NOA1212_15 [ONSEMI]
Ambient Light Sensor;
| 型号： | NOA1212_15 |
| 厂家： | 
ONSEMI |
| 描述： | Ambient Light Sensor |
| 文件： | 总8页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NOA1212
Ambient Light Sensor with
Dark Current Compensation
Description
The NOA1212 is a very low power ambient light sensor (ALS) with
an analog current output and a power down mode to conserve power.
Designed primarily for handheld device applications, the active power
dissipation of this chip is less than 8 mA at dark and its quiescent
current consumption is less than 200 pA in power down mode. The
device can operate over a very wide range of voltages from 2 V to
5.5 V. The NOA1212 employs proprietary CMOS image sensing
technology from ON Semiconductor, including built−in dynamic dark
current compensation to provide large signal to noise ratio (SNR) and
wide dynamic range (DR) over the entire operating temperature range.
The photopic optical filter provides a light response similar to that of
the human eye. Together the photopic light response and dark current
compensation insures accurate light level detection.
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1
CUDFN6
CU SUFFIX
CASE 505AL
PIN ASSIGNMENT
Features
• Senses Ambient Light and Provides an Output Current Proportional
to the Ambient Light Intensity
VDD
VSS
GB1
1
2
3
6
IOUT
NC
• Photopic Spectral Response
5
4
• Dynamic Dark Current Compensation
• Three Selectable Output Current Gain Modes in Approximately 10x
GB2
Steps
• Power Down Mode
• Less than 18 mA at 100 lux Active Power Consumption in Medium
Gain Mode (Less than 8 mA at Dark)
(Top View)
ORDERING INFORMATION
• Less than 200 pA Quiescent Power Dissipation in Power Down
Mode at All Light Levels
†
Device
NOA1212CUTAG*
Package
Shipping
2500 /
Tape & Reel
• Linear Response Over the Full Operating Range
• Senses Intensity of Ambient Light from ~0 lux to Over 100,000 lux
CUDFN6
(Pb−Free)
• Wide Operating Voltage Range (2 V to 5.5 V)
• Wide Operating Temperature Range (−40°C to 85°C)
• Drop−in Replacement Device in 1.6 x 1.6 mm Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Temperature Range: −40°C to 85°C.
Applications
Vin = 2 to 5.5V
• Saves display power in applications such as:
GS2 GS1
C1
♦ Cell Phones, PDAs, MP3 players, GPS
1μ
VDD
GB2 GB1
n
h
♦ Cameras, Video Recorders
♦ Mobile Devices with Displays or Backlit Keypads
♦ Laptops, Notebooks, Digital Signage
Photo
Diode
Amp
ADC
IOUT
♦ LCD TVs and Monitors, Digital Picture Frames
♦ Automobile Dashboard Displays and Infotainment
♦ LED Indoor/Outdoor Residential and Street Lights
RL
CL
IC2
VSS
NOA1212
IC1
Figure 1. Typical Application Circuit
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
November, 2015 − Rev. 3
NOA1212/D
NOA1212
GS2 GS1
GB2 GB1
VOUT
Amp
IOUT
n
h
RL
Photo
Diode
Reference
Diode
Figure 2. Simplified Block Diagram
Table 1. PIN FUNCTION DESCRIPTION
Pin
1
Pin Name
VDD
VSS
Description
Power pin.
Ground pin.
2
3
GB1
In conjunction with GB2, selects between three gain modes and power down.
In conjunction with GB1, selects between three gain modes and power down.
Not connected. This may be connected to ground or left floating.
Analog current output.
4
GB2
5
NC
6
IOUT
VSS
EP
Exposed pad, internally connected to ground. Should be connected to ground.
