NP3500SAT3G [ONSEMI]
Thyristor Surge Protectors High Voltage Bidirectional; 晶闸管浪涌保护器高压双向
| 型号： | NP3500SAT3G |
| 厂家： | 
ONSEMI |
| 描述： | Thyristor Surge Protectors High Voltage Bidirectional |
| 文件： | 总5页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NP Series
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional
NP Series Thyristor Surge Protector Devices (TSPD) protect
telecommunication circuits such as central office, access, and
customer premises equipment from overvoltage conditions. These are
bidirectional devices so they are able to have functionality of 2 devices
in one package, saving valuable space on board layout.
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These devices will act as a crowbar when overvoltage occurs and will
divert the energy away from circuit or device that is being protected.
Use of the NP Series in equipment will help meet various regulatory
requirements including: GR−1089−CORE, IEC 61000−4−5, ITU
K.20/21/45, IEC 60950, TIA−968−A, FCC Part 68, EN 60950,
UL 1950.
BIDIRECTIONAL SURFACE
MOUNT THYRISTOR
64 − 350 VOLTS
ELECTRICAL PARAMETERS
MT1
MT2
V
V
V
I
I
I
I
H
DRM
(BO)
T
DRM
(BO)
T
V
V
V
mA
mA
800
800
800
800
800
800
800
800
800
800
800
800
A
mA
150
150
150
150
150
150
150
150
150
150
150
150
Device
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
58
65
75
90
77
88
98
4
4
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
5
5
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
SMB
JEDEC DO−214AA
CASE 403C
130
160
180
220
240
260
300
350
400
120
140
170
180
190
220
275
320
MARKING DIAGRAM
AYWW
xxxxG
G
xxxx
Y
= Specific Device Code
= Year
WW
G
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
G = indicates leadfree, RoHS compliant
SURGE DATA RATINGS
Waveform
x = series ratings
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
Voltage
Current
ms
ms
A
150
150
90
B
C
Specification
GR−1089−CORE
IEC 61000−4−5
TIA−968−A
Unit
2x10
1.2x50
10x160
10x360
10x560
10x700
10x1000
2x10
8x20
250
250
150
125
100
100
80
500
400
200
175
150
200
100
A(pk)
Preferred devices are recommended choices for future use
and best overall value.
10x160
10x360
10x560
5x310
GR−1089−CORE
TIA−968−A
75
50
ITU−T K.20/21
GR−1089−CORE
75
10x1000
50
*
Recognized Components
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
November, 2006 − Rev. 0
NP0640S/D
NP Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristics (Note 1)
Symbol
Min
Typ
Max
Unit
Breakover Voltage (Both Polarities)
NP0640SxT3G
V
V
(BO)
77
88
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
98
130
160
180
220
240
260
300
350
400
NP3100SxT3G
NP3500SxT3G
Off−State Voltage (Both Polarities)
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
V
V
DRM
58
65
75
90
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
120
140
170
180
190
220
275
320
Off State Current
( V = 50 V ) Both Polarities
I
I
2.0
5.0
mA
mA
D1
DRM1
DRM2
( V = V
) Both Polarities
D2
DRM
Holding Current (Both Polarities) (Note 4) V = 500 V; I = 2.2 A
I
H
150
−
250
−
−
mA
V
S
T
On−State Voltage I = 1.0 A(pk) (PW = 300 mSec, DC = 2%)
V
4.0
500
T
T
Maximum Non−Repetitive Rate of Change of On−State Current (Note 1)
(Haefely test method, 1.0 pk < 100 A)
di/dt
−
−
A/mSec
Critical Rate of Rise of Off−State Voltage
dv/dt
5.0
−
−
kV/mSec
(Linear Waveform, V = 0.8 V
, T = 25°C)
D
DRM
J
CAPACITANCE
Typ
B
A
C
Characteristics
(f=1.0 MHz, 1.0 V , 2 Vdc bias)
Symbol
Unit
C
o
pF
rms
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
70
70
70
70
60
60
60
60
40
40
40
40
125
125
125
125
100
100
100
100
60
210
210
210
210
180
180
180
180
100
100
100
100
60
60
60
1. Electrical parameters are based on pulsed test methods.
2. di/dt must not be exceeded of a maximum of 100 A/mSec in this application.
