NTBG014N120M3P [ONSEMI]
Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L;
| 型号： | NTBG014N120M3P |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L |
| 文件： | 总8页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
14ꢀmohm, 1200ꢀV, M3P,
D2PAK-7L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1200 V
20 mW @ 18 V
104 A
N−CHANNEL MOSFET
Drain
(TAB)
NTBG014N120M3P
Features
• Typ. R
= 14 mW
DS(on)
Gate
(Pin 1)
• Low Switching Losses (Typ. E 1331 mJ at 74 A, 800 V)
ON
• 100% Avalanche Tested
Driver
Source
(Pin 2)
Power Source
(Pin 3, 4, 5, 6, 7)
Typical Applications
• Solar Inverters
• Electric Vehicle Charging Stations
• UPS (Uninterruptible Power Supplies)
• Energy Storage Systems
• SMPS (Switch Mode Power Supplies)
D2PAK−7L
CASE 418BJ
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Drain−to−Source Voltage
Value
Unit
V
V
DSS
1200
MARKING DIAGRAM
V
GS
Gate−to−Source Voltage
−10
+22
V
V
GSop
Recommended
Operation Values of
Gate−Source
Voltage
T
C
< 175°C
−3/+18
V
BG014N
120M3P
I
Continuous Drain
Steady
State
T
T
= 25°C
104
454
73
A
W
A
D
C
AYWWZZ
Current R
(Note 2)
θ
JC
P
D
Power Dissipation R
(Note 2)
θ
JC
A
Y
WW
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
I
D
Continuous Drain
Current R
Steady
State
= 100°C
C
θ
JC
(Note 1, 2)
BG014N120M3P = Specific Device Code
P
Power Dissipation R
(Note 1, 2)
227
257
W
A
D
qJC
I
Pulsed Drain
Current (Note 3)
T
A
= 25°C
DM
ORDERING INFORMATION
T , T
J
Operating Junction and Storage Temperature
−55 to 175
92
°C
A
STG
†
Device
Package
Shipping
I
S
Source Current (Body Diode) T = 25°C, V = −3 V
C
GS
NTBG014N120M3P
D2PAK−7L
800 /
Tape & Reel
E
AS
Single Pulse Drain−to−Source Avalanche Energy
(Note 5) (I = 28.9 A , L = 1 mH) (Note 4)
418
mJ
L
pk
T
Maximum Lead Temperature for Soldering,
1/8″ from Case for 10 seconds
245
°C
L
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface mounted on a FR−4 board using 1 in pad of 2 oz copper.
2. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
3. Repetitive rating, limited by max junction temperature.
4. Peak current might be limited by transconductance.
5. E of 418 mJ is based on starting T = 25°C; L = 1 mH, I = 28.9 A,
AS
DD
J
AS
V
= 100 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
January, 2023 − Rev. 2
NTBG014N120M3P/D
NTBG014N120M3P
THERMAL CHARACTERISTICS
Symbol
Parameter
Typ
0.33
−
Max
−
Unit
_C/W
_C/W
R
Thermal Resistance Junction−to−Case (Note 2)
θ
JC
JA
R
Thermal Resistance Junction−to−Ambient (Note 1, 2)
40
θ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF−STATE CHARACTERISTICS
V
Drain−to−Source Breakdown Voltage
V
I
= 0 V, I = 1 mA
1200
V
(BR)DSS
GS
D
V
/ T
Drain−to−Source Breakdown Voltage
Temperature Coefficient
= 1 mA, refer to 25_C
0.3
mV/_C
(BR)DSS
J
D
I
Zero Gate Voltage Drain Current
V
= 0 V, V = 1200 V,
100
1
mA
mA
DSS
GS
DS
T = 25_C
J
I
Gate−to−Source Leakage Current
V
GS
V
GS
V
GS
= +22/−10 V, V = 0 V
GSS
DS
ON−STATE CHARACTERISTICS
V
Gate Threshold Voltage
= V , I = 37 mA
2.08
−3
3.0
4.63
+18
20
V
V
GS(TH)
DS
D
V
Recommended Gate Voltage
Drain−to−Source On Resistance
GOP
R
= 18 V, I = 74 A,
14
29
16
27
29
mW
DS(on)
D
T = 25_C
J
V
GS
= 18 V, I = 74 A,
mW
mW
mW
S
D
T = 175_C
J
V
GS
= 15 V, I = 74 A,
27
D
T = 25_C
J
V
GS
= 15 V, I = 74 A,
D
T = 150_C
J
g
Forward Transconductance
V
DS
= 10 V, I = 74 A
FS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
C
Input Capacitance
V
V
= 0 V, f = 1 MHz,
= 800 V
6313
259
27
pF
nC
ISS
GS
DS
C
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
OSS
RSS
C
Q
V
V
= −3/18 V,
= 800 V,
= 74 A
337
43
G(TOT)
GS
DS
Q
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
G(TH)
I
D
Q
78
GS
Q
98
GD
R
f = 1 MHz
1.4
W
G
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
= −3/18 V, V = 800 V
24
40
ns
d(ON)
GS
DS
I
D
= 74 A, R = 2 W
G
t
r
Inductive Load (Note 6)
t
Turn−Off Delay Time
Fall Time
74
d(OFF)
t
f
14
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
1331
620
1951
mJ
ON
E
OFF
E
TOT
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2
NTBG014N120M3P
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
Parameter
Test Conditions
Min
Typ
Max
Unit
I
V
GS
V
GS
V
GS
= −3 V, T = 25_C
92
A
A
V
SD
C
Current
I
Pulsed Drain−Source Diode Forward
Current (Note 3)
= −3 V, T = 25_C
257
SDM
C
V
SD
Forward Diode Voltage
= −3 V, I = 74 A,
5.1
SD
T = 25_C
GS
J
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
V
= −3/18 V, I = 74 A,
37
347
12
ns
nC
mJ
A
RR
SD
dI /dt = 1000 A/ms, V,
S
Q
V
= 800 V
RR
DS
E
REC
I
19
RRM
t
t
19
ns
ns
A
Discharge Time
17
B
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. E /E
result is with body diode.
