NRVB10100MFST3G [ONSEMI]
SWITCHMODE Power Rectifiers;
| 型号： | NRVB10100MFST3G |
| 厂家： | 
ONSEMI |
| 描述： | SWITCHMODE Power Rectifiers 功效 瞄准线 光电二极管 |
| 文件： | 总4页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR10100MFS,
NRVB10100MFS
SWITCHMODE
Power Rectifiers
Features
• Low Power Loss / High Efficiency
http://onsemi.com
• New Package Provides Capability of Inspection and Probe After
Board Mounting
SCHOTTKY BARRIER
RECTIFIERS
• Guardring for Stress Protection
• Low Forward Voltage Drop
• 175°C Operating Junction Temperature
• Wettable Flacks Option Available
10 AMPERES
100 VOLTS
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
5,6
1,2,3
• These are Pb−Free Devices
MARKING
DIAGRAM
Mechanical Characteristics:
A
C
C
• Case: Epoxy, Molded
1
B10100
AYWZZ
A
A
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
Not Used
B10100 = Specific Device Code
A
Y
W
ZZ
= Assembly Location
= Year
• Device Meets MSL 1 Requirements
MAXIMUM RATINGS
= Work Week
= Lot Traceability
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
V
RWM
V
100
10
R
ORDERING INFORMATION
Average Rectified Forward Current
I
A
A
F(AV)
Device
Package
Shipping†
1500 /
(Rated V , T = 165°C)
R
C
Peak Repetitive Forward Current,
I
20
MBR10100MFST1G
SO−8 FL
FRM
(Rated V , Square Wave,
(Pb−Free) Tape & Reel
R
20 kHz, T = 163°C)
C
MBR10100MFST3G
NRVB10100MFST1G
SO−8 FL 5000 /
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
I
150
A
FSM
(Pb−Free) Tape & Reel
SO−8 FL 1500 /
(Pb−Free) Tape & Reel
SO−8 FL 5000 /
(Pb−Free) Tape & Reel
Storage Temperature Range
T
−65 to +175
−55 to +175
75
°C
°C
mJ
NRVB10100MFST3G
stg
Operating Junction Temperature
T
J
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
E
AS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
3B
M4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NOTE: The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RJA.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
October, 2013 − Rev. 0
MBR10100MFS/D
MBR10100MFS, NRVB10100MFS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm 1 oz. copper bond pad, on a FR4 board)
R
−
1.8
°C/W
θ
JC
2
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
v
V
F
(i = 10 Amps, T = 125°C)
0.64
0.80
0.88
0.95
F
J
(i = 10 Amps, T = 25°C)
F
J
Instantaneous Reverse Current (Note 1)
i
R
mA
(Rated dc Voltage, T = 125°C)
4
13
0.100
J
(Rated dc Voltage, T = 25°C)
0.003
J
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
100
10
100
10
T = 175°C
A
T
= 175°C
A
150°C
125°C
150°C
125°C
1
1
25°C
−40°C
0.6
25°C
−40°C
0.1
0.1
0
0.2
0.4
0.8
1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E−01
1.E−02
1.E−03
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
T
= 175°C
= 125°C
T
= 175°C
= 125°C
A
A
T
A
T
A
T
A
= 150°C
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
T
A
= 150°C
T
= 25°C
T
= 25°C
A
A
T
A
= −40°C
T
A
= −40°C
1.E−10
1.E−11
1.E−10
1.E−11
0
10 20 30 40 50 60 70 80 90 100
0
10
20 30 40
50 60 70
80 90 100
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
http://onsemi.com
2
MBR10100MFS, NRVB10100MFS
TYPICAL CHARACTERISTICS
18
1,000
R
= 1.8°C/W
q
JC
T = 25°C
J
dc
16
14
12
10
8
Square Wave
100
6
4
2
10
0
0
10 20 30 40 50 60 70 80 90 100
60
80
100
120
140
160
180
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating TO−220AB
8
I /I = 20
PK AV
T = 175°C
J
7
6
5
4
3
2
I /I = 10
PK AV
I
/I = 5
PK AV
Square Wave
dc
1
0
0
1
2
3
4
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Forward Power Dissipation
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Assumes 25°C ambient and soldered to
2
a 600 mm − oz copper pad on PCB
Single Pulse
0.01
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
PULSE TIME (sec)
Figure 8. Thermal Response
http://onsemi.com
3
MBR10100MFS, NRVB10100MFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
MIN
0.90
0.00
0.33
0.23
NOM
1.00
−−−
0.41
0.28
MAX
1.10
0.05
0.51
0.33
4 X
q
E1
2
c
D
5.15 BSC
4.90
4.00
6.15 BSC
5.90
3.65
1.27 BSC
0.61
1.35
0.61
0.17
D1
D2
E
E1
E2
e
G
K
L
L1
M
4.70
3.80
5.10
4.20
c
A1
5.70
3.45
6.10
3.85
1
2
3
4
0.51
1.20
0.51
0.05
3.00
0
0.71
1.50
0.71
0.20
3.80
TOP VIEW
C
3 X
e
SEATING
PLANE
0.10
0.10
C
C
3.40
−−−
DETAIL A
q
12
A
_
_
STYLE 2:
PIN 1. ANODE
2. ANODE
SIDE VIEW
DETAIL A
3. ANODE
4. NO CONNECT
5. CATHODE
SOLDERING FOOTPRINT*
b
8X
3X
4X
0.10
0.05
C
c
A
B
1.270
0.750
4X
1.000
e/2
L
1
4
K
0.965
0.29X05
0.475
1.330
E2
PIN 5
(EXPOSED PAD)
M
L1
2X
0.495
4.530
3.200
D2
BOTTOM VIEW
G
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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MBR10100MFS/D
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