NSVS50031SB3T1G [ONSEMI]
双极晶体管，50V，3A，低饱和压，NPN 单;
| 型号： | NSVS50031SB3T1G |
| 厂家： | 
ONSEMI |
| 描述： | 双极晶体管，50V，3A，低饱和压，NPN 单 晶体管 |
| 文件： | 总7页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSVS50030SB3,
NSVS50031SB3
Bipolar Transistor (- )50 V,
(- )3 A, Low VCE(sat),
(PNP)NPN Single
www.onsemi.com
This device is bipolar junction transistor featuring high current, low
saturation voltage, and high speed switching.
Suitable for motor driver, relay driver, DC−DC converter of
automotive applications. AEC−Q101qualified and PPAP capable.
ELECTRICAL CONNECTION
3
3
Features
1
1
• Large Current Capacitance
• Low Collector to Emitter Saturation Voltage
• High−Speed Switching
2
2
• High Allowable Power Dissipation
• AEC−Q101Qualified and PPAP Capable
• Pb−Free, Halogen Free and RoHS Compliance
NSVS50030SB3
NSVS50031SB3
3
• Ultra Small Package Facilitates Miniaturization in End Products
(Mounting Height: 0.9 mm)
1
2
Typical Applications
• DC / DC Converter
• Relay Drivers, Lamp Drivers, Motor Drivers
• Flash
CPH3
CASE 318BA
Specifications
MARKING DIAGRAMS
ABSOLUTE MAXIMUM RATINGS at T = 25°C
A
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
Value
(−50) 100
(−50) 100
(−)50
Unit
V
XXXM
V
CBO
V
V
CES
CEO
EBO
V
V
V
(−)6
V
XXX
M
= HAE: NSVS50030SB3
= HCE: NSVS50031SB3
= Single Digit Date Code
I
C
(−)3
A
Collector Current (Pulse)
Base Current
I
(−)6
A
CP
I
B
(−)600
1.1
mA
W
_C
_C
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Collector Dissipation (Note 1)
Junction Temperature
Storage Temperature
P
C
Tj
Tstg
175
−55 to +175
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface mounted on ceramic substrate. (600 mm x 0.8 mm)
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
December, 2018 − Rev. 1
NSVS50030SB3/D
NSVS50030SB3, NSVS50031SB3
ORDERING INFORMATION
Device
Marking
HAE
Package
Shipping (Qty / Packing) †
NSVS50030SB3T1G
NSVS50031SBST1G
CPH3
3,000/ Tape & Reel
(Pb−Free / Halogen Free)
HCE
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Value
Min
Typ
Max
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
Conditions
Unit
μA
I
V
CB
V
EB
V
CE
= (−)40 V, I = 0 A
(−)1
(−)1
560
CBO
E
I
= (−)4 V, I = 0 A
μA
EBO
C
h
FE
= (−)2 V,
200
I
C
= (−)100 mA
Gain−Bandwidth Product
f
V
C
= (−)10 V,
(360) 380
(24) 13
MHz
pF
T
CE
I
= (−)500 mA
Output Capacitance
Cob
V
CB
= (−)10 V,
f = 1 MHz
Collector to Emitter Saturation Voltage
V
V
(sat)
I
B
= (−)1 A,
(−100) 80
(−200) 120
mV
mV
V
CE
C
I = (−)50 mA
I
C
= (−)2 A,
(−185) 140 (−500) 210
I = (−)100 mA
B
Base to Emitter Saturation Voltage
(sat)
I
C
= (−)2 A,
(−)0.88
(−)1.2
BE
I = (−)100 mA
B
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
V
I
I
= (−)10 mA, I = 0 A
(−50) 100
(−50) 100
V
V
(BR)CBO
C
E
V
= (−)100 mA,
(BR)CES
C
R
= 0 W
BE
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
V
V
I
= (−)1 mA, R = ∞
(−)50
(−)6
V
V
(BR)CEO
C
BE
I = (−)10 mA,
(BR)EBO
E
C
I
= 0 A
Turn−On Time
Storage Time
Fall Time
t
See Fig.1
(30) 35
(230) 300
(15) 22
ns
ns
ns
on
t
stg
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
I
I
I
I
B1
B2
B1
PW=20 ms
DC ≤ 1%
PW=20 ms
DC ≤ 1%
B2
OUTPUT
OUTPUT
INPUT
INPUT
R
R
B
B
V
R
R
L
V
R
L
R
+
+
+
+
50 W
50 W
100 mF 470 mF
100 mF 470 mF
V
BE
= 5 V
V
CC
= −25 V
V
BE
= −5 V
V
CC
= 25 V
10I = −10I = I = −1 A
10I = −10I = I = 1 A
B1
B2
C
B1
B2
C
NSVS50031SB3
NSVS50030SB3
Figure 1. Switching Time Test Circuit
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2
NSVS50030SB3, NSVS50031SB3
TYPICAL PERFORMANCE CHARACTERISTICS
−2.0
−1.6
−1.2
−0.8
5.0
−20 mA
NSVS50030SB3 −40 mA
−30 mA
