NSV20200DMTWTBG [ONSEMI]
Dual 20V 2A Low VCE(sat) PNP Transistors in WDFN6;
| 型号： | NSV20200DMTWTBG |
| 厂家： | 
ONSEMI |
| 描述： | Dual 20V 2A Low VCE(sat) PNP Transistors in WDFN6 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Low VCE(sat) PNP Transistors
20 V, 2 A
20 Volt, 2 Amp
PNP Low V Transistors
CE(sat)
NSS20200DMT
2
MARKING
DIAGRAM
onsemi’s e PowerEdge family of low V
transistors are
CE(sat)
1
2
3
6
5
4
miniature surface mount devices featuring ultra low saturation voltage
WDFN6
CASE 506AN
AT MG
(V ) and high current gain capability. These are designed for use
CE(sat)
G
1
in low voltage, high speed switching applications where affordable
efficient energy control is important.
AT = Specific Device Code
M
G
= Date Code
Typical applications are DC−DC converters and LED lightning,
power management…etc. In the automotive industry they can be used
in air bag deployment and in the instrument cluster. The high current
= Pb−Free Package
(Note: Microdot may be in either location)
2
gain allows e PowerEdge devices to be driven directly from PMU’s
control outputs, and the Linear Gain (Beta) makes them ideal
components in analog amplifiers.
PIN CONNECTIONS
6
5
4
1
2
3
Features
7
8
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• NSV20200DMTWTBG − Wettable Flanks Device
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
6,7
5
1
2
MAXIMUM RATINGS (T = 25°C)
A
Rating
Collector−Emitter Voltage
Symbol
Max
20
20
7
Unit
Vdc
Vdc
Vdc
A
V
CEO
V
CBO
V
EBO
Collector−Base Voltage
Emitter−Base Voltage
4
3,8
Collector Current − Continuous
Collector Current − Peak
I
C
2
I
3
A
ORDERING INFORMATION
CM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
Package
Shipping
NSS20200DMTTBG
WDFN6
(Pb−Free)
3000 / Tape &
Reel
THERMAL CHARACTERISTICS
NSV20200DMTWTBG
WDFN6
(Pb−Free)
3000 / Tape &
Reel
Characteristic
Symbol
Max
Unit
Thermal Resistance Junction−to−Ambient
R
60
°C/W
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
q
JA
(Notes 1 and 2)
Total Power Dissipation per Package @
T = 25°C (Note 2)
A
P
2.10
79
W
°C/W
W
D
Thermal Resistance Junction−to−Ambient
(Note 3)
R
q
JA
Power Dissipation per Transistor @ T = 25°C
P
1.59
A
D
(Note 3)
Junction and Storage Temperature Range
T , T
−55 to
+150
°C
J
stg
2
1. Per JESD51−7 with 100 mm pad area and 2 oz. Cu (Dual Operation).
2. P per Transistor when both are turned on is one half of Total P or 1.13 Watts.
D
D
2
3. Per JESD51−7 with 100 mm pad area and 2 oz. Cu (Single−Operation).
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
January, 2022 − Rev. 1
NSS20200DMT/D
NSS20200DMT
Table 1. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I = −10 mA, I = 0)
V
−20
−20
−7
V
V
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector−Base Breakdown Voltage (Ic = −0.1 mA, I = 0)
V
V
E
Emitter−Base Breakdown Voltage (I = −0.1 mA, I = 0)
V
E
C
Collector Cutoff Current (V = −60 V, I = 0)
I
CBO
−100
−100
nA
nA
CB
E
Emitter Cutoff Current (V = −5.0 V)
I
EBO
BE
ON CHARACTERISTICS
DC Current Gain (Note 4)
h
FE
(I = −100 mA, V = −2.0 V)
250
210
160
100
C
CE
(I = −500 mA, V = −2.0 V)
C
CE
(I = −1 A, V = −2.0 V)
C
CE
(I = −2 A, V = −2.0 V
C
CE
Collector−Emitter Saturation Voltage (Note 4)
(I = −500 mA, I = −50 mA)
V
V
CE(sat)
−0.11
−0.20
−0.22
−0.39
C
B
(I = −700 mA, I = −7 mA)
C
B
(I = −1 A, I = −50 mA)
C
B
(I = −2 A, I = −200 mA)
C
B
Base*Emitter Saturation Voltage (Note 4)
