NSS12601CF8T1G [ONSEMI]
12 V, 8.0 A, Low VCE(sat) NPN Transistor; 12 V ， 8.0 A ，低VCE （ sat）的NPN晶体管
| 型号： | NSS12601CF8T1G |
| 厂家： | 
ONSEMI |
| 描述： | 12 V, 8.0 A, Low VCE(sat) NPN Transistor |
| 文件： | 总6页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSS12601CF8T1G
12 V, 8.0 A, Low VCE(sat)
NPN Transistor
2
ON Semiconductor's e PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V ) and high current gain capability. These
CE(sat)
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
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Typical applications are DC-DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
12 VOLTS, 8.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 30 mW
COLLECTOR
1, 2, 3, 6, 7, 8
2
4
BASE
•ꢀThis is a Pb-Free Device
MAXIMUM RATINGS (T = 25°C)
A
5
EMITTER
Rating
Symbol
Max
12
Unit
Vdc
Vdc
Vdc
Adc
A
Collector‐Emitter Voltage
Collector‐Base Voltage
Emitter‐Base Voltage
V
CEO
V
CBO
V
EBO
12
ChipFET]
8
CASE 1206A
STYLE 4
6.0
6.0
8.0
Collector Current - Continuous
Collector Current - Peak
Electrostatic Discharge
I
C
1
I
CM
MARKING DIAGRAM
ESD
HBM Class 3B
MM Class C
VF Mꢀ
THERMAL CHARACTERISTICS
Characteristic
G
Symbol
Max
Unit
Total Device Dissipation, T = 25°C
P
D
(Note 1)
830
6.7
mW
mW/°C
A
VF = Specific Device Code
M = Month Code
Derate above 25°C
G
= Pb-Free Package
Thermal Resistance,
Junction-to-Ambient
R
(Note 1)
150
°C/W
q
JA
Total Device Dissipation, T = 25°C
P
D
(Note 2)
1.4
11.1
W
mW/°C
A
PIN CONNECTIONS
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
R
R
(Note 2)
(Note 2)
90
°C/W
°C/W
°C
q
JA
8
7
6
5
1
2
3
4
C
C
C
E
C
C
C
B
Thermal Resistance,
Junction-to-Lead #1
15
q
JL
Junction and Storage
Temperature Range
T , T
J
-55 to
+150
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
2
1. FR-ā4 @ 100 mm , 1 oz copper traces.
2
†
Device
NSS12601CF8T1G
Package
Shipping
2. FR-ā4 @ 500 mm , 1 oz copper traces.
ChipFET
(Pb-Free)
3000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©ꢀ Semiconductor Components Industries, LLC, 2007
May, 2007 - Rev. 1
1
Publication Order Number:
NSS12601CF8/D
NSS12601CF8T1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collectorā-āEmitter Breakdown Voltage
(I = 10 mAdc, I = 0)
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
12
12
6.0
-
-
-
-
-
-
-
C
B
Collectorā-āBase Breakdown Voltage
(I = 0.1 mAdc, I = 0)
V
V
-
C
E
Emitterā-āBase Breakdown Voltage
(I = 0.1 mAdc, I = 0)
Vdc
-
E
C
Collector Cutoff Current
(V = 12 Vdc, I = 0)
I
mAdc
mAdc
CBO
0.1
0.1
CB
E
Emitter Cutoff Current
(V = 6.0 Vdc)
I
EBO
-
EB
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I = 10 mA, V = 2.0 V)
h
FE
200
200
200
200
200
-
-
-
-
-
-
C
CE
(I = 500 mA, V = 2.0 V)
-
395
-
-
C
CE
(I = 1.0 A, V = 2.0 V)
C
CE
(I = 2.0 A, V = 2.0 V)
C
CE
(I = 3.0 A, V = 2.0 V)
C
CE
Collectorā-āEmitter Saturation Voltage (Note 3)
(I = 0.1 A, I = 0.010 A)
(I = 1.0 A, I = 0.100 A)
V
V
CE(sat)
-
-
-
-
-
-
0.007
0.030
0.045
0.055
0.080
0.090
0.010
0.050
0.060
0.070
0.110
0.120
C
B
C
B
(I = 1.0 A, I = 0.010 A)
C
B
(I = 2.0 A, I = 0.020 A)
C
B
(I = 3.0 A, I = 0.030 A)
C
B
(I = 4.0 A, I = 0.400 A)
C
B
Baseā-āEmitter Saturation Voltage (Note 3)
(I = 1.0 A, I = 0.01 A)
V
V
V
BE(sat)
-
-
0.760
0.720
0.900
0.900
C
B
