
= 1 MW, unless otherwise specified)  
LOAD  
LOAD  
−405C to +855C  
CC  
V
CC  
= 2.3 to 2.7 V  
V
= 3.0 to 3.6 V  
V
CC  
= 4.5 to 5.5 V  
Min  
Max  
Min  
Max  
Min  
Max  
Symbol  
V = 1.65 to 1.95 V  
Parameter  
Conditions  
Unit  
L
t
I/O V Rise Time  
Figure 8  
Figure 8  
Figure 8  
Figure 8  
Figure 2  
38  
340  
330  
11.1  
11  
30  
245  
218  
12.0  
16.2  
20.0  
208  
22.0  
150  
70  
22.0  
10.0  
4.2  
134  
120  
14.2  
16.2  
23.0  
208  
22.0  
112  
35  
nS  
nS  
nS  
nS  
nS  
RVL  
L
t
t
I/O V Rise Time  
34  
4.4  
6.9  
2.3  
45  
23  
4.3  
7.5  
2.4  
36.0  
1.1  
36  
RVCC  
CC  
t
I/O V Fall Time  
L
FVL  
FVCC  
I/O V Fall Time  
7.0  
CC  
t
Propagation Delay  
27  
2.6  
PHLVL−VCC  
PLHVL−VCC  
(Driving I/O V , V to V )  
L
L
CC  
t
260  
22  
27.0  
1.2  
t
Propagation Delay  
(Driving I/O V , V to V )  
Figure 3  
1.9  
45.0  
nS  
PHLVCC−VL  
PLHVCC−VL  
CC  
CC  
L
t
200  
80  
27.0  
t
Enable Time  
Disable Time  
Figure 7  
Figure 7  
nS  
nS  
EN  
t
250  
0.7  
277  
0.7  
290  
0.7  
DIS  
t
Part−to−Part Skew  
Maximum Data Rate  
nS  
PPSKEW  
MDR  
2
2
2
Mbps  
www.onsemi.com  
5
NLSX0102  
Timing Characteristics – Open Drain Driving Configuration  
(I/O test circuits of Figures 4, 5 and 7, C  
= 15 pF, driver output impedance 50 W, R  
= 1 MW, unless otherwise specified)  
LOAD  
LOAD  
−405C to +855C  
CC  
V
CC  
= 2.3 to 2.7 V  
V
= 3.0 to 3.6 V  
V
CC  
= 4.5 to 5.5 V  
Min  
Max  
Min  
Max  
Min  
Max  
Symbol  
V = 2.3 to 2.7 V  
Parameter  
Conditions  
Unit  
L
t
I/O V Rise Time  
Figure 8  
Figure 8  
Figure 8  
Figure 8  
34  
400  
352  
6.9  
28.0  
24.0  
4.3  
300  
280  
6.2  
24.0  
12.0  
4.2  
208  
180  
7.8  
nS  
nS  
nS  
nS  
RVL  
L
t
I/O V Rise Time  
35.0  
4.4  
RVCC  
CC  
t
I/O V Fall Time  
L
FVL  
FVCC  
t
I/O V Fall Time  
4.3  
8.8  
4.9  
9.4  
5.4  
10.4  
14.0  
210  
13.0  
144  
35  
CC  
t
1.7  
14.0  
250  
13.0  
225  
50  
2.0  
14.0  
210  
13.0  
180  
40  
2.1  
PHLVL−VCC  
PLHVL−VCC  
Propagation Delay  
Figure 2  
Figure 3  
nS  
nS  
(Driving I/O V , V to V )  
L
L
CC  
t
43.0  
1.8  
36.0  
2.6  
27.0  
1.2  
t
PHLVCC−VL  
PLHVCC−VL  
Propagation Delay  
(Driving I/O V , V to V )  
CC  
CC  
L
t
44.0  
37.0  
27.0  
t
Enable Time  
Disable Time  
Figure 7  
Figure 7  
nS  
nS  
EN  
t
265  
0.7  
230  
0.7  
215  
0.7  
DIS  
t
Part−to−Part Skew  
Maximum Data Rate  
nS  
PPSKEW  
MDR  
2
2
2
Mbps  
V = 3.0 to 3.6 V  
L
t
I/O V Rise Time  
Figure 8  
Figure 8  
Figure 8  
Figure 8  
25.0  
26.0  
2.8  
400  
375  
6.1  
19.0  
