NSIC2050JBT3G [ONSEMI]
LED 驱动器，恒流稳流器，120 V，50 mA，±15%，用于交流离线应用;
| 型号： | NSIC2050JBT3G |
| 厂家： | 
ONSEMI |
| 描述： | LED 驱动器，恒流稳流器，120 V，50 mA，±15%，用于交流离线应用 驱动 接口集成电路 驱动器 |
| 文件： | 总9页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSIC2050JBT3G
Constant Current Regulator
& LED Driver for A/C off-line
Applications
120 V, 50 mA + 15%, 3 W Package
http://onsemi.com
The linear constant current regulator (CCR) is a simple, economical
and robust device designed to provide a cost−effective solution for
regulating current in LEDs (similar to Constant Current Diode, CCD).
The CCR is based on Self−Biased Transistor (SBT) technology and
regulates current over a wide voltage range. It is designed with a
negative temperature coefficient to protect LEDs from thermal
runaway at extreme voltages and currents.
I
= 50 mA
reg(SS)
@ Vak = 7.5 V
Anode 2
The CCR turns on immediately and is at 20% of regulation with
only 0.5 V Vak. It requires no external components allowing it to be
designed as a high or low−side regulator.
The 120 V anode−cathode voltage rating is designed to withstand
the high peak voltage incurred in A/C offline applications. The high
anode−cathode voltage rating withstands surges common in
Automotive, Industrial and Commercial Signage applications.
Cathode 1
1
Features
• Robust Power Package: 2.3 W
• Wide Operating Voltage Range
• Immediate Turn-On
2
SMB
CASE 403A
• Voltage Surge Suppressing − Protecting LEDs
• UL94−V0 Certified
MARKING DIAGRAM
• SBT (Self−Biased Transistor) Technology
• Negative Temperature Coefficient
• Also available in 30 mA (NSIC2030JBT1G) and 20 mA
(NSIC2020JBT1G)
AYWW
1
2
2050JG
G
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
2050J = Specific Device Code
A
= Assembly Location
= Year
Y
WW
G
= Work Week
= Pb−Free Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
(Note: Microdot may be in either location)
Typical Applications and Reference/Design Documents
• Automobile: Chevron Side Mirror Markers, Cluster, Displays &
Instruments Backlighting, CHMSL, Map Light
• AC Lighting Panels, Display Signage, Decorative Lighting, Channel
Lettering
ORDERING INFORMATION
†
Device
Package
Shipping
NSIC2050JBT3G
SMB
(Pb−Free)
2500 / Tape &
Reel
• Application Note AND8349/D – Automotive CHMSL
• Application Notes AND8391/D, AND9008/D − Power Dissipation
NSVC2050JBT3G
SMB
(Pb−Free)
2500 / Tape &
Reel
Considerations
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
• Application Note AND8433/D – A/C Application
• Application Note AND8492/D – A/C Capacitive Drop Design
• Application Note AND9098/D − Protecting a CCR from ISO 7637−2
Pulse 2A and Reverse Pulses
• Design Note DN05013 – A/C Design
• Design Note DN06065 – A/C Design with PFC
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
April, 2014 − Rev. 1
NSIC2050JB/D
NSIC2050JBT3G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Symbol
Value
120
Unit
V
Anode−Cathode Voltage
Reverse Voltage
Vak Max
V
500
mV
°C
R
Operating Junction and Storage Temperature Range
T , T
J
−55 to +175
stg
ESD Rating: Human Body Model
Machine Model
ESD
Class 3A (4000 V)
Class C (400 V)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Steady State Current @ Vak = 7.5 V (Note 1)
Voltage Overhead (Note 2)
Symbol
Min
Typ
50
Max
Unit
mA
V
I
42.5
57.5
reg(SS)
V
1.8
overhead
Pulse Current @ Vak = 7.5 V (Note 3)
I
48.1
57.4
66.7
mA
reg(P)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. I
2. V
steady state is the voltage (Vak) applied for a time duration ≥ 80 sec, using 100 mm , 1 oz. Cu (or equivalent), in still air.
