NLV68SZ126 [ONSEMI]
Non-Inverting 3-State Buffer;
| 型号： | NLV68SZ126 |
| 厂家： | 
ONSEMI |
| 描述： | Non-Inverting 3-State Buffer |
| 文件： | 总10页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
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Non-Inverting 3-State Buffer
NLV68SZ126
The NLV68SZ126 is 6−channel non−inverting 3−state buffer in
a tiny footprint package.
Features
www.onsemi.com
• Designed for 1.65 V to 5.5 V V Operation
CC
• 3.4 ns t at 5 V (Typ)
PD
MARKING
DIAGRAMS
• Inputs/Outputs Over−Voltage Tolerant up to 5.5 V
• I
Supports Partial Power Down Protection
• Source/Sink 24 mA at 3.0 V
OFF
XXXX
ALYWG
G
QFN20, 2.5X3.5, 0.4P
CASE 485CB
• Available in 2.5 mm x 3.5 mm QFN20 and TSSOP−20 WB Packages
1
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
20
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
TSSOP−20 WB
DT SUFFIX
XXXX
ALYWG
G
CASE 948E
OEn
1
Yn
XXXX
= Specific Device Code
An
A
L
Y
W
G
= Assembly Location
= Wafer Lot Number
= Year
= Work Week
= Pb−Free Package
n = 1 to 6
Figure 1. Logic Diagram
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
OE
A
EN
Y
Figure 2. Channel Logic Symbol
FUNCTION TABLE
Input
Output
OEn
An
X
Yn
Z
L
H
H
L
L
H
H
X = Don’t Care
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
April, 2021 − Rev. 0
NLV68SZ126/D
NLV68SZ126
OE1 VCC
OE1
OE2
A1
1
2
3
V
CC
20
19
18
17
16
15
14
13
12
11
1
20
2
3
4
5
6
7
8
9
19
18
17
16
15
14
13
12
OE2
A1
OE3
Y1
OE3
Y1
A2
4
5
Y2
A2
Y2
A3
Y3
A3
Y3
A4
6
Y4
A4
Y4
7
A5
Y5
A5
Y5
A6
8
Y6
A6
Y6
9
OE4
GND
OE5
OE6
OE4
OE5
10
11
10
GND OE6
Figure 3. QFN Pinout (Top Through View)
Figure 4. TSSOP Pinout (Top View)
PIN ASSIGNMENT
Number
Name
OE1
OE2
A1
Type
Input
Description
Channel 1 Control Input
Channel 2 Control Input
Channel 1 Data Input
Channel 2 Data Input
Channel 3 Data Input
Channel 4 Data Input
Channel 5 Data Input
Channel 6 Data Input
Channel 4 Control Input
Ground
1
2
Input
3
Input
4
A2
Input
5
A3
Input
6
A4
Input
7
A5
Input
8
A6
Input
9
OE4
GND
OE6
OE5
Y6
Input
10
11
12
13
14
15
16
17
18
19
20
Power
Input
Channel 6 Control Input
Channel 5 Control Input
Channel 6 Data Output
Channel 5 Data Output
Channel 4 Data Output
Channel 3 Data Ouput
Channel 2 Data Output
Channel 1 Data Output
Channel 3 Control Input
Positive Supply
Input
Output
Output
Output
Output
Output
Output
Input
Y5
Y4
Y3
Y2
Y1
OE3
V
CC
Power
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2
NLV68SZ126
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
V
CC
DC Supply
−0.5 to +6.5
−0.5 to +6.5
V
DC Input Voltage
DC Output Voltage
V
IN
V
OUT
V
Active−Mode (High or Low State)
Tri−State Mode (Note 1)
Power−Down Mode (V = 0 V)
−0.5 to V + 0.5
CC
−0.5 to +6.5
−0.5 to +6.5
CC
I
DC Input Diode Current, V < GND
−50
−50
mA
mA
mA
mA
°C
IK
IN
I
DC Output Diode Current, V
< GND
OK
OUT
I
DC Output Source/Sink Current
50
OUT
I
or I
GND
STG
DC Supply Current Per Supply Pin or Ground Pin
Storage Temperature Range
100
CC
T
−65 to +150
260
T
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
°C
L
T
+150
°C
J
MSL
Level 1
F
R
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage (Note 2)
Human Body Model
Charged Device Model
V
2000
2000
I
Latchup Performance (Note 3)
100
mA
LATCHUP
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Applicable to devices with outputs that may be tri−stated.
2. HBM tested to EIA/JESD22−A114−A. CDM tested to JESD22−C101−A. JEDEC recommends that ESD qualification to EIA/JESD22−A115A
(Machine Model) be discontinued.