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
Input power supply
V
DD
6
Input voltage range
V
IN
−0.3 to V + 0.3
V
DD
Output voltage range
V
OUT
−0.3 to V + 0.2
V
DD
Output current range
I
0 to 15
−40 to 85
−40 to 85
2
mA
°C
°C
kV
V
o
Maximum Junction Temperature
Storage Temperature
T
J(max)
T
STG
ESD Capability, Human Body Model (Note 1)
ESD Capability, Charged Device Model (Note 1)
ESD Capability, Machine Model (Note 1)
Moisture Sensitivity Level
ESD
ESD
HBM
CDM
750
ESD
150
V
MM
MSL
3
−
Lead Temperature Soldering (Note 2)
T
SLD
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This device incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114
ESD Charged Device Model tested per ESD−STM5.3.1−1999
ESD Machine Model tested per EIA/JESD22−A115
Latchup Current Maximum Rating: v 100 mA per JEDEC standard: JESD78
2. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D
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2
NOA1212
Table 3. ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply over VDD = 5.5 V, −40°C < T < 85°C)
A
Rating
Test Conditions
Symbol
Min
2
Typ
3.0
8
Max
5.5
12
Unit
V
Power supply voltage
Power supply current
Power supply current
Power down current
V
DD
V
V
= 3.0 V, Ev = 0 lux, H−Gain
= 3.0 V, Ev = 100 lux, H−Gain
I
6
mA
mA
nA
mA
nA
nm
DD
DD_0
I
32
64
96
DD
DD_100
All light levels
I
0.2
51
5
DD_PD
Output current, high−gain
Dark output current, high−gain
Ev = 100 lux, White LED
I
41
61.5
o_high
o_dark
V
DD
= 3.0 V, Ev = 0 lux
I
10
Wavelength of maximum
response
l
m
540
White LED/fluorescent current
ratio
Ev = 100 lux
Ev = 100 lux
r
1.0
LE
Incandescent/fluorescent
current ratio
r
1.45
IF
Maximum output voltage
Power down time
Ev = 100 lux, R = 220 kW, H−Gain
V
V
–0.4
V
DD
–0.1
V
DD
V
ms
ms
V
L
OMAX
DD
Ev = 100 lux, H−Gain to PD
Ev = 100 lux, PD to H−Gain
t
1.5
PD
Wake up time
t
wu
300
Low level input voltage
High level input voltage
V
IL
−0.2
0.25 V
DD
V
IH
0.75 V
−40
V +0.2
DD
V
DD
Operating free−air temperature
range
T
A
85
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NOA1212
TYPICAL CHARACTERISTICS
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
ALS
Human Eye
Fluorescent
(5000K)
White LED
(5600K)
Fluorescent
(2700K)
Incandescent
(2850K)
200 300
400
500
600
700
800
900 1000
0
0.5
1
1.5
2
WAVELENGTH (nm)
Ratio
Figure 3. Spectral Response (Normalized)
Figure 4. Light Source Dependency
(Normalized to Fluorescent Light)
10000
1000
100
10000
1000
100
10
V
DD
= 3.3 V
No Load
1 kW Load
10 kW Load
100 kW Load
10
1
0.1
0.01
0.001
0.0001
0.00001
High Gain
Medium Gain
Low Gain
V
DD
= 3.3 V
1
0.01 0.1
1
10
100 1000 10000100000 1000000
Ev (lux)
1
10
100
1000
Ev (lux)
10000 100000
Figure 5. Output Current vs. Ev
Figure 6. Output Current vs. Ev
(High Gain Mode)
600
60
50
40
30
20
White LED (5600K)
White LED (5600K)
500
400
300
200
100
0
10
0
0
200
400
600
Ev (lux)
800
1000
0
20
40
60
80
100
Ev (lux)
Figure 7. Output Current vs. Ev, 0−1000 lux
(High Gain Mode)
Figure 8. Output Current vs. Ev, 0−100 lux
(High Gain Mode)
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NOA1212
TYPICAL CHARACTERISTICS
0
0
−10
1.0
10
−10
1.0
10
−20
20
−20
20
−30
−40
30
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
−30
30
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
40
−40
40
−50
−60
50
−50
−60
−70
−80
50
60
70
80
60
70
80
−70
−80
−90
90
−90
90
−100
100
−100
100
Q
−110
−120
−130
−140
110
120
130
140
Q
−110
110
120
130
140
SIDE VIEW
END VIEW
−120
o
−90
90o
o
−90
90o
−130
−140
−150
1
2
3
6
−150
150
5
4
−160
160
−170
170
150
180
−160
160
TOP VIEW
−170
170
TOP VIEW
180
Figure 9. Output Current vs. Angle
(End View, Normalized)
Figure 10. Output Current vs. Angle
(Side View, Normalized)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.0
2.5
2.0
1.5
1.0
V
= 3.3 V
DD
V
DD
= 3.3 V
High Gain Mode
Medium Gain Mode
Low Gain Mode
0.5
0.0
−60 −40
−20
0
20
40
60
80
100
−60 −40
−20
0
20
40
60
80
100
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 11. Output Current at 0 lux vs.
Temperature (High Gain Mode)
Figure 12. Output Current at 100 lux vs.
Temperature
10
9
8
7
6
5
4
3
2
1
0
100
90
80
70
60
50
40
30
20
10
0
V
= 3.3 V
V
= 3.3 V
DD
DD
−60 −40
−20
0
20
40
60
80
100
−60 −40
−20
0
20
40
60
80
100
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 13. Supply Current at 0 lux vs.
Temperature (High Gain Mode)
Figure 14. Supply Current at 100 lux vs.
Temperature (High Gain Mode)
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NOA1212
TYPICAL CHARACTERISTICS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
800
White LED (5600K)
700
600
500
400
300
200
100
0
0.2
0.0
0
1
2
3
4
5
6
0
200
400
600
800
1000
V
DD
(V)
Lux (Ev)
Figure 15. Output Current at 100 lux vs. Supply
Voltage (High Gain Mode)
Figure 16. Supply Current vs. Ev
(High Gain Mode)
80
70
60
50
40
30
20
10
0
0
1
2
3
4
5
6
V
DD
(V)
Figure 17. Supply Current vs. Supply Voltage
(High Gain Mode)
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NOA1212
DESCRIPTION OF OPERATION
Ambient Light Sensor Architecture
transmits photons in the visible spectrum which are
primarily detected by the human eye and exhibits excellent
IR rejection. The photo response of this sensor is as shown
in Figure 3.
