NRVTSA3100ET3G-GA01 [ONSEMI]
Trench Schottky Rectifier, Very Low Leakage, 100V, 3A in SMA package;
| 型号： | NRVTSA3100ET3G-GA01 |
| 厂家： | 
ONSEMI |
| 描述： | Trench Schottky Rectifier, Very Low Leakage, 100V, 3A in SMA package |
| 文件： | 总6页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Low Forward Voltage, Low
Leakage Trench-based
Schottky Rectifier
SCHOTTKY BARRIER
RECTIFIERS
3 AMPERES
100 VOLTS
NRVTSA3100E
Features
Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
High Surge Capability
SMA
CASE 403D
STYLE 1
MARKING DIAGRAM
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
TE31
AYWWG
These are Pb−Free and Halide−Free Devices
A
Y
= Assembly Location
= Year
Typical Applications
Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
High Frequency and DC−DC Converters
WW
= Work Week
= Pb−Free Package
G
(Note: Microdot may be in either location)
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
ORDERING INFORMATION
Device
Package Shipping†
SMA 5000 /
LED Lighting
NRVTSA3100ET3G
NRVTSA3100ET3G−GA01
(Pb−Free) Tape & Reel
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Lead and Mounting SurfaceTemperature for Soldering Purposes:
260C Max. for 10 Seconds
Device Meets MSL 1 Requirements
Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
April, 2023 − Rev. 4
NRVTSA3100E/D
NRVTSA3100E
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
V
RWM
V
100
3.0
R
Average Rectified Forward Current
(T = 134C)
L
I
A
A
A
F(AV)
Peak Repetitive Forward Current,
I
6.0
50
FRM
(Square Wave, 20 kHz, T = 127C)
L
Non−Repetitive Peak Surge Current
I
FSM
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
T
−65 to +175
−55 to +175
1A
C
C
stg
Operating Junction Temperature
T
J
ESD Rating (Human Body Model)
ESD Rating (Charged Device Model)
>1000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Maximum Thermal Resistance, Steady State (Note 1)
Junction−to−Lead
Junction−to−Ambient
C/W
R
R
JA
−
−
22
80
JL
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 2)
v
V
F
(i = 1.0 Amps, T = 25C)
0.61
0.88
−
F
J
(i = 3.0 Amps, T = 25C)
0.995
F
J
(i = 1.0 Amps, T = 125C)
0.53
0.66
−
0.70
F
J
(i = 3.0 Amps, T = 125C)
F
J
Reverse Current (Note 2)
i
R
(Rated dc Voltage, T = 25C)
0.90
0.62
5.0
2.0
mA
mA
J
(Rated dc Voltage, T = 125C)
J
Diode Capacitance
C
pF
d
(Rated dc Voltage, T = 25C, f = 1 MHz)
14.3
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. Assumes 600 mm 1 oz. copper bond pad, on a FR4 board.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
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2
NRVTSA3100E
TYPICAL CHARACTERISTICS
100
10
100
T = 85C
A
T = 175C
A
T = 175C
A
T = 85C
A
10
T = 150C
A
T = 150C
A
T = 125C
A
T = 25C
A
T = 125C
A
T = 25C
A
1
1
T = −55C
T = −55C
A
A
0.1
0.2
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
1.E−02
1.E−03
T = 175C
A
T = 175C
A
1.E−02
1.E−03
1.E−04
T = 150C
A
T = 150C
A
T = 125C
A
T = 125C
A
1.E−04
1.E−05
1.E−06
T = 85C
A
T = 85C
A
1.E−05
1.E−06
1.E−07
T = 25C
A
1.E−07
1.E−08
T = 25C
A
10
20
30
40
50
60
70
80
90 100
10
20
30
40
50
60
70
80
90 100
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
1000
100
10
5
4
R
= 22C/W
T = 25C
J
q
JL
DC
3
2
Square Wave
1
0
0.1
1
10
100
0 10
30
50
70
90 110 130 150 170
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
NRVTSA3100E
TYPICAL CHARACTERISTICS
6
I /I = 20
PK AV
5
4
I /I = 10
PK AV
I /I = 5
PK AV
3
2
Square Wave
DC
1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Forward Power Dissipation
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (S)
Figure 8. Typical Transient Thermal Response, Junction−to−Ambient
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SMA
CASE 403D
ISSUE J
STYLE 1
STYLE 2
DATE 22 OCT 2021
SCALE 1:1
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
STYLE 2:
NO POLARITY
GENERIC
MARKING DIAGRAM*
xxxx
xxxx
AYWWG
AYWWG
STYLE 1
STYLE 2
xxxx
A
Y
= Specific Device Code
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON04079D
SMA
PAGE 1 OF 1
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