NSD350H [ONSEMI]
High Voltage Switching Diode;
| 型号： | NSD350H |
| 厂家： | 
ONSEMI |
| 描述： | High Voltage Switching Diode |
| 文件： | 总4页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSD350H
High Voltage Switching
Diode
The NSD350H is a high voltage switching diode in a SOD−323
surface mount package.
Features
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• Small Footprint Package, SOD−323
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
1
2
CATHODE
ANODE
• Pb−free Device, Halogen Free/BFR Free and are RoHS Compliant
MARKING
DIAGRAM
Typical Applications
• Flat Panel TVs
• Power Supply
SOD−323
CASE 477
STYLE 1
AJ MG
• Industrial
G
• Wireless Handsets
• Automotive Modules
AJ = Specific Device Code
M
= Date Code
G
= Pb−Free Package
MAXIMUM RATINGS Single Diode (T = 25°C)
A
Rating
Symbol
Max
350
200
Unit
V
(Note: Microdot may be in either location)
Reverse Voltage
V
R
Forward Current (DC)
I
F
mA
A
ORDERING INFORMATION
Non−Repetitive Peak Forward Current
I
FSM
†
Device
Package
Shipping
(Square Wave, T = 25°C prior to surge)
J
t = 10 ꢀ s
t = 100 ꢀ s
t = 1 ms
12
5
2
NSD350HT1G
SOD−323
(Pb−Free)
3000 / Tape &
Reel
NSVD350HT1G
1.5
t = 10 ms
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P
D
(Note 1)
T = 25°C
250
2
mW
mW/°C
A
Derate above 25°C
Thermal Resistance,
Junction to Ambient
R
500
°C/W
ꢁ
JA
(Note 1)
Junction and Storage Temperature
Range
T , T
−55 to
+150
°C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. FR−4 100 mm 2 oz Cu PCB
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
April, 2015 − Rev. 0
NSD350H/D
NSD350H
Table 1. ELECTRICAL CHARACTERISTICS (T = 25°C)
A
Characteristic
Reverse Breakdown Voltage (I = 10 µA)
Symbol
Min
Typ
Max
Unit
V
V
(BR)R
350
R
Reverse Leakage (V = 300 V)
I
I
150
5
nA
ꢀ A
V
R
R
Reverse Leakage (V = 350 V)
R
R
Forward Voltage (I = 100 mA)
V
1.1
5.0
F
F
Total Capacitance (V = 0 V, f = 1.0 MHz)
C
pF
ns
R
T
Reverse Recovery Time (I = I = 10 mA, I (rec) = 1.0 mA, Figure 1)
t
rr
55
F
R
R
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820
ꢂ
+10 V
2 k
0.1 ꢀ F
I
F
t
r
t
p
T
I
F
100 ꢀ H
t
T
10%
90%
rr
0.1 ꢀ F
DUT
50 ꢂ OUTPUT
PULSE
GENERATOR
50 ꢂ INPUT
SAMPLING
OSCILLOSCOPE
i
= 1 mA
R(REC)
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; measured
INPUT SIGNAL
F
R
at i
= 1 mA)
R(REC)
Notes: 1. A 2.0 kꢂ variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
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2
NSD350H
TYPICAL CHARACTERISTICS
1E−04
1E−05
1E−06
1E−07
1E−08
1E−09
150°C
150°C
125°C
85°C
100
125°C
25°C
10
1
−55°C
1E−10
1E−11
85°C 25°C
0.5 0.6 0.7 0.8 0.9 1.0 1.1
V , FORWARD VOLTAGE (V)
−55°C
0
50
100
150
200
250
300
350
0.2 0.3 0.4
V , REVERSE VOLTAGE (V)
R
F
Figure 2. Reverse Leakage Current
Figure 3. Forward Voltage
2.0
1.8
T = 25°C
J
1.6
1.4
1.2
1.0
0.8
0.6
0.4
f = 1 MHz
0.2
0
0
5
10
15
20
25
30
V , REVERSE VOLTAGE (V)
R
Figure 4. Total Capacitance
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3
NSD350H
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
H
E
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
D
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
1
E
b
2
MILLIMETERS
DIM MIN NOM MAX
0.80
INCHES
NOM MAX
1.00 0.031 0.035 0.040
0.10 0.000 0.002 0.004
0.006 REF
MIN
A
0.90
0.05
A1 0.00
A3
A
A3
0.15 REF
0.32
0.12 0.177 0.003 0.005 0.007
1.70
1.25
b
C
D
E
L
0.25
0.089
1.60
1.15
0.08
2.30
0.4 0.010 0.012 0.016
1.80 0.062 0.066 0.070
1.35 0.045 0.049 0.053
0.003
H
2.50
2.70 0.090 0.098 0.105
E
L
A1
C
NOTE 5
STYLE 1:
NOTE 3
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
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copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
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For additional information, please contact your local
Sales Representative
NSD350H/D
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