reg(SS)
= V − V
. V
is typical value for 80% I
.
overhead
in
LEDs overhead
reg(SS)
3. I
non−repetitive pulse test. Pulse width t ≤ 360 msec.
reg(P)
Figure 1. CCR Voltage−Current Characteristic
http://onsemi.com
2
NSIC2050JBT3G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 1) T = 25°C
P
D
1210
8.0
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Reference, Junction−to−Tab (Note 1)
R
124
°C/W
°C/W
θJA
17.5
R
JL
ψ
Total Device Dissipation (Note 2) T = 25°C
P
D
1282
8.5
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Reference, Junction−to−Tab (Note 2)
R
R
117
°C/W
°C/W
θJA
JL
18.2
ψ
Total Device Dissipation (Note 3) T = 25°C
P
D
1667
11.1
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 3)
Thermal Reference, Junction−to−Tab (Note 3)
R
R
90
°C/W
°C/W
θJA
JL
16.4
ψ
Total Device Dissipation (Note 4) T = 25°C
P
D
1765
11.8
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 4)
Thermal Reference, Junction−to−Tab (Note 4)
R
R
85
°C/W
°C/W
θJA
JL
16.7
ψ
Total Device Dissipation (Note 5) T = 25°C
P
D
1948
13
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 5)
Thermal Reference, Junction−to−Tab (Note 5)
R
R
77
°C/W
°C/W
θJA
JL
15.5
ψ
Total Device Dissipation (Note 6) T = 25°C
P
D
2055
12.7
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 6)
Thermal Reference, Junction−to−Tab (Note 6)
R
R
73
°C/W
°C/W
θJA
JL
15.6
ψ
Total Device Dissipation (Note 7) T = 25°C
P
D
2149
14.3
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 7)
Thermal Reference, Junction−to−Tab (Note 7)
R
R
69.8
14.8
°C/W
°C/W
θJA
JL
ψ
Total Device Dissipation (Note 8) T = 25°C
P
D
2269
15.1
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 8)
Thermal Reference, Junction−to−Tab (Note 8)
R
R
66.1
14.8
°C/W
°C/W
θJA
JL
ψ
Total Device Dissipation (Note 9) T = 25°C
P
D
2609
17.4
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 9)
Thermal Reference, Junction−to−Tab (Note 9)
R
R
57.5
13.9
°C/W
°C/W
θJA
JL
ψ
Total Device Dissipation (Note 10) T = 25°C
P
D
2500
16.7
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 10)
Thermal Reference, Junction−to−Tab (Note 10)
R
R
60
16
°C/W
°C/W
θJA
JL
ψ
Total Device Dissipation (Note 11) T = 25°C
P
D
3000
20
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 11)
Thermal Reference, Junction−to−Tab (Note 11)
R
R
50
16
°C/W
°C/W
θJA
JL
ψ
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
2
1. 100 mm , 1 oz. Cu, still air.
2
2. 100 mm , 2 oz. Cu, still air.
2
3. 300 mm , 1 oz. Cu, still air.
2
4. 300 mm , 2 oz. Cu, still air.
2
5. 500 mm , 1 oz. Cu, still air.
2
6. 500 mm , 2 oz. Cu, still air.
2
7. 700 mm , 1 oz. Cu, still air.
2
8. 700 mm , 2 oz. Cu, still air.
2
9. 1000 mm , 3 oz. Cu, still air.
2
10.400 mm , PCB is DENKA K1, 1.5 mm Al, 2kV Thermally conductive dielectric, 2 oz. Cu, or equivalent, still air.