14.0  
2.6  
278  
247  
5.7  
nS  
nS  
nS  
nS  
RVL  
L
t
t
I/O V Rise Time  
CC  
RVCC  
t
I/O V Fall Time  
L
FVL  
FVCC  
I/O V Fall Time  
2.6  
7.6  
3.1  
8.3  
CC  
t
1.3  
10.0  
255  
124  
185  
40  
1.4  
8.0  
PHLVL−VCC  
PLHVL−VCC  
Propagation Delay  
Figure 2  
Figure 3  
nS  
nS  
(Driving I/O V , V to V )  
L
L
CC  
t
36.0  
1.0  
28.0  
1.0  
243  
97.0  
136  
35  
t
PHLVCC−VL  
PLHVCC−VL  
Propagation Delay  
(Driving I/O V , V to V )  
CC  
CC  
L
t
3.0  
3.0  
t
Enable Time  
Disable Time  
Figure 7  
Figure 7  
nS  
nS  
EN  
t
250  
0.7  
205  
0.7  
DIS  
t
Part−to−Part Skew  
Maximum Data Rate  
nS  
PPSKEW  
MDR  
2
2
Mbps  
www.onsemi.com  
6
NLSX0102  
TEST SETUPS  
NLSX0102  
NLSX0102  
V
L
V
CC  
V
L
V
CC  
EN  
EN  
I/O V  
I/O V  
L
I/O V  
L
I/O V  
CC  
CC  
Source  
C
LOAD  
C
LOAD  
Source  
R
R
LOAD  
LOAD  
Figure 2. Rail−to−Rail Driving I/O VL  
Figure 3. Rail−to−Rail Driving I/O VCC  
NLSX0102  
NLSX0102  
V
L
V
L
V
CC  
V
CC  
EN  
EN  
I/O V  
CC  
I/O V  
L
I/O V  
CC  
V
CC  
C
LOAD  
C
LOAD  
R
R
LOAD  
LOAD  
Figure 4. Open−Drain Driving I/O VL  
Figure 5. Open−Drain Driving I/O VCC  
t
v
I/O V  
t
v 3 ns  
RISE/FALL  
I/O V  
CC  
RISE/FALL  
L
3 ns  
90%  
50%  
10%  
90%  
50%  
10%  
t
L
t
t
t
PD_VCC−VL  
PD_VCC−VL  
PD_VL−VCC  
PD_VL−  
I/O V  
I/O V  
CC  
VCC  
90%  
50%  
10%  
90%  
50%  
10%  
t
t
R−VCC  
t
t
R−VL  
F−VCC  
F−VL  
Figure 6. Definition of Timing Specification Parameters  
www.onsemi.com  
7
NLSX0102  
V
L
V
CC  
2 x V*  
OPEN  
R
1
PULSE  
GENERATOR  
DUT  
R
T
C
R
L
L
V* = V or V  
L
CC  
Test  
Switch  
t
t
, t  
Open  
2 x V*  
PZH PHZ  
, t  
PZL PLZ  
C = 15 pF or equivalent (Includes jig and probe capacitance)  
L
R = R = 50 kW or equivalent  
L
1
R = Z  
of pulse generator (typically 50 W)  
T
OUT  
V* = V or V for I/O_VL or I/O_VCC measurements,  
L
CC  
respectively.  
Figure 7. Test Circuit for Enable/Disable Time Measurement  
t
t
F
V
R
L
50%  
EN  
V
CC  
90%  
50%  
10%  
Input  
GND  
GND  
t
t
PLZ  
PZL  
t
t
PHL  
PLH  
HIGH  
90%  
50%  
IMPEDANCE  
50%  
Output  
Output  
10%  
90%  
V
OL  
10%  
t
t
PHZ  
PZH  
t
t
F
V
OH  
R
50%  
Output  
HIGH  
IMPEDANCE  
Figure 8. Timing Definitions for Propagation Delays and Enable/Disable Measurement  
www.onsemi.com  
8
NLSX0102  
APPLICATIONS INFORMATION  
Level Translator Architecture  
of the device that is connected to the translator. The timing  
parameters listed in the data sheet assume that the output  
impedance of the drivers connected to the translator is less  
than 50 kW.  
