NTB5404N [ONSEMI]
Power MOSFET 40 V, 136 A, Single N−Channel, D2PAK & TO−220; 功率MOSFET的40 V ， 136 A单N沟道， D2PAK和TO- 220
| 型号： | NTB5404N |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 40 V, 136 A, Single N−Channel, D2PAK & TO−220 |
| 文件： | 总7页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTB5404N, NTP5404N
Power MOSFET
40 V, 136 A, Single N−Channel, D2PAK &
TO−220
Features
• Low R
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DS(on)
• High Current Capability
• Low Gate Charge
I
MAX
D
V
R
TYP
DS(ON)
(Note 1)
(BR)DSS
• This is a Pb−Free Device
40 V
3.5 mΩ @ 10 V
136 A
Applications
D
• Electronic Brake Systems
• Electronic Power Steering
• Bridge Circuits
N−Channel
G
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
S
Parameter
Drain−to−Source Voltage
Symbol
Value Units
V
DSS
40
±20
136
96
V
V
A
MARKING
DIAGRAMS
Gate−to−Source Voltage
V
GS
Continuous Drain
I
D
T
= 25°C
C
Steady
State
Current − R
(Note 1)
ꢀ
JC
T
C
= 100°C
2
D PAK
CASE 418B
STYLE 2
Power Dissipation −
(Note 1)
Steady
State
P
D
167
W
NTB5404NG
AYWW
T
C
= 25°C
1
R
ꢀ
JC
2
3
Pulsed Drain Current
t = 10 ꢁ s
I
258
A
p
DM
Operating Junction and Storage Temperature
T ,
STG
−55 to
175
°C
J
T
1
4
Source Current (Body Diode) Pulsed
I
S
75
A
Single Pulse Drain−to Source Avalanche
EAS
1000
mJ
Energy − (V = 50 V, V = 10 V, I = 45 A,
DD
GS
PK
L = 1 mH, R = 25 ꢂ)
G
TO−220AB
CASE 221A
STYLE 5
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
260
°C
T
L
NTP5404NRG
AYWW
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
2
3
THERMAL RESISTANCE RATINGS
G
A
Y
= Pb−Free Device
= Assembly Location
= Year
Parameter
Junction−to−Case (Drain)
Symbol
Max
Units
R
0.9
°C/W
θ
JC
WW
= Work Week
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
ORDERING INFORMATION
Device
Package
Shipping†
2
NTB5404NT4G
D PAK
800 / Tape & Reel
(Pb−Free)
NTP5404NRG
TO−220
50 Units / Rail
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
July, 2010 − Rev. 2
NTB5404N/D
NTB5404N, NTP5404N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 ꢁ A
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
34
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
GS
V
DS
= 0 V,
= 40 V
T = 25°C
1.0
10
ꢁ
A
DSS
J
T = 100°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
= 0 V, V = ±30 V
±100
nA
GSS
DS
GS
V
V
GS
= V , I = 250 ꢁ A
1.5
3.5
V
GS(TH)
DS
D
Gate Threshold Temperature
Coefficient
V
/T
−8.2
mV/°C
GS(TH)
J
Drain−to−Source On Resistance
R
V
= 10 V, I = 40 A
3.5
5.1
35
4.5
7.0
mꢂ
DS(on)
GS
D
V
GS
= 5.0 V, I = 15 A
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
= 10 V, I = 15 A
S
DS
D
C
4300
1075
450
125
5.5
7000
1700
1000
pF
nC
ISS
V
GS
= 0 V, f = 1.0 MHz,
Output Capacitance
C
C
OSS
RSS
V
DS
= 32 V
Reverse Transfer Capacitance
Total Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(TH)
V
= 10 V, V = 32 V,
DS
GS
I
D
= 40 A
Q
12.5
55
GS
GD
Q
SWITCHING CHARACTERISTICS, V = 10 V (Note 3)
GS
Turn−On Delay Time
Rise Time
t
10
65
85
85
ns
ns
d(ON)
t
r
V
= 10 V, V = 32 V,
GS
D
DD
I
= 40 A, R = 2.5 ꢂ
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
SWITCHING CHARACTERISTICS, V = 5 V (Note 3)
GS
Turn−On Delay Time
Rise Time
t
25
175
46
d(ON)
t
r
V
= 5 V, V = 20 V,
DD
GS
I
D
= 20 A, R = 2.5 ꢂ
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
62
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.8
0.65
75
1.1
V
SD
J
V
= 0 V,
GS
S
I = 20 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
38
a
V
