NTD5865N [ONSEMI]
N-Channel Power MOSFET 60 V, 38 A, 18 m; N沟道功率MOSFET的60 V， 38 A， 18米？
| 型号： | NTD5865N |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET 60 V, 38 A, 18 m |
| 文件： | 总7页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD5865N
N-Channel Power MOSFET
60 V, 38 A, 18 mW
Features
• Low Gate Charge
• Fast Switching
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• High Current Capability
• 100% Avalanche Tested
V
R
MAX
I MAX
D
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
(BR)DSS
DS(on)
60 V
18 mW @ 10 V
38 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
D
V
DSS
Gate−to−Source Voltage − Continuous
V
"20
"30
V
GS
GS
Gate−to−Source Voltage
V
V
− Non−Repetitive (t < 10 ms)
p
G
Continuous Drain
T
= 25°C
= 100°C
= 25°C
I
38
24
52
A
C
D
Current (R
)
q
JC
Steady
State
T
C
S
N−CHANNEL MOSFET
Power Dissipation
(R
T
C
P
W
D
)
q
JC
4
Pulsed Drain Current
t = 10 ms
I
137
A
p
DM
4
Operating Junction and Storage Temperature
T , T
J
−55 to
150
°C
stg
2
1
Source Current (Body Diode)
I
38
36
A
mJ
A
S
1
2
3
Single Pulse Drain−to−Source
Avalanche Energy
L = 0.1 mH
E
3
AS
AS
DPAK
IPAK
CASE 369C
(Surface Mount)
STYLE 2
I
27
CASE 369D
(Straight Lead)
STYLE 2
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
THERMAL RESISTANCE MAXIMUM RATINGS
Drain
Parameter
Symbol
Value
Unit
Junction−to−Case (Drain)
R
2.4
42
°C/W
q
JC
Junction−to−Ambient − Steady State (Note 1)
R
q
JA
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces.
2
Drain
1
3
Gate Source
1
2
3
Gate Drain Source
Y
WW
= Year
= Work Week
5865N = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
May, 2010 − Rev. 0
NTD5865N/D
NTD5865N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
59.2
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
1.0
100
100
mA
DSS
J
V
= 0 V,
GS
DS
V
= 60 V
T = 150°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
2.0
4.0
18
V
GS(TH)
DS
D
Negative Threshold Temperature
Coefficient
V
/T
J
8.6
mV/°C
GS(TH)
Drain−to−Source On Resistance
R
V
= 10 V, I = 20 A
14
mW
DS(on)
GS
D
Forward Transconductance
gFS
V
DS
= 15 V, I = 20 A
6.9
S
D
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
C
1261
136
85
pF
nC
iss
V
GS
= 0 V, f = 1.0 MHz,
DS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
oss
V
= 25 V
C
rss
Q
23
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
1.5
6.7
7.7
1.5
G(TH)
V
GS
= 10 V, V = 48 V,
DS
I
= 38 A
D
Q
GS
Q
GD
R
W
G
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
t
10
17
20
3.5
ns
d(on)
t
r
V
= 10 V, V = 48 V,
DD
GS
D
I
= 38 A, R = 2.5 W
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.94
0.85
23
1.2
V
SD
J
V
S
= 0 V,
GS
I
= 38 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
ta
17
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 38 A
Discharge Time
tb
6
Reverse Recovery Charge
Q
20
nC
RR
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
†
Order Number
NTD5865N−1G
Package
Shipping
DPAK (Straight Lead)
75 Units / Rail
2500 / Tape & Reel
(Pb−Free)
NTD5865NT4G
DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NTD5865N
80
70
60
50
40
30
20
10
0
80
T = 25°C
V
DS
≥ 10 V
V
GS
= 10 V
J
70
60
50
40
30
20
10
0
6 V
5.5 V
T = 25°C
J
5.0 V
4.5 V
T = 125°C
T = −55°C
J
J
0
1
2
3
4
5
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.018
0.016
0.014
0.012
0.010
V
= 10 V
I
= 38 A
GS
D
T = 25°C
J
T = 25°C
J
4
5
6
7
8
9
10
5
10
15
20
25
30
35
40
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
10000
1000
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
GS
= 0 V
I
= 38 A
= 10 V
D
V
GS
T = 150°C
J
T = 125°C
J
−50
−25
0
25
50
75
100
125
150
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTD5865N
10
1600
1400
1200
1000
800
600
400
200
0
Q
V
= 0 V
T
GS
C
T = 25°C
J
iss
8
6
4
2
0
Q
Q
gd
gs
V
I
= 48 V
= 38 A
DS
C
oss
D
T = 25°C
J
C
rss
0
10
20
30
40
50
60
0
5
10
15
20
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
40
35
30
25
20
15
10
5
1000
100
10
V
= 48 V
= 38 A
= 10 V
V
= 0 V
DD
GS
I
D
T = 25°C
J
V
GS
t
d(off)
t
t
r
d(on)
t
f
0
1
1
10
R , GATE RESISTANCE (W)
100
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
40
35
30
25
20
15
10
5
I
D
= 27 A
V
= 10 V
GS
SINGLE PULSE
= 25°C
T
C
10 ms
10 ms
1 ms
100 ms
dc
1
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
0.1
0
0.1
1
10
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTD5865N
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
0.01
SINGLE PULSE
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 13. Thermal Response
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5
NTD5865N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
SEATING
−T−
PLANE
2. CONTROLLING DIMENSION: INCH.
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.63
0.46
0.77
MAX
6.22
6.73
2.38
0.89
0.61
1.14
A
B
C
D
E
F
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
4
2
Z
A
H
S
1
3
H
J
L
9.80 10.40
U
0.46
0.58
2.29 BSC
R
S
U
V
Z
0.180 0.215
0.024 0.040
4.57
0.60
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
F
J
0.020
0.035 0.050
0.155 −−−
−−−
L
STYLE 2:
PIN 1. GATE
2. DRAIN
D 2 PL
M
0.13 (0.005)
T
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
1.6
0.063
6.172
0.243
0.228
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
NTD5865N
PACKAGE DIMENSIONS
IPAK−3 (SINGLE GAUGE)
CASE 369D−01
ISSUE B
C
B
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
V
S
E
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
MILLIMETERS
4
2
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
STYLE 2:
PIN 1. GATE
2. DRAIN
G
M
T
0.13 (0.005)
3. SOURCE
4. DRAIN
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NTD5865N/D
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