NSP8814 [ONSEMI]
Transient Voltage Suppressors;
| 型号： | NSP8814 |
| 厂家： | 
ONSEMI |
| 描述： | Transient Voltage Suppressors |
| 文件： | 总7页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSP8814, NSP8818
Transient Voltage
Suppressors
Low Capacitance Surge Protection for
High Speed Data
www.onsemi.com
MARKING
The NSP8814 and NSP8818 transient voltage suppressors are
designed specifically to protect 10/100 and GbE Ethernet signals from
high levels of surge current. Low clamping voltage under high surge
conditions make this device an ideal solution for protecting voltage
sensitive lines leading to Ethernet transceiver chips. Low capacitance
combined with flow-through style packaging allows for easy PCB
layout and matched trace lengths necessary to maintain consistent
impedance between high-speed differential lines. The integrated 4 and
8 lines of protection in flow-thru type packages offer a simplified
solution with premier performance for 10/100 and GbE Ethernet
applications.
DIAGRAMS
4C M
G
UDFN8
CASE 506CV
4D M
G
UDFN10
CASE 506CU
Features
• Protection for the Following IEC Standards:
IEC 61000−4−2 (ESD) 30 kV (Contact)
IEC61000−4−5 (Lightning) 35 A (8/20 ms)
• Flow−Thru Routing Scheme
XX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
• 2 pF Max, I/O to I/O
• UL Flammability Rating of 94 V−0
• This is a Pb−Free Device
ORDERING INFORMATION
Device
NSP8814MUTAG
Package
Shipping
3000 / Tape & Reel
Typical Applications
UDFN8
(Pb−Free)
• 10/100 and GbE Ethernet
• MagJacks® / Integrated Magnetics
• Notebooks/Desktops/Servers
NSP8818MUTAG UDFN10 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
−55 to +125
−55 to +150
260
Unit
°C
Operating Junction Temperature Range
Storage Temperature Range
T
J
T
stg
°C
Lead Solder Temperature −
Maximum (10 Seconds)
T
L
°C
IEC 61000−4−2 Contact (ESD)
IEC 61000−4−2 Air (ESD)
ESD
30
30
kV
kV
Maximum Peak Pulse Current
I
PP
A
8/20 ms @ T = 25°C
35
20
A
10/700 ms @ T = 25°C
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See Application Note AND8308/D for further description of survivability specs.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
February, 2017 − Rev. 0
NSP8814/D
NSP8814, NSP8818
NSP8814
GND
Pin2Pin3 Pin6 Pin7
GND
I/O
GND
I/O
I/O
I/O
GND
GND
GND
Pins 1, 4, 5, 8
Note: Common GND – Only minimum of 1 GND connection required
NSP8818
GND
Pin1Pin2 Pin4 Pin5 Pin6 Pin7 Pin9 Pin10
I/O
I/O
=
I/O
I/O
GND
GND
GND
GND
I/O
Pins 3, 8
I/O
I/O
Note: Common GND – Only minimum of 1 GND connection required
I/O
Figure 1. Pin Schematic
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
I
I
PP
Symbol
Parameter
Working Peak Voltage
V
RWM
R
V
DYN
I
Maximum Reverse Leakage Current @ V
R
RWM
V
BR
Breakdown Voltage @ I
V
V
V
T
CL BR RWM
V
I
R
T
I
Test Current
CL
T
I
V
Holding Reverse Voltage
Holding Reverse Current
Dynamic Resistance
Maximum Peak Pulse Current
HOLD
HOLD
R
I
DYN
R
DYN
I
PP
I
PP
Uni−Directional Surge Protection
V
C
Clamping Voltage @ I
PP
V
C
= V
+ (I * R
)
HOLD
PP
DYN
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
A
Parameter
Reverse Working Voltage
Forward Voltage
Symbol
Conditions
Any I/O to GND (Note 1)
I = 10 mA, GND to All IO Pins
Min
Typ
Max
3.0
1.1
5.0
0.5
5.0
6.0
10
Unit
V
RWM
V
V
V
F
0.5
3.2
0.85
3.5
F
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
V
BR
I = 1 mA, I/O to GND
T
V
I
R
V
RWM
= 3.0 V, I/O to GND
mA
V
V
I
PP
I
PP
I
PP
I
PP
= 1 A, Any I/O to GND (8/20 ms pulse)
= 10 A, Any I/O to GND (8/20 ms pulse)
= 25 A, Any I/O to GND (8/20 ms pulse)
= 35 A, Any I/O to GND (8/20 ms pulse)
C
C
C
C
C
Clamping Voltage
V
V
V
V
V
Clamping Voltage
V
Clamping Voltage
15
V
Clamping Voltage
IEC61000−4−2, 8 kV Contact
See Figures 7 and 8
1.5
V
Junction Capacitance
Junction Capacitance
C
C
V
R
V
R
= 0 V, f = 1 MHz between I/O Pins
2.0
5.0
pF
pF
J
J
= 0 V, f = 1 MHz between I/O Pins and GND
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Surge protection devices are normally selected according to the working peak reverse voltage (V
than the DC or continuous peak operating voltage level.
