NRVHP420MFDT3G [ONSEMI]

Rectifier, 4 A (2 x 2), 200 V Ultrafast Dual die;
NRVHP420MFDT3G
型号: NRVHP420MFDT3G
厂家: ONSEMI    ONSEMI
描述:

Rectifier, 4 A (2 x 2), 200 V Ultrafast Dual die

快速恢复能力电源 超快恢复二极管 快速恢复二极管 超快速恢复能力电源 光电二极管
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NRVHP420MFD  
Switch-Mode  
Power Rectifier  
This ultrafast rectifier in the dual flag SO−8 flat lead package offers  
designers a unique degree of versatility and design freedom. The two  
devices are electrically independent and can be used separately, as  
common cathode, as common anode or in series as a function of board  
level layout. The exposed pad design provides low thermal resistance.  
The clip attach design creates a package with very efficient die size to  
board area ratio. While thermal performance is nearly the same as the  
DPAK package height and board footprint are less than half.  
www.onsemi.com  
ULTRAFAST RECTIFIER  
4 AMPERES (2x2), 200 VOLTS  
Features  
7,8  
5,6  
1
3
New Package Provides Capability of Inspection and Probe After  
Board Mounting  
Low Forward Voltage Drop  
175°C Operating Junction Temperature  
NRV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
MARKING DIAGRAM  
C1 C1  
1
A1  
NC  
A2  
C1  
C1  
C2  
C2  
DFN8 5x6  
(SO8FL)  
CASE 506BT  
HP420D  
AYWZZ  
These are Pb−Free and Halide−Free Devices  
NC  
Mechanical Characteristics:  
C2 C2  
Case: Epoxy, Molded  
HP420D = Specific Device Code  
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.  
Lead Finish: 100% Matte Sn (Tin)  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Device Meets MSL 1 Requirements  
ORDERING INFORMATION  
Applications  
Excellent Alternative to DPAK in Space−Constrained Automotive  
Applications  
Device  
Package  
Shipping  
NRVHP420MFDT1G  
DFN8  
(Pb−Free)  
1500 / Tape  
& Reel  
Output Rectification in Switching Power Supplies  
Freewheeling Diode used with Inductive Loads  
NRVHP420MFDT3G  
DFN8  
(Pb−Free)  
5000 / Tape  
& Reel  
NRVHP420MFDWFT1G  
DFN8  
(Pb−Free)  
1500 / Tape  
& Reel  
NRVHP420MFDWFT3G  
DFN8  
(Pb−Free)  
5000 / Tape  
& Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
April, 2018 − Rev. 2  
NHP420MFD/D  
NRVHP420MFD  
MAXIMUM RATINGS (per diode unless noted)  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RRM  
V
RWM  
V
200  
2.0  
R
Average Rectified Forward Current  
I
A
A
A
F(AV)  
(Rated V , T = 167°C)  
R
C
Peak Repetitive Forward Current,  
I
4.0  
40  
FRM  
(Rated V , Square Wave, 20 kHz, T = 165°C)  
R
C
Non−Repetitive Peak Surge Current  
I
FSM  
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)  
Storage Temperature Range  
T
−65 to +175  
°C  
°C  
mJ  
stg  
Operating Junction Temperature  
T
−55 to +175  
J
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)  
ESD Rating (Human Body Model)  
E
AS  
10  
2
ESD Rating (Machine Model)  
M4  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS (per diode unless noted)  
Characteristic  
Symbol  
Typ  
Max  
Unit  
Thermal Resistance, Junction−to−Case, Steady State  
(Assumes 600 mm 1 oz. copper bond pad, on a FR4 board)  
R
7.2  
°C/W  
θ
JC  
2
ELECTRICAL CHARACTERISTICS (per diode unless noted)  
Instantaneous Forward Voltage (Note 1)  
v
V
F
(i = 3.0 Amps, T = 125°C)  
0.76  
0.89  
0.86  
0.96  
0.85  
1.0  
0.95  
1.10  
F
J
(i = 3.0 Amps, T = 25°C)  
F
J
(i = 6.0 Amps, T = 125°C)  
F
J
(i = 6.0 Amps, T = 25°C)  
F
J
Instantaneous Reverse Current (Note 1)  
i
R
mA  
(Rated dc Voltage, T = 125°C)  
1.00  
0.03  
35  
0.5  
J
(Rated dc Voltage, T = 25°C)  
J
Reverse Recovery Time  
t
t
20  
30  
ns  
ns  
rr  
I = 3.0 A, V = 30 V, dl/dt = 50 A/ms, T = 25°C  
F
R
J
Reverse Recovery Time  
I = 3.0 A, V = 30 V, dl/dt = 50 A/ms, T = 125°C  
23  
40  
rr  
F
R
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.  
www.onsemi.com  
2
 
