NTD4854N-35G [ONSEMI]
Power MOSFET 25 V, 128 A, Single N-Channel, DPAK/IPAK; 功率MOSFET的25 V ， 128 A单N沟道， DPAK / IPAK
| 型号： | NTD4854N-35G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 25 V, 128 A, Single N-Channel, DPAK/IPAK |
| 文件： | 总8页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD4854N
Power MOSFET
25 V, 128 A, Single N-Channel, DPAK/IPAK
Features
•ꢀTrench Technology
•ꢀLow R
to Minimize Conduction Losses
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DS(on)
•ꢀLow Capacitance to Minimize Driver Losses
•ꢀOptimized Gate Charge to Minimize Switching Losses
•ꢀThese are Pb-Free Devices
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
3.6 mW @ 10 V
4.7 mW @ 4.5 V
25 V
128 A
Applications
•ꢀVCORE Applications
•ꢀDC-DC Converters
•ꢀHigh/Low Side Switching
D
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
G
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
V
25
20
V
V
A
DSS
S
V
N-CHANNEL MOSFET
GS
Continuous Drain
Current R
I
D
T = 25°C
20.8
A
4
q
JA
4
T = 85°C
A
16.1
2.5
(Note 1)
Power Dissipation
(Note 1)
4
T = 25°C
A
P
W
A
D
D
D
R
q
JA
2
1
Continuous Drain
Current R
I
D
T = 25°C
A
15.7
12.2
1.43
1
1
2
3
3
q
JA
2
T = 85°C
A
Steady
State
3
(Note 2)
Power Dissipation
(Note 2)
CASE 369AC
3 IPAK
(Straight Lead)
CASE 369AA
DPAK
CASE 369D
IPAK
T = 25°C
A
P
I
W
A
R
q
JA
(Bent Lead)
STYLE 2
(Straight Lead
DPAK)
Continuous Drain
Current R
(Note 1)
T
C
T
C
T
C
= 25°C
= 85°C
= 25°C
128
99
D
q
JC
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Power Dissipation
(Note 1)
P
93.75
W
A
R
q
JC
4
Drain
Pulsed Drain
Current
t =10ms
p
T = 25°C
A
I
DM
255
45
4
Drain
4
Drain
Current Limited by Package
T = 25°C
A
I
A
DmaxPkg
Operating Junction and Storage
Temperature
T ,
J
-55 to
+175
°C
T
STG
Source Current (Body Diode)
Drain to Source dV/dt
I
78
6
A
S
dV/dt
EAS
V/ns
mJ
2
Drain
Single Pulse Drain-to-Source Avalanche
Energy (T = 25°C, V = 50 V, V = 10 V,
338
1
2
3
Gate Drain Source
1
3
Gate Source
J
DD
I = 26 A , L = 1.0 mH, R = 25 W)
GS
1
2
3
Gate Drain Source
L
pk
G
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
260
°C
L
Y
WW
= Year
= Work Week
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
4854N = Device Code
= Pb-Free Package
G
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©ꢀ Semiconductor Components Industries, LLC, 2008
April, 2008 - Rev. 1
1
Publication Order Number:
NTD4854N/D
NTD4854N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.6
Unit
Junction-to-Case (Drain)
R
°C/W
q
JC
Junction-to-TAB (Drain)
R
3.5
q
JC-TAB
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – Steady State (Note 2)
R
R
60
q
q
JA
JA
105
1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
D
25
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
/
23
(BR)DSS
T
mV/°C
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
= 20 V
T = 25°C
1.0
10
DSS
GS
DS
J
mA
T = 125°C
J
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
DS D
1.45
2.5
V
GS(TH)
GS
Negative Threshold Temperature
Coefficient
V
/T
6.0
GS(TH)
J
mV/°C
Drain-to-Source On Resistance
R
V
= 10 V
I
I
= 30 A
= 30 A
2.9
3.6
3.6
4.7
DS(on)
GS
D
mW
V
GS
= 4.5 V
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
V
= 1.5 V, I = 15 A
D
122
S
FS
DS
C
4600
1100
578
32.8
3.7
ISS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
V
= 0 V, f = 1.0 MHz, V = 12 V
DS
pF
GS
Q
49.2
G(TOT)
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
Q
G(TH)
V
= 4.5 V, V = 15 V, I = 30 A
DS D
nC
nC
GS
Q
11.8
12.6
65
GS
GD
Q
Q
t
V
= 10 V, V = 15 V, I = 30 A
DS D
G(TOT)
GS
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
Rise Time
22.6
40.7
25
d(ON)
t
r
V
= 4.5 V, V = 15 V,
DS
= 15 A, R = 3.0 W
G
GS
I
ns
ns
D
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
17.6
12.1
17.6
41
f
Turn-On Delay Time
Rise Time
t
d(ON)
t
r
V
= 11.5 V, V = 15 V,
DS
= 15 A, R = 3.0 W
G
GS
I
D
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
8.5
f
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD4854N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.84
0.71
31.3
16
1.2
SD
J
V
= 0 V,
= 30 A
GS
V
I
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
ns
nC
nH
a
V
= 0 V, dIS/dt = 100 A/ms,
= 30 A
GS
I
S
Discharge Time
t
15.3
20.2
b
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Q
RR
L
L
L
2.49
0.0164
1.88
S
D
D
G
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
T = 25°C