), which should be equal or greater
RWM
www.onsemi.com
2
NSP8814, NSP8818
20
t = rise time to peak value [8 ms]
t = decay time to half value [20 ms]
f
r
18
16
14
12
10
8
Peak
Value
100
IO−IO
Half Value
50
0
IO−GND
6
4
2
0
0 t
r
t
f
0
5
10
15
I
20
25
30
35
(A)
TIME (ms)
pk
Figure 2. IEC61000−4−5 8/20 ms Pulse
Figure 3. Clamping Voltage vs. Peak Pulse Current
Waveform
(tp = 8/20 ms per Figure 2)
20
t = rise time to peak value [10 ms]
t = decay time to half value [700 ms]
f
r
18
16
14
12
10
8
Peak
Value
100
IO−IO
Half Value
50
0
6
IO−GND
4
2
0
0 t
r
t
f
0
2
4
6
8
10 12
I (A)
pk
14 16 18
20
TIME (ms)
Figure 5. Clamping Voltage vs. Peak Pulse Current
Figure 4. IEC61000−4−5 10/700 ms Pulse
(tp = 10/700 ms per Figure 4)
Waveform
90
80
70
60
50
40
30
20
10
0
10
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
−10
−20
0
20
40
60
80
100
120 140
−20
0
20
40
60
80
100
120 140
TIME (ns)
TIME (ns)
Figure 6. IEC61000−2−4 +8 kV Contact
Clamping Voltage
Figure 7. IEC61000−2−4 −8 kV Contact
Clamping Voltage
www.onsemi.com
3
NSP8814, NSP8818
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
1.E−11
1.E−12
IO−GND
IO−IO
−2
−1
0
1
2
3
4
5
6
0
0.5
1.0
1.5
2.0
(V)
2.5
3.0
3.5
V (V)
V
Bias
Figure 8. IV Characteristics
Figure 9. CV Characteristics
IO−GND
IO−GND
Figure 10. RF Insertion Loss
Figure 11. Capacitance Over Frequency
www.onsemi.com
4
NSP8814, NSP8818
1
2
3
NSP8814
4
5
6
DFN8
7
8
Black = Top Layer
Red = Other Layer
Figure 12. 10/100 Ethernet Layout Diagram and Flow−thru Routing Scheme
1
2
3
NSP8818
4
5
6
DFN10
7
8
Black = Top Layer
Red = Other Layer
Figure 13. GbE Ethernet Layout Diagram and Flow−thru Routing Scheme
www.onsemi.com
5
NSP8814, NSP8818
PACKAGE DIMENSIONS
UDFN8 2.2x2, 0.575P
CASE 506CV
ISSUE A
NOTES:
L
A
B
E
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.25 MM FROM TERMINAL TIP.
L1
PIN ONE
REFERENCE
DETAIL A
ALTERNATE TERMINAL
CONSTRUCTION
MILLIMETERS
2X
DIM MIN
MAX
0.55
0.05
0.10
C
A
A1
A3
b
0.45
0.00
A3
EXPOSED Cu
MOLD CMPD
0.127 REF
0.15 0.25
2.20 BSC
2X
0.10
C
TOP VIEW
D
E
2.00 BSC
0.20 BSC
0.575 BSC
0.40 BSC
A
C
DETAIL B
E3
e
(A3)
0.05
0.05
C
A1
e2
L
9X
DETAIL B
0.25
0.35
0.15
1.05
ALTERNATE
C
L1
L2
0.05
0.95
CONSTRUCTIONS
A1
SEATING
PLANE
SIDE VIEW
RECOMMENDED
MOUNTING FOOTPRINT
E3
e
0.575
0.40
0.20
b
10X
e2
DETAIL A
M
M
C A B
0.10
1
4
PACKAGE
OUTLINE
NOTE 3
C
0.05
2.30
8X
L
1
6X
2X
L2
4X
0.50
0.40
0.22
0.575
0.20
8
5
e2
e
DIMENSIONS: MILLIMETERS
E3
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
6
NSP8814, NSP8818
PACKAGE DIMENSIONS
UDFN10 3.5x2, 0.575P
CASE 506CU
ISSUE O
NOTES:
L
A
B
E
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.25 MM FROM TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
L1
PIN ONE
REFERENCE
DETAIL A
ALTERNATE TERMINAL
CONSTRUCTION
2X
0.10
C
MILLIMETERS
DIM MIN
MAX
0.55
0.05
A3
A
A1
A3
b
0.45
0.00
EXPOSED Cu
MOLD CMPD
2X
0.10
C
TOP VIEW
0.127 REF
0.15 0.25
3.50 BSC
A
C
DETAIL B
D
(A3)
0.05
0.05
C
A1
E
2.00 BSC
0.575 BSC
0.40 BSC
3.10 BSC
e
13X
DETAIL B
e2
e3
L
ALTERNATE
C
CONSTRUCTIONS
0.25
0.35
0.15
1.05
NOTE 4
A1
SEATING
PLANE
L1
L2
0.05
0.95
SIDE VIEW
e3
RECOMMENDED
MOUNTING FOOTPRINT*
e
e2
DETAIL A
1
5
3.50
0.40
2X
0.31
10X
L
8X
0.50
2X
1.10
3X
2.30
L2
10
6
b
13X
PACKAGE
OUTLINE
e2
BOTTOM VIEW
1
M
M
C A B
0.10
0.05
9X
0.22
e
NOTE 3
C
6X 0.575
0.40
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NSP8814/D
相关型号：
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