NRVTS6100PFST3G [ONSEMI]

6 A, 100 V High Performance Trench Schottky Rectifier in TO-277 package;
NRVTS6100PFST3G
型号: NRVTS6100PFST3G
厂家: ONSEMI    ONSEMI
描述:

6 A, 100 V High Performance Trench Schottky Rectifier in TO-277 package

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DATA SHEET  
www.onsemi.com  
Schottky Barrier Rectifier,  
Trench-based,  
High Performance  
SCHOTTKY BARRIER  
RECTIFIER, 6 AMPERES  
100 VOLTS  
NRTS6100PFS,  
NRVTS6100PFS  
3
This Trench Schottky rectifier is a high performance device in a  
TO277 package. The lower forward voltage, less leakage current,  
and small junction capacitance are suitable to high switching  
frequency high density DC to DC conversion applications. It offers  
higher avalanche energy capability for Oring or reverse protection  
applications. The TO277 package provides excellent thermal  
performance, less land area of board space, and a low profile.  
1
2
TO2773LD  
CASE 340CZ  
Anode 1  
3
Cathode  
Anode 2  
Features  
Lower Forward Voltage Drop  
Less Leakage Current in High Temperature  
Small Junction Capacitance for High Switching Frequency  
Higher Avalanche Energy Capability  
175°C Operating Junction Temperature  
Package Provided Capability of Inspection and Probe After Board  
Mounting  
MARKING DIAGRAM  
T06100  
AWLYW  
T06100 = Specific Device Code  
A
Y
= Assembly Location  
= Year  
Good Alternative Solution of SMC and DPAK Package  
W
WL  
= Work Week  
= Wafer Lot  
Mechanical Characteristics:  
Case: Epoxy, Molded  
Epoxy Meets Flammability Rating UL 940 @ 0.125 in.  
Lead Finish: 100% Matte Sn (Tin)  
ORDERING INFORMATION  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
Device  
Package  
Shipping†  
1500 /  
Device Meets MSL 1 Requirements  
NRTS6100PFST3G  
TO277  
(PbFree) Tape & Reel  
ESD Ratings:  
Human Body Model: 8000 V (Class 3B)  
Charged Device Model: > 1000 V (Class C5)  
NRVTS6100PFST3G  
TO277 1500 /  
(PbFree) Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Applications  
High Switching Frequency DC/DC Converters  
nd  
2 Rectifier  
Oring / Reverse Protection  
Freewheeling Diode for Inductive Loads  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
September, 2021 Rev. 1  
NRTS6100PFS/D  
NRTS6100PFS, NRVTS6100PFS  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
100  
V
RRM  
RWM  
R
V
V
Continuous Forward Current  
I
6
A
A
F(DC)  
(T = 168°C, DC)  
C
Peak Repetitive Forward Current,  
I
12  
FRM  
(T = 166°C, Square Wave, Duty = 0.5)  
C
NonRepetitive Avalanche Energy  
E
AS  
145  
mJ  
(T = 25°C)  
J
Storage Temperature Range  
T
65 to +175  
55 to +175  
°C  
°C  
stg  
Operating Junction Temperature (Note 1)  
T
J
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient dP /dT < 1/R  
q
D
J
JA  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
°C/W  
°C/W  
°C/W  
°C/W  
Thermal Resistance, JunctiontoAmbient  
R
70  
2.2  
1.1  
0.7  
θ
JA  
Thermal Resistance, JunctiontoCase Bottom  
Thermal Characterization, JunctiontoCase Top  
Thermal Characterization, JunctiontoLead of Cathode  
R
θ
JCB  
JCT  
JLC  
Y
Y
2
NOTE: (Assumes 600 mm , 1 oz. copper bond pad on a FR4 board)  
ELECTRICAL CHARACTERISTICS  
Characteristic  
Symbol  
Typ  
Max  
Unit  
Instantaneous Forward Voltage (Note 2)  
V
F
V
(I = 3 A, T = 25°C)  
0.52  
0.47  
0.62  
0.56  
F
J
(I = 3 A, T = 125°C)  
F
J
(I = 6 A, T = 25°C)  
0.68  
0.62  
F
J
(I = 6 A, T = 125°C)  
F
J
Instantaneous Reverse Current (Note 2)  
I
R
(V = Rated DC Voltage, T = 25°C)  
6.2  
3.3  
50  
15  
mA  
mA  
R
J
(V = Rated DC Voltage, T = 125°C)  
R
J
Junction Capacitance  
C
pF  
J
(V = 1 V, T = 25°C, 1 MHz)  
827  
R
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.  
www.onsemi.com  
2
 