NSVS50031SB3 100 mA
80 mA
60 mA
4.5
4.0
3.5
3.0
−10 mA
−8 mA
40 mA
− 6 mA
20 mA
10 mA
2.5
2.0
1.5
1.0
0.5
0
−4 mA
−2 mA
5 mA
−0.4
I
B
= 0 mA
I = 0 mA
B
0
0
−0.2
−0.4
−0.6
−0.8
−1.0
0
0.4
0.8
1.2
1.6
2.0
1.0
3
V
, Collector−to−Emitter Voltage [V]
V
, Collector−to−Emitter Voltage [V]
CE
CE
Figure 2. IC − VCE
Figure 3. IC − VCE
3.0
2.5
2.0
1.5
1.0
3.0
2.5
2.0
1.5
NSVS50031SB3
= 2 V
NSVS50030SB3
= −2 V
V
V
CE
CE
T = 75°C
A
T = 75°C
A
1.0
25°C
25°C
0.5
0
0.5
0
−25°C
−25°C
0.8
0
0.2
0.4
0.6
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
, Base−to−Emitter Voltage [V]
BE
V
, Base−to−Emitter Voltage [V]
BE
Figure 4. IC − VBE
Figure 5. IC − VBE
1000
1000
7
NSVS50031SB3
= 2 V
NSVS50030SB3
7
5
3
2
V
V
CE
= −2 V
CE
T = 75°C
A
5
3
2
T = 75°C
A
−25°C
−25°C
25°C
25°C
100
7
100
7
5
5
3
3
2
2
10
0.01
10
−0.01 2
3
5 7 −0.1
2
3
5 7 −1.0 2 3
2
3
5 7 0.1
2
3
5 7 1.0
2
I , Collector Current [A]
C
I , Collector Current [A]
C
Figure 6. hFE − IC
Figure 7. hFE − IC
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3
NSVS50030SB3, NSVS50031SB3
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
1000
1000
NSVS50031SB3
= 10 V
NSVS50030SB3
7
5
7
V
V
CE
= −10 V
CE
5
3
2
3
2
100
7
100
7
5
5
3
2
3
2
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
5
−0.01 2 3 5 7−0.1 2 3 5 7−1.0 2 3
5
I , Collector Current [A]
C
I , Collector Current [A]
C
Figure 8. fT − IC
Figure 9. fT − IC
100
7
100
7
NSVS50030SB3
f = 1 MHz
NSVS50031SB3
f = 1 MHz
5
5
3
2
3
2
10
7
5
3
2
10
−1.0
2
3
5
7
−10
2
3
5
7
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7
V
CB
, Collector−to−Base Voltage [V]
V
CB
, Collector−to−Base Voltage [V]
Figure 10. Cob − VCB
Figure 11. Cob − VCB
−10000
1000
NSVS50030SB3
/ I = 20
NSVS50031SB3
I / I = 20
C
7
5
3
7
5
3
2
I
C
B
B
2
−1000
7
5
100
7
3
2
−100
T = 75°C
A
T = 75°C
A
5
3
2
−25°C
7
5
3
−25°C
25°C
25°C
2
−10
10
−0.01 2 3 5 7−0.1 2 3 5 7−1.0 2 3 5 7−10
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
5
I , Collector Current [A]
C
I , Collector Current [A]
C
Figure 12. VCE(sat) − IC
Figure 13. VCE(sat) − IC
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4
NSVS50030SB3, NSVS50031SB3
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
−10000
1000
7
NSVS50030SB3
/ I = 50
NSVS50031SB3
7
I
I
C
/ I = 50
B
5
3
C
B
5
2
−1000
7
3
2
5
100
7
3
T = 75°C
A
T = 75°C
A
2
−100
7
5
3
−25°C
5
−25°C
3
2
25°C
25°C
2
−10
10
−0.01 2 3 5 7−0.1 2 3 5 7−1.0 2 3 5 7−10
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
5
I , Collector Current [A]
C
I , Collector Current [A]
C
Figure 14. VCE(sat) − IC
Figure 15. VCE(sat) − IC
5
5
NSVS50030SB3
/ I = 50
NSVS50031SB3
I / I = 50
C
I
3
2
3
2
C
B
B
T = −25°C
A
−1000
1000
T = −25°C
A
7
5
7
5
75°C
75°C
25°C
25°C
3
2
3
2
−100
100
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
5
−0.01 2 3 5 7 −0.1 2 3 5 7 −1.0 2 3 5 7−10
I , Collector Current [A]
C
I , Collector Current [A]
C
Figure 16. VBE(sat) − IC
Figure 17. VBE(sat) − IC
10
1.2
500Ăms
1.1
1.0
0.9
1 ms
100 ms
10 ms
DC operation
1
0.8
0.7
100 ms
0.6
0.5
0.4
0.3
0.2
NSVS50030SB3/
0.1 NSVS50031SB3
T
A
= 25°C
Single Pulse
Mounted on a ceramic board
2
(600 mm x 0.8 mm)
0.1
0
For PNP minus sign is omitted.
0.01
0.1
1
10
100
0
25 50 75 100 125 150 175 200
V
CE,
Collector−to−Emitter Voltage [V]
T , Ambient Temperature [5C]
A
Figure 18. ASO
Figure 19. PC − TA
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
CPH3
CASE 318BA
ISSUE O
DATE 30 NOV 2011
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON65437E
CPH3
PAGE 1 OF 1
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