The NLSX0102 auto sense translator provides  
bi−directional voltage level shifting to transfer data in  
multiple supply voltage systems. This device has two supply  
voltages, VL and VCC, which set the logic levels on the input  
and output sides of the translator. When used to transfer data  
from the VL to the VCC ports, input signals referenced to the  
VL supply are translated to output signals with a logic level  
matched to VCC. In a similar manner, the VCC to VL  
translation shifts input signals with a logic level compatible  
to VCC to an output signal matched to VL.  
The NLSX0102 consists of two bi−directional channels  
that independently determine the direction of the data flow  
without requiring a directional pin. The one−shot circuits are  
used to detect the rising or falling input signals. In addition,  
the one shots decrease the rise and fall time of the output  
signal for high−to−low and low−to−high transitions. Each  
input/output channel has an internal 10 kW pull−up. The  
magnitude of the pull−up resistors can be reduced by  
connecting external resistors in parallel to the internal 10 kW  
resistors.  
Enable Input (EN)  
The NLSX0102 has an Enable pin (EN) that provides  
tri−state operation at the I/O pins. Driving the Enable pin to  
a low logic level minimizes the power consumption of the  
device and drives the I/O VCC and I/O VL pins to a high  
impedance state. Normal translation operation occurs when  
the EN pin is equal to a logic high signal. The EN pin is  
referenced to the VL supply and has Overvoltage Tolerant  
(OVT) protection.  
Power Supply Guidelines  
During normal operation, supply voltage VL can be  
greater than, less than or equal to VCC. The sequencing of the  
power supplies will not damage the device during the power  
up operation. For optimal performance, 0.01 mF to 0.1 mF  
decoupling capacitors should be used on the VL and VCC  
power supply pins. Ceramic capacitors are a good design  
choice to filter and bypass any noise signals on the voltage  
lines to the ground plane of the PCB. The noise immunity  
will be maximized by placing the capacitors as close as  
possible to the supply and ground pins, along with  
minimizing the PCB connection traces.  
Input Driver Requirements  
The rise (tR) and fall (tF) timing parameters of the open  
drain outputs depend on the magnitude of the pull−up  
resistors. In addition, the propagation times (tPD), skew  
(tPSKEW) and maximum data rate depend on the impedance  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NLSX0102FCT1G  
Flip−Chip 8  
(Pb−Free)  
3000 / Tape & Reel  
NLSX0102FCT2G  
NLSX0102FC2T2G  
Flip−Chip 8  
(Pb−Free)  
3000 / Tape & Reel  
(4mm Pitch Carrier Tape)  
Flip−Chip 8  
(Pb−Free)  
3000 / Tape & Reel  
(2mm Pitch Carrier Tape)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
9
NLSX0102  
PACKAGE DIMENSIONS  
8 PIN FLIP−CHIP, 0.9x1.9, 0.5P  
CASE 499BF  
ISSUE O  
B
E
A
D
NOTES:  
PIN A1  
REFERENCE  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. COPLANARITY APPLIES TO SPHERICAL  
CROWNS OF SOLDER BALLS.  
MILLIMETERS  
DIM MIN  
MAX  
0.50  
0.19  
0.25  
A
A1  
b
0.44  
0.15  
0.21  
TOP VIEW  
0.90 BSC  
1.90 BSC  
D
E
A1  
e
0.50 BSC  
0.10  
C
A
8X  
0.05  
C
SOLDERING FOOTPRINT*  
SEATING  
PLANE  
NOTE 3  
C
SIDE VIEW  
0.50 PITCH  
A1  
0.50 PITCH  
e
e/2  
8X  
0.25  
D
C
8X  
b
e
0.05  
0.03  
C
C
A B  
PACKAGE  
OUTLINE  
B
A
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
e/2  
1
2
BOTTOM VIEW  
ON Semiconductor and  
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
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NLSX0102/D  

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