NSR0240MX2WT5G [ONSEMI]
40 V, 200mA Schottky Barrier Diodes in X2DFN2 & X2DFNW2;
| 型号： | NSR0240MX2WT5G |
| 厂家： | 
ONSEMI |
| 描述： | 40 V, 200mA Schottky Barrier Diodes in X2DFN2 & X2DFNW2 |
| 文件： | 总5页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Schotky Barrier Diode
NSR0240MX2
40 V SCHOTTKY
BARRIER DIODE
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0240MX2 in the X2DFN2 miniature package enables designers
to meet the challenging task of achieving higher efficiency and
meeting reduced space requirements.
1
2
CATHODE
ANODE
MARKING
DIAGRAM
Features
• Very Low Forward Voltage Drop: 460 mV @ 100 mA
• Low Reverse Current: 0.2 mA @ 25 V VR
• 200 mA of Continuous Forward Current
• Very High Switching Speed
R M
X2DFN2
CASE 714AB
• Low Capacitance: CT = 7 pF
R M
• NSR0240MX2WT5G − X2DFNW2 Wettable Flank Package for
Optimal Automated Optical Inspection (AOI)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
X2DFNW2
CASE 711BG
R
M
= Specific Device Code
= Month Code
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
ORDERING INFORMATION
Device
Package
Shipping†
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
NSR0240MX2T5G
X2DFN2
(Pb−Free)
8000 /
Tape &
Reel
NSR0240MX2WT5G
X2DFNW2
(Pb−Free)
Markets
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
• Mobile Handsets & Notebook PCs
• Digital Camera and Camcorders
• GPS
MAXIMUM RATINGS
Rating
Symbol Value
Unit
V
Reverse Voltage
V
40
200
3.0
R
Forward Current (DC)
I
F
mA
A
Non−Repetitive Peak Forward Surge Current,
I
FSM
Square Wave, 10 ms
Repetitive Peak Forward Current,
Square Wave, 1.0 ms, D.C. = 25%
I
1.0
A
FRM
ESD Rating: Human Body Model
Machine Model
ESD
Class 1C
Class A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
March, 2022 − Rev. 3
NSR0240MX2/D
NSR0240MX2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
R
400
300
°C/W
mW
q
JA
Total Power Dissipation @ T = 25°C
P
D
A
Junction and Storage Temperature Range
T , T
−55 to +150
°C
J
stg
2
1. FR−4, 20 mm , 1 oz. Cu.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
I
R
mA
(V = 25 V)
0.2
0.8
0.55
5.0
R
(V = 40 V)
R
Forward Voltage
V
F
V
(I = 0.1 mA)
0.21
0.27
0.34
0.46
0.54
0.24
0.30
0.365
0.50
0.60
F
(I = 1.0 mA)
F
(I = 10 mA)
F
(I = 100 mA)
F
(I = 200 mA)
F
Total Capacitance
7.0
pF
CT
(V = 1.0 V, f = 1 MHz)
R
1000
1.0E−02
1.0E−03
150°C
125°C
100
10
1
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
85°C
125°C
75°C
150°C
85°C
25°C
0.1
−40°C
0.01
1.0E−09
1.0E−10
25°C
−40°C
0.3
0.001
0
0.1
0.2
0.4
0.5
0.6
0
5
10
15
20
25
30
35
40
45
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 1. Forward Voltage
Figure 2. Leakage Current
14
12
10
8
T = 25°C
A
6
4
2
0
0
5
10
15
20
25
30
35
40
45
V , REVERSE VOLTAGE (V)
R
Figure 3. Total Capacitance
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2
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
X2DFNW2 1.0x0.6, 0.65P
CASE 711BG
ISSUE C
SCALE 8:1
DATE 13 SEP 2019
GENERIC
MARKING DIAGRAM*
XXM
XX = Specific Device Code
M
= Date Code
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON15241G
X2DFNW2 1.0X0.6, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
X2DFN2 1.0x0.6, 0.65P
CASE 714AB
ISSUE B
DATE 21 NOV 2017
SCALE 8:1
NOTES:
0.10
C
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
A B
E
D
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
PIN 1
INDICATOR
MILLIMETERS
DIM MIN
NOM MAX
A
A1
b
D
E
e
L
0.34
−−−
0.45
0.95
0.55
0.37
0.03
0.50
1.00
0.60
0.65 BSC
0.25
0.40
0.05
0.55
1.05
0.65
0.05
C
TOP VIEW
NOTE 3
A
0.10
0.10
C
0.20
0.30
C
GENERIC
MARKING DIAGRAM*
A1
SEATING
PLANE
C
SIDE VIEW
XX M
e
b
XX = Specific Device Code
e/2
M
0.05
C A B
M
= Date Code
1
RECOMMENDED
2X
L
0.05
SOLDER FOOTPRINT*
M
C A B
1.20
2X
BOTTOM VIEW
2X
0.47
0.60
PIN 1
DIMENSIONS: MILLIMETERS
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON98172F
X2DFN2 1.0X0.6, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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