A
L
3.46
Gate Resistance
R
0.6
W
G
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
NTD4854N
TYPICAL PERFORMANCE CURVES
160
140
120
100
80
200
T = 25°C
J
10 V
3.8 V
V
DS
≥ 10 V
180
160
140
120
100
80
3.6 V
3.4 V
3.2 V
60
T = 125°C
60
J
3.0 V
2.8 V
40
40
T = 25°C
J
20
20
T = -55°C
J
0
0
0
1
2
3
4
5
1
2
3
4
5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.005
0.0045
0.004
T = 25°C
I
= 30 A
J
D
T = 25°C
J
V
= 4.5 V
GS
0.0035
0.003
V
GS
= 11.5 V
0.0025
0.002
2
3
4
5
6
7
8
9
10
11
30
50
70
90
110
130
150 170 190
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPS)
D
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100000
10000
1000
V
GS
= 0 V
I
= 30 A
D
T = 150°C
J
V
= 10 V
GS
T = 125°C
J
100
10
1
T = 25°C
J
-50 -25
0
25
50
75 100 125 150 175
5
10
15
20
25
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
vs. Drain Voltage
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4
NTD4854N
TYPICAL PERFORMANCE CURVES
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
12
Q
T
V
= 0 V
GS
C
T = 25°C
iss
J
10
8
V
GS
6
Q
C
Q
1
oss
2
4
I
= 30 A
D
2
V
= 15 V
DD
C
rss
T = 25°C
J
0
0
0
0
2.5
5
7.5
10
12.5
15
17.5
20
10
20
30
40
50
60
70
80
DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate-To-Source and Drain-To-Source
Voltage vs. Total Charge
1000
30
25
20
15
10
5
V
= 10 V
DD
= 15 A
V
GS
= 0 V
I
D
T = 25°C
J
V
GS
= 10 V
t
d(off)
100
10
1
t
r
t
f
t
d(on)
0
0.5
1
10
100
0.6
0.7
0.8
0.9
R , GATE RESISTANCE (OHMS)
G
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
360
320
280
240
I
D
= 26 A
10 ms
100 ms
200
160
120
80
1 ms
10 ms
dc
V
= 20 V
GS
SINGLE PULSE
= 25°C
T
C
1
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
40
0.1
0.1
0
25
1
10
100
50
75
100
125
150
175
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
NTD4854N
TYPICAL PERFORMANCE CURVES
1.0
D = 0.5
0.2
0.1
0.05
0.02
P
(pk)
0.1
R
(t) = r(t) R
q
JC
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.01
SINGLE PULSE
t
1
1
t
2
T
J(pk)
- T = P
C
R (t)
q
JC
(pk)
DUTY CYCLE, D = t /t
1
2
0.01
1.0E-05
1.0E-04
1.0E-03
1.0E-02
t, TIME (ms)
1.0E-01
1.0E+00
1.0E+01
Figure 13. Thermal Response
ORDERING INFORMATION
Device
†
Package
Shipping
NTD4854NT4G
DPAK
(Pb-Free)
2500 / Tape & Reel
75 Units / Rail
NTD4854N-1G
NTD4854N-35G
IPAK
(Pb-Free)
IPAK Trimmed Lead
(3.5 " 0.15 mm)
(Pb-Free)
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NTD4854N
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369AA-01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
-T-
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.63
0.46
0.77
MAX
6.22
6.73
2.38
0.89
0.61
1.14
A
B
C
D
E
F
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
4
2
Z
A
H
S
1
3
H
J
L
9.80 10.40
0.58
2.29 BSC
U
0.46
R
S
U
V
Z
0.180 0.215
0.024 0.040
4.57
0.60
0.51
0.89
3.93
5.45
1.01
---
1.27
---
F
J
0.020
0.035 0.050
0.155 ---
---
L
STYLE 2:
PIN 1. GATE
2. DRAIN
D 2 PL
M
0.13 (0.005)
T
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
NTD4854N
PACKAGE DIMENSIONS
3 IPAK, STRAIGHT LEAD
CASE 369AC-01
ISSUE O
NOTES:
1.. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2.. CONTROLLING DIMENSION: INCH.
3. SEATING PLANE IS ON TOP OF
DAMBAR POSITION.
4. DIMENSION A DOES NOT INCLUDE
DAMBAR POSITION OR MOLD GATE.
B
R
C
V
E
INCHES
DIM MIN MAX
MILLIMETERS
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.09
A
B
C
D
E
F
G
H
J
K
R
V
W
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.043
0.090 BSC
0.034 0.040
0.018 0.023
0.134 0.142
0.180 0.215
0.035 0.050
A
K
SEATING PLANE
W
2.29 BSC
F
0.87
0.46
3.40
4.57
0.89
1.01
0.58
3.60
5.46
1.27
0.25
J
G
H
D 3 PL
0.000 0.010 0.000
0.13 (0.005) W
IPAK (STRAIGHT LEAD DPAK)
CASE 369D-01
ISSUE B
C
B
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V
E
INCHES
DIM MIN MAX
MILLIMETERS
4
2
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
A
K
S
1
3
-T-
SEATING
PLANE
2.29 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
---
J
F
H
0.155
---
D 3 PL
STYLE 2:
PIN 1. GATE
2. DRAIN
G
M
T
0.13 (0.005)
3. SOURCE
4. DRAIN
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NTD4854N/D
相关型号：
NTD4855N-1G
14A, 25V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369AC-01, IPAK-3
ROCHESTER
NTD4855NT4H
14A, 25V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND LEAD FREE, CASE 369AA-01, DPAK-3
ONSEMI
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