NTBV5605T4G [ONSEMI]
Power MOSFET -60 V, -18.5 A;
| 型号： | NTBV5605T4G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET -60 V, -18.5 A 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTB5605P, NTBV5605
Power MOSFET
-60 V, -18.5 A
P−Channel, D2PAK
http://onsemi.com
Features
• Designed for Low R
DS(on)
V
R
TYP
I MAX
D
(BR)DSS
DS(on)
• Withstands High Energy in Avalanche and Commutation Modes
• AEC Q101 Qualified − NTBV5605
−60 V
120 mW @ −5.0 V
−18.5 A
• These Devices are Pb−Free and are RoHS Compliant
P−Channel
Applications
D
• Power Supplies
• PWM Motor Control
• Converters
• Power Management
G
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol Value
Unit
V
MARKING DIAGRAM
& PIN ASSIGNMENT
V
−60
$20
−18.5
DSS
4
Gate−to−Source Voltage
V
V
GS
Drain
Continuous Drain
Current (Note 1)
Steady
State
T = 25°C
I
D
A
A
4
Power Dissipation
(Note 1)
Steady
State
T = 25°C
A
P
D
88
W
NTB5605xG
AYWW
2
1
3
Pulsed Drain Current
t = 10 ms
I
−55
A
p
DM
2
D PAK
CASE 418B
STYLE 2
Operating Junction and Storage Temperature
T ,
STG
−55 to
175
°C
J
T
1
2
3
Gate
Drain Source
Single Pulse Drain−to−Source Avalanche
E
AS
338
mJ
Energy (V = 25 V, V = 5.0 V, I = 15 A,
x
A
Y
WW
G
= P or blank
= Assembly Location
= Year
= Work Week
= Pb−Free Package
DD
GS
PK
L = 3.0 mH, R = 25 W)
G
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
T
L
260
°C
THERMAL RESISTANCE RATINGS
Parameter
ORDERING INFORMATION
Symbol
Max
Unit
†
Device
Package
Shipping
Junction−to−Case (Drain) – Steady State
R
1.7
°C/W
q
JC
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NTB5605PT4G
D PAK
800 / Tape & Reel
(Pb−Free)
2
NTBV5605T4G
D PAK
800 / Tape & Reel
2
1. When surface mounted to an FR4 board using 1″ pad size (Cu Area 1.127 in ).
(Pb−Free)
2. When surface mounted to an FR4 board using the minimum recommended
2
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
pad size (Cu Area 0.41 in ).
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
August, 2011 − Rev. 4
NTB5605P/D
NTB5605P, NTBV5605
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = −250 mA
−60
V
(Br)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
−64
mV/°C
(Br)DSS
Zero Gate Voltage Drain Current
I
V
= 0 V
T = 25°C
−1.0
−10
mA
DSS
GS
J
V
DS
= −60 V
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
GS(th)
V
GS
= V , I = −250 mA
−1.0
−1.5
−2.0
V
DS
D
Drain−to−Source On Resistance
R
V
= −5.0 V, I = −8.5 A
120
140
140
mW
DS(on)
GS
D
V
= −5.0 V, I = −17 A
GS
DS
GS
D
Forward Transconductance
g
FS
V
= −10 V, I = −8.5 A
12
S
V
D
Drain−to−Source On Voltage
V
DS(on)
V
= −5.0 V, I = −8.5 A
−1.3
D
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
C
730
211
67
1190
300
120
22
iss
V
GS
= 0 V, f = 1.0 MHz,
DS
Output Capacitance
pF
nC
oss
V
= −25 V
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
13
G(TOT)
V
= −5.0 V, V = −48 V,
DS
GS
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Q
4.0
7.0
GS
I
= −17 A
D
Q
GD
t
12.5
122
29
25
183
58
d(on)
Rise Time
t
r
V
GS
= −5.0 V, V = −30 V,
DD
ns
V
I
D
= −17 A, R = 9.1 W
G
Turn−Off Delay Time
t
d(off)
Fall Time
t
75
150
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
J
−1.55
−1.4
60
−2.5
V
I
= 0 V
GS
= −17 A
T = 125°C
J
S
Reverse Recovery Time
Charge Time
t
rr
t
39
ns
