NSPM2052MUT5G [ONSEMI]
5 V ESD 和浪涌器件，采用 1.6 x 1.0 UDFN 封装;
| 型号： | NSPM2052MUT5G |
| 厂家： | 
ONSEMI |
| 描述： | 5 V ESD 和浪涌器件，采用 1.6 x 1.0 UDFN 封装 |
| 文件： | 总8页 (文件大小：370K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
ESD and Surge Protection
Device
Pin 1
Pin 2
NSPM2052
MARKING
DIAGRAM
Features
• Protection for the following IEC Standards:
IEC61000−4−2 Level 4: 30 kV Contact Discharge
IEC61000−4−5 (Lightning) 120 A (8/20 ms)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
XXM
UDFN3
CASE 517DY
XX
M
= Specific Device Code
= Date Code
MAXIMUM RATINGS
Rating
IEC 61000−4−2 (ESD)
Symbol
Value
Unit
ORDERING INFORMATION
Contact
Air
30
30
kV
†
Device
NSPM2052MUT5G
Package
Shipping
UDFN3
8000 / Tape &
Reel
Operating Junction and Storage
Temperature Range
T , T
−65 to +150
°C
J
stg
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Maximum Peak Pulse Current
I
120
A
PP
8/20 ms @ T = 25°C
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
September, 2021 − Rev. 3
NSPM2052/D
NSPM2052
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
I
I
F
Symbol
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
I
PP
V
C
PP
V
C
V
V
V
Working Peak Reverse Voltage
BR RWM
RWM
V
I
V
F
R
T
I
R
Maximum Reverse Leakage Current @ V
I
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
PP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
A
Parameter
Symbol
Conditions
Min
Typ
Max
5.0
7.0
0.1
8.0
8.5
9.0
400
Unit
V
Reverse Working Voltage
Breakdown Voltage (Note 1)
Reverse Leakage Current
Clamping Voltage (Note 2)
Clamping Voltage (Note 2)
Clamping Voltage (Note 2)
Junction Capacitance
V
RWM
V
BR
I = 1 mA
5.1
V
T
I
R
V
RWM
= 5.0 V
mA
V
V
I
PP
I
PP
I
PP
= 80 A, t = 8 x 20 ms
7.0
7.5
8.0
C
C
C
p
V
V
= 100 A, t = 8 x 20 ms
V
p
= 120 A, t = 8 x 20 ms
V
p
C
V
R
= 0 V, f = 1 MHz
pF
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
2. Non−repetitive current pulse at T = 25°C, per IEC61000−4−5 waveform, See Figure 10.
A
50
40
30
20
10
0
30
20
10
0
−10
−20
−10
−20
−30
−40
−20
0
20
40
60
80
100
120
140
−20
0
20
40
60
80
100
120 140
TIME (ns)
TIME (ns)
Figure 1. ESD Clamping Voltage Screenshot
Figure 2. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Negative 8 kV Contact per IEC61000−4−2
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2
NSPM2052
9
8
7
6
5
4
20
18
16
14
12
10
8
10
9
8
7
6
5
4
3
2
1
0
6
3
4
2
2
0
1
0
10
0
1
2
3
4
5
6
7
8
9
0
20
40
60
80
100
120
140
I
pk
(A)
I
pk
(A)
Figure 3. Positive TLP I−V Curve
Figure 4. Positive Clamping Voltage vs. Peak
Pulse Current (tp = 8/20 ms)
350
300
250
200
150
100
50
0
0
1
2
3
4
5
V
Bias
(V)
Figure 5. CV Characteristics
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3
NSPM2052
50 W Coax
Cable
Transmission Line Pulse (TLP) Measurement
L
Attenuator
S
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 6. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 7 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels. For more information
on TLP measurements and how to interpret them please
refer to AND9007/D.
÷
50 W Coax
Cable
I
M
V
M
10 MW
DUT
V
C
Oscilloscope
Figure 6. Simplified Schematic of a Typical TLP
System
Figure 7. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
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4
NSPM2052
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
I
peak
First Peak
Current
(A)
100%
90%
Test Volt-
age (kV)
Current at
30 ns (A)
Current at
60 ns (A)
Level
1
2
3
4
2
4
6
8
7.5
15
4
8
2
4
6
8
I @ 30 ns
22.5
30
12
16
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
Figure 8. IEC61000−4−2 Spec
Oscilloscope
ESD Gun
TVS
50 W
Cable
50 W
Figure 9. Diagram of ESD Test Setup
ESD Voltage Clamping
clearly defined in the spec how to specify a clamping voltage
at the device level. onsemi has developed a way to examine
the entire voltage waveform across the ESD protection
diode over the time domain of an ESD pulse in the form of
an oscilloscope screenshot, which can be found on the
datasheets for all ESD protection diodes. For more
information on how onsemi creates these screenshots and
how to interpret them please refer to AND8307/D.
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
100
t
r
PEAK VALUE I
@ 8 ms
RSM
90
80
70
60
50
40
30
20
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I /2 @ 20 ms
RSM
t
P
10
0
0
20
40
t, TIME (ms)
60
80
Figure 10. 8 X 20 ms Pulse Waveform
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5
NSPM2052
RECOMMENDED OPTIONAL
MOUNTING FOOTPRINT
2X
1.00
1.70
1
2X
0.58
DIMENSIONS: MILLIMETERS
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN3 1.6x1.0, 0.55P
CASE 517DY
ISSUE O
SCALE 4:1
DATE 17 OCT 2017
NOTES:
A
B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. POSITIONAL TOLERANCE APPLIES TO ALL
THREE PADS.
PIN ONE
INDICATOR
MILLIMETERS
E
DIM MIN
NOM MAX
A
A1
b
b1 0.28
D
E
e
e1
L
0.45
−−−
0.83
0.50
−−−
0.88
0.33
1.60
0.55
0.05
0.93
0.38
1.68
1.08
TOP VIEW
1.52
0.92
NOTE 3 A
1.00
0.05
0.05
C
C
0.55 BSC
1.10 BSC
0.40
0.35
0.45
GENERIC
MARKING DIAGRAM*
SEATING
A1
C
SIDE VIEW
e1
PLANE
XXM
e
XX
M
= Specific Device Code
= Date Code
2
e
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present. Some products may
not follow the Generic Marking.
b
1
3
3X
L
NOTE 3
b1
M
0.07
C A B
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
1.70
1.00
1
0.40
3X
0.58
0.40
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON78220G
UDFN3 1.6X1.0, 0.55P
PAGE 1 OF 1
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