2
11. 900 mm , PCB is DENKA K1, 1.5 mm Al, 2kV Thermally conductive dielectric, 2 oz. Cu, or equivalent, still air.
http://onsemi.com
3
NSIC2050JBT3G
TYPICAL PERFORMANCE CURVES
(Minimum FR−4 @ 100 mm2, 1 oz. Copper Trace, Still Air)
70
60
50
40
30
20
10
0
65
T = 25°C
A
T = −55°C
A
60
≈ −0.224 mA/°C
T = 25°C
A
55
≈ −0.130 mA/°C
T = 85°C
A
50
≈ −0.130 mA/°C
45
T = 125°C
A
40
T
, maximum die temperature
2
J(max)
limit 175°C (100 mm , 1 oz Cu)
35
30
25
Non−Repetitive Pulse Test
10 11 12 13 14 15
DC Test Steady State, Still Air
10 11 12 13 14 15
Vak, ANODE−CATHODE VOLTAGE (V)
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
8
9
Vak, ANODE−CATHODE VOLTAGE (V)
Figure 2. Steady State Current (Ireg(SS)) vs.
Anode−Cathode Voltage (Vak)
Figure 3. Pulse Current (Ireg(P)) vs.
Anode−Cathode Voltage (Vak)
58
57
58
56
54
52
50
48
46
44
42
Vak @ 7.5 V
T = 25°C
Vak @ 7.5 V
T = 25°C
A
A
56
55
54
53
52
51
50
49
0
10
20
30
40
50
60
70
80
48 50 52 54 56 58 60 62 64 66 68
I , PULSE CURRENT (mA)
reg(P)
TIME (s)
Figure 4. Steady State Current vs. Pulse
Current Testing
Figure 5. Current Regulation vs. Time
3000
2500
2000
1500
1000
500
4500
4000
3500
3000
2500
2000
1500
1000
2
2
500 mm /2 oz
DENKA K1, 900 mm /2 oz
FR−4 Board
2
500 mm /1 oz
2
FR−4, 1000 mm /3 oz
2
300 mm /2 oz
2
DENKA K1, 400 mm /2 oz
2
2
300 mm /1 oz
FR−4, 700 mm /2 oz
2
100 mm /2 oz
2
FR−4, 700 mm /1 oz
2
500
0
100 mm /1 oz
0
−40 −20
0
20
40
60
80
100 120
−40 −20
0
20
40
60
80
100 120
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 6. Power Dissipation vs. Ambient
Figure 7. Power Dissipation vs. Ambient
Temperature @ TJ = 1755C: Small Footprint
Temperature @ TJ = 1755C: Large Footprint
http://onsemi.com
4
NSIC2050JBT3G
APPLICATIONS INFORMATION
The CCR is a self biased transistor designed to regulate the
not exceed 175°C. The determination will depend on the
thermal pad it is mounted on, the ambient temperature, the
pulse duration, pulse shape and repetition.
current through itself and any devices in series with it. The
device has a slight negative temperature coefficient, as
shown in Figure 2 – Tri Temp. (i.e. if the temperature
increases the current will decrease). This negative
temperature coefficient will protect the LEDS by reducing
the current as temperature rises.
The CCR turns on immediately and is typically at 20% of
regulation with only 0.5 V across it.
The device is capable of handling voltage for short
durations of up to 120 V so long as the die temperature does
AC Applications
The CCR is a DC device; however, it can be used with full
wave rectified AC as shown in application notes
AND8433/D and AND8492/D and design notes
DN05013/D and DN06065/D. Figure 8 shows the basic
circuit configuration.
Figure 8. Basic AC Application
Single LED String
The CCR can be placed in series with LEDs as a High Side
or a Low Side Driver. The number of the LEDs can vary
from one to an unlimited number. The designer needs to
calculate the maximum voltage across the CCR by taking the
maximum input voltage less the voltage across the LED
string (Figures 9 and 10).
Figure 10.
Figure 9.
http://onsemi.com
5
NSIC2050JBT3G
Higher Current LED Strings
Dimming using PWM
Two or more fixed current CCRs can be connected in
parallel. The current through them is additive (Figure 11).
The dimming of an LED string can be easily achieved by
placing a BJT in series with the CCR (Figure 13).
Figure 13.
