NTD2955D [ONSEMI]
Power MOSFET; 功率MOSFET
| 型号： | NTD2955D |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET |
| 文件： | 总8页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD2955
Power MOSFET
−60 V, −12 A, P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low−voltage, high−
speed switching applications in power supplies, converters, and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer an additional safety margin against unexpected
voltage transients.
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V
R
TYP
I MAX
D
(BR)DSS
DS(on)
−60 V
155 mW @ −10 V, 6 A
−12 A
Features
• Avalanche Energy Specified
P−Channel
• I
and V
Specified at Elevated Temperature
DSS
DS(on)
D
• Designed for Low−Voltage, High−Speed Switching Applications and
to Withstand High Energy in the Avalanche and Commutation Modes
• Pb−Free Packages are Available
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
S
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
V
DSS
−60
Vdc
MARKING
DIAGRAMS
Gate−to−Source Voltage
− Continuous
V
± 20
± 25
Vdc
Vpk
GS
V
GSM
− Non−repetitive (t ≤ 10 ms)
p
4
Drain Current
Drain Current − Continuous @ T = 25°C
Drain Current − Single Pulse (t ≤ 10 ms)
Drain
I
−12
−36
Adc
Apk
D
a
4
I
DM
p
DPAK
CASE 369C
STYLE 2
Total Power Dissipation @ T = 25°C
P
55
W
a
D
2
3
1
Operating and Storage Temperature
Range
T , T
J
−55 to
175
°C
stg
2
1
Gate
3
Single Pulse Drain−to−Source Avalanche
E
AS
216
mJ
Drain
Source
Energy − Starting T = 25°C
J
(V = 25 Vdc, V = 10 Vdc, Peak
DD
GS
4
I = 12 Apk, L = 3.0 mH, R = 25 W)
L
G
Drain
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
4
R
R
R
2.73
71.4
100
°C/W
°C
DPAK−3
CASE 369D
STYLE 2
q
JC
JA
JA
q
q
Maximum Lead Temperature for Soldering
Purposes, 1/8 in. from case for
10 seconds
T
260
L
1
2
3
1
2
3
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
Gate Drain Source
NT2955
A
Y
W
Device Code
= Assembly Location
= Year
1. When surface mounted to an FR4 board using 1 in pad size
2
(Cu area = 1.127 in ).
= Work Week
2. When surface mounted to an FR4 board using the minimum recommended
2
pad size (Cu area = 0.412 in ).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
October, 2004 − Rev. 7
NTD2955/D
NTD2955
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage (Note 3)
V
Vdc
mV/°C
mAdc
(BR)DSS
−60
−
−
67
−
−
(V = 0 Vdc, I = −0.25 mA)
GS
D
(Positive Temperature Coefficient)
Zero Gate Voltage Drain Current
I
DSS
−
−
−
−
−10
−100
(V = 0 Vdc, V = −60 Vdc, T = 25°C)
GS
DS
J
(V = 0 Vdc, V = −60 Vdc, T = 150°C)
GS
DS
J
Gate−Body Leakage Current (V = ± 20 Vdc, V = 0 Vdc)
I
−
−
−100
nAdc
GS
DS
GSS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
Vdc
mV/°C
W
GS(th)
−2.0
−
−2.8
4.5
−4.0
−
(V = V , I = −250 mAdc)
DS
GS
D
(Negative Temperature Coefficient)
Static Drain−Source On−State Resistance
R
V
DS(on)
−
0.155
0.180
(V = −10 Vdc, I = −6.0 Adc)
GS
D
Drain−to−Source On−Voltage
(V = −10 Vdc, I = −12 Adc)
Vdc
DS(on)
−1.86
−
−2.6
−2.0
GS
D
(V = −10 Vdc, I = −6.0 Adc, T = 150°C)
GS
D
J
Forward Transconductance (V = 10 Vdc, I = 6.0 Adc)
8.0
−
Mhos
pF
DS
D
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
500
150
50
750
250
100
iss
(V = −25 Vdc, V = 0 Vdc,
DS
GS
Output Capacitance
C
oss
F = 1.0 MHz)
Reverse Transfer Capacitance
C
rss
SWITCHING CHARACTERISTICS (Notes 3 and 4)
Turn−On Delay Time
t
−
−
−
−
−
−
−
10
45
26
48
15
4.0
7.0
20
85
40
90
30
−
ns
d(on)
Rise Time
t
r
(V = −30 Vdc, I = −12 A,
DD
D
G
V
GS
= −10 V, R = 9.1 W)
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
Gate Charge
Q
nC
T
(V = −48 Vdc, V = −10 Vdc,
DS
GS
= −12 A)
Q
GS
GD
I
D
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3)
Diode Forward On−Voltage
V
Vdc
ns
SD
−
−
−1.6
−1.3
−2.5
−
(I = 12 Adc, V = 0 V)
