NTD30N02G [ONSEMI]
N Channel DPAK MOSFET 30 Amps, 24 Volts;
| 型号： | NTD30N02G |
| 厂家： | 
ONSEMI |
| 描述： | N Channel DPAK MOSFET 30 Amps, 24 Volts 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD30N02
Power MOSFET
30 Amps, 24 Volts
N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
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30 AMPERES
24 VOLTS
Features
RDS(on) = 11.2 mW (Typ.)
• Pb−Free Packages are Available
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
N−Channel
D
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
S
Rating
Drain−to−Source Voltage
Symbol Value Unit
MARKING
DIAGRAM
V
24
Vdc
Vdc
Adc
DSS
Gate−to−Source Voltage − Continuous
V
"20
GS
4
Drain Current
4
Drain
− Continuous @ T = 25°C
I
D
30
100
A
− Single Pulse (t v10 ms)
I
Apk
W
p
DM
2
1
Total Power Dissipation @ T = 25°C
Operating and Storage Temperature Range
P
75
A
D
3
T , T
−55 to
150
°C
J
stg
DPAK
CASE 369C
STYLE 2
Single Pulse Drain−to−Source Avalanche
E
AS
50
mJ
2
Energy − Starting T = 25°C
J
1
3
Drain
(V = 24 Vdc, V = 10 Vdc,
DD
GS
Gate
Source
L = 1.0 mH, I (pk) = 10 A, R = 25 W)
L
G
D30N02 = Device Code
Thermal Resistance
°C/W
Y
= Year
− Junction−to−Case
R
R
R
1.65
67
120
q
JC
JA
JA
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
WW
G
= Work Week
= Pb−Free Device
q
q
Maximum Lead Temperature for Soldering
T
L
260
°C
ORDERING INFORMATION
Purposes, 1/8″ from case for 10 seconds
†
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
Device
Package
Shipping
NTD30N02
DPAK
75 Units/Rail
NTD30N02G
DPAK
(Pb−Free)
75 Units/Rail
1. When surface mounted to an FR4 board using 1 in. pad size,
(Cu Area 1.127 sq in).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 sq in).
NTD30N02T4
DPAK
2500 Tape & Reel
2500 Tape & Reel
NTD30N02T4G
DPAK
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
February, 2006 − Rev. 3
NTD30N02/D
NTD30N02
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
V
Vdc
mV/°C
mAdc
(BR)DSS
(V = 0 Vdc, I = 250 mAdc)
24
26.5
25.5
−
−
GS
D
−
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
I
DSS
(V = 20 Vdc, V = 0 Vdc)
−
−
−
−
−
−
0.8
1.0
10
DS
GS
(V = 24 Vdc, V = 0 Vdc)
DS
GS
(V = 20 Vdc, V = 0 Vdc, T = 125°C)
DS
GS
J
Gate−Body Leakage Current (V
=
20 Vdc, V = 0 Vdc)
I
−
−
100
nAdc
GS
DS
GSS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
V
Vdc
mV/°C
mW
GS(th)
(V = V , I = 250 mAdc)
1.0
2.1
3.0
DS
GS
D
−
−4.1
−
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
R
DS(on)
(V = 10 Vdc, I = 30 Adc)
−
−
−
−
11.2
20
14.5
14.5
24
GS
D
(V = 10 Vdc, I = 20 Adc)
GS
D
(V = 4.5 Vdc, I = 15 Adc)
GS
D
Forward Transconductance (Note 3) (V = 10 Vdc, I = 15 Adc)
g
FS
−
20
−
mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
1000
425
−
−
−
iss
(V = 20 Vdc, V = 0 Vdc,
DS
GS
Output Capacitance
C
oss
f = 1.0 MHz)
Transfer Capacitance
C
175
rss
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
−
−
−
−
−
−
−
−
−
−
−
7.0
28
15
55
35
20
−
ns
ns
d(on)
Rise Time
t
r
(V = 20 Vdc, I = 30 Adc,
DD
GS
D
G
V
= 10 Vdc, R = 2.5 W)
Turn−Off Delay Time
Fall Time
t
t
t
22
d(off)
t
f
12
Turn−On Delay Time
Rise Time
12.5
115
15
d(on)
t
r
−
(V = 20 Vdc, I = 15 Adc,
DD
GS
D
V
= 4.5 Vdc, R = 2.5 W)
G
Turn−Off Delay Time