The ambient light signal detected by the photo diode is
converted to an analog output current by an amplifier with
programmable gain. Table 4 shows the gain setting and the
corresponding light sensitivity.
The NOA1212 employs a sensitive photo diode fabricated
in ON Semiconductor’s standard CMOS process
technology. The major components of this sensor are as
shown in Figure 2 . The photons which are to be detected
pass through an ON Semiconductor proprietary color filter
limiting extraneous photons and thus performing as a band
pass filter on the incident wave front. The filter only
Table 4. PROGRAMMABLE GAIN SETTINGS
Approximate Output
Approximate Output
Current @ 100 lux
Current @ 1000 lux
GB2
GB1
Mode
Saturation
−
0
0
1
1
0
1
0
1
Power Down
High Gain
−
−
51 mA
4.9 mA
0.54 mA
510 mA
49 mA
5.4 mA
~10,000 lux
~100,000 lux
> 100,000 lux
Medium Gain
Low Gain
Power Down Mode
maximum desired E as shown in Equation 3. Equation 4
V
This device can be placed in a power down mode by
setting GB1 and GB2 to logic low level.
In order for proper operation of this mode GB1 and GB2
should stay low 1.5 ms.
computes the value for R (High−Gain mode).
L
ǒ
Ǔ
(eq. 3)
(eq. 4)
VOMAX + 51 mAń100 lux * EVMAX * RL
ǒ
Ǔ
ǒ
Ǔ
RL + VDD * 0.4 V ńEVMAX * 100 luxń51 mA
For example, consider a 5 V supply with a desired E
External Component Selection
VMAX
= 1000 lux, the value of R would be 8.85 kW. The value for
The NOA1212 outputs a current in direct response to the
incident illumination. In many applications it is desirable to
convert the output current into voltage. It may also be
desirable to filter the effects of 50/60 Hz flicker or other light
source transients.
L
R
L
can easily be computed for different NOA1212 gain
ranges by substituting the appropriate output current at
100 lux from Table 4.
The optional capacitor C can be used to form a low−pass
L
filter to remove 50/60 Hz filter or other unwanted noise
sources as computed with Equation 5.
Conversion from current to voltage may be accomplished
by adding load resistor R to the output. The value of R is
L
L
bounded on the high side by the potential output saturation
CL + 1ń2pfcRL
(eq. 5)
of the amplifier at high ambient light levels. R is bounded
L
For our example, to filter out 60Hz flicker the value of C
L
on the low side by the output current limiting of the internal
amplifier and to minimize power consumption.
Equation 1 describes the relationship of light input to
current output for the High−Gain mode.
would be 300 nF.
Power Supply Bypassing and Printed Circuit Board
Design
Power supply bypass and decoupling can typically be
handled with a low cost 0.1 mF to 1.0 mF capacitor.
The exposed pad on the bottom of the package is internally
connected to VSS pin 2 and should be soldered to the printed
circuit board.
ǒ
Ǔ
(eq. 1)
IOUT + 51 mAń100 lux * EV
By adding R to the output, I
voltage according to Equation 2.
is converted into a
L
OUT
ǒ
Ǔ
(eq. 2)
VOUT + IOUT * RL + 51 mAń100 lux * EV * RL
The range of the output voltage is limited by the output
stage to the V parameter value of V – 0.4 V at the
OMAX
DD
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NOA1212
PACKAGE DIMENSIONS
CUDFN6, 1.6x1.6, 0.5P
CASE 505AL
ISSUE O
NOTES:
B
E
A
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.10 AND 0.20MM FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
PIN 1
2X
0.10 C
MILLIMETERS
DIM MIN
MAX
0.65
0.05
2X
0.10
C
A
A1
A3
b
0.55
0.00
0.20 REF
TOP VIEW
A
0.15
0.25
0.10 C
b2
D
D2
E
E2
e
L
0.15 REF
1.60 BSC
1.05 1.15
1.60 BSC
0.45 0.55
0.50 BSC
0.25 0.35
0.17 REF
A3
C
0.08
C
SEATING
PLANE
A1
NOTE 4
SIDE VIEW
L2
M
RECOMMENDED
0.10
C A B
L2
MOUNTING FOOTPRINT*
D2
6X L
PIN ONE
REFERENCE
1
3
4
6X
1.70
0.48
M
0.10
C A B
E2
b2
6
6X
b
0.75
1.90
0.10
C
C
A
B
e
0.05
NOTE 3
1
BOTTOM VIEW
6X
0.28
0.50
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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