3. Tested to EIA/JESD78 Class II.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
1.65
0
Max
5.5
Unit
V
V
CC
Positive DC Supply Voltage
Digital Input Voltage
Output Voltage
V
IN
5.5
V
V
OUT
V
Active Mode (High or Low State)
0
0
0
V
CC
5.5
5.5
Tri−State Mode (Note 4)
Power Down Mode (V = 0 V)
CC
T
A
Operating Free−Air Temperature
−55
+125
°C
t , t
Input Transition Rise or Fall Rate
nS/V
r
f
V
CC
V
CC
V
CC
V
CC
= 1.65 V to 1.95 V
= 2.3 V to 2.7 V
= 3.0 V to 3.6 V
= 4.5 V to 5.5 V
0
0
0
0
20
20
10
5
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
4. Applicable to devices with outputs that may be tri−stated.
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3
NLV68SZ126
DC ELECTRICAL CHARACTERISTICS
T
A
= 255C
T
A
= −555C to +1255C
Min
1.65 to 1.95 0.65 × V
Typ
Max
−
Min
Max
Symbol
Parameter
Conditions
V
CC
(V)
Unit
V
IH
High−Level Input
Voltage
−
0.65 × V
CC
−
V
CC
CC
2.3 to 5.5
1.65 to 1.95
2.3 to 5.5
0.70 × V
−
−
−
−
−
−
V
IL
Low−Level Input
Voltage
−
−
−
0.35 × V
0.30 × V
0.35 × V
0.30 × V
V
V
CC
CC
−
CC
CC
V
OH
High−Level
Output Voltage
V
= V or V
IN IH IL
I
I
I
I
I
I
I
= −100 mA
= −4 mA
= −8 mA
= −12 mA
= −16 mA
= −24 mA
= −32 mA
1.65 to 5.5
1.65
2.3
V
CC
– 0.1
V
CC
−
−
−
−
−
−
−
V – 0.1
CC
1.29
−
−
−
−
−
−
−
OH
OH
OH
OH
OH
OH
OH
1.29
1.4
2.1
2.4
2.7
2.5
4.0
1.9
2.2
2.4
2.3
3.8
1.9
2.2
2.4
2.3
3.8
2.7
3.0
3.0
4.5
V
OL
Low−Level
Output Voltage
V
= V or V
IL
V
IN
IH
I
I
I
I
I
I
I
= 100 mA
= 4 mA
1.65 to 5.5
1.65
2.3
−
−
−
−
−
−
−
−
0.08
0.2
0.22
0.28
0.38
0.42
0.1
0.24
0.3
−
−
−
−
−
−
−
0.1
0.24
0.3
OL
OL
OL
OL
OL
OL
OL
= 8 mA
= 12 mA
= 16 mA
= 24 mA
= 32 mA
2.7
0.4
0.4
3.0
0.4
0.55
0.55
0.4
0.55
0.55
3.0
4.5
I
Input Leakage
Current
V
V
= 5.5 V or GND
1.65 to 5.5
−
−
−
−
−
−
−
−
1.0
1.0
1.0
5.0
−
−
−
−
10.0
10.0
10
mA
mA
mA
mA
IN
IN
I
3−State Output
Leakage Current
= 0 V to 5.5 V
1.65 to 5.5
OZ
OUT
I
Power Off
Leakage Current
V
V
= 5.5 V or
= 5.5 V
0
OFF
IN
OUT
I
Quiescent Supply
Current
V
IN
= V or GND
5.5
50
CC
CC
AC ELECTRICAL CHARACTERISTICS
T
A
= 255C
Typ
13.0
6.9
T
A
= −555C to +1255C
Min
−
Max
21.0
10
Min
Max
22.0
11.0
7.5
Symbol
Parameter
Conditions
V
(V)
Unit
CC
t
, t
Propagation
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
R
L
R
L
R
L
R
L
R
L
R
L
= 1 MW, C = 15 pF
PLH PHL
L
Delay,
A to Y
= 1 MW, C = 15 pF
−
L
(Figures 5 and 6)
= 1 MW, C = 15 pF
−
4.8
6.5
L
= 500 W, C = 50 pF
−
5.3
7.0
8.0
L
4.5 to 5.5
−
3.4
4.5
4.8
= 1 MW, C = 15 pF
L
= 500 W, C = 50 pF
−
3.8
5.0
5.3
L
t
t
, t
Output Enable Time,
OE to Y
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
4.5 to 5.5
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
4.5 to 5.5
−
12.4
6.7
23.0
10.5
7.0
24.0
12.0
8.5
ns
ns
PZH PZL
−
(Figures 5 and 6)
−
4.6
−
3.3
5.5
5.8
, t
Output Disable
Time,
OE to Y
(Figures 5 and 6)
−
9.0
14.5
8.0
15.0
8.5
PHZ PLZ
−
5.2
−
4.2
7.0
7.5
−
2.8
5.5
6.0
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4
NLV68SZ126
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Input Capacitance
Test Conditions
Typical (T = 255C)
Unit
pF
A
C
V
V
= 5.5 V, V = 0 V or V
2.5
2.5
9
IN
CC
IN
CC
CC
C
Output Capacitance
= 5.5 V, V = 0 V or V
pF
OUT
CC
IN
C
Power Dissipation Capacitance
(Note 5)
10 MHz, V = 3.3 V, V = 0 V or V
pF
PD
CC
IN
CC
10 MHz, V = 5.5 V, V = 0 V or V
11
CC
IN
CC
5. C is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
PD
load. Average operating current can be obtained by the equation I
= C × V × f + I . C is used to determine the no−load
CC(OPR)
PD CC in CC PD
2
dynamic power consumption: P = C × V
× f + I × V
.
