NTF6P02T3-D_10 [ONSEMI]
Power MOSFET -10 Amps, -20 Volts P−Channel SOT−223; 功率MOSFET -10安培，伏特-20 P沟道SOT- 223
| 型号： | NTF6P02T3-D_10 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET -10 Amps, -20 Volts P−Channel SOT−223 |
| 文件： | 总6页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTF6P02T3
Power MOSFET
-10 Amps, -20 Volts
P−Channel SOT−223
http://onsemi.com
Features
• Low R
DS(on)
−10 AMPERES
−20 VOLTS
RDS(on) = 44 mW (Typ.)
• Logic Level Gate Drive
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• Pb−Free Package is Available
S
Typical Applications
G
• Power Management in Portables and Battery−Powered Products,
i.e.: Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
D
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current (Note 1)
Symbol
Value
−20
Unit
Vdc
Vdc
P−Channel MOSFET
V
DSS
MARKING DIAGRAM
& PIN ASSIGNMENT
V
GS
8.0
Drain
4
− Continuous @ T = 25°C
I
−10
−8.4
−35
Adc
4
A
D
D
− Continuous @ T = 70°C
I
A
1
− Single Pulse (t = 10 ms)
I
Apk
W
p
DM
2
3
AYW
6P02G
G
Total Power Dissipation @ T = 25°C
P
D
8.3
A
SOT−223
CASE 318E
STYLE 3
Operating and Storage Temperature Range
T , T
−55 to
+150
°C
J
stg
Single Pulse Drain−to−Source Avalanche
E
150
mJ
°C/W
°C
1
2
3
AS
Energy − Starting T = 25°C
Gate Drain Source
J
(V = −20 Vdc, V = −5.0 Vdc,
DD
L(pk)
GS
I
= −10 A, L = 3.0 mH, R = 25W)
A
Y
W
6P02
G
= Assembly Location
G
= Year
Thermal Resistance
= Work Week
= Specific Device Code
= Pb−Free Package
− Junction to Lead (Note 1)
− Junction to Ambient (Note 2)
− Junction to Ambient (Note 3)
R
R
15
71.4
160
q
JL
JA
JA
q
q
R
(Note: Microdot may be in either location)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
260
L
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Steady State.
2. When surface mounted to an FR4 board using 1” pad size,
(Cu. Area 1.127 sq in), Steady State.
ORDERING INFORMATION
†
Device
Package
Shipping
NTF6P02T3
SOT−223 4000/Tape & Reel
4000/Tape & Reel
SOT−223
(Pb−Free)
NTF6P02T3G
3. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu. Area 0.412 sq in), Steady State.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
January, 2010 − Rev. 3
NTF6P02T3/D
NTF6P02T3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage (Note 4)
V
Vdc
mV/°C
mAdc
(BR)DSS
(V = 0 Vdc, I = −250 mAdc)
−20
−25
−11
−
−
GS
D
−
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
I
DSS
(V = −20 Vdc, V = 0 Vdc)
−
−
−
−
−1.0
−10
DS
GS
(V = −20 Vdc, V = 0 Vdc, T = 125°C)
DS
GS
J
Gate−Body Leakage Current
(V 8.0 Vdc, V = 0 Vdc)
I
−
−
100
nAdc
GSS
=
GS
DS
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (Note 4)
V
Vdc
mV/°C
mW
GS(th)
(V = V , I = −250 mAdc)
−0.4
−0.7
−1.0
DS
GS D
−
2.6
−
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 4)
R
DS(on)
(V = −4.5 Vdc, I = −6.0 Adc)
−
−
−
44
57
57
50
70
−
GS
D
(V = −2.5 Vdc, I = −4.0 Adc)
GS
D
(V = −2.5 Vdc, I = −3.0 Adc)
GS
D
g
−
12
−
Mhos
pF
Forward Transconductance (Note 4)
(V = −10 Vdc, I = −6.0 Adc)
fs
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
−
−
−
900
350
90
1200
500
150
−
(V = −16 Vdc, V = 0 V,
iss
DS
GS
f = 1.0 MHz)
Output Capacitance
C
oss
Transfer Capacitance
Input Capacitance
C
rss
C
940
410
110
(V = −10 Vdc, V = 0 V,
pF
iss
DS
GS
f = 1.0 MHz)
Output Capacitance
C
−
oss
Transfer Capacitance
C
−
rss
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
t
−
−
−
−
−
−
−
−
−
−
−
7.0
25
75
50
8.0
30
60
60
15
1.7
6.0
12
45
125
85
−
(V = −5.0 Vdc, I = −1.0 Adc,
ns
ns
d(on)
DD
D
V
= −4.5 Vdc,