Fall Time
−
d(off)
t
f
17
−
Gate Charge
Q
T
Q
1
Q
2
14.4
4.0
8.5
20
−
nC
(V = 20 Vdc, I = 30 Adc,
DS
D
V
= 4.5 Vdc) (Note 3)
GS
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I = 15 Adc, V = 0 Vdc)
V
SD
−
−
−
0.95
1.10
0.80
1.2
−
Vdc
ns
S
GS
(I = 30 Adc, V = 0 Vdc) (Note 3)
S
S
GS
(I = 15 Adc, V = 0 Vdc, T = 125°C)
−
GS
J
Reverse Recovery Time
t
rr
−
−
−
−
30
−
−
−
−
(I = 30 Adc, V = 0 Vdc,
S
GS
t
a
14.5
15.5
0.013
dI /dt = 100 A/ms) (Note 3)
S
t
b
Reverse Recovery Stored Charge
Q
mC
RR
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD30N02
60
50
40
30
20
10
0
60
V
= 9 V
GS
V
≥ 10 V
DS
5 V
50
40
30
8 V
7 V
T = 25°C
J
4.6 V
6 V
4.2 V
4 V
5.4 V
20
10
0
T = 25°C
J
3.4 V
3.6 V
T = 100°C
J
T = −55°C
3 V
7
J
0
1
2
3
4
5
6
8
1
2
3
4
5
6
7
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.04
0.03
0.02
0.01
0.07
T = 25°C
J
I
= 15 A
D
0.06
0.05
0.04
0.03
0.02
0.01
T = 25°C
J
V
GS
= 4.5 V
V
GS
= 10 V
50
0
2
3
4
5
6
7
8
9
10
10
20
30
40
60
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
1.4
100
10
1
V
GS
= 0 V
I
V
= 15 A
D
= 10 V
GS
T = 150°C
J
1.2
1
0.1
T = 100°C
J
0.8
0.01
0.6
−50 −25
0
25
50
75
100
125 150
4
8
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
12
16
20
24
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
versus Voltage
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3
NTD30N02
2500
2000
C
V
DS
= 0 V
V
GS
= 0 V
iss
T = 25°C
J
C
rss
1500
1000
C
iss
C
oss
500
0
C
rss
10
5
0
5
10
15
20
25
V
GS
V
DS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
5
4
3
2
20
16
12
8
V
DS
V
DS
= 20 V
Q
T
I
D
= 30 A
V
GS
= 10 V
Q
Q
1
V
GS
2
100
t
d(off)
t
f
t
r
10
1
I
V
V
= 30 A
D
= 20 V
DS
t
d(on)
4
0
1
0
= 4.5 V
GS
T = 25°C
J
0
4
8
12
16
1
10
100
Q , TOTAL GATE CHARGE (nC)
G
R , GATE RESISTANCE (W)
G
Figure 8. Gate−to−Source and Drain−to−Source
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Voltage versus Total Charge
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
15
V
GS
= 0 V
T = 25°C
J
12
9
6
3
0
0.3 0.4 0.5 0.6
0.7 0.8 0.9
1
1.1 1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
4
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE G
2
1
DATE 31 MAY 2023
3
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
IC
Discrete
XXXXXX = Device Code
A
= Assembly Location
L
= Wafer Lot
STYLE 1:
STYLE 2:
PIN 1. GATE
2. DRAIN
STYLE 3:
STYLE 4:
STYLE 5:
Y
WW
G
= Year
= Work Week
= Pb−Free Package
PIN 1. BASE
PIN 1. ANODE
2. CATHODE
3. ANODE
PIN 1. CATHODE
2. ANODE
3. GATE
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
2. COLLECTOR
3. EMITTER
3. SOURCE
4. DRAIN
4. COLLECTOR
4. CATHODE
4. ANODE
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 6:
PIN 1. MT1
2. MT2
STYLE 7:
PIN 1. GATE
STYLE 8:
PIN 1. N/C
STYLE 9:
PIN 1. ANODE
2. CATHODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
2. COLLECTOR
2. CATHODE
3. GATE
4. MT2
3. EMITTER
4. COLLECTOR
3. ANODE
4. CATHODE
3. RESISTOR ADJUST
4. CATHODE
3. CATHODE
4. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
PAGE 1 OF 1
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相关型号：
NTD30N02T4G
30A, 24V, 0.0145ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3
ROCHESTER
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