NSVS1001CLTWG [ONSEMI]
Bipolar Transistor -100V, -2.5A PNP Low VCE(sat) PNP Single LFPAK8;
| 型号： | NSVS1001CLTWG |
| 厂家： | 
ONSEMI |
| 描述： | Bipolar Transistor -100V, -2.5A PNP Low VCE(sat) PNP Single LFPAK8 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：396K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Bipolar Transistor
-100 V, -2.5 A, Low VCE(sat) PNP
Single LFPAK
LFPAK8 3.3x3.3, 0.65P
CASE 760AD
NSS1001CL
ELECTRICAL CONNECTION
This device is bipolar junction transistor featuring high current, low
saturation voltage, and high speed switching.
Suitable for automotive applications. AEC−Q101 qualified and
PPAP capable. (NSVS1001CLTWG)
Features
• Complement to NSS1002CL
• Large Current Capacitance
• Low Collector to Emitter Saturation Voltage
• Thin Profile LFPAK8 3.3 x 3.3 Package
• High−Speed Switching
MARKING DIAGRAM
NSS
1001G
AWLYW
• High Allowable Power Dissipation
• AEC−Q101 Qualified and PPAP Capable (NSVS1001CLTWG)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
NSS1001 = Specific Device Code
= Assembly Location
WL = Wafer Lot
A
Compliant
Y
W
G
= Year
= Work Week
= Pb−Free Package
Typical Applications
• Load Switch
• Gate Driver Buffer
• DC−DC Converters
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Specifications
ABSOLUTE MAXIMUM RATING at Ta = 25°C
Parameter
Collector−to−Base Voltage
Collector−to−Emitter Voltage
Emitter−to−Base Voltage
Collector Current
Symbol
Value
−120
−100
−7
Unit
V
V
CBO
V
CEO
V
EBO
V
V
I
C
−2.5
A
Collector Current (Pulse)
Collector Dissipation
I
−4
A
CP
P
P
(Note 1)
(Note 2)
0.8
W
C
2.2
C
Junction Temperature
T
175
°C
°C
J
Storage Temperature Range
T
stg
−55 to +175
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Mounted on FRB with minimum pad of Copper 2 oz
2. Mounted on FRB with 1 in/sq pad of Copper 2 oz
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
February, 2022 − Rev. 0
NSS1001CL/D
NSS1001CL
ELECTRICAL CHARACTERISTICS at Ta = 25°C
Value
Typ
Min
Max
Parameter
Collector Cutoff Current
Symbol
Conditions
Unit
I
VCB = −120 V
−0.1
mA
CBO
IE = 0 A
Emitter Cutoff Current
I
VEB = −7 V
IC = 0 A
−0.1
mA
EBO
DC Current Gain
h
FE
VCE = −5 V
IC = −100 mA
140
400
Gain−Bandwidth Product
Output Capacitance
f
VCE = −10 V
IC = −100 mA
200
24
MHz
pF
V
T
C
VCB = −10 V
f = 1 MHz
ob
Collector−to−Emitter Saturation Voltage
V
V
V
IC = −100 mA
IB = −10 mA
−0.025
−0.08
−0.3
−0.05
−0.16
−0.6
CE(sat)1
CE(sat)2
CE(sat)3
IC = −1 A
IB = −100 mA
V
IC = −2.5 A
IB = −250 mA
V
Base−to−Emitter Saturation Voltage
V
IC = −1 A
IB = −100 mA
−0.85
−1.2
V
BE(sat)
Collector−to−Base Breakdown Voltage
Collector−to−Emitter Breakdown Voltage
Emitter−to−Base Breakdown Voltage
Turn−On Time
V
V
V
IC = −10 mA, IE = 0 A
IC = −1 mA, RBE = ∞
IE = −10 mA, IC = 0 A
See Figure 1
−120
−100
−7
V
V
(BR)CBO
(BR)CEO
(BR)EBO
V
t
on
24
440
20
ns
ns
ns
Storage Time
t
stg
Fall Time
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
RB
100
IC=10|B1=−10|B2=−1A
Figure 1. Switching Time Test Circuit
ESD RATING
Parameter
Symbol
HBM
Value
>2000, <4000
>400
Unit
V
Class
2
Electrostatic Discharge − Human Body Model
Electrostatic Discharge − Machine Model
MM
V
M4
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2
NSS1001CL
TYPICAL CHARACTERISTICS
1.8
1.6
1.4
1.2
1
1200
80mA
120mA
IB = 160mA
140mA
100mA
60mA
40mA
1000
800
600
400
200
0
TA = −55°C
25°C
20mA
5mA
0.8
0.6
0.4
0.2
0
175°C
TA = 25°C
0
0.2
0.4
0.6
0.8
1
1
10
100
1000
5000
VCE, Collector to Emitter Voltage (V)
IC, Collector Current (mA)
Figure 2. IC − VCE
Figure 3. VBE − IC
1
0.1
1000
100
10
TA = 175°C
VCE = −5 V
IC / IB = 5
25°C
−55°C
TA = 175°C
−55°C
0.01
25°C
1
0.001
1
10
100
1000
5000
10
100
1000
5000
IC, Collector Current (mA)
IC, Collector Current (mA)
Figure 5. VCE(sat) − IC
Figure 4. hFE − IC
10
1
10
IC / IB = 10
IC / IB = 10
−55°C
1
25°C
0.1
TA = 175°C
TA = 175°C
−55°C
25°C
0.01
0.1
10
100
1000
5000
10
100
1000
5000
IC, Collector Current (mA)
IC, Collector Current (mA)
Figure 6. VCE(sat) − IC
Figure 7. VBE(sat) − IC
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3
NSS1001CL
TYPICAL CHARACTERISTICS
10
1
1000
VCE = −10 V
TA = 25°C
TA = 25°C
IC / IB = 10
100
0.1
IC / IB = 5
10
0.01
0.001
1
10
100
1000
5000
1
10
100
1000
5000
IC, Collector Current, (mA)
IC, Collector Current, (mA)
Figure 8. VCE(sat) − IC
Figure 9. fT − IC
100
10
1
10
f = 1 MHz
TA = 25°C
PT = 1 ms
10 ms
DC Operation
1
0.1
PC = 2.2 W
PC = 0.8 W
TA = 25°C
Single Pulse
mounted on FRB
100 ms
0.01
0.001
1
10
100
0.01
0.1
1
10
100 200
VCB, Collector−to−Base Voltage (V)
Figure 10. Cob − VCB
VCE, Collector−to−Emitter Voltage (V)
Figure 11. Safe Operating Area
Mounted on FRB with 1 in/sq
pad of Copper 2 oz
2
1
0
Mounted on FRB with
minimum pad of Copper 2 oz
0
50
100
150
200
Ta, Ambient Temperature (°C)
Figure 12. Power Derating
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4
NSS1001CL
ORDERING INFORMATION
Device
†
Marking
Package
Shipping (Qty / Packing)
NSVS1001CLTWG
NSS1001G
LFPAK8
(Pb−Free / Halogen Free)
3,000 / Tape & Reel
NSS1001CLTWG
NSS1001G
LFPAK8
(Pb−Free / Halogen Free)
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
LFPAK8 3.3x3.3, 0.65P
CASE 760AD
ISSUE E
DATE 16 NOV 2020
GENERIC
MARKING DIAGRAM*
XXXXX
XXXXX
AWLYW
XXXX = Specific Device Code
A
= Assembly Location
WL = Wafer Lot
Y
= Year
W
= Work Week
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON05544H
LFPAK8 3.3x3.3, 0.65P
PAGE 1 OF 1
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