GS
G
t
r
R
= 6.0 W)
Turn−Off Delay Time
Fall Time
t
t
t
d(off)
t
f
Turn−On Delay Time
Rise Time
(V = −16 Vdc, I = −6.0 Adc,
d(on)
DD
D
V
GS
R
= −4.5 Vdc,
G
t
r
−
= 2.5 W)
Turn−Off Delay Time
Fall Time
−
d(off)
t
f
−
Q
20
−
Gate Charge
(V = −16 Vdc, I = −6.0 Adc,
nC
T
DS
GS
D
V
= −4.5 Vdc) (Note 4)
Q
Q
gs
gd
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I = −3.0 Adc, V = 0 Vdc) (Note 4)
V
−
−
−
−0.82
−0.74
−0.68
−1.2
−
Vdc
ns
S
GS
SD
(I = −2.1 Adc, V = 0 Vdc)
S
GS
(I = −3.0 Adc, V = 0 Vdc, T = 125°C)
−
S
GS
J
t
−
−
−
−
42
17
−
−
−
−
Reverse Recovery Time
(I = −3.0 Adc, V = 0 Vdc,
S GS
rr
dI /dt = 100 A/ms) (Note 4)
S
t
a
t
25
b
Reverse Recovery Stored Charge
Q
0.036
mC
RR
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTF6P02T3
TYPICAL ELECTRICAL CHARACTERISTICS
12
−10 V
−7.0 V
−5.0 V
9
12
−2.2 V
T = 25°C
J
V
DS
≥ −10 V
−2.0 V
−1.8 V
10
8
−2.4 V
−3.2 V
−4.4 V
6
6
3
−1.6 V
−1.4 V
4
T = −55°C
J
2
0
T = 25°C
J
V
5
= −1.2 V
T = 100°C
J
GS
0
0
1
2
3
4
6
7
8
9
10
0
0.5
1
1.5
2
2.5
3
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.08
0.2
T = 25°C
J
0.07
0.06
0.05
0.04
I
= −6.0 A
D
0.15
0.1
V
= −2.5 V
= −4.5 V
GS
T = 25°C
J
V
GS
0.05
0
0.03
0.02
0
1
2
3
4
5
6
2
4
6
8
10
12
14
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
−I DRAIN CURRENT (AMPS)
D,
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
10,000
1000
100
I
V
= −6.0 A
D
V
GS
= 0 V
T = 150°C
J
= −4.5 V
GS
1.4
1.2
1.0
0.8
0.6
T = 100°C
J
−50 −25
0
25
50
75
100 125
150
2
4
6
8
10
12
14
16
18
20
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Drain−to−Source Leakage Current
Figure 5. On−Resistance Variation with
versus Voltage
Temperature
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3
NTF6P02T3
TYPICAL ELECTRICAL CHARACTERISTICS
3000
2400
1800
1200
5
20
V
DS
= 0 V
V
GS
= 0 V
Q
T
T = 25°C
J
C
iss
−V
DS
gs
4
3
2
16
12
8
−V
GS
C
rss
Q
Q
gd
C
iss
I
= −6.0 A
D
C
oss
600
0
4
0
1
0
T = 25°C
J
C
rss
−V
GS
−V
DS
10
5
0
5
10
15
20
0
4
8
12
16
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
Q , TOTAL GATE CHARGE (nC)
g
(VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
7
1000
100
V
= −16 V
= −3.0 A
= −4.5 V
DD
V
GS
= 0 V
I
D
6
5
4
3
2
T = 25°C
J
V
GS
t
t
d(off)
t
f
t
r
10
1
d(on)
1
0
1
10
R , GATE RESISTANCE (W)
100
0.3
0.6
0.9
1.2
−V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
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4
NTF6P02T3
TYPICAL ELECTRICAL CHARACTERISTICS
1
D = 0.5
0.2
0.1
NORMALIZED TO R
AT STEADY STATE (1″ PAD)
q
JA
0.05
0.1
0.0175 W 0.0710 W 0.2706 W 0.5779 W 0.7086 W
0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F
AMBIENT
0.02
CHIP
JUNCTION
0.01
SINGLE PULSE
0.01
1.0E-03
1.0E-02
1.0E-01
1.0E+00
t, TIME (s)
1.0E+01
1.0E+02
1.0E+03
Figure 11. FET Thermal Response
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5
NTF6P02T3
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
NOTES:
ꢀꢁ1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
ꢀꢁ2. CONTROLLING DIMENSION: INCH.
D
b1
MILLIMETERS
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
−−−
1.75
7.00
−
MAX
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
−−−
2.00
7.30
10°
4
2
H
E
E
1
3
b
e1
e
0.069
0.276
−
0.078
0.287
10°
H
E
q
C
q
STYLE 3:
PIN 1. GATE
2. DRAIN
A
0.08 (0003)
3. SOURCE
4. DRAIN
A1
L
L1
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
1.5
0.059
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTF6P02T3/D
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