NSVBASH19LT1G [ONSEMI]
高压开关二极管，+175°C;
| 型号： | NSVBASH19LT1G |
| 厂家： | 
ONSEMI |
| 描述： | 高压开关二极管，+175°C 开关 高压 测试 光电二极管 |
| 文件： | 总6页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Switching Diode, High
Voltage, High Temperature
HIGH VOLTAGE
SWITCHING DIODE
SOT−23
BASH19L Series
3
1
CATHODE
ANODE
Features
• 175°C T
− Rated for High Temperature, Mission Critical
J(MAX)
Applications
3
• NSV Prefixes for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
1
2
SOT−23 (TO−236)
CASE 318
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
STYLE 8
MAXIMUM RATINGS
MARKING DIAGRAM
Rating
Symbol
Value
Unit
3
Continuous Reverse Voltage
V
R
Vdc
120
200
250
BASH19
BASH20
BASH21
xxx MG
G
1
2
Repetitive Peak Reverse Voltage
BASH19
V
Vdc
RRM
120
200
250
AD7
AC7
AA7
M
= BASH19L
= BASH20L
= BASH21L
= Date Code
= Pb−Free Package
BASH20
BASH21
Continuous Forward Current
Peak Forward Surge Current
I
F
200
2
mAdc
A
G
I
FSM
(Note: Microdot may be in either location)
(1/2 Cycle, Sine Wave, 60 Hz)
Repetitive Peak Forward Current
I
0.6
A
FRM
ORDERING INFORMATION
(Pulse Train: T = 1 s, T
= 0.5 s)
ON
OFF
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Junction and Storage Temperature
Range
T , T
−55 to +175
°C
J
stg
Electrostatic Discharge
ESD
HM < 500
MM < 400
V
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
June, 2023 − Rev. 3
BASH19L/D
BASH19L Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
P
D
300
mW
(Note 1)
T = 25°C
Derate above 25°C
A
1.8
mW/°C
Thermal Resistance Junction−to−Ambient (SOT−23)
R
340
400
°C/W
ꢀ
JA
Total Device Dissipation Alumina Substrate
(Note 2)
P
mW
D
T = 25°C
Derate above 25°C
A
2.4
mW/°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature Range
R
250
°C/W
°C
ꢀ
JA
T , T
J
−55 to +175
stg
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
Reverse Voltage Leakage Current
I
R
ꢁ
A
d
c
(V = 100 Vdc)
BASH19
BASH20
BASH21
BASH19
BASH20
BASH21
−
−
−
−
−
−
0.1
0.1
0.1
100
100
100
R
(V = 150 Vdc)
R
(V = 200 Vdc)
R
(V = 100 Vdc, T = 175°C)
R
J
(V = 150 Vdc, T = 175°C)
R
J
(V = 200 Vdc, T = 175°C)
R
J
Reverse Breakdown Voltage
(I = 100 ꢁ Adc)
V
Vdc
Vdc
(BR)
BASH19
BASH20
BASH21
120
200
250
−
−
−
BR
(I = 100 ꢁ Adc)
BR
(I = 100 ꢁ Adc)
BR
Forward Voltage
V
C
F
(I = 100 mAdc)
−
−
1.0
1.25
F
(I = 200 mAdc)
F
Diode Capacitance (V = 0, f = 1.0 MHz)
−
−
5.0
50
pF
ns
R
D
Reverse Recovery Time (I = I = 30 mAdc, I
= 3.0 mAdc, R = 100)
t
rr
F
R
R(REC)
L
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 ꢂ
I
F
+10 V
t
r
t
p
t
2.0 k
0.1 ꢁ F
I
F
t
t
100 ꢁ H
rr
10%
90%
0.1 ꢁ F
D.U.T.
I
= 3.0 mA
R(REC)
50 ꢂ OUTPUT
PULSE
GENERATOR
50 ꢂ INPUT
SAMPLING
OSCILLOSCOPE
I
R
V
R
OUTPUT PULSE
(I = I = 30 mA; MEASURED
INPUT SIGNAL
F
R
at I
= 3.0 mA)
R(REC)
Notes: 1. A 2.0 kꢂ variable resistor adjusted for a Forward Current (I ) of 30 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 30 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2
BASH19L Series
TYPICAL CHARACTERISTICS
100
10
200
20
175°C
125°C
85°C
175°C
1
125°C
85°C
0.1
0.01
2.0
0.2
25°C
0.001
25°C
-55°C
0.0001
180 210 240
270
0.2
0.4
0.6
0.8
1.0
1.2
0
30
60
90
120 150
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 2. Forward Voltage
Figure 3. Leakage Current
1.2
1.1
1.0
30
25
20
Based on square wave currents
T = 25°C prior to surge
T = 25°C
A
f = 1 MHz
J
0.9
0.8
0.7
0.6
0.5
0.4
15
10
5
0
0
2
4
6
8
10
0.001
0.01
0.1
1
10
100
1000
V , REVERSE VOLTAGE (V)
R
t , PULSE ON TIME (ms)
p
Figure 4. Capacitance
Figure 5. Forward Surge Current
ORDERING INFORMATION
Device
†
Package
Shipping
BASH19LT1G
SOT−23
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
(Pb−Free)
NSVBASH19LT1G*
BASH20LT1G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
NSVBASH20LT1G*
BASH21LT1G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
NSVBASH21LT1G*
SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable − release available upon request.
www.onsemi.com
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XXXMG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1. EMITTER
2. BASE
STYLE 8:
PIN 1. BASE
PIN 1. ANODE
2. EMITTER
3. COLLECTOR
2. NO CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
STYLE 10:
STYLE 11:
PIN 1. ANODE
2. CATHODE
STYLE 12:
STYLE 13:
PIN 1. SOURCE
2. DRAIN
STYLE 14:
PIN 1. CATHODE
2. GATE
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. CATHODE
2. CATHODE
3. ANODE
3. CATHODE
3. CATHODE−ANODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. CATHODE
2. ANODE
PIN 1. GATE
2. CATHODE
3. ANODE
PIN 1. ANODE
2. CATHODE
3. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE−ANODE
3. CATHODE
3. GATE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1. ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1. GATE
2. SOURCE
3. DRAIN
PIN 1. RETURN
2. OUTPUT
3. INPUT
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. GATE
PIN 1. CATHODE
2. ANODE
3. SOURCE
3. NO CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
PIN 1. ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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