NRVBA1H100NT3G [ONSEMI]
Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package;
| 型号： | NRVBA1H100NT3G |
| 厂家： | 
ONSEMI |
| 描述： | Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package 光电二极管 |
| 文件： | 总6页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
MBRA1H100, NRVBA1H100,
NRVBA1H100N
Employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 100 VOLTS
Features
• Small Compact Surface Mountable Package with J−Bent Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Low Forward Voltage Drop
SMA
CASE 403D
• Guardring for Stress Protection
1
2
• NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
Cathode
Anode
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
MARKING DIAGRAMS
Compliant
A110
AYWWG
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 70 mg (approximately)
A110
A
Y
= Device Code
= Assembly Location**
= Year
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
WW
G
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Cathode Lead Indicated by Polarity Band
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
• ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3B
• Device Meets MSL 1 Requirements
ORDERING INFORMATION
†
Device
Package Shipping
MBRA1H100T3G
SMA 5,000 /
(Pb−Free) Tape & Reel
SMA 5,000 /
NRVBA1H100T3G*
NRVBA1H100NT3G*
(Pb−Free) Tape & Reel
SMA 5,000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
December, 2019 − Rev. 4
MBRA1H100/D
MBRA1H100, NRVBA1H100, NRVBA1H100N
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
100
V
RRM
RWM
R
V
V
Average Rectified Forward Current
I
A
A
O
(T = 167°C)
1.0
L
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
50
Storage and Operating Junction Temperature Range (Note 1)
T
stg
, T
J
−65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
14
Unit
°C/W
°C/W
°C/W
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Y
R
R
JCL
75
q
JA
Thermal Resistance, Junction−to−Ambient (Note 3)
280
q
JA
2
2
2. Mounted with 700 mm copper pad size (Approximately 1 in ) 1 oz FR4 Board.
2
3. Mounted with pad size approximately 6 mm copper, 1 oz FR4 Board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
V
F
V
Maximum Instantaneous Forward Voltage (Note 4)
0.76
0.84
0.61
0.68
(I = 1.0 A, T = 25°C)
F
J
(I = 2.0 A, T = 25°C)
F
J
(I = 1.0 A, T = 125°C)
F
J
(I = 2.0 A, T = 125°C)
F
J
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, T = 25°C)
I
R
40
0.5
mA
mA
J
(Rated dc Voltage, T = 125°C)
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
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2
MBRA1H100, NRVBA1H100, NRVBA1H100N
TYPICAL CHARACTERISTICS
100
10
100
150°C
25°C
150°C
25°C
125°C
125°C
10
1
1
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
10
1
10
1
150°C
125°C
25°C
150°C
125°C
0.1
0.01
0.1
0.01
0.001
0.001
0.0001
25°C
0.0001
0.00001
0.00001
0
10 20 30 40 50 60 70 80 90 100
0
10
20 30 40 50 60
70 80 90 100
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
2.0
1.5
1.0
0.8
0.6
0.4
R
= 14°C/W
q
JL
T = 175°C
J
Square Wave
dc
dc
Square Wave
1.0
0.5
0
0.2
0
135
140
145
150
155
160
165
170 175
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
T , LEAD TEMPERATURE (°C)
L
I , AVERAGE FORWARD CURRENT (A)
O
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
MBRA1H100, NRVBA1H100, NRVBA1H100N
TYPICAL CHARACTERISTICS
140
T = 25°C
J
120
100
80
60
40
20
0
0
10 20
30 40 50 60 70 80 90 100
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance
1000
100
50% (DUTY CYCLE)
20%
10%
5.0%
10
2.0%
1.0%
1.0
0.1
SINGLE PULSE
0.01
0.000001 0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 8. Thermal Response, Junction−to−Ambient (6 mm2 pad)
100
10
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0
0.1
1.0%
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad)
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SMA
CASE 403D
ISSUE H
DATE 23 SEP 2015
STYLE 1
STYLE 2
SCALE 1:1
H
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
E
MILLIMETERS
INCHES
NOM
DIM
A
A1
b
c
D
E
H
E
L
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
NOM
2.10
0.10
1.45
0.28
2.60
4.32
5.21
1.14
MAX
MIN
MAX
0.087
0.008
0.064
0.016
0.115
0.180
0.220
0.060
2.20
0.20
1.63
0.41
2.92
4.57
5.59
1.52
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
GENERIC
MARKING DIAGRAM*
A
xxxx
AYWWG
xxxx
AYWWG
A1
c
L
STYLE 1
STYLE 2
SOLDERING FOOTPRINT*
xxxx
A
Y
= Specific Device Code
= Assembly Location
= Year
4.000
0.157
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
2.000
0.079
2.000
0.079
mm
inches
ǒ
Ǔ
SCALE 8:1
STYLE 1:
STYLE 2:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
NO POLARITY
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON04079D
SMA
PAGE 1 OF 1
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