S
GS
(I = 12 Adc, V = 0 V, T = 150°C)
S
GS
J
Reverse Recovery Time
(I = 12 A, dI /dt = 100 A/ms ,V = 0 V)
t
−
−
−
−
50
40
rr
S
S
GS
t
−
−
−
a
t
10
b
Reverse Recovery Stored Charge
Q
0.10
mC
RR
3. Indicates Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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2
NTD2955
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
25
20
15
10
5
24
V
= −10 V
T = 25°C
J
T = −ꢀ55°C
GS
−9 V
J
V
DS
≥ −10 V
22
20
18
16
14
12
10
8
−8 V
−9.5 V
25°C
125°C
−7 V
−6.5 V
−6 V
−5.5 V
−5 V
6
4
2
0
0
0
1
2
3
4
5
6
7
8
9
10
2
3
4
5
6
7
8
9
10
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
−V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.250
0.225
0.200
0.175
0.150
T = 25°C
V
GS
= −10 V
J
T = 125°C
J
V
= −10 V
GS
−15 V
25°C
0.125
0.100
0.075
0.050
−ꢀ55°C
0
3
6
9
12
15
18
21
24
0
3
6
9
12
15
18
21
24
−I , DRAIN CURRENT (AMPS)
D
−I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance versus Drain Current
and Temperature
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1000
100
10
V
GS
= 0 V
V
= −10 V
= −6 A
GS
I
D
T = 125°C
J
100°C
1
−ꢀ50 −ꢀ25
0
25
50
75
100 125
150 175
5
10 15 20 25 30 35 40 45 50 55
60
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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3
NTD2955
1200
1000
800
15
60
50
40
30
20
V
DS
= 0 V
V
GS
= 0 V
I
= 12 A
T = 25°C
D
J
T = 25°C
J
V
C
DS
iss
12.5
C
rss
Q
10
7.5
5
T
V
GS
600
Q
Q
GD
C
iss
GS
400
C
oss
200
0
10
0
2.5
0
C
rss
0
2
4
6
8
10
12
14
16
10
5
0
5
10
15
20
25
Q , TOTAL GATE CHARGE (nC)
T
−V
−V
DS
GS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
Figure 7. Capacitance Variation
1000
100
15
V
= −30 V
= −12 A
= −10 V
DD
V
= 0 V
GS
I
D
T = 25°C
J
V
GS
T = 25°C
J
10
5
t
f
t
r
t
d(off)
t
10
1
d(on)
0
1
10
R , GATE RESISTANCE (W)
100
0
0.25
0.5
0.75
1
1.25
1.5
1.75
G
−V , SOURCE−TO−DRAIN VOLTAGE (V)
SD
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
100
10
1
V
= −15 V
GS
SINGLE PULSE
= 25°C
T
C
di/dt
100 ms
1 ms
I
S
t
rr
10 ms
dc
t
a
t
b
R
LIMIT
TIME
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
0.25 I
t
p
S
0.1
0.1
1
10
100
I
S
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 12. Diode Reverse Recovery Waveform
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTD2955
1.0
D = 0.5
0.2
0.1
P
(pk)
0.05
0.1
R
q
(t) = r(t) R
q
JC
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.02
0.01
SINGLE PULSE
t
READ TIME AT t
1
1
t
2
T
− T = P
C
R (t)
q
JC
J(pk)
(pk)
DUTY CYCLE, D = t /t
1 2
0.01
1.0E−05
1.0E−04
1.0E−03
1.0E−02
t, TIME (s)
1.0E−01
1.0E+00
1.0E+01
Figure 13. Thermal Response
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5
NTD2955
ORDERING INFORMATION
†
Device
NTD2955
Package
Shipping
DPAK
75 Units / Rail
75 Units / Rail
NTD2955G
DPAK
(Pb−Free)
NTD2955−001
NTD2955−1G
DPAK−3
75 Units / Rail
75 Units / Rail
DPAK−3
(Pb−Free)
NTD2955T4
DPAK
2500 / Tape & Reel
2500 / Tape & Reel
NTD2955T4G
DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NTD2955
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
SEATING
PLANE
−T−
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
STYLE 2:
PIN 1. GATE
2. DRAIN
G
0.13 (0.005)
T
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
NTD2955
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
NOTES:
C
B
R
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V
S
E
INCHES
DIM MIN MAX
MILLIMETERS
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
4
2
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
STYLE 2:
PIN 1. GATE
G
M
T
0.13 (0.005)
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NTD2955/D
相关型号：
NTD2955G
12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369C-01, DPAK-3
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