NTGS3443T2G [ONSEMI]
单 P 沟道，功率 MOSFET，-20V，-4.4A，65mΩ;
| 型号： | NTGS3443T2G |
| 厂家： | 
ONSEMI |
| 描述： | 单 P 沟道，功率 MOSFET，-20V，-4.4A，65mΩ |
| 文件： | 总6页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTGS3443T1
Power MOSFET
2 Amps, 20 Volts
P−Channel TSOP−6
Features
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• Ultra Low R
DS(on)
• Higher Efficiency Extending Battery Life
• Miniature TSOP6 Surface Mount Package
2 AMPERES
20 VOLTS
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
R
DS(on) = 65 mW
Applications
P−Channel
• Power Management in Portable and Battery−Powered Products, i.e.:
1 2 5 6
Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
3
Drain−to−Source Voltage
V
−20
Volts
Volts
DSS
Gate−to−Source Voltage − Continuous
V
"12
GS
4
Thermal Resistance
Junction−to−Ambient (Note 1)
R
P
I
244
0.5
−2.2
−10
°C/W
Watts
Amps
Amps
q
JA
d
Total Power Dissipation @ T = 25°C
A
MARKING
DIAGRAM
Drain Current − Continuous @ T = 25°C
A
D
− Pulsed Drain Current (T t 10 mS)
I
DM
p
Thermal Resistance
Junction−to−Ambient (Note 2)
R
P
I
128
1.0
−3.1
−14
°C/W
Watts
Amps
Amps
443
W
TSOP−6
CASE 318G
Style 1
q
JA
d
Total Power Dissipation @ T = 25°C
A
Drain Current − Continuous @ T = 25°C
A
D
− Pulsed Drain Current (T t 10 mS)
I
DM
p
Thermal Resistance
443
W
= Device Code
= Work Week
Junction−to−Ambient (Note 3)
R
P
I
62.5
2.0
−4.4
−20
°C/W
Watts
Amps
Amps
q
JA
d
Total Power Dissipation @ T = 25°C
A
Drain Current − Continuous @ T = 25°C
A
D
− Pulsed Drain Current (T t 10 mS)
I
DM
p
PIN ASSIGNMENT
Operating and Storage Temperature Range
T , T
J
−55 to
150
°C
stg
Drain Drain Source
4
6
5
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
T
L
260
°C
1. Minimum FR−4 or G−10PCB, operating to steady state.
2. Mounted onto a 2 in square FR−4 board (1″ sq. 2 oz. cu. 0.06″ thick single
sided), operating to steady state.
3. Mounted onto a 2 in square FR−4 board (1″ sq. 2 oz. cu. 0.06″ thick single
sided), t t 5.0 seconds.
1
2
3
Drain Drain Gate
ORDERING INFORMATION
†
Device
Package
Shipping
NTGS3443T1
TSOP−6
TSOP−6
3000 Tape & Reel
3000 Tape & Reel
NTGS3443T1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
December, 2003 − Rev. 2
NTGS3443T1/D
NTGS3443T1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 4 & 5)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
V
Vdc
(BR)DSS
(V = 0 Vdc, I = −10 mA)
−20
−
−
GS
D
Zero Gate Voltage Drain Current
(V = 0 Vdc, V = −20 Vdc, T = 25°C)
I
mAdc
DSS
−
−
−
−
−1.0
−5.0
GS
DS
J
(V = 0 Vdc, V = −20 Vdc, T = 70°C)
GS
DS
J
Gate−Body Leakage Current
(V = −12 Vdc, V = 0 Vdc)
I
I
nAdc
nAdc
GSS
−
−
−
−
−100
100
GS
DS
Gate−Body Leakage Current
(V = +12 Vdc, V = 0 Vdc)
GSS
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
Vdc
(V = V , I = −250 mAdc)
−0.60
−0.95
−1.50
DS
GS
D
Static Drain−Source On−State Resistance
(V = −4.5 Vdc, I = −4.4 Adc)
R
W
DS(on)
−
−
−
0.058
0.082
0.092
0.065
0.090
0.100
GS
D
(V = −2.7 Vdc, I = −3.7 Adc)
GS
D
(V = −2.5 Vdc, I = −3.5 Adc)
GS
D
Forward Transconductance
(V = −10 Vdc, I = −4.4 Adc)
g
FS
mhos
−
8.8
−
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
565
320
120
−
−
−
pF
pF
pF
iss
(V = −5.0 Vdc, V = 0 Vdc,
DS
GS
Output Capacitance
C
oss
f = 1.0 MHz)
Reverse Transfer Capacitance
C
rss
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
−
−
−
−
−
−
−
10
18
25
45
50
50
15
−
ns
ns
d(on)
Rise Time
t
r
(V = −20 Vdc, I = −1.0 Adc,
DD
D
V
GS
= −4.5 Vdc, R = 6.0 W)
g
Turn−Off Delay Time
Fall Time
t
30
ns
d(off)
t
f
31
ns
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Q
7.5
1.4
2.9
nC
nC
nC
tot
gs
gd
(V = −10 Vdc, V = −4.5 Vdc,
DS
GS
Q
Q
I
D
= −4.4 Adc)
−
BODY−DRAIN DIODE RATINGS
Diode Forward On−Voltage
(I = −1.7 Adc, V = 0 Vdc)
V
−
−
−0.83
30
−1.2
−
Vdc
ns
S
GS
SD
Reverse Recovery Time
(I = −1.7 Adc, dI /dt = 100 A/ms)
