NSM80101MT1G [ONSEMI]
NPN Transistor with Dual Series Switching Diode;
| 型号： | NSM80101MT1G |
| 厂家： | 
ONSEMI |
| 描述： | NPN Transistor with Dual Series Switching Diode |
| 文件： | 总7页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSM80101MT1G
NPN Transistor with Dual
Series Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
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• LCD Control Board
• High Speed Switching
• High Voltage Switching
NPN Transistor with Dual Series
Switching Diode
MAXIMUM RATINGS − PNP TRANSISTOR
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
80
Unit
Vdc
6
Q1
1
5
4
V
CEO
V
CBO
V
EBO
80
Vdc
D1
D2
6.0
Vdc
Collector Current − Continuous
I
C
500
mAdc
2
3
MAXIMUM RATINGS − SWITCHING DIODE
Rating
Symbol
Value
100
Unit
V
Reverse Voltage
Forward Current
V
R
I
200
mA
A
F
4
5
6
SC−74
Non−Repetitive Peak Forward Current
(Square Wave, T = 25°C prior to
surge)
I
FSM
CASE 318F
3
J
2
1
t < 1 sec
t = 1 msec
1.0
20
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
3NP MG
ESD RATINGS
G
Rating
Class
Value
Electrostatic Discharge
HBM
MM
3A
M4
4000 V ≤ Failure < 8000 V
3NP
M
= Device Code
= Date Code*
Failure > 400 V
G
= Pb−Free Package
THERMAL CHARACTERISTICS
Rating
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Symbol
Max
400
313
Unit
Total Device Dissipation FR−5 Board,
P
D
(Note 1) @ T = 25°C
mW
mW/°C
A
Derate above 25°C
Thermal Resistance from
R
°C/W
ORDERING INFORMATION
q
JA
Junction−to−Ambient (Note 1)
†
Device
Package
Shipping
Total Device Dissipation FR−5 Board
P
D
(Note 2) T = 25°C
270
463
mW
mW/°C
NSM80101MT1G
SC−74
3000 /
A
Derate above 25°C
(Pb−Free)
Tape & Reel
Thermal Resistance,
Junction−to−Ambient (Note 2)
R
°C/W
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
q
JA
Junction and Storage
Temperature Range
T , T
−55 to +150
°C
J
stg
2
1. FR−5 = 650 mm pad, 2.0 oz Cu.
2
2. FR−5 = 10 mm pad, 2.0 oz Cu.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
December, 2013 − Rev. 3
NSM80101M/D
NSM80101MT1G
Q1: NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 3)
V
V
V
(BR)CEO
(I = 1.0 mA, I = 0)
80
6.0
−
−
−
C
B
Emitter−Base Breakdown Voltage
Collector Cutoff Current
V
(BR)EBO
(I = 100 mA, I = 0)
E
C
I
mA
mA
CES
(V = 60 V, I = 0)
0.1
0.1
CE
B
Collector Cutoff Current
I
CBO
(V = 80 V, I = 0)
−
CB
E
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
−
V
V
FE
(I = 10 mA, V = 1.0 V)
120
−
−
C
CE
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
V
CE(sat)
(I = 100 mA, I = 10 mA)
0.3
1.2
C
B
V
BE(sat)
(I = 10 mA, V = 5.0 Vdc)
−
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
T
MHz
(I = 10 mA, V = 5.0 V, f = 100 MHz)
150
−
C
CE
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
D1, D2: SWITCHING DIODE (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Reverse Breakdown Voltage
V
(BR)
75
−
V
Reverse Voltage Leakage Current
I
R
mA
(V = 75 V)
J
−
−
−
1.0
30
100
R
(V = 20 V, T = 150°C)
R
R
(V = 75 V, T = 150°C)
J
Diode Capacitance
Forward Voltage
C
V
pF
D
(V = 0 V, f = 1.0 MHz)
−
2.0
R
mV
F
(I = 1.0 mA)
−
−
−
−
715
855
1000
1250
F
(I = 10 mA)
F
(I = 50 mA)
F
(I = 150 mA)
F
Reverse Recovery Time
t
ns
V
rr
(I = I = 10 mA, i
= 1.0 mA, R = 100 W)
−
6.0
F
R
R(REC)
L
Forward Recovery Voltage
V
FR
(I = 10 mA, t = 20 ns)
−
1.75
F
r
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NSM80101MT1G
TYPICAL CHARACTERISTICS
300
200
80
60
T = 25°C
J
V
= 2.0 V
CE
T = 25°C
J
40
C
ibo
20
100
70
10
8.0
50
C
6.0
obo
30
4.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200
0.1 0.2
0.5 1.0 2.0
5.0
10
20
50 100
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Current−Gain — Bandwidth Product
Figure 2. Capacitance
400
200
1.0 k
700
500
T = 125°C
J
V
CE
= 1.0 V
t
s
300
200
25°C
-55°C
100
70
t
100
80
f
50
V
= 40 V
CC
I /I = 10
30
20
t
r
C B
60
I = I
B1 B2
t @ V
d
= 0.5 V
BE(off)
T = 25°C
J
40
10
0.5 1.0 2.0 3.0 5.0 10
20 30 50 100 200 300 500
5.0 7.0 10
20 30
50 70 100
200 300
500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 4. DC Current Gain
Figure 3. Switching Time
1
1.1
I /I = 10
C
B
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 10
C
B
150°C
−55°C
25°C
25°C
−55°C
0.1
150°C
0.3
0.2
0.01
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 5. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 6. Base Emitter Saturation Voltage vs.