a
V
GS
= 0 V, dI /dt = 100 A/ms,
S
I
S
= −17 A
Discharge Time
t
21
b
Reverse Recovery Charge
Q
0.14
nC
RR
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTB5605P, NTBV5605
40
35
30
25
20
15
10
40
V
= −10 V
= −9 V
= −8 V
= −7 V
GS
V
= −10 V
DS
T = −55°C
J
V
= −6 V
GS
V
V
V
GS
GS
V
V
= −5.5 V
GS
T = 25°C
30
20
10
0
J
GS
T = 125°C
J
T = 25°C
J
V
GS
= −5 V
= −4.5 V
GS
V
GS
= −4 V
V
= −3.5 V
GS
5
0
V
GS
= −3 V
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
−V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.5
0.45
0.4
0.25
T = 25°C
J
V
GS
= −5.0 V
0.225
0.2
0.35
0.3
0.175
0.15
0.125
0.1
V
= −5.0 V
= −10 V
GS
T = 125°C
J
0.25
0.2
T = 25°C
J
V
GS
0.15
0.1
0.075
0.05
T = −55°C
0.025
0
0.05
0
J
0
5
10
15
20
25
30
0
3
6
9
12
15
18
21
24
−I , DRAIN CURRENT (AMPS)
D
−I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance vs. Drain Current and
Figure 4. On−Resistance vs. Drain Current and
Temperature
Gate Voltage
10000
1000
100
2
V
GS
= 0 V
I
V
= −8.5 A
D
1.8
1.6
1.4
1.2
1
= −5.0 V
GS
T = 150°C
J
T = 125°C
J
0.8
0.6
0.4
0.2
0
10
1
−50 −25
0
25
50
75
100 125
150
5
10 15 20 25 30 35 40 45 50 55 60
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°C)
J
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTB5605P, NTBV5605
8
60
45
30
15
0
2400
2200
2000
1800
1600
1400
1200
1000
800
V
= 0 V
V
= 0 V
T = 25°C
DS
GS
J
7
C
V
DS
iss
6
5
4
3
2
1
0
Q
T
C
V
rss
GS
C
C
Q
Q
iss
DS
GS
600
400
200
0
I
= −17 A
oss
D
C
rss
T = 25°C
J
−V
GS
−V
DS
10
5
0
5
10
15
20
25
0
4
8
12
16
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
20
15
10
5
V
= 0 V
GS
T = 25°C
J
t
t
r
100
10
1
f
t
d(off)
t
d(on)
V
= −30 V
= −17 A
= −5.0 V
DD
I
D
V
GS
0
1
10
R , GATE RESISTANCE (W)
100
0
0.25
0.5
0.75
1
1.25
1.5
1.75
−V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
400
350
300
250
200
150
100
50
V
= −20 V
I
D
= −15 A
GS
SINGLE PULSE
= 25°C
T
C
100
10
dc
10 ms
1 ms
100 ms
1
R
Limit
DS(on)
10 ms
Thermal Limit
Package Limit
0.1
0.1
0
1
10
100
25
50
75
100
125
150
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTB5605P, NTBV5605
1
D = 0.5
0.2
0.1
0.05
0.01
SINGLE PULSE
0.1
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 13. Thermal Response
di/dt
I
S
t
rr
t
a
t
b
TIME
0.25 I
t
p
S
I
S
Figure 14. Diode Reverse Recovery Waveform
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5
NTB5605P, NTBV5605
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
C
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
4.83
0.89
1.40
8.89
A
S
1
2
3
2.54 BSC
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
−T−
SEATING
PLANE
K
W
J
K
L
G
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
M
N
P
R
S
V
H
D 3 PL
M
M
T B
0.13 (0.005)
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
VARIABLE
CONFIGURATION
ZONE
N
P
L
R
U
L
L
M
M
M
F
F
F
VIEW W−W
VIEW W−W
VIEW W−W
1
2
3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
3.25X04
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
NTB5605P, NTBV5605
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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For additional information, please contact your local
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NTB5605P/D
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