Baseā-āEmitter Turn-on Voltage (Note 3)
(I = 1.0 A, V = 2.0 V)
V
BE(on)
C
CE
Cutoff Frequency
(I = 100 mA, V = 5.0 V, f = 100 MHz)
f
MHz
T
140
-
-
-
-
C
CE
Input Capacitance (V = 0.5 V, f = 1.0 MHz)
EB
Cibo
-
-
1000
200
pF
pF
Output Capacitance (V = 3.0 V, f = 1.0 MHz)
CB
Cobo
SWITCHING CHARACTERISTICS
Delay (V = 10 V, I = 750 mA, I = 15 mA)
B1
t
t
-
-
-
-
-
-
-
-
110
140
550
140
ns
ns
ns
ns
CC
C
d
Rise (V = 10 V, I = 750 mA, I = 15 mA)
B1
t
r
CC
C
Storage (V = 10 V, I = 750 mA, I = 15 mA)
B1
CC
C
s
Fall (V = 10 V, I = 750 mA, I = 15 mA)
B1
t
f
CC
C
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
TYPICAL CHARACTERISTICS
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2
NSS12601CF8T1G
0.30
0.25
0.20
0.15
0.10
I /I = 10
C B
I /I = 100
C B
0.25
0.20
0.15
0.10
150°C
150°C
25°C
25°C
-55 °C
0.05
0
-55 °C
0.05
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
650
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
150°C (5.0 V)
150°C (2.0 V)
600
550
500
450
400
350
300
250
I /I = 10
C B
25°C (5.0 V)
25°C (2.0 V)
-55 °C
25°C
-55 °C (5.0 V)
-55 °C (2.0 V)
150°C
200
150
0.4
0.3
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.1
1.0
0.8
0.6
0.4
I
C
= 500 mA
300 mA
10 mA
V
CE
= 2.0 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
-55 °C
100 mA
25°C
150°C
0.2
0
0.2
0.1
0.001
0.01
0.1
1
10
0.01
0.1
1
10
100
I , COLLECTOR CURRENT (A)
C
I , BASE CURRENT (mA)
B
Figure 5. Base Emitter Turn-On Voltage vs.
Collector Current
Figure 6. Saturation Region
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3
NSS12601CF8T1G
TYPICAL CHARACTERISTICS
1000
950
210
200
190
180
170
160
150
140
130
120
C
(pF)
C
(pF)
obo
ibo
900
850
800
750
700
650
600
550
110
100
500
450
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
9
10
V
EB
, EMITTER BASE VOLTAGE (V)
V
CB
, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
10
1.0 S
1.0 mS
10 mS
100 mS
1
Thermal Limit
0.1
Single Pulse Test
= 25°C
at T
amb
0.01
0.01
0.1
1
(Vdc)
10
100
V
CE
Figure 9. Safe Operating Area
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4
NSS12601CF8T1G
PACKAGE DIMENSIONS
ChipFETt
CASE 1206A-03
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
D
q
L
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
8
1
7
2
6
3
5
4
5
4
6
3
7
2
8
1
H
E
E
MILLIMETERS
INCHES
NOM
0.041
0.012
0.006
DIM
A
b
c
D
MIN
1.00
0.25
0.10
2.95
1.55
NOM
1.05
0.30
MAX
MIN
MAX
0.043
0.014
0.008
0.122
0.067
e1
b
1.10
0.35
0.20
3.10
1.70
0.039
0.010
0.004
0.116
0.061
c
e
0.15
3.05
0.120
0.065
E
1.65
e
e1
L
H
E
q
0.65 BSC
0.55 BSC
0.35
0.025 BSC
0.022 BSC
0.014
A
0.28
1.80
0.42
2.00
0.011
0.071
0.017
0.079
1.90
5° NOM
0.075
5° NOM
0.05 (0.002)
STYLE 4:
PIN 1. COLLECTOR
2. COLLECTOR
3. COLLECTOR
4. BASE
5. EMITTER
6. COLLECTOR
7. COLLECTOR
8. COLLECTOR
SOLDERING FOOTPRINT*
2.032
0.08
2.032
0.08
1
1
1.727
0.068
2.362
0.093
2.362
0.093
0.635
0.025
PITCH
8X
2X
0.66
0.026
0.457
0.018
0.457
0.018
0.66
0.026
8X
2X
mm
inches
ǒ
Ǔ
mm
inches
ǒ
Ǔ
Styles 1 and 4
Basic Style
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
NSS12601CF8T1G
ChipFET is a trademark of Vishay Siliconix.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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NSS12601CF8/D
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