NRVHP420MFD  
TYPICAL CHARACTERISTICS  
100  
10  
1
100  
10  
T = 175°C  
A
T = 175°C  
A
T = 150°C  
A
T = 150°C  
A
T = 125°C  
A
T = 125°C  
A
1
T = 85°C  
A
T = 85°C  
A
T = 25°C  
A
T = 25°C  
A
T = −55°C  
T = −55°C  
A
A
0.1  
0.1  
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4  
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.31.4 1.5 1.6  
V , INSTANTANEOUS FORWARD VOLTAGE (V)  
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)  
F
Figure 1. Typical Instantaneous Forward  
Characteristics  
Figure 2. Maximum Instantaneous Forward  
Characteristics  
1.E−04  
1.E−05  
1.E−06  
1.E−07  
1.E−08  
1.E−09  
1.E−03  
1.E−04  
1.E−05  
1.E−06  
1.E−07  
1.E−08  
1.E−09  
1.E−10  
T = 175°C  
A
T = 175°C  
A
T = 150°C  
A
T = 150°C  
A
T = 125°C  
A
T = 125°C  
A
T = 85°C  
A
T = 85°C  
A
T = 25°C  
A
T = 25°C  
A
T = −55°C  
A
1.E−10  
1.E−11  
1.E−12  
T = −55°C  
A
0
20 40 60  
80 100 120 140 160 180 200  
0
20 40 60 80 100 120 140 160 180 200  
V , INSTANTANEOUS REVERSE VOLTAGE (V)  
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)  
R
Figure 3. Typical Reverse Characteristics  
Figure 4. Maximum Reverse Characteristics  
100  
4
3
2
1
0
T = 25°C  
J
DC  
Square Wave  
10  
R
= 7.2°C/W  
q
JC  
1
0
20 40 60 80 100 120 140 160 180 200  
0
20  
40  
60  
80  
100 120 140 160 180  
V , REVERSE VOLTAGE (V)  
R
T , CASE TEMPERATURE (°C)  
C
Figure 5. Typical Junction Capacitance  
Figure 6. Current Derating per Device  
www.onsemi.com  
3
NRVHP420MFD  
TYPICAL CHARACTERISTICS  
3.0  
2.5  
2.0  
1.5  
1.0  
I
/I = 20  
T = 175°C  
PK AV  
J
I
/I = 10  
PK AV  
I /I = 5  
PK AV  
Square Wave  
DC  
0.5  
0
0
0.5  
1.0  
1.5  
2.0  
I , AVERAGE FORWARD CURRENT (A)  
F(AV)  
Figure 7. Forward Power Dissipation  
100  
10  
1
50% Duty Cycle  
20%  
10%  
5%  
2%  
1%  
0.1  
Single Pulse  
0.01  
0.001  
0.000001 0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
PULSE TIME (sec)  
Figure 8. Typical Thermal Characteristics  
www.onsemi.com  
4
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
DFN8 5x6, 1.27P Dual Flag (SO8FLDual)  
CASE 506BT  
ISSUE F  
1
DATE 23 NOV 2021  
2X  
SCALE 2:1  
NOTES:  
0.20  
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED  
BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP.  
4. PROFILE TOLERANCE APPLIES TO THE EXPOSED PAD AS WELL  
AS THE TERMINALS.  
5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
D
A
B
E
2X  
D1  
0.20  
C
8
7
6
5
6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED  
AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST  
POINT ON THE PACKAGE BODY.  
7. A VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS AREA.  
PIN ONE  
E1  
MILLIMETERS  
IDENTIFIER  
DIM  
A
A1  
b
b1  
c
MIN  
0.90  
−−−  
0.33  
0.33  
0.20  
NOM  
−−−  
−−−  
0.42  
0.42  
−−−  
5.15 BSC  
4.90  
4.10  
1.70  
6.15 BSC  
5.90  
4.15  
1.27 BSC  
0.55  
−−−  
−−−  
−−−  
0.61  
MAX  
1.10  
0.05  
0.51  
0.51  
0.33  
NOTE 7  
4X  
h
1
2
3
4
c
TOP VIEW  
D
A1  
D1  
D2  
D3  
E
E1  
E2  
e
G
h
K
K1  
4.70  
3.90  
1.50  
5.10  
4.30  
1.90  
0.10  
0.10  
C
C
A
DETAIL B  
5.70  
3.90  
6.10  
4.40  
ALTERNATE  
SEATING  
PLANE  
NOTE 6  
DETAIL A  
CONSTRUCTION  
C
NOTE 4  
SIDE VIEW  
DETAIL A  
0.45  
−−−  
0.51  
0.56  
0.48  
3.25  
1.80  
0.65  
12  
−−−  
−−−  
_
D2  
D3  
L
M
N
0.71  
3.75  
2.20  
4X L  
K
3.50  
2.00  
e
1
4
SOLDERING FOOTPRINT*  
DETAIL B  
4.56  
4X  
2X  
2.08  
2X  
0.56  
b1  
8X  
0.75  
N
E2  
M
8
5
4X  
G
b
8X  
4X  
1.40  
0.10  
0.05  
C
C
A B  
K1  
6.59  
4.84  
NOTE 3  
2.30  
BOTTOM VIEW  
3.70  
GENERIC  
MARKING DIAGRAM*  
0.70  
1
XXXXXX  
AYWZZ  
4X  
1.27  
PITCH  
1.00  
5.55  
XXXXXX = Specific Device Code  
DIMENSION: MILLIMETERS  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON50417E  
DFN8 5X6, 1.27P DUAL FLAG (SO8FLDUAL)  
PAGE 1 OF 1  
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