Collector Current
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3
NSM80101MT1G
TYPICAL CHARACTERISTICS
1.0
0.8
1.2
1.1
1.0
T = 25°C
J
V
= 1 V
CE
I =
C
250 mA
I =
C
100 mA
I =
C
I =
C
500 mA
0.9
0.8
0.7
0.6
0.5
0.4
50 mA
0.6
−55°C
25°C
0.4
I =
C
10 mA
150°C
0.2
0
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.05 0.1 0.2
0.5
1.0 2.0
5.0
10
20
50
I , COLLECTOR CURRENT (A)
C
I , BASE CURRENT (mA)
B
Figure 7. Base Emitter Voltage vs. Collector
Current
Figure 8. Collector Saturation Region
-0.8
-1.2
-1.6
-2.0
1
1 S
1 mS
100 mS
10 mS
0.1
R
for V
Thermal Limit
q
VB
BE
0.01
-2.4
-2.8
0.001
0.1
1
10
100
0.5 1.0 2.0
5.0
10
20
50
100 200
500
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Figure 10. Safe Operating Area
Figure 9. Base−Emitter Temperature
Coefficient
400
300
200
100
0
0
20
40
60
80
100
120
140
160
TEMPERATURE (°C)
Figure 11. Operating Temperature Derating
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4
NSM80101MT1G
TYPICAL CHARACTERISTICS
100
1000
100
10
T = 150°C
A
10
1.0
T = 125°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 85°C
A
T = 55°C
A
T = 55°C
A
0.1
T = 25°C
A
1
0.01
T = −40°C
A
T = 25°C
A
T = −55°C
A
0.1
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
10
20
30
40
50
60
70
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 12. Forward Voltage
Figure 13. Leakage Current
0.61
0.59
0.57
0.55
0.53
0.51
0.49
0.47
0.45
100
75
50
25
0
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
V , REVERSE VOLTAGE (V)
R
T , DERATED AMBIENT TEMPERATURE (°C)
A
Figure 15. Diode Power Dissipation Curve
Figure 14. Capacitance
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−74
CASE 318F
ISSUE P
6
1
DATE 07 OCT 2021
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
XXX
M
= Specific Device Code
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
PIN 1. CATHODE
2. ANODE
STYLE 2:
STYLE 3:
PIN 1. EMITTER 1
2. BASE 1
STYLE 4:
STYLE 5:
PIN 1. CHANNEL 1
2. ANODE
STYLE 6:
PIN 1. CATHODE
2. ANODE
PIN 1. NO CONNECTION
2. COLLECTOR
3. EMITTER
PIN 1. COLLECTOR 2
2. EMITTER 1/EMITTER 2
3. COLLECTOR 1
4. EMITTER 3
5. BASE 1/BASE 2/COLLECTOR 3
6. BASE 3
3. CATHODE
4. CATHODE
5. ANODE
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
3. CHANNEL 2
4. CHANNEL 3
5. CATHODE
6. CHANNEL 4
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
4. NO CONNECTION
5. COLLECTOR
6. BASE
6. CATHODE
6. COLLECTOR 1
STYLE 10:
STYLE 11:
PIN 1. EMITTER
2. BASE
STYLE 7:
PIN 1. SOURCE 1
2. GATE 1
STYLE 8:
PIN 1. EMITTER 1
2. BASE 2
STYLE 9:
PIN 1. EMITTER 2
2. BASE 2
PIN 1. ANODE/CATHODE
2. BASE
3. EMITTER
3. ANODE/CATHODE
3. DRAIN 2
4. SOURCE 2
5. GATE 2
3. COLLECTOR 2
4. EMITTER 2
5. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
4. COLLECTOR
5. ANODE
4. ANODE
5. CATHODE
6. CATHODE
6. COLLECTOR
6. DRAIN 1
6. COLLECTOR 1
6. COLLECTOR 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42973B
SC−74
PAGE 1 OF 1
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