NRVTS5100ETFSTAG [ONSEMI]
Trench Surface Mount Schottky Rectifier;
| 型号： | NRVTS5100ETFSTAG |
| 厂家： | 
ONSEMI |
| 描述： | Trench Surface Mount Schottky Rectifier 功效 光电二极管 |
| 文件： | 总5页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NRVTS5100ETFS
Trench Surface Mount
Schottky Rectifier
This m8FL flat lead Trench Schottky rectifier provides fast
switching performance with soft recovery in a compact thermally
efficient package. Its compact footprint makes it ideally suited to
portable and automotive applications where board space is at a
premium. Its low profile makes it a good option for flat panel display
and other applications with limited vertical clearance. The device
offers low leakage over temperature making it a good match for
applications requiring low quiescent current.
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TRENCH SCHOTTKY
RECTIFIER 5.0 AMPERE
100 VOLTS
Features
• Fast Soft Switching for Reduced EMI and Higher Efficiency
• Low Profile − Maximum Height of 1.1 mm
2
• Small Footprint − Footprint Area of 13.5 mm
1
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
WDFN8
(m8FL)
CASE 511AB
FLAT LEAD
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING DIAGRAM
Mechanical Characteristics:
• Case: Molded Epoxy
1
A
A
A
C
C
C
C
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 95 mg (Approximately)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
• MSL 1
T510
AYWWG
G
NC
T510
A
Y
= Specific Device Code
= Assembly Location
= Year
Applications
WW
G
= Work Week
= Pb−Free Package
• Switching Power Supplies including Mini−adapters and Displays
• Instrumentation
• Engine Control Recirculation Diodes
• Freewheeling Diode Where Space is at a Premium
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package Shipping
NRVTS5100ETFSTAG
NRVTS5100ETFSWFTAG
NRVTS5100ETFSTWG
NRVTS5100ETFSWFTWG
WDFN8 1500 / Tape
(Pb−Free) & Reel
WDFN8 5000 / Tape
(Pb−Free) & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
June, 2018 − Rev. 0
NRVTS5100ETFS/D
NRVTS5100ETFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
100
V
RRM
V
RWM
V
R
Average Rectified Forward Current
(T = TBD°C)
L
I
A
A
A
O
5.0
5.6
Peak Repetitive Forward Current
I
FRM
(Rated V , Square Wave, 20 kHz) T = 161°C
R
L
Non−Repetitive Peak Surge Current
I
FSM
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
80
Storage Temperature Range
T
−65 to +175
−65 to +175
°C
°C
stg
Operating Junction Temperature
T
J
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Tab (Note 1)
Symbol
Value
3.3
Unit
°C/W
°C/W
y
JCT
Thermal Resistance, Junction−to−Ambient (Note 1)
1. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
R
50.2
q
JA
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Instantaneous Forward Voltage (Note 1)
v
V
F
(i = 5 Amps, T = 25°C)
0.95
0.70
1.00
0.80
F
J
(i = 5 Amps, T = 125°C)
F
J
Reverse Current (Note 1)
i
R
(Rated dc Voltage, T = 25°C)
1.50
1.29
50
7.5
mA
mA
J
(Rated dc Voltage, T = 125°C)
J
Diode Capacitance
C
pF
d
(Rated dc Voltage, T = 25°C, f = 1 MHz)
26.5
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
NRVTS5100ETFS
TYPICAL CHARACTERISTICS
100
10
100
T = 175°C
A
T = 175°C
A
T = 150°C
A
10
T = 150°C
A
T = 125°C
A
T = 125°C
A
1
1
T = 85°C
T = 25°C
A
A
T = 85°C
T = 25°C
A
A
T = −55°C
T = −55°C
A
A
0.1
0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
1.E−02
1.E−03
1.E−04
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
T = 175°C
T = 175°C
A
A
T = 150°C
T = 150°C
A
A
T = 125°C
A
T = 125°C
A
T = 85°C
A
T = 85°C
A
1.E−05
1.E−06
1.E−07
T = 25°C
A
T = 25°C
A
T = −55°C
A
T = −55°C
A
1.E−08
1.E−09
1.E−10
1.E−09
1.E−10
10
20
30
40
50
60
70
80
90 100
10 20
30
40
50
60
70
80
90 100
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
1000
100
10
8
R
= 3.3°C/W
q
JC
T = 25°C
J
DC
Square Wave
6
4
10
1
2
0
0.1
1
10
100
0
25
50
75
100
125
150
175
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating per Diode
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3
NRVTS5100ETFS
TYPICAL CHARACTERISTICS
7
6
5
4
3
2
I
/I = 5
I
/I = 10
PK AV
PK AV
I /I = 20
PK AV
DC
Square Wave
1
0
0
1
2
3
4
5
6
7
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Forward Power Dissipation
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 8. Thermal Characteristics
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4
NRVTS5100ETFS
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
NOTES:
0.20
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
D
A
B
E
2X
D1
MILLIMETERS
INCHES
NOM
0.030
−−−
0.012
0.20
C
8
1
7
6
5
4
DIM
A
A1
b
MIN
0.70
0.00
0.23
0.15
NOM
0.75
−−−
0.30
0.20
MAX
MIN
MAX
0.031
0.002
0.016
0.010
0.80
0.05
0.40
0.25
0.028
0.000
0.009
0.006
4X
q
E1
0.008
c
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
0.032
0.017
D
3.30 BSC
3.05
2.11
3.30 BSC
3.05
1.60
0.30
0.65 BSC
0.41
0.80
0.43
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
2.95
1.98
3.15
2.24
0.116
0.078
0.124
0.088
c
2
3
A1
TOP VIEW
2.95
1.47
0.23
3.15
1.73
0.40
0.116
0.058
0.009
0.124
0.068
0.016
0.10
0.10
C
C
A
C
6X
e
0.30
0.65
0.30
0.06
1.40
0
0.51
0.95
0.56
0.20
1.60
0.012
0.026
0.012
0.002
0.055
0
0.020
0.037
0.022
0.008
0.063
SEATING
PLANE
0.005
0.059
−−−
0.13
1.50
−−−
DETAIL A
SIDE VIEW
DETAIL A
q
12
12
_
_
_
_
8X b
0.10
0.05
C
C
A
B
SOLDERING FOOTPRINT*
8X
e/2
0.42
0.65
PITCH
4X
L
4X
0.66
1
8
4
PACKAGE
OUTLINE
K
E2
M
E3
5
3.60
L1
D2
BOTTOM VIEW
G
2.30
0.57
0.47
0.75
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NRVTS5100ETFS/D
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