NSR05T404MX2T5G [ONSEMI]

肖特基势垒二极管,500 mA,40 V;
NSR05T404MX2T5G
型号: NSR05T404MX2T5G
厂家: ONSEMI    ONSEMI
描述:

肖特基势垒二极管,500 mA,40 V

二极管
文件: 总6页 (文件大小:178K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Schottky Barrier Diodes,  
500 mA, 40 V  
NSR05T404MX2  
These Schottky barrier diodes are optimized for low forward  
voltage drop and low leakage current that offers the most optimal  
power dissipation in applications. They are housed in spacing saving  
micropackaging ideal for space constraint applications.  
www.onsemi.com  
Features  
MARKING  
DIAGRAM  
Low Forward Voltage Drop 560 mV (Typ.) @ I = 500 mA  
F
Low Reverse Current 3.0 mA (Typ.) @ V = 40 V  
R
500 mA of Continuous Forward Current  
High Switching Speed  
X2DFN2  
CASE 714AB  
Y M  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Y
= Specific Device Code  
Compliant  
M
= Date Code  
Typical Applications  
LCD and Keypad Backlighting  
Camera Photo Flash  
1
CATHODE  
2
ANODE  
Buck and Boost dcdc Converters  
Reverse Voltage and Current Protection  
Clamping & Protection  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MAXIMUM RATINGS  
NSR05T404MX2T5G X2DFN2  
2 mm Pitch  
8000/Tape &  
Reel  
Rating  
Symbol  
Value  
40  
Unit  
V
(PbFree)  
Reverse Voltage  
V
R
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Forward Current (DC)  
I
500  
2.5  
mA  
A
F
Forward Surge Current  
(60 Hz @ 1 cycle)  
I
FSM  
Repetitive Peak Forward Current  
I
0.6  
A
FRM  
(Pulse Wave = 1 sec, Duty Cycle = 66%)  
ESD Rating: Human Body Model  
Charged Device Model  
ESD  
> 8  
> 1  
kV  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
September, 2020 Rev. 0  
NSR05T404MX/D  
NSR05T404MX2  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Thermal Resistance  
JunctiontoAmbient (Note 1)  
R
310  
480  
°C/W  
mW  
q
JA  
Total Power Dissipation @ T = 25°C  
P
D
A
Thermal Resistance  
JunctiontoAmbient (Note 2)  
R
150  
1000  
°C/W  
mW  
q
JA  
Total Power Dissipation @ T = 25°C  
P
D
A
Junction and Storage Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.  
2. Mounted onto a 4 in square FR4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.  
1000  
D = 0.5  
100  
10  
0.2  
0.1  
0.05  
0.02  
0.01  
1
SINGLE PULSE  
0.1  
0.000001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1.0  
10  
100  
1000  
PULSE TIME (sec)  
Figure 1. Thermal Response (Note 1)  
1000  
100  
10  
D = 0.5  
0.2  
0.1  
0.05  
0.02  
1
0.01  
SINGLE PULSE  
0.000001 0.00001  
0.1  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
PULSE TIME (sec)  
Figure 2. Thermal Response (Note 2)  
www.onsemi.com  
2
 
NSR05T404MX2  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Reverse Leakage  
I
R
mA  
(V = 10 V)  
0.2  
3.0  
3.1  
85  
R
(V = 40 V)  
R
Forward Voltage  
V
F
mV  
(I = 10 mA)  
370  
450  
490  
560  
400  
480  
530  
630  
F
(I = 100 mA)  
F
(I = 200 mA)  
F
(I = 500 mA)  
F
Total Capacitance  
C
50  
pF  
ns  
T
(V = 1.0 V, f = 1.0 MHz)  
R
Reverse Recovery Time  
t
rr  
13  
(I = I = 10 mA, I = 1.0 mA, Figure 3)  
F
R
R(REC)  
Peak Forward Recovery Voltage  
(I = 100 mA, t = 20 ns, Figure 4)  
V
FRM  
600  
mV  
F
r
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
820 W  
I
F
+10 V  
t
r
t
p
t
2.0 k  
0.1 mF  
I
F
t
t
100 mH  
rr  
10%  
90%  
0.1 mF  
D.U.T.  
i
= 1.0 mA  
R(REC)  
50 W OUTPUT  
PULSE  
50 W INPUT  
SAMPLING  
I
R
V
R
OUTPUT PULSE  
(I = I = 10 mA; MEASURED  
GENERATOR  
OSCILLOSCOPE  
INPUT SIGNAL  
F
R
at i  
= 1.0 mA)  
R(REC)  
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.  
F
Notes: 2. Input pulse is adjusted so I  
is equal to 10 mA.  
R(peak)  
Notes: 3. t » t  
p
rr  
Figure 3. Recovery Time Equivalent Test Circuit  
I
F
V
F
t
r
V
FRM  
V
F
Time  
Time  
Figure 4. Peak Forward Recovery Voltage Definition  
www.onsemi.com  
3
 
