NSD070AL [ONSEMI]
Switching Diode;
| 型号： | NSD070AL |
| 厂家： | 
ONSEMI |
| 描述： | Switching Diode |
| 文件： | 总4页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSD070AL
Switching Diode
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
www.onsemi.com
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
70
Unit
V
Reverse Voltage
V
R
CASE 318
SOT−23
Forward Current (DC)
I
200
500
mA
mA
F
Non−Repetitive Peak Forward Current
t = 1.0 s
I
FSM
CATHODE
CATHODE
2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
3
ANODE
MARKING DIAGRAM
JY MG
G
JY = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
NSD070ALT1G
SOT−23
3,000 /
(Pb−Free)
Tape & Reel
NSVD070ALT1G
SOT−23
3,000 /
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
November, 2015 − Rev. 1
NSD070AL/D
NSD070AL
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Device Dissipation @ T = 25°C
R
P
−
−
−
−
556
225
°C/W
mW
q
JA
A
D
Junction and Storage Temperature Range
T , T
−
−
−65 to +150
°C
J
stg
1. FR−4 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(V = 70 Vdc)
R
V
(BR)
V
70
−
−
Reverse Voltage Leakage Current
I
R
nA
(V = 70 Vdc)
−
−
−
−
5.0
80
R
(V = 70 Vdc, T = 150°C)
R
J
Diode Capacitance
(V = 0 V, f = 1.0 MHz)
R
C
V
pF
D
−
1.0
2.0
Forward Voltage
mV
F
(I = 1.0 mA)
−
−
−
−
−
−
−
−
900
1000
1100
1250
F
(I = 10 mA)
F
(I = 50 mA)
F
(I = 150 mA)
F
Reverse Recovery Time
t
rr
ms
(I = I = 10 mA) (Figure 1)
−
−
3.0
F
R
820 W
I
F
+10 V
t
r
t
p
t
2.0 k
0.1 mF
I
F
t
t
100 mH
rr
10%
90%
0.1 mF
DUT
i
= 1.0 mA
R(REC)
50 W OUTPUT
PULSE
50 W INPUT
SAMPLING
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; MEASURED
GENERATOR
OSCILLOSCOPE
INPUT SIGNAL
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2
NSD070AL
TYPICAL CHARACTERISTICS
1,000
1.2
1.0
T = 25°C
A
100
10
1
0.8
0.6
−65°C
150°C 25°C
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
60
70
80
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 2. Forward Voltage
Figure 3. Capacitance
www.onsemi.com
3
NSD070AL
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
SEE VIEW C
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
E
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
−−−
MAX
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
10°
c
1
2
b
0.25
e
q
A
H
E
q
L
A1
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
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NSD070AL/D
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