V
V
V
BE(sat)
(I = −500 mA, I = −50 mA)
−1.0
−1.1
−1.2
C
B
(I = −1 A, I = −50 mA)
C
B
(I = −1 A, I = −100 mA)
C
B
Base−Emitter Turn−on Voltage (Note 4)
(I = 500 mA, I = 50 mA)
V
−0.9
BE(on)
C
B
DYNAMIC CHARACTERISTICS
Output Capacitance
CB
C
18
pF
obo
(V = 10 V, f = 1.0 MHz)
Cutoff Frequency
f
T
155
MHz
(I = 50 mA, V = 2.0 V, f = 100 MHz)
C
CE
SWITCHING TIMES
Delay Time (V = −10 V, I = −0.5 A, I = −25 mA, I = 25 mA)
t
d
15
13
ns
ns
ns
ns
CC
C
B1
B2
Rise Time (V = −10 V, I = −0.5 A, I = −25 mA, I = 25 mA)
t
r
CC
C
B1
B2
Storage Time (V = −10 V, I = −0.5 A, I = −25 mA, I = 25 mA)
t
s
360
22
CC
C
B1
B2
Fall Time (V = −10 V, I = −0.5 A, I = −25 mA, I = 25 mA)
t
f
CC
C
B1
B2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
www.onsemi.com
2
NSS20200DMT
TYPICAL CHARACTERISTICS
700
600
500
400
300
200
100
0
800
150°C
150°C
100°C
V
CE
= 2 V
V
CE
= 5 V
700
600
500
400
300
200
100
0
100°C
25°C
25°C
−55°C
−55°C
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain
Figure 2. DC Current Gain
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
18 mA
I
= 20 mA
B
0.4
0.04
I /I = 20
C
B
16 mA
14 mA
12 mA
10 mA
150°C
100°C
8.0 mA
−55°C
6.0 mA
4.0 mA
2.0 mA
25°C
0.001
0
1
2
3
4
5
6
0.001
0.01
0.1
1
10
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
I , COLLECTOR CURRENT (A)
C
Figure 3. Collector Current as a Function of
Collector Emitter Voltage
Figure 4. Collector−Emitter Saturation Voltage
1
I /I = 100
C
B
−55°C
150°C
100°C
150°C
0.1
0.1
100°C
25°C
25°C
I /I = 50
C
B
−55°C
0.01
0.01
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 5. Collector−Emitter Saturation Voltage
Figure 6. Collector−Emitter Saturation Voltage
www.onsemi.com
3
NSS20200DMT
TYPICAL CHARACTERISTICS
1.2
1.0
1.0
−55°C
−55°C
0.8
25°C
25°C
0.6
100°C
0.5
0
100°C
0.4
150°C
150°C
I /I = 20
0.2
0
C
B
V
CE
= 2 V
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 7. Base−Emitter Saturation Voltage
Figure 8. Base−Emitter “ON” Voltage
4
3.5
3
115
105
95
I
C
= 1.0 A
T = 25°C
A
T = 25°C
A
f = 1 MHz
2.5
2
85
I
C
= 2.0 A
75
1.5
1
65
55
0.5
0
I
= 0.5 A
C
45
0.0001
0.001
0.01
0.1
1
0
1
2
3
4
5
6
7
I , BASE CURRENT (A)
B
V
EB
, BASE−EMITTER VOLTAGE (V)
Figure 9. Collector Saturation Region
Figure 10. Input Capacitance
60
50
40
30
20
10
0
1000
100
10
T = 25°C
CE
J
V
T = 25°C
A
= 2 V
f = 1 MHz
f
= 100 MHz
test
1
0
5
10
15
20
25
30
1
10
100
1000
V
CB
, COLLECTOR−BASE VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Figure 11. Output Capacitance
Figure 12. fT, Current Gain Bandwidth Product
www.onsemi.com
4
NSS20200DMT
TYPICAL CHARACTERISTICS
3
2.5
2.0
1.5
1.0
Dual Device
Single Device
0.5
0
0
25
50
75
100
125
150
175
TEMPERATURE (°C)
Figure 13. Power Derating
100
10
1
Duty Cycle = 0.5
0.20
0.10
0.05
0.02
0.01
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 14. Thermal Resistance by Transistor
100
Duty Cycle = 0.5
0.20
0.10
10
1
0.05
0.02
0.01
Single Pulse
0.1
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 15. Thermal Resistance for Both Transistors
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 506AN
ISSUE H
DATE 25 JAN 2022
GENERIC
MARKING DIAGRAM*
1
XX M
XX = Specific Device Code
M
= Date Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON20861D
WDFN6 2x2, 0.65P
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2013
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
©2020 ICPDF网 联系我们和版权申明