3. Measured under pulsed conditions to reduce heating
4. Allow cooling before testing second polarity.
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2
NP Series
SURGE RATINGS
Characteristics
Symbol
A
B
C
Unit
Nominal Pulse
A(pk)
Surge Short Circuit Current Non – Repetitive
Double Exponential Decay Waveform (Notes 5, 6 and 7)
2 x 10 mSec
I
I
I
I
I
I
I
150
150
90
75
50
75
50
250
250
150
125
100
100
80
500
400
200
150
150
200
100
PPS1
PPS2
PPS3
PPS4
PPS5
PPS6
PPS7
8 x 20 mSec
10 x 160 mSec
10 x 360 mSec
10 x 560 mSec
10 x 700 mSec
10 x 1000 mSec
5. Allow cooling before testing second polarity.
6. Measured under pulse conditions to reduce heating.
7. Nominal values may not represent the maximum capability of a device.
+I
I
t = rise time to peak value
r
T
t = decay time to half value
f
Peak
Value
I
100
(BO)
I
H
−Voltage
+Voltage
Half Value
50
0
V
V
V
DRM (BO)
T
0t
t
f
r
TIME (ms)
−I
Figure 2. Voltage Current Characteristics of TSPD
Figure 1. Exponential Decay Pulse Waveform
Symbol
Parameter
Peak Off State Voltage
V
V
DRM
Breakover Voltage
Breakover Current
Holding Current
(BO)
(BO)
H
I
I
V
On State Voltage
On State Current
T
I
T
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3
NP Series
ORDERING INFORMATION
Part Number
†
Marking
064A
064B
064C
072A
072B
072C
090A
090B
090C
110A
110B
110C
130A
130B
130C
150A
150B
150C
180A
180B
180C
210A
210B
210C
230A
230B
230C
260A
260B
260C
310A
310B
310C
350A
350B
350C
Case
Shipping
NP0640SAT3G
NP0640SBT3G
NP0640SCT3G
NP0720SAT3G
NP0720SBT3G
NP0720SCT3G
NP0900SAT3G
NP0900SBT3G
NP0900SCT3G
NP1100SAT3G
NP1100SBT3G
NP1100SCT3G
NP1300SAT3G
NP1300SBT3G
NP1300SCT3G
NP1500SAT3G
NP1500SBT3G
NP1500SCT3G
NP1800SAT3G
NP1800SBT3G
NP1800SCT3G
NP2100SAT3G
NP2100SBT3G
NP2100SCT3G
NP2300SAT3G
NP2300SBT3G
NP2300SCT3G
NP2600SAT3G
NP2600SBT3G
NP2600SCT3G
NP3100SAT3G
NP3100SBT3G
NP3100SCT3G
NP3500SAT3G
NP3500SBT3G
NP3500SCT3G
SMB
(Pb−Free)
2500 / Tape and Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
NP Series
PACKAGE DIMENSIONS
SMB
CASE 403C−01
ISSUE A
S
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.06
3.30
1.90
1.96
MAX
4.57
3.81
2.41
2.11
0.152
0.30
1.27
D
B
A
B
C
D
H
J
0.160
0.130
0.075
0.077
0.180
0.150
0.095
0.083
0.0020 0.0060 0.051
0.006
0.030
0.012
0.050
0.15
0.76
K
P
S
0.020 REF
0.51 REF
0.205
0.220
5.21
5.59
C
H
J
K
P
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
mm
inches
ǒ
Ǔ
SCALE 8:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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For additional information, please contact your local
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NP0640S/D
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