D
PD
CC
in
CC
CC
OPEN
Switch
Position
Test
/t
C (pF)
L
R
(W)
R (W)
1
2 x V
GND
CC
L
t
Open
See AC Characteristics Table
PLH PHL
R
1
L
t
/t
2 × V
50
50
500
500
500
500
PLZ PZL
CC
INPUT
t
/t
GND
DUT
OUTPUT
PHZ PZH
R
R
T
C *
L
C includes probe and jig capacitance
L
R is Z
of pulse generator (typically 50 W)
T
OUT
f = 1 MHz
Figure 5. Test Circuit
V
CC
t = 3 ns
r
t = 3 ns
f
V
CC
90%
90%
INPUT
V
mi
V
mi
V
mi
V
mi
INPUT
GND
~V
10%
10%
GND
t
t
PLZ
PZL
t
t
PLH
PHL
CC
V
OH
V
V
OUTPUT
OUTPUT
mo
V
V
V
OUTPUT
OUTPUT
mo
mo
V
+ V
OL
OL
Y
V
V
V
OL
t
t
PHZ
PZH
t
t
PLH
PHL
V
OH
OH
V
− V
OH
Y
V
mo
mo
mo
V
OL
~0 V
Figure 6. Switching Waveforms
V
CC
(V)
V
mi
(V)
V
mo
(V)
V (V)
Y
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
4.5 to 5.5
V
/2
/2
/2
/2
V
/2
/2
/2
/2
0.15
0.15
0.3
CC
CC
CC
CC
CC
CC
CC
CC
V
V
V
V
V
V
0.3
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5
NLV68SZ126
ORDERING INFORMATION
Pin 1 Orientation
(See below)
†
Device
Package
Marking
Shipping
NLV68SZ126MN2TWG
QFN20, 2.5 x 3.5, 0.4P
Z126
TBD
Q1
Q1
3000 / Tape & Reel
2500 / Tape & Reel
NLV68SZ126DTR2G
(Contact ON Semiconductor)
TSSOP−20
†For complete information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
Pin 1 Orientation in Tape and Reel
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6
NLV68SZ126
PACKAGE DIMENSIONS
TSSOP−20 WB
CASE 948E
ISSUE D
NOTES:
20X K REF
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
K
K1
M
S
S
V
0.10 (0.004)
T U
S
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
0.15 (0.006) T U
J J1
20
11
2X L/2
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION
SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
B
SECTION N−N
L
−U−
PIN 1
IDENT
0.25 (0.010)
N
1
10
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
M
S
0.15 (0.006) T U
A
−V−
N
MILLIMETERS
INCHES
MIN
DIM MIN
MAX
6.60
4.50
1.20
0.15
0.75
MAX
0.260
0.177
0.047
0.006
0.030
F
A
B
6.40
4.30
---
0.252
0.169
---
DETAIL E
C
D
0.05
0.50
0.002
0.020
F
G
H
0.65 BSC
0.026 BSC
−W−
0.27
0.09
0.09
0.19
0.19
0.37
0.20
0.16
0.30
0.25
0.011
0.004
0.004
0.007
0.007
0.015
0.008
0.006
0.012
0.010
C
J
J1
K
G
D
H
K1
L
DETAIL E
6.40 BSC
0.252 BSC
0
0.100 (0.004)
−T− SEATING
M
0
8
8
_
_
_
_
PLANE
SOLDERING FOOTPRINT
7.06
1
0.65
PITCH
01.36X6
16X
1.26
DIMENSIONS: MILLIMETERS
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7
NLV68SZ126
PACKAGE DIMENSIONS
QFN20, 2.5x3.5, 0.4P
CASE 485CB
ISSUE O
NOTES:
A
B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
L
L
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 MM FROM TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
PIN ONE
REFERENCE
L1
DETAIL A
ALTERNATE TERMINAL
CONSTRUCTIONS
MILLIMETERS
DIM MIN
MAX
1.00
0.05
E
A
A
A1
A3
b
0.80
0.00
0.20 REF
EXPOSED Cu
MOLD CMPD
0.15
0.25
0.15
C
2X
D
2.50 BSC
D2
E
0.90
1.10
3.50 BSC
2X
0.15
C
E2
e
2.00
2.20
TOP VIEW
DETAIL B
0.40 BSC
ALTERNATE
L
0.35
---
0.45
0.15
CONSTRUCTIONS
L1
DETAIL B
(A3)
A1
0.10
0.08
C
C
NOTE 4
SEATING
PLANE
C
SIDE VIEW
D2
SOLDERING FOOTPRINT*
0.10 C A B
3.80
2.24
20X
L
PACKAGE
OUTLINE
9
12
0.10 C A B
DETAIL A
20X
0.63
2.80 1.14
E2
1
20X
b
0.10 C A B
2
20X
0.25
0.40
PITCH
19
1
0.05
C
NOTE 3
e
DIMENSIONS: MILLIMETERS
e/2
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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8
NLV68SZ126
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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