NRTS6100PFS, NRVTS6100PFS  
TYPICAL CHARACTERISTICS  
30  
27  
24  
21  
18  
20  
T = 175°C  
J
T = 175°C  
J
18  
16  
14  
12  
10  
8
R
= 2.2°C/W  
q
JCB  
R
= 70°C/W  
q
JA  
D = 0.2  
D = 0.3  
Square Wave  
Square Wave (Duty = 0.5)  
DC  
15  
12  
9
D = 0.5  
DC  
6
4
2
0
6
3
0
25 40 55 70 85 100 115 130 145 160 175  
25 40 55 70 85 100 115 130 145 160 175  
T , CASE TEMPERATURE (°C)  
C
T , AMBIENT TEMPERATURE (°C)  
A
Figure 1. Forward Current Derating of Case  
Temperature  
Figure 2. Forward Current Derating of Ambient  
Temperature  
100  
10  
100  
10  
T = 175°C  
A
T = 25°C  
A
T = 150°C  
A
T = 125°C  
A
T = 85°C  
A
1
1
T = 125°C  
A
T = 25°C  
A
T = 20°C  
A
T = 40°C  
T = 40°C  
A
A
0.1  
0.1  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
V , INSTANTANEOUS FORWARD VOLTAGE (V)  
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)  
F
Figure 3. Typical Forward Characteristics  
Figure 4. Maximum Forward Characteristics  
1.E+00  
1.E01  
1.E02  
1.E01  
1.E02  
1.E03  
1.E04  
1.E05  
1.E06  
T = 150°C  
A
T = 175°C  
A
T = 125°C  
A
1.E03  
1.E04  
T = 125°C  
A
T = 85°C  
A
1.E05  
1.E06  
T = 25°C  
A
T = 25°C  
A
1.E07  
1.E08  
T = 20°C  
A
T = 40°C  
1.E09  
1.E10  
1.E11  
T = 40°C  
A
A
1.E07  
1.E08  
0
10  
20 30 40 50 60 70  
80 90 100  
0
10  
20 30 40 50 60 70  
80 90 100  
V , INSTANTANEOUS REVERSE VOLTAGE (V)  
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)  
R
Figure 5. Typical Reverse Characteristics  
Figure 6. Maximum Reverse Characteristics  
www.onsemi.com  
3
NRTS6100PFS, NRVTS6100PFS  
TYPICAL CHARACTERISTICS  
10,000  
1000  
5.0  
T = 175°C  
J
T = 25°C  
J
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
Square Wave  
D = 0.5  
DC  
D = 0.3  
D = 0.2  
100  
10  
0.5  
0
0.1  
1
10  
100  
0
1
2
3
, AVERAGE FORWARD CURRENT (A)  
F(AV)  
4
5
6
V , REVERSE VOLTAGE (V)  
I
R
Figure 7. Typical Junction Capacitance  
Figure 8. Average Forward Power Dissipation  
100  
50% (DUTY CYCLE)  
20%  
10%  
5.0%  
10  
1
2.0%  
1.0%  
0.1  
SINGLE PULSE  
0.01  
2
(Assumes 600 mm , 1 oz. copper bond pad on a FR4 board)  
0.001  
0.000001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
PULSE TIME (s)  
Figure 9. Typical Thermal Characteristics, JunctiontoAmbient  
www.onsemi.com  
4
NRTS6100PFS, NRVTS6100PFS  
PACKAGE DIMENSIONS  
TO2773LD  
CASE 340CZ  
ISSUE A  
www.onsemi.com  
5
NRTS6100PFS, NRVTS6100PFS  
onsemi,  
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
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TECHNICAL SUPPORT  
North American Technical Support:  
Voice Mail: 1 8002829855 Toll Free USA/Canada  
Phone: 011 421 33 790 2910  
Europe, Middle East and Africa Technical Support:  
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For additional information, please contact your local Sales Representative  
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