ON OFF
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3
NTBG014N120M3P
TYPICAL CHARACTERISTICS
2.0
300
250
V
GS
= 20 V
= 19 V
GS
V
GS
= 12 V
V
V
GS
= 15 V
1.5
1.0
0.5
0.0
200
150
V
= 20 V
V
= 18 V
GS
GS
V
GS
= 15 V
= 17 V
= 16 V
GS
V
= 19 V
GS
V
GS
V
= 18 V
GS
V
100
50
0
V
= 17 V
GS
V
= 16 V
GS
V
GS
= 12 V
T
C
= 25°C
T
C
= 25°C
0
50
100
150
200
250
300
0
2
4
6
8
10
V
DS
, Drain−Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
2.5
2.0
I
= 74 A
= 18 V
I = 74 A
D
D
120
90
V
GS
1.5
1.0
0.5
60
T = 150°C
J
30
T = 25°C
J
0
0
−55 −30
−5
20
45
70
95 120 145 170
5
8
11
14
17
20
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. On−Resistance Variation with
Temperature
Figure 4. On−Resistance vs.
Gate−to−Source Voltage
300
100
200
160
V
DS
= 10 V
V
GS
= −3 V
T = 175°C
J
120
80
40
0
T = −55°C
J
T = −55°C
T = 175°C
J
J
10
T = 25°C
J
T = 25°C
J
1
1
3
5
7
9
3
6
9
12
15
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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4
NTBG014N120M3P
TYPICAL CHARACTERISTICS (CONTINUED)
100000
10000
18
15
I
D
= 74 A
C
iss
12
9
V
= 800 V
DD
V
DD
= 400 V
C
oss
1000
100
V
DD
= 600 V
6
3
C
rss
10
1
0
f = 1 MHz
= 0 V
V
GS
−3
0
50
100
150
200
250
300
350
0.1
1
10
100
800
Q , Gate Charge (nC)
g
V
DS
, Drain to Source Voltage (V)
Figure 7. Gate−to−Source Voltage vs. Total
Charge
Figure 8. Capacitance vs. Drain to Source
Voltage
120
80
40
0
100
10
1
V
GS
= 18 V
T = 25°C
J
T = 150°C
J
R
= 0.33°C/W
q
JC
0.001
0.01
0.1
1
25
50
75
100
125
150
175
t
, Time in Avalanche (ms)
AV
T , Case Temperature (5C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100000
10000
1000
1000
100
Single Pulse
R
= 0.33°C/W
q
JC
T
= 25°C
C
10 ms
10
1
100 ms
1 ms
10 ms
Single Pulse
T = Max Rated
J
100 ms/
DC
0.1
R
= 0.33°C/W
= 25°C
q
JC
T
C
0.01
100
0.00001
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
V
DS
, Drain−Source Voltage (V)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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5
NTBG014N120M3P
TYPICAL CHARACTERISTICS (CONTINUED)
2500
2000
1500
1000
2500
E
tot
R
= 2 W
= 74 A
= 18/−3 V
R
V
V
= 2 W
G
G
I
D
= 800 V
DD
GS
2000
1500
1000
E
tot
V
GS
= 18/−3 V
E
on
E
on
E
off
E
off
500
0
500
0
10
30
50
70
90
110
500
600
700
, DRAIN VOLTAGE (V)
DD
800
900
1000
I , DRAIN CURRENT (A)
V
D
Figure 13. Switching Loss vs. Drain Current
Figure 14. Switching Loss vs. Drain Voltage
5000
4000
3000
2000
2500
2000
1500
1000
E
tot
I
V
V
= 74 A
I = 74 A
D
D
E
tot
= 800 V
R
= 2 W
DD
GS
G
= 18/−3 V
V
DD
V
GS
= 800 V
= 18/−3 V
E
on
E
on
E
off
E
off
1000
0
500
0
0
2
4
6
8
10
0
25
50
75
100
125
150
R , GATE RESISTANCE (W)
TEMPERATURE (5C)
Figure 16. Switching Loss vs. Temperature
G
Figure 15. Switching Loss vs. Gate Resistance
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
Notes:
0.01
Z
q
(t) = r(t) x R
q
JC
0.01
JC
R
= 0.33°C/W
q
JC
Peak T = P
x Z (t) + T
q
JC C
J
DM
Duty Cycle, D = t / t
1
2
0.001
0.00001
0.0001
0.001
t, Pulse Time (s)
0.01
0.1
1
Figure 17. Junction−To−Case Transient Thermal Response Curve
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK7 (TO−263−7L HV)
CASE 418BJ
ISSUE B
DATE 16 AUG 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84234G
D2PAK7 (TO−263−7L HV)
PAGE 1 OF 1
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