NSPU5201MUTBG [ONSEMI]
ESD and Surge Protection Diode Low Clamping Volatage;
| 型号： | NSPU5201MUTBG |
| 厂家： | 
ONSEMI |
| 描述： | ESD and Surge Protection Diode Low Clamping Volatage |
| 文件： | 总6页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESD and Surge Protection
Diode
Low Clamping Voltage
NSPU5201, NSPU5221
Series
www.onsemi.com
Features
• Unidirectional High Voltage ESD and Surge Protection
• Provides ESD Protection to IEC61000−4−2 Level 4:
30 kV Contact Discharge
UDFN6
CASE 517CS
• Small Package: 1.8 mm x 2.0 mm
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
BLOCK DIAGRAM
APPLICATION DIAGRAM
Vcc (1,2)
Cathode
Anode
MARKING DIAGRAM
GND (6,8)
XX M
G
DAP**
1
GND (5,7)
XX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
**Die Attach Pad on
back of package
(connect to ground)
ORDERING INFORMATION
†
Device
Package
Shipping
NSPU5201MUTBG
UDFN6
(Pb−Free)
3000 / Tape &
Reel
NSPU5221MUTBG
UDFN6
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
March, 2021 − Rev. 2
NSPU5201/D
NSPU5201, NSPU5221 Series
PACKAGE / PINOUT DIAGRAMS
Table 1. PIN DESCRIPTIONS
6−Lead, UDFN8 Package
Description
Top View
(Pins Down View)
Bottom View
(Pins Up View)
Pin
1
Name
1
2
3
4
6
5
V
Cathode
Cathode
No Connect
No Connect
Anode
CC
CC
2
V
XX M
3
N/C
N/C
8
6
7
Pin 1
Marking
4
5
GND
GND
GND
GND
5
1
2 3 4
6
Anode
6−Lead UDFN
7
Anode
8
Anode
ELECTRICAL CHARACTERISTICS
I
Symbol
Parameter
I
F
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
Working Peak Reverse Voltage
RWM
V
C
V
V
BR RWM
I
R
Maximum Reverse Leakage Current @ V
V
RWM
I
R
I
T
V
F
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
QV
Maximum Temperature Coefficient of V
Forward Current
BR
BR
I
PP
I
F
V
F
Forward Voltage @ I
F
Uni−Directional Surge Protection
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2
NSPU5201, NSPU5221 Series
SPECIFICATIONS
Table 2. MAXIMUM RATINGS
Parameter
Rating
Units
°C
Operating Temperature Range
Storage Temperature Range
–55 to +125
–65 to +150
°C
Stresses at or above those listed in Maximum Ratings table may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Also,
due to variations in test equipment, stresses shown above are averages.
ELECTRICAL CHARACTERISTICS
I
V @ I
C PP
PP (A)
Breakdown Voltage
m
m
(8 x 20 s)
(8 x 20 s)
V
BR
V
@ I (mA)
V
C
(V)
I
PP
(A)
V
RWM
(V)
I
R
@ V
ꢀꢁ A)
T
RWM
Device
Max
20
Max
Min
Nom
Max
Min
Max
31.5
33
Marking
Device Name
NSPU5201
AZ
1
1
2
21.7
22.7
23.7
1
1
140
110
20
100
120
NSPU5221
A2
24
25
26
120
22
35
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS (NSPU5221)
Description
Min
Typ
Max
Unit
V
Clamp Voltage
24 A IEC61000−4−5 Surge (8/20 ms) from IO to GND, V = 0 V before
26.8
28.5
V
CLAMP
IN
surge, 25°C
40 A IEC61000−4−5 Surge (8/20 ms) from IO to GND, V = 0 V before
28.3
29.4
30
31
V
V
IN
surge, 25°C
35 A IEC61000−4−5 Surge (8/20 ms) from IO to GND, V = V
IN
RWM
before surge, T = 125°C
A
www.onsemi.com
3
NSPU5201, NSPU5221 Series
TYPICAL CHARACTERISTICS
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ipk (A)
Ipk (A)
Figure 2. NSPU5221 Positive Clamping
Voltage vs. Peak Pulse Current (tp = 8/20 ꢁs)
Figure 1. NSPU5021 Positive Clamping
Voltage vs. Peak Pulse Current (tp = 8/20 ꢁs)
t = rise time to peak value [8 ms]
r
t = decay time to half value [20 ms]
f
Peak
Value
100
Half Value
50
0
0 t
r
t
f
TIME (ms)
Figure 3. IEC61000−4−5 8/20 ꢁs Pulse
Waveform
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN6, 1.8x2, 0.4P
CASE 517CS
ISSUE O
DATE 30 APR 2013
SCALE 4:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
EXPOSED Cu
MOLD CMPD
D
A B
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINALS
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED PAD
AS WELL AS THE TERMINALS.
DETAIL B
ALTERNATE
PIN ONE
REFERENCE
E
CONSTRUCTION
MILLIMETERS
2X
0.10 C
DIM
A
MIN
0.45
0.00
MAX
0.55
0.05
A1
A3
b
L
L
2X
0.10
C
0.125 REF
TOP VIEW
0.15
0.25
1.80 BSC
D
L1
0.35
0.55
0.94
D2
E
DETAIL B
2.00 BSC
A3
DETAIL A
0.74
E2
e
0.05
0.05
C
C
ALTERNATE
0.40 BSC
CONSTRUCTIONS
e1
e2
0.80 BSC
0.95 BSC
A
6X
L
0.20
---
0.40
0.15
A1
L1
SEATING
PLANE
NOTE 4
C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
e/2
e
0.10
C
XX M
DETAIL A
2X
D2
1
6X
b
G
4
1
4
1
0.07 C A B
2X
E2
XX = Specific Device Code
NOTE 3
0.05 C
M
= Date Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
6X
L
0.10
C
6
5
6
5
e1/2
e2
e1
BOTTOM VIEW
RECOMMENDED
MOUNTING FOOTPRINT*
SUPPLEMENTAL
BOTTOM VIEW
0.95
0.40
6X
0.48
PITCH
2X
0.55
PACKAGE
OUTLINE
20X.94
2.20
0.40
PITCH
DIMENSIONS: MILLIMETERS
6X
0.25
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON89602E
UDFN6 1.8X2, 0.4P
PAGE 1 OF 1
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