NSR10T406MX2WT5G [ONSEMI]
1.0 A, 40 V, Schottky Barrier Diode;
| 型号： | NSR10T406MX2WT5G |
| 厂家： | 
ONSEMI |
| 描述： | 1.0 A, 40 V, Schottky Barrier Diode 测试 二极管 |
| 文件： | 总6页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schottky Barrier Diode,
1 A, 40 V
NSR10T406MX2
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current that offers the most optimal
power dissipation in applications. They are housed in spacing saving
micro−packaging ideal for space constraint applications.
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Features
MARKING
DIAGRAM
• Low Forward Voltage Drop − 470 mV (Typ.) @ I = 1 A
F
• Low Reverse Current − 5 mA (Typ.) @ V = 40 V
1
2
R
• 1 A of Continuous Forward Current
1
2
X2DFNW2
CASE 717AB
Q3M
• High Switching Speed
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Q3
M
= Specific Device Code
= Date Code
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
1
CATHODE
2
ANODE
ORDERING INFORMATION
MAXIMUM RATINGS
Device
Package
Shipping†
Rating
Symbol
Value
40
Unit
V
NSR10T406MX2WT5G X2DFNW2 8000 / Tape &
Reverse Voltage
V
R
(Pb−Free) Reel
Forward Current (DC)
I
1.0
A
F
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Forward Surge Current
(60 Hz @ 1 cycle)
I
9.5
A
FSM
Repetitive Peak Forward Current
I
3.98
A
FRM
(Pulse Wave = 1 sec, Duty Cycle = 66%)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
December, 2019 − Rev. 0
NSR10T406MX2/D
NSR10T406MX2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
R
150
800
°C/W
mW
q
JA
Total Power Dissipation @ T = 25°C
P
D
A
Thermal Resistance
Junction−to−Ambient (Note 2)
R
72.7
1500
°C/W
mW
q
JA
Total Power Dissipation @ T = 25°C
P
D
A
Junction and Storage Temperature Range
T , T
−55 to +150
°C
J
stg
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
1000
100
D = 0.5
0.2
0.1
10
0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 1. Thermal Response (Note 1)
100
D = 0.5
0.2
0.1
10
1
0.05
0.02
0.01
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 2. Thermal Response (Note 2)
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2
NSR10T406MX2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
I
R
mA
(V = 10 V)
0.5
2.1
1.5
10
R
(V = 40 V)
R
Forward Voltage
V
F
mV
(I = 10 mA)
310
375
400
435
475
380
440
470
500
530
F
(I = 100 mA)
F
(I = 200 mA)
F
(I = 500 mA)
F
(I = 1.0 A)
F
Total Capacitance
C
255
295
pF
ns
V
T
(V = 1.0 V, f = 1.0 MHz)
R
Reverse Recovery Time
t
rr
65
74
(I = I = 10 mA, I = 1.0 mA, Figure 3)
F
R
R(REC)
Peak Forward Recovery Voltage
(I = 100 mA, t = 20 ns, Figure 4)
V
FRM
0.54
0.59
F
r
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
I
F
+10 V
t
r
t
p
t
2.0 k
0.1 mF
I
F
t
t
100 mH
rr
10%
90%
0.1 mF
D.U.T.
i
= 1.0 mA
R(REC)
50 W OUTPUT
PULSE
50 W INPUT
SAMPLING
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; MEASURED
GENERATOR
OSCILLOSCOPE
INPUT SIGNAL
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 3. Recovery Time Equivalent Test Circuit
I
F
V
F
t
r
V
FRM
V
F
Time
Time
Figure 4. Peak Forward Recovery Voltage Definition
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3
NSR10T406MX2
TYPICAL CHARACTERISTICS
0.01
1000
150°C
125°C
100°C
0.001
150°C
125°C
0.0001
85°C
0.00001
100
50°C
25°C
100°C
0.000001
0.0000001
−25°C
85°C
−25°C
−55°C
0.5
1E−08
1E−09
−55°C
50°C
0.3
25°C
10
0
0.1
0.2
0.4
0.6
10
15
20
25
30
35
40
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 5. Forward Voltage
Figure 6. Leakage Current
400
350
300
250
f = 1.0 MHz
T = 25°C
A
200
150
100
50
0
0
5
10
15
20
25
30
35
40
45
V , REVERSE VOLTAGE (V)
R
Figure 7. Total Capacitance
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
X2DFNW2 1.60x0.80
CASE 717AB
ISSUE B
DATE 30 OCT 2019
GENERIC
MARKING DIAGRAM*
XXM
XX
M
= Specific Device Code
= Date Code
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84164G
X2DFNW2 1.60x0.80
PAGE 1 OF 1
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