NSR2030QMUTWG [ONSEMI]
肖特基二极管，全桥，30 V，2 A;
| 型号： | NSR2030QMUTWG |
| 厂家： | 
ONSEMI |
| 描述： | 肖特基二极管，全桥，30 V，2 A 肖特基二极管 |
| 文件： | 总6页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSR2030QMUTWG
2A, 30V Schottky Full Bridge
These full bridge Schottky barrier diodes are designed for the
rectification of the high speed signal of wireless charging. The
NSR2030QMUTWG has a very low forward voltage that will reduce
conduction loss. It is housed in a UDFN 3.5 x 3.5 x 0.5 mm package
that is ideal for space constrained wireless applications.
www.onsemi.com
Features
• Extremely Fast Switching Speed
MARKING
DIAGRAM
• Low Forward Voltage − 0.54 V (Typ) @ I = 2 A
F
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
1
2030
AYWWG
G
UDFN4 3.5x3.5
CASE 517DA
Typical Applications
• Low Voltage Full Bridge Rectification & Wireless Charging
MAXIMUM RATINGS (T = 125°C unless otherwise noted) (Note 1)
J
2030
= Specific Device Code
A
Y
= Assembly Location
= Year
= Work Week
Rating
Symbol
Value
30
Unit
V
Reverse Voltage
V
R
WW
G
= Pb−Free Package
Forward Current (DC)
I
F
2.0
A
(Note: Microdot may be in either location)
Forward Current Surge Peak
(60 Hz, 1 cycle)
I
I
12.5
A
FSM
Non−Repetitive Peak Forward Current
A
FSM
PIN CONNECTIONS
(Square Wave, T = 25°C prior to surge)
J
t = 1 ms
t = 1 ms
t = 1 s
40
10
3.0
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. All specifications pertain to a single diode.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board
T = 25°C
A
P
2.08
W
D
DEVICE SCHEMATIC
(Note 2)
Derate above 25°C
20.8
48
mW/°C
°C/W
Thermal Resistance Junction to Ambient
R
q
JA
(Note 2)
Total Device Dissipation FR-5 Board
P
D
0.75
W
T = 25°C
Derate above 25°C
(Note 3)
A
7.6
mW/°C
°C/W
Thermal Resistance Junction to Ambient
R
132
q
JA
(Note 3)
Total Device Dissipation FR-5 Board
P
0.87
W
D
ORDERING INFORMATION
T = 25°C
(Note 4)
A
Derate above 25°C
8.8
mW/°C
°C/W
Device
Package
Shipping†
Thermal Resistance Junction to Ambient
R
114
q
JA
NSR2030QMUTWG UDFN4
(Pb−Free)
3000 / Tape &
Reel
(Note 4)
Junction Temperature
T
+125
°C
°C
J
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Storage Temperature Range
T
stg
−55 to
+150
2
2. 4 Layer JEDEC JESD51.7 FR−4 @ 10 mm , 1 oz. copper trace, still air.
3. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm , 1 oz. copper trace, still air.
4. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm , 2 oz. copper trace, still air.
2
2
© Semiconductor Components Industries, LLC, 2015
Publication Order Number:
May, 2017 − Rev. 1
NSR2030QMU/D
NSR2030QMUTWG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 5)
A
Characteristic
Reverse Breakdown Voltage (I = 1.0 mA)
Symbol
Min
30
−
Typ
−
Max
−
Unit
V
V
(BR)
R
Reverse Leakage (V = 30 V)
I
R
5.0
20
mA
V
R
Forward Voltage (I = 0.5 A)
V
F
V
F
V
F
−
0.41
0.46
0.54
34
0.455
0.55
0.65
−
F
Forward Voltage (I = 1.0 A)
−
V
F
Forward Voltage (I = 2.0 A)
−
V
F
Reverse Recovery Time
t
rr
−
ns
(I = I = 10 mA, I = 1.0 mA)
F
R
R(REC)
Input Capacitance (pins 1 to 3) (V = 1.0 V, f = 1.0 MHz)
C
−
102
−
pF
R
T
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. All specifications pertain to a single diode.
