NTB7D3N15MC [ONSEMI]
MOSFET - N-Channel Shielded Gate PowerTrench® 150 V, 7.3 mΩ, 101 A;
| 型号： | NTB7D3N15MC |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - N-Channel Shielded Gate PowerTrench® 150 V, 7.3 mΩ, 101 A 栅 |
| 文件： | 总7页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - N-Channel
Shielded Gate PowerTrench[
150 V, 7.3 mW, 101 A
NTB7D3N15MC
Features
www.onsemi.com
• Shielded Gate MOSFET Technology
• Max R
= 7.3 mW at V = 10 V, I = 62 A
GS D
DS(on)
• 50% Lower Qrr than other MOSFET Suppliers
• Lowers Switching Noise/EMI
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
150 V
7.3 mW @ 10 V
101 A
• 100% UIL Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
D
Typical Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
S
Parameter
Drain−to−Source Voltage
Symbol
Value
150
20
Unit
V
N−CHANNEL MOSFET
V
DSS
Gate−to−Source Voltage
V
GS
V
MARKING
DIAGRAM
Continuous Drain
Current R
I
D
101
A
q
JC
4
Steady
State
(Note 2)
T
= 25°C
C
Drain
Power Dissipation
P
D
166
W
A
4
R
(Note 2)
q
JC
NTB7D3
N15MC
AYWWZZ
Continuous Drain
Current R
I
D
15.2
1
2
3
2
D PAK
TO−263
q
JA
Steady
State
(Notes 1, 2)
T = 25°C
A
CASE 418AJ
Power Dissipation
P
D
3.75
488
W
1
2
3
R
(Notes 1, 2)
q
JA
Gate Drain Source
Pulsed Drain Current
T
C
= 25°C, t = 100 ms
I
DM
A
p
NTB7D3N15MC = Specific Device Code
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
A
Y
= Assembly Location
= Year
WW
ZZ
= Work Week
= Lot Traceability
Single Pulse Drain−to−Source Avalanche
E
600
260
mJ
AS
Energy (I = 20 A , L = 3 mH)
L
pk
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
°C
L
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
NTB7D3N15MC
Package
Shipping
2
1. Surface−mounted on FR4 board using a 1 in , 2 oz. Cu pad.
2
800 / Tape &
Reel
D PAK
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
December, 2020 − Rev. 1
NTB7D3N15MC/D
NTB7D3N15MC
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.9
Unit
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Notes 1, 2)
R
°C/W
q
JC
R
40
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
150
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
71
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
1.0
DSS
GSS
GS
J
mA
V
= 120 V
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= 0 V, V
=
20 V
100
nA
DS
GS
Gate Threshold Voltage
V
V
GS
= V , I = 342 mA
2.5
4.5
V
GS(TH)
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I = 342 mA, ref to 25°C
D
−7.3
6.0
mV/°C
GS(TH)
J
R
V
GS
= 10 V, I = 62 A
7.3
8.4
DS(on)
D
mW
V
GS
= 8 V, I = 31 A
6.5
D
Forward Transconductance
g
FS
V
DS
= 10 V, I = 62 A
119
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
4250
1250
15
ISS
Output Capacitance
C
OSS
C
RSS
V
GS
= 0 V, f = 1 MHz, V = 75 V
pF
DS
Reverse Transfer Capacitance
Gate−Resistance
R
0.8
53
1.6
W
G
Total Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
14
G(TH)
nC
Q
23
V
GS
= 10 V, V = 75 V; I = 62 A
GS
GD
GP
DS
D
Q
V
8.5
5.8
133
V
Output Charge
Q
V
DD
= 75 V, V = 0 V
nC
OSS
GS
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
t
27
8.5
33
d(ON)
t
r
V
= 10 V, V = 75 V,
DD
GS
D
ns
I
= 62 A, R = 4.7 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
5.8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
S
= 0 V,
T = 25°C
J
0.93
1.2
GS
V
I
= 62 A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
t
55
ns
RR
V
S
= 0 V, V = 75 V
DD
GS
dI /dt = 300 A/ms, I = 62 A
S
Q
247
50
nC
ns
RR
RR
t
RR
V
GS
= 0 V, V = 75 V
DD
dI /dt = 1000 A/ms, I = 62 A
S
S
Q
720
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NTB7D3N15MC
TYPICAL CHARACTERISTICS
6
5
4
240
180
120
10 V
V
GS
= 5.5 V
7.0 V
8.0 V
6 V
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
6.0 V
3
8 V
7 V
2
V
GS
= 5.5 V
60
0
1
0
10 V
0
2
4
6
8
10
0
4
0
60
120
180
240
V
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
DS
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
40
30
20
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
V
= 62 A
= 10 V
D
I
D
= 62 A
GS
T = 150°C
J
10
0
T = 25°C
J
0.8
0.6
−75 −50 −25
0
25 50 75 100 125 150 175
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance vs.
Figure 4. On−Resistance vs. Gate−to−Source
Junction Temperature
Voltage
240
180
120
300
100
V
= 10 V
V
= 0 V
DS
GS
10
1
T = 25°C
J
T = 175°C
0.1
J
60
0
0.01
T = 175°C
J
T = 25°C
J
T = −55°C
J
T = −55°C
J
0.001
2
3
4
5
6
7
8
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
SD
0.4
0.6
0.8
1.0
1.2
1.4
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics
Figure 6. Source−to−Drain Diode Forward
Voltage vs. Source Current
www.onsemi.com
3
NTB7D3N15MC
TYPICAL CHARACTERISTICS
10
8
10K
C
V
DD
= 50 V
ISS
I
D
= 62 A
C
OSS
V
DD
= 75 V
V
DD
= 100 V
1K
6
100
4
C
RSS
10
1
2
0
f = 1 MHz
= 0 V
V
GS
0
15
30
Q , GATE CHARGE (nC)
45
60
0.1
1
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
100 150
V
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain−to−Source
Voltage
120
90
100K
10K
1K
V
= 10 V
= 8 V
GS
V
GS
60
100
10
30
0
R
= 0.9°C/W
q
JC
25
50
75
100
125
150
175
0.00001 0.0001
0.001
0.01
0.1
1
T , CASE TEMPERATURE (°C)
C
t, PULSE WIDTH (s)
Figure 9. Drain Current vs. Case Temperature
Figure 10. Peak Power
100
1000
10 ms
T
= 25°C
J(initial)
100
10
T
= 100°C
J(initial)
T
= 150°C
J(initial)
100 ms
10
T
= 25°C
1 ms
C
Single Pulse
10 ms
10
R
= 0.9°C/W
q
JC
1
R
Limit
DS(on)
Thermal Limit
Package Limit
100 ms/DC
100 200
1
0.1
0.001 0.01
0.1
1
10
100
1000
0.1
1
t , TIME IN AVALANCHE (mS)
AV
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Unclamped Inductive Switching
Capability
Figure 12. Forward Bias Safe Operating Area
www.onsemi.com
4
NTB7D3N15MC
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
P
DM
Notes:
= 0.9°C/W
0.01
Single Pulse
0.01
R
qJC
t
Peak T = P
x Z
(t) + T
JC C
1
q
J
DM
Duty Cycle, D = t /t
t
2
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Impedance
www.onsemi.com
5
NTB7D3N15MC
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE E
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
ON Semiconductor Website: www.onsemi.com
◊
www.onsemi.com
相关型号：
NTB8N50
Power Field-Effect Transistor, 8A I(D), 500V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
MOTOROLA
©2020 ICPDF网 联系我们和版权申明