NSV60200SMTWTBG [ONSEMI]
Single 60V 2A Low VCE(sat) PNP Transistor in WDFN6;
| 型号： | NSV60200SMTWTBG |
| 厂家： | 
ONSEMI |
| 描述： | Single 60V 2A Low VCE(sat) PNP Transistor in WDFN6 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Low VCE(sat) PNP Transistor
60 V, 2 A
60 Volt, 2 Amp
PNP Low V Transistor
CE(sat)
MARKING
DIAGRAM
NSS60200SMT
2
onsemi’s e PowerEdge family of low V
transistors are
CE(sat)
1
2
3
6
5
4
WDFN6
CASE 506AN
miniature surface mount devices featuring ultra low saturation voltage
AR MG
G
(V ) and high current gain capability. These are designed for use
CE(sat)
1
in low voltage, high speed switching applications where affordable
efficient energy control is important.
AR = Specific Device Code
M
= Date Code
Typical applications are DC−DC converters and LED lightning,
power management…etc. In the automotive industry they can be used
in air bag deployment and in the instrument cluster. The high current
G
= Pb−Free Package
(Note: Microdot may be in either location)
2
gain allows e PowerEdge devices to be driven directly from PMU’s
control outputs, and the Linear Gain (Beta) makes them ideal
components in analog amplifiers.
PIN CONNECTIONS
6
5
4
1
2
3
Features
7
8
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• NSV60200SMTWTBG − Wettable Flanks Device
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
6,7
1
2
MAXIMUM RATINGS (T = 25°C)
A
Rating
Collector−Emitter Voltage
Symbol
Max
60
60
6
Unit
Vdc
Vdc
Vdc
A
(Pins 3,4,5,8 are not connected)
V
CEO
V
CBO
V
EBO
Collector−Base Voltage
Emitter−Base Voltage
ORDERING INFORMATION
†
Device
Package
Shipping
Collector Current − Continuous
Collector Current − Peak
I
C
2
NSS60200SMTTBG
WDFN6
(Pb−Free)
3000/Tape &
Reel
I
3
A
CM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
NSV60200SMTWTBG
WDFN6
(Pb−Free)
3000/Tape &
Reel
THERMAL CHARACTERISTICS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Characteristic
Symbol
Max
Unit
Thermal Resistance Junction−to−Ambient
(Note 1)
R
69
°C/W
q
JA
Total Power Dissipation @ T = 25°C (Note 1)
P
D
1.8
W
A
Junction and Storage Temperature Range
T , T
−55 to
+150
°C
J
stg
2
1. Per JESD51−7 with 100 mm pad area and 2 oz. Cu.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
January, 2022 − Rev. 2
NSS60200SMT/D
NSS60200SMT
Table 1. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I = −10 mA, I = 0)
V
−60
−80
−6
V
V
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector−Base Breakdown Voltage (Ic = −0.1 mA, I = 0)
V
V
E
Emitter−Base Breakdown Voltage (I = −0.1 mA, I = 0)
V
E
C
Collector Cutoff Current (V = −60 V, I = 0)
I
CBO
−100
−100
nA
nA
CB
E
Emitter Cutoff Current (V = −5.0 V)
I
EBO
BE
ON CHARACTERISTICS
DC Current Gain (Note 2)
h
FE
(I = −100 mA, V = −2.0 V)
150
120
90
230
180
140
80
C
CE
(I = −500 mA, V = −2.0 V)
C
CE
(I = −1 A, V = −2.0 V)
C
CE
(I = −2 A, V = −2.0 V
40
C
CE
Collector−Emitter Saturation Voltage (Note 2)
(I = −500 mA, I = −50 mA)
V
V
CE(sat)
−0.115
−0.295
−0.250
−0.200
−0.365
−0.160
−0.420
−0.350
−0.300
−0.450
C
B
(I = −700 mA, I = −7.0 mA)
C
B
(I = −1 A, I = −50 mA)
C
B
(I = −1 A, I = −100 mA)
C
B
(I = −2 A, I = −200 mA)
C
B
Base*Emitter Saturation Voltage (Note 2)
V
V
V
BE(sat)
(I = −500 mA, I = −50 mA)
−1.0
−1.0