t
rr
S
S
4. Indicates Pulse Test: P.W. = 300 msec max, Duty Cycle = 2%.
5. Handling precautions to protect against electrostatic discharge is mandatory.
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2
NTGS3443T1
TYPICAL ELECTRICAL CHARACTERISTICS
8
8
V
GS
= −5 V
V
GS
= −2.5 V
V
DS
≥ = −10 V
T = 25°C
J
6
4
2
0
6
4
2
0
V
= −3 V
GS
V
= −4.5 V
GS
V
= −4 V
= −3.5 V
GS
V
GS
V
= −2 V
GS
T = 25°C
J
T = 125°C
J
T = −55°C
J
V
GS
= −1.5 V
1.6
0
0.4
0.8
1.2
2
0.6
1
1.4
1.8
2.2
2.6
3
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.16
0.4
0.35
0.3
T = 25°C
J
I
= −4.4 A
D
T = 25°C
J
0.14
0.12
0.1
V
GS
= −2.5 V
0.25
0.2
V
= −2.7 V
= −4.5 V
7
GS
0.15
0.1
0.08
0.06
0.04
V
GS
0.05
0
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
6
8
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
−I DRAIN CURRENT (AMPS)
D,
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100
10
1.5
T = 125°C
J
I
V
= −4.4 A
D
1.4
1.3
= −4.5 V
GS
T = 100°C
J
1.2
1.1
1
T = 25°C
J
1
0.9
0.8
0.7
0.1
V
= 0 V
GS
0.01
0
4
8
12
16
20
−50
−25
0
25
50
75
100
125
150
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
Figure 5. On−Resistance Variation with
Temperature
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3
NTGS3443T1
TYPICAL ELECTRICAL CHARACTERISTICS
5
1200
1000
800
600
400
200
0
QT
T = 25°C
J
V
GS
= 0 V
V
GS
4
3
2
1
0
Q1
Q2
C
iss
C
C
oss
T = 25°C
J
I
D
= −4.4 A
rss
1
0
2
4
6
8
10
12 14
16 18 20
0
2
3
4
5
6
7
8
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Q
TOTAL GATE CHARGE (nC)
g,
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1.3
4
V
GS
= 0 V
I
D
= −250 mA
1.2
1.1
3
2
T = 150°C
J
1
T = 25°C
J
0.9
0.8
0.7
1
0.6
−50
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
−25
0
25
50
75
100 125
150
T
J,
JUNCTION TEMPERATURE (°C)
−V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
Figure 9. Gate Threshold Voltage Variation
with Temperature
Figure 10. Diode Forward Voltage vs. Current
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4
NTGS3443T1
TYPICAL ELECTRICAL CHARACTERISTICS
20
16
12
8
4
0
0.01
0.10
1.00
10.00
100.00
TIME (sec)
Figure 11. Single Pulse Power
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
1E−02
0.01
1E−04
1E−03
1E−01
1E+00
1E+01
1E+02
1E+03
SQUARE WAVE PULSE DURATION (sec)
Figure 12. Normalized Thermal Transient Impedance, Junction−to−Ambient
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5
NTGS3443T1
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
A
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
L
6
5
2
4
B
S
1
3
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
D
G
A
B
C
D
G
H
J
K
L
M
S
2.90
1.30
0.90
0.25
0.85
3.10 0.1142 0.1220
1.70 0.0512 0.0669
1.10 0.0354 0.0433
0.50 0.0098 0.0197
1.05 0.0335 0.0413
M
J
0.013 0.100 0.0005 0.0040
C
0.05 (0.002)
0.10
0.20
1.25
0
0.26 0.0040 0.0102
0.60 0.0079 0.0236
1.55 0.0493 0.0610
K
H
10
0
10
_
_
_
_
2.50
3.00 0.0985 0.1181
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
SOLDERING FOOTPRINT*
2.4
0.094
0.95
0.037
1.9
0.075
0.95
0.037
0.7
0.028
1.0
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
Figure 13. TSOP−6
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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NTGS3443T1/D
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