The method of pulsing the current through the LEDs is
known as Pulse Width Modulation (PWM) and has become
the preferred method of changing the light level. LEDs being
a silicon device, turn on and off rapidly in response to the
current through them being turned on and off. The switching
time is in the order of 100 nanoseconds, this equates to a
maximum frequency of 10 Mhz, and applications will
typically operate from a 100 Hz to 100 kHz. Below 100 Hz
the human eye will detect a flicker from the light emitted
from the LEDs. Between 500 Hz and 20 kHz the circuit may
generate audible sound. Dimming is achieved by turning the
LEDs on and off for a portion of a single cycle. This on/off
cycle is called the Duty cycle (D) and is expressed by the
amount of time the LEDs are on (Ton) divided by the total
time of an on/off cycle (Ts) (Figure 14).
Figure 11.
Other Currents
The adjustable CCR can be placed in parallel with any
other CCR to obtain a desired current. The adjustable CCR
provides the ability to adjust the current as LED efficiency
increases to obtain the same light output (Figure 12).
Figure 14.
Figure 12.
http://onsemi.com
6
NSIC2050JBT3G
The current through the LEDs is constant during the period
slope of the CCR on/off current can be controlled by the
values of R1 and C1.
they are turned on resulting in the light being consistent with
no shift in chromaticity (color). The brightness is in proportion
to the percentage of time that the LEDs are turned on.
Figure 15 is a typical response of Luminance vs Duty Cycle.
6000
The selected delay / slope will impact the frequency that
is selected to operate the dimming circuit. The longer the
delay, the lower the frequency will be. The delay time should
not be less than a 10:1 ratio of the minimum on time. The
frequency is also impacted by the resolution and dimming
steps that are required. With a delay of 1.5 microseconds on
the rise and the fall edges, the minimum on time would be
30 microseconds. If the design called for a resolution of 100
dimming steps, then a total duty cycle time (Ts) of 3
milliseconds or a frequency of 333 Hz will be required.
5000
4000
3000
2000
Thermal Considerations
As power in the CCR increases, it might become
necessary to provide some thermal relief. The maximum
power dissipation supported by the device is dependent
upon board design and layout. Mounting pad configuration
on the PCB, the board material, and the ambient temperature
affect the rate of junction temperature rise for the part. When
the device has good thermal conductivity through the PCB,
the junction temperature will be relatively low with high
power applications. The maximum dissipation the device
can handle is given by:
Lux
Linear
1000
0
0
10 20 30 40 50
60 70 80 90 100
DUTY CYCLE (%)
Figure 15. Luminous Emmitance vs. Duty Cycle
Reducing EMI
Designers creating circuits switching medium to high
currents need to be concerned about Electromagnetic
Interference (EMI). The LEDs and the CCR switch
extremely fast, less than 100 nanoseconds. To help eliminate
EMI, a capacitor can be added to the circuit across R2.
(Figure 13) This will cause the slope on the rising and falling
edge on the current through the circuit to be extended. The
TJ(MAX) * TA
PD(MAX)
+
RqJA
Referring to the thermal table on page 2 the appropriate
for the circuit board can be selected.
R
qJA
http://onsemi.com
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
DATE 19 JUL 2012
SCALE 1:1
SCALE 1:1
Polarity Band
Non−Polarity Band
H
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
E
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
H
E
L
L1
MIN
1.95
0.05
1.96
0.15
3.30
4.06
5.21
0.76
NOM
2.30
0.10
2.03
0.23
3.56
4.32
5.44
1.02
MAX
MIN
NOM
0.091
0.004
0.080
0.009
0.140
0.170
0.214
0.040
MAX
0.097
0.008
0.087
0.012
0.156
0.181
0.220
0.063
2.47
0.20
2.20
0.31
3.95
4.60
5.60
1.60
0.077
0.002
0.077
0.006
0.130
0.160
0.205
0.030
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
0.51 REF
0.020 REF
GENERIC
MARKING DIAGRAM*
A
A1
c
L
L1
AYWW
AYWW
XXXXXG
G
XXXXXG
G
SOLDERING FOOTPRINT*
Polarity Band
Non−Polarity Band
2.261
0.089
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
2.743
0.108
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
2.159
0.085
mm
inches
ǒ
Ǔ
SCALE 8:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42669B
SMB
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
©2020 ICPDF网 联系我们和版权申明