NSR05T404MX2  
TYPICAL CHARACTERISTICS  
1000  
100  
10  
1000  
150°C  
100  
125°C  
10  
150°C  
85°C  
1
0.1  
125°C  
85°C  
25°C  
0.01  
0.001  
1
25°C  
25°C  
0.0001  
25°C  
55°C  
5
55°C  
0.4  
0.1  
0.00001  
0
0.1  
0.2  
0.3  
0.5  
0.6  
0.7  
0
10  
15  
20  
25  
30  
35  
40  
V , FORWARD VOLTAGE (V)  
F
V , REVERSE VOLTAGE (V)  
R
Figure 5. Forward Voltage  
Figure 6. Reverse Voltage  
1000  
1000  
1.0  
100  
10  
1
100  
10  
1
1.0  
0.1  
0.2 0.5  
0.8  
0.1  
0.2 0.5  
0.8  
0.1  
0.1  
0.01  
0.01  
0.001  
0.001  
0
50 100 150 200 250 300 350 400 450 500  
0
5
10  
15  
20  
25  
30  
35  
40  
I , FORWARD CURRENT (mA)  
F
V , REVERSE VOLTAGE (V)  
R
Figure 7. Average Forward Power Dissipation  
Figure 8. Average Reverse Power Dissipation  
80  
70  
16  
14  
12  
10  
8
Based on square wave currents  
T = 25°C prior to surge  
J
f = 1.0 MHz  
60  
50  
40  
30  
20  
6
4
10  
0
2
0
0
5
10  
15  
20  
25  
30  
35  
40  
0.001 0.01  
0.1  
1
10  
100 1000  
V , REVERSE VOLTAGE (V)  
R
t , PULSE ON TIME (ms)  
P
Figure 10. Forward Surge Current  
Figure 9. Total Capacitance  
www.onsemi.com  
4
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
X2DFN2 1.0x0.6, 0.65P  
CASE 714AB  
ISSUE B  
DATE 21 NOV 2017  
SCALE 8:1  
NOTES:  
0.10  
C
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
A B  
E
D
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. EXPOSED COPPER ALLOWED AS SHOWN.  
PIN 1  
INDICATOR  
MILLIMETERS  
DIM MIN  
NOM MAX  
A
A1  
b
D
E
e
L
0.34  
−−−  
0.45  
0.95  
0.55  
0.37  
0.03  
0.50  
1.00  
0.60  
0.65 BSC  
0.25  
0.40  
0.05  
0.55  
1.05  
0.65  
0.05  
C
TOP VIEW  
NOTE 3  
A
0.10  
0.10  
C
0.20  
0.30  
C
GENERIC  
MARKING DIAGRAM*  
A1  
SEATING  
PLANE  
C
SIDE VIEW  
XX M  
e
b
XX = Specific Device Code  
e/2  
M
0.05  
C A B  
M
= Date Code  
1
RECOMMENDED  
2X  
L
0.05  
SOLDER FOOTPRINT*  
M
C A B  
1.20  
2X  
BOTTOM VIEW  
2X  
0.47  
0.60  
PIN 1  
DIMENSIONS: MILLIMETERS  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “ G”,  
may or may not be present. Some products  
may not follow the Generic Marking.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON98172F  
X2DFN2 1.0X0.6, 0.65P  
PAGE 1 OF 1  
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