820 W
I
F
+10 V
t
r
t
p
t
2.0 k
0.1 mF
I
F
t
t
100 mH
rr
10%
90%
0.1 mF
D.U.T.
i
= 1.0 mA
R(REC)
50 W OUTPUT
PULSE
50 W INPUT
SAMPLING
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; MEASURED
GENERATOR
OSCILLOSCOPE
INPUT SIGNAL
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
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2
NSR2030QMUTWG
TYPICAL CHARACTERISTICS
10
1
1.0E−01
1.0E−02
150°C
125°C
85°C
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
1.0E−09
0.1
25°C
150°C
−55°C
0.01
−55°C
0.4
125°C 85°C
0.1
25°C
0.3
0.001
1.0E−10
0.0
0.2
0.5
0.6
5
10
15
20
25
30
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 1. Forward Voltage
Figure 2. Reverse Leakage
110
100
90
45
40
T = 25°C
A
Based on square wave currents
T = 25°C prior to surge
J
35
30
25
20
15
10
5
80
70
60
50
40
0
30
0.001
0.01
0.1
1
10
100
1000
0
5
10
15
20
25
30
T , PULSE ON TIME (ms)
p
V , REVERSE VOLTAGE (V)
R
Figure 3. Input Capacitance
Figure 4. Forward Surge Current
100
10
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.00001
0.1
0.000001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (s)
Figure 5. Thermal Response
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN4 3.5x3.5, 1.55P
CASE 517DA
ISSUE A
DATE 25 SEP 2014
SCALE 2:1
NOTES:
D
A B
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.05 AND 0.15 MM FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PADS AS WELL AS THE TERMINALS.
5. POSITIONAL TOLERANCE APPLIES TO ALL
OF THE EXPOSED PADS.
PIN ONE
INDICATOR
E
2X
0.10
0.10
C
C
2X
MILLIMETERS
TOP VIEW
SIDE VIEW
DIM MIN
0.45
A1 0.00
MAX
0.55
0.05
A
A
A3
A1
0.05
0.05
C
C
A3
b
0.13 REF
0.35
0.45
D
3.50 BSC
D2 1.15
D3 1.35
1.25
1.45
SEATING
PLANE
NOTE 4
C
E
3.50 BSC
E2 2.25
E3 0.95
2.35
1.05
M
0.10
D2
C A B
e
F
G
L
1.55 BSC
0.925 BSC
0.58 BSC
F
NOTE 5
2X
D3
F
1
2
0.35
0.55
1
4
2
GENERIC
MARKING DIAGRAM*
E2
2X
E3
M
0.10
C A B
G
1
4
3
3
XXXX
NOTE 5
4X
L
4X b
e/2
AYWWG
M
0.10
C A B
e
G
M
SUPPLEMENTAL
BOTTOM VIEW
0.05
C
NOTE 3
BOTTOM VIEW
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
= Work Week
RECOMMENDED
SOLDERING FOOTPRINT*
WW
G
1.55
= Pb−Free Package
PITCH
(Note: Microdot may be in either location)
1.60
1.40
2X
0.63
4X
0.56
*This information is generic. Please refer
to device data sheet for actual part mark-
ing.
Pb−Free indicator, “G” or microdot “ G”,
0.75
1.17
may or may not be present.
2.52 3.80
1.20
0.925
0.925
1
2X
0.50
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
98AON91404F
DOCUMENT NUMBER:
STATUS:
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
ON SEMICONDUCTOR STANDARD
NEW STANDARD:
DESCRIPTION: UDFN4 3.5X3.5, 1.55P
PAGE 1 OF2
DOCUMENT NUMBER:
98AON91404F
PAGE 2 OF 2
ISSUE
REVISION
DATE
O
A
RELEASED FOR PRODUCTION. REQ. BY D. TRUHITTE.
24 SEP 2014
25 SEP 2014
CORRECTED GENERIC MARKING DIAGRAM INFORMATION. REQ. BY D.
TRUHITTE.
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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© Semiconductor Components Industries, LLC, 2014
Case Outline Number:
September, 2014 − Rev. A
517DA
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
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