NRVB1H100SFT3G [ONSEMI]
1.0 A, 100 V, Schottky Power Rectifier, Surface Mount;
| 型号： | NRVB1H100SFT3G |
| 厂家： | 
ONSEMI |
| 描述： | 1.0 A, 100 V, Schottky Power Rectifier, Surface Mount PC 光电二极管 |
| 文件： | 总5页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1H100SFT3G
Surface Mount
Schottky Power Rectifier
Plastic SOD−123FL Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. Because of its small size, it is ideal for use in
portable and battery powered products such as cellular and cordless
phones, chargers, notebook computers, printers, PDAs and PCMCIA
cards. Typical applications are AC−DC and DC−DC converters,
reverse battery protection, and “Oring” of multiple supply voltages
and any other application where performance and size are critical.
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
100 VOLTS
Features
• Guardring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0
• Package Designed for Optimal Automated Board Assembly
• ESD Ratings: Machine Model, C
Human Body Model, 3B
SOD−123FL
CASE 498
PLASTIC
• This is a Pb−Free Device
MARKING DIAGRAM
Mechanical Characteristics
L1HMG
• Reel Options: MBR1H100SFT3G = 10,000 per 13 in reel/8 mm tape
• Device Marking: L1H
G
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
L1H
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
• Case: Epoxy, Molded
(Note: Microdot may be in either location)
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
ORDERING INFORMATION
†
Device
Package
Shipping
MBR1H100SFT3G SOD−123 10000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
April, 2009 − Rev. 0
MBR1H100SF/D
MBR1H100SFT3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
100
V
RRM
RWM
R
V
V
Average Rectified Forward Current
L
I
1.0
50
A
A
O
(T = 162°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
Storage and Operating Junction Temperature Range (Note 1)
T
stg
, T
J
−65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
23
Unit
°C/W
°C/W
°C/W
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
ELECTRICAL CHARACTERISTICS
Characteristic
Y
R
R
JCL
85
q
JA
330
q
JA
Symbol
Value
Unit
V
F
V
Maximum Instantaneous Forward Voltage (Note 4)
0.76
0.84
0.61
0.68
(I = 1.0 A, T = 25°C)
F
J
(I = 2.0 A, T = 25°C)
F
J
(I = 1.0 A, T = 125°C)
F
J
(I = 2.0 A, T = 125°C)
F
J
Maximum Instantaneous Reverse Current (Note 4)
I
R
(Rated dc Voltage, T = 25°C)
40
0.5
mA
mA
J
(Rated dc Voltage, T = 125°C)
J
2
2
2. Mounted with 700 mm copper pad size (Approximately 1 in ) 1 oz FR4 Board.
2
3. Mounted with pad size approximately 20 mm copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
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2
MBR1H100SFT3G
TYPICAL CHARACTERISTICS
100
10
100
150°C
25°C
150°C
25°C
125°C
125°C
10
1
1
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
10
1
10
1
150°C
125°C
25°C
150°C
125°C
0.1
0.01
0.1
0.01
0.001
0.001
0.0001
0.0001
25°C
0.00001
0.00001
0
10 20 30 40 50 60 70 80 90 100
0
10
20 30 40 50 60
70 80 90 100
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
2.0
1.5
1.0
0.8
0.6
0.4
R
= 23°C/W
q
JL
T = 175°C
J
Square Wave
dc
dc
Square Wave
1.0
0.5
0
0.2
0
135
140
145
150
155
160
165
170 175
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
T , LEAD TEMPERATURE (°C)
L
I , AVERAGE FORWARD CURRENT (A)
O
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
MBR1H100SFT3G
TYPICAL CHARACTERISTICS
140
120
100
80
T = 25°C
J
60
40
20
0
0
10 20
30 40 50 60 70 80 90 100
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance
1000
100
50% (DUTY CYCLE)
25%
10%
5.0%
10 2.0%
1.0%
1.0
0.1
SINGLE PULSE
0.01
0.000001 0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 8. Thermal Response, Junction−to−Ambient (20 mm2 pad)
100
10
50% (DUTY CYCLE)
25%
10%
5.0%
2.0%
1.0%
1.0
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad)
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4
MBR1H100SFT3G
PACKAGE DIMENSIONS
SOD−123LF
CASE 498−01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
E
q
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT
SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM
FROM THE LEAD TIP.
D
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
MIN
0.90
0.00
0.70
0.10
1.50
2.50
0.55
3.40
0°
NOM
0.95
0.05
0.90
0.15
1.65
2.70
0.75
3.60
−
MAX
MIN
0.035
0.000
0.028
0.004
0.059
0.098
0.022
0.134
0°
NOM
0.037
0.002
0.035
0.006
0.065
0.106
0.030
0.142
−
MAX
0.039
0.004
0.043
0.008
0.071
0.114
0.037
0.150
8°
A1
1.00
0.10
1.10
0.20
1.80
2.90
0.95
3.80
8°
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
L
E
L
H
E
q
b
SOLDERING FOOTPRINT*
0.91
H
E
0.036
1.22
q
0.048
2.36
0.093
c
4.19
0.165
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MBR1H100SF/D
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