NSR02L40MX2WT5G [ONSEMI]
Schottky Diode, 40V, 200mA;
| 型号： | NSR02L40MX2WT5G |
| 厂家： | 
ONSEMI |
| 描述： | Schottky Diode, 40V, 200mA |
| 文件： | 总5页 (文件大小：205K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schottky Barrier Diode
NSR02L40MX2W
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR02L40MX2W in a X2DFNW2 (0402) miniature package enables
designers to meet the challenging task of achieving higher efficiency
and meeting reduced space requirements.
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40 V SCHOTTKY
BARRIER DIODE
Features
• Low Forward Voltage Drop
• Low Reverse Current
• Very High Switching Speed
• Small Body Outline Dimensions:
0.039″ x 0.024″ (1.00 mm x 0.60 mm)
• Low Body Height: 0.016″ (0.40 mm)
• Wettable Flank Package for optimal Automated Optical Inspection
(AOI)
1
CATHODE
2
ANODE
MARKING
DIAGRAM
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
X2DFNW2
CASE 711BG
XXM
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
XX = Specific Device Code
= Date Code
M
Typical Applications
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
ORDERING INFORMATION
†
Device
Package
Shipping
NSR02L40MX2WT5G
X2DFNW2 8000 / Tape
(Pb−Free) & Reel
MAXIMUM RATINGS
Rating
Symbol Value
Unit
V
NSVR02L40MX2WT5G X2DFNW2 8000 / Tape
(Pb−Free) & Reel
Reverse Voltage
V
40
200
2.0
R
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Forward Current (DC)
I
F
mA
A
Non−Repetitive Peak Forward Surge Current
I
FSM
ESD Rating: Human Body Model
Machine Model
ESD
Class 1C
Class A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
January, 2021 − Rev. 0
NSR02L40MX2W/D
NSR02L40MX2W
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
R
400
300
°C/W
mW
q
JA
Total Power Dissipation @ T = 25°C
P
D
A
Thermal Resistance
Junction−to−Ambient (Note 2)
R
225
425
°C/W
mW
q
JA
Total Power Dissipation @ T = 25°C
P
D
A
Junction and Storage Temperature Range
T , T
−55 to +150
°C
J
stg
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 100 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
I
R
mA
(V = 25 V)
0.03
0.04
0.1
0.5
R
(V = 40 V)
R
Forward Voltage
V
F
V
(I = 1 mA)
0.32
0.43
0.62
0.38
0.50
0.80
1.20
F
(I = 10 mA)
F
(I = 40 mA)
F
(I = 100 mA)
F
Total Capacitance
pF
ns
CT
(V = 1.0 V, f = 1 MHz)
2.0
1.5
5.0
4.0
R
Reverse Recovery Time
t
RR
(I = I = 10 mA, I = 1.0 mA)
F
R
R
DC Current
Source
−
+
t
r
t
p
0.1 mF
0 V
10%
I
F
90%
750 mH
0.1 mF
V
R
Pulse Generator
Output
50 W Output
Pulse
Generator
I
F
DUT
Adjust for I
RM
t
rr
R = 50 W
L
i
= 1 mA
R(REC)
I
RM
Current
Transformer
Output Pulse
= 10 mA; measured
RM
(I = I
F
at i
= 1 mA)
R(REC)
50 W Input
Oscilloscope
1. DC Current Source is adjusted for a Forward Current (I ) of 10 mA.
F
2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current I
of 10 mA.
RM
3. Pulse Generator transition time << t .
rr
4. IR(REC) is measured at 1 mA. Typically 0.1 X I
or 0.25 X I
.
RM
RM
5. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
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2
NSR02L40MX2W
TYPICAL CHARACTERISTICS
100
10
1000
T = 150°C
A
100
125°C
10
85°C
150°C
1
1ꢀ25°C
85°C
1.0
0.1
0.1
25°C
25°C
-ꢀ55°C
0.01
-ꢀ40°C
0.3
0.001
0
0.1
0.2
0.4
0.5
0.6
0.7
0.8
0
5
10
15
V , REVERSE VOLTAGE (VOLTS)
20
25
R
V , FORWARD VOLTAGE (VOLTS)
F
Figure 2. Typical Forward Voltage
Figure 3. Reverse Current versus Reverse
Voltage
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
5.0
10
15
20
25
30
35
40
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Typical Capacitance
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
X2DFNW2 1.0x0.6, 0.65P
CASE 711BG
ISSUE C
SCALE 8:1
DATE 13 SEP 2019
GENERIC
MARKING DIAGRAM*
XXM
XX = Specific Device Code
M
= Date Code
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON15241G
X2DFNW2 1.0X0.6, 0.65P
PAGE 1 OF 1
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