= 0 V, dI /dt = 100 A/ꢁ s,
SD
GS
I = 20 A
S
Discharge Time
38
b
Reverse Recovery Charge
Q
140
nC
RR
2. Pulse Test: pulse width ≤ 300 ꢁ s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTB5404N, NTP5404N
TYPICAL PERFORMANCE CURVES
200
175
150
125
100
75
200
T = 25°C
V
GS
= 8 V to 10 V
7 V
J
V
DS
≥ 10 V
175
150
125
100
75
6 V
5 V
4.8 V
4.6 V
4.4 V
4.2 V
T = 25°C
J
50
50
25
0
4 V
3.8 V
25
0
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.01
0.01
0.009
0.008
0.007
0.006
T = 25°C
J
I
= 40 A
D
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
T = 25°C
J
V
GS
= 5 V
0.005
0.004
0.003
V
GS
= 10 V
0.002
3
4
5
6
7
8
9
10
20 30 40 50 60 70 80 90 100 110 120 130 140
I
D,
DRAIN CURRENT (AMPS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 4. On−Resistance vs. Drain Current and
Figure 3. On−Resistance vs. Gate−to−Source
Gate Voltage
Voltage
100000
10000
1000
2.2
V
GS
= 0 V
I
V
= 40 A
D
2
1.8
1.6
1.4
1.2
1
= 10 V
GS
T = 175°C
J
T = 100°C
J
100
10
0.8
0.6
−50 −25
0
25
50
75 100 125 150 175
4
8
12
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
16
20
24
28
32
36
40
T , JUNCTION TEMPERATURE (°C)
J
V
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTB5404N, NTP5404N
TYPICAL PERFORMANCE CURVES
12000
10000
8000
12
36
V
= 0 V V = 0 V
GS
DS
T = 25°C
J
QT
C
10
8
30
24
18
12
iss
V
DS
V
GS
C
rss
6000
6
Q
GS
Q
GD
C
iss
4000
4
C
oss
2000
0
6
0
2
0
I
= 40 A
D
T = 25°C
C
J
rss
0
20
40
60
80
100
120
140
10
5
0
5
10
15 20 25
30 35 40
V
GS
V
DS
Q , TOTAL GATE CHARGE (nC)
G
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Gate−To−Source and
Figure 7. Capacitance Variation
Drain−To−Source Voltage vs. Total Charge
1000
40
35
30
25
20
15
10
t
V
= 32 V
= 40 A
= 10 V
V
GS
= 0 V
d(off)
DS
t
f
I
D
T = 25°C
J
t
r
V
GS
100
10
1
t
d(on)
5
0
1
10
100
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
R , GATE RESISTANCE (OHMS)
G
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
10 ꢁ s
100 ꢁ s
1 ms
10 ms
dc
V
= 10 V
GS
SINGLE PULSE
= 25°C
T
C
1
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTB5404N, NTP5404N
1.0
D = 0.5
0.2
0.1
P
(pk)
0.1
0.05
0.02
R
(t) = r(t) R
ꢀ
JC
ꢀ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
READ TIME AT t
1
1
0.01
SINGLE PULSE
t
2
T
J(pk)
− T = P
R
ꢀ
(t)
JC
C
(pk)
DUTY CYCLE, D = t /t
1
2
0.01
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
1.0
10
Figure 12. Thermal Response
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5
NTB5404N, NTP5404N
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
C
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
4.83
0.89
1.40
8.89
A
S
1
2
3
2.54 BSC
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
−T−
SEATING
PLANE
K
W
J
K
L
G
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
M
N
P
R
S
V
H
STYLE 2:
D 3 PL
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
M
M
T B
0.13 (0.005)
SOLDERING FOOTPRINT*
VARIABLE
CONFIGURATION
ZONE
10.49
L
M
8.38
16.155
F
3.25X04
VIEW W−W
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
NTB5404N, NTP5404N
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
S
B
F
T
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
4.09
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
A
K
Q
Z
1
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
J
V
G
U
V
Z
D
0.080
2.04
N
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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NTB5404N/D
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