−1.1
C
B
(I = −1 A, I = −50 mA)
C
B
(I = −1 A, I = −100 mA)
C
B
Base−Emitter Turn−on Voltage (Note 2)
(I = 500 mA, I = 50 mA)
V
−0.9
BE(on)
C
B
DYNAMIC CHARACTERISTICS
Output Capacitance
CB
C
18
pF
obo
(V = 10 V, f = 1.0 MHz)
Cutoff Frequency
f
T
155
MHz
(I = 50 mA, V = 2.0 V, f = 100 MHz)
C
CE
SWITCHING TIMES
Delay Time (V = −10 V, I = −0.5 A, I = −25 mA, I = 25 mA)
t
d
15
13
ns
ns
ns
ns
CC
C
B1
B2
Rise Time (V = −10 V, I = −0.5 A, I = −25 mA, I = 25 mA)
t
r
CC
C
B1
B2
Storage Time (V = −10 V, I = −0.5 A, I = −25 mA, I = 25 mA)
t
s
360
22
CC
C
B1
B2
Fall Time (V = −10 V, I = −0.5 A, I = −25 mA, I = 25 mA)
t
f
CC
C
B1
B2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
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2
NSS60200SMT
TYPICAL CHARACTERISTICS
400
350
300
250
200
150
100
400
150°C
100°C
V
CE
= 2 V
V
CE
= 5 V
150°C
100°C
350
300
250
200
150
100
25°C
25°C
−55°C
−55°C
50
0
50
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain
Figure 2. DC Current Gain
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1
I
= 20 mA
B
18 mA
16 mA
14 mA
12 mA
10 mA
0.1
0.01
1
8.0 mA
6.0 mA
150°C
100°C
25°C
4.0 mA
2.0 mA
0.4
I /I = 20
C
B
0.2
0
−55°C
0.001
0
1
2
3
4
5
6
0.01
0.1
1
10
V
, COLLECTOR EMITTER VOLTAGE (V)
I , COLLECTOR CURRENT (A)
C
CE
Figure 3. Collector Current as a Function of
Collector Emitter Voltage
Figure 4. Collector−Emitter Saturation Voltage
1
−55°C
150°C
150°C
100°C
25°C
0.1
0.1
25°C
100°C
−55°C
I /I = 50
I /I = 100
C
B
C
B
0.01
0.01
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 5. Collector−Emitter Saturation Voltage
Figure 6. Collector−Emitter Saturation Voltage
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3
NSS60200SMT
TYPICAL CHARACTERISTICS
1.2
1.0
1.0
−55°C
−55°C
0.8
25°C
0.6
25°C
100°C
100°C
0.5
0
0.4
150°C
150°C
I /I = 20
0.2
0
C
B
V
CE
= 2 V
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 7. Base−Emitter Saturation Voltage
Figure 8. Base−Emitter “ON” Voltage
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
240
200
160
120
T = 25°C
A
T = 25°C
A
f = 1 MHz
I
= 2.0 A
C
I
= 1.0 A
= 0.5 A
C
80
40
I
C
0.1
0
I
C
= 0.1 A
0.0001
0.001
0.01
0.1
1
0
1
2
3
4
5
6
7
I , BASE CURRENT (A)
B
V
EB
, BASE−EMITTER VOLTAGE (V)
Figure 9. Collector Saturation Region
Figure 10. Input Capacitance
1000
100
10
50
45
40
T = 25°C
CE
J
V
T = 25°C
A
= 2 V
f = 1 MHz
f
= 100 MHz
test
35
30
25
20
15
10
5
0
1
0
5
10
15
20
25
30
1
10
100
1000
V
CB
, COLLECTOR−BASE VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Figure 11. Output Capacitance
Figure 12. fT, Current Gain Bandwidth Product
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4
NSS60200SMT
TYPICAL CHARACTERISTICS
2.5
2.0
1.5
1.0
T = 25°C
A
0.5
0
0
25
50
75
100
125
150
TEMPERATURE (°C)
Figure 13. Power Derating
100
Duty Cycle = 0.5
0.20
0.10
0.05
10
1
0.02
0.01
Single Pulse
0.1
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 14. Thermal Resistance by Transistor
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 506AN
ISSUE H
DATE 25 JAN 2022
GENERIC
MARKING DIAGRAM*
1
XX M
XX = Specific Device Code
M
= Date Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON20861D
WDFN6 2x2, 0.65P
PAGE 1 OF 1
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