NTH4LN061N60S5H [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 41 A, 61 mΩ, TO-247-4L;
| 型号： | NTH4LN061N60S5H |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 41 A, 61 mΩ, TO-247-4L |
| 文件： | 总7页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, SUPERFET),
FAST, TO247-4L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
600 V
61 mW @ 10 V
41 A
600 V, 61 mW, 41 A
D
NTH4LN061N60S5H
Description
G
The SUPERFET V MOSFET FAST series helps maximize system
efficiency by the extremely low switching losses in hard switching
application.
S1: Driver Source
S2: Power Source
S1
S2
N−CHANNEL MOSFET
Features
650 V @ T = 150C / Typ. R
= 48.8 mW
J
DS(on)
100% Avalanche Tested
Pb−Free, Halogen Free / BFR Free and RoHS Compliant
Applications
Telecom / Server Power Supplies
EV Charger / UPS / Solar / Industrial Power Supplies
D
S2
S1
G
MAXIMUM RATINGS (T = 25C unless otherwise noted)
TO247−4L
CASE 340CJ
J
Parameter
Drain−to−Source Voltage
Symbol
Value
600
30
30
41
Unit
V
V
DSS
Gate−to−Source Voltage
DC
V
GS
V
MARKING DIAGRAM
AC (f > 1 Hz)
Continuous Drain Current
T
= 25C
= 100C
= 25C
= 25C
I
A
C
D
T
C
25
NTH4LN061
N60S5H
AYWWZZ
Power Dissipation
T
T
P
250
144
144
W
A
C
D
Pulsed Drain Current (Note 1)
I
DM
C
Pulsed Source Current
(Body Diode) (Note 1)
I
SM
Operating Junction and Storage Temperature
Range
T , T
−55 to
+150
C
J
stg
NTH4LN061N60S5H = Specific Device Code
A
Y
= Assembly Location
= Year
Source Current (Body Diode)
I
41
A
S
Single Pulse Avalanche Energy
I = 6.7 A,
G
E
AS
376
mJ
L
R
WW = Work Week
ZZ
= 25 W
= Lot Traceability
Avalanche Current
I
AS
6.7
2.5
120
20
A
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
E
AR
mJ
dv/dt
V/ns
ORDERING INFORMATION
Peak Diode Recovery dv/dt (Note 2)
Device
NTH4LN061N60S5H
Package
Shipping
Lead Temperature for Soldering Purposes
(1/8 from case for 10 seconds)
T
260
C
L
TO247−4L
30 Units /
Tube
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I 20.5 A, di/dt 200 A/ms, V 400 V, starting T = 25C.
SD
DD
J
Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
October, 2022 − Rev. 1
NTH4LN061N60S5H/D
NTH4LN061N60S5H
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
0.5
Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
C/W
q
JC
R
40
q
JA
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 1 mA, T = 25C
600
−
−
−
V
(BR)DSS
GS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
= 10 mA, Referenced to 25_C
−
630
mV/_C
(BR)DSS
D
DT
J
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= 0 V, V = 600 V, T = 25C
−
−
−
−
2
mA
DSS
GSS
DS
J
I
V
GS
= 30 V, V = 0 V
100
nA
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
= 10 V, I = 20.5 A, T = 25C
−
2.7
−
48.8
−
61
4.3
−
mW
V
DS(on)
GS
D
J
V
V
GS
= V , I = 4.4 mA, T = 25C
DS D J
GS(TH)
Forward Transconductance
g
FS
V
DS
= 20 V, I = 20.5 A
41.7
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
DS
= 400 V, V = 0 V, f = 250 kHz
−
−
−
4157
60.1
935
−
−
−
pF
ISS
GS
Output Capacitance
C
OSS
Time Related Output Capacitance
C
I = Constant, V = 0 to 400 V,
D DS
OSS(tr)
V
GS
= 0 V
Energy Related Output Capacitance
Total Gate Charge
C
V
= 0 to 400 V, V = 0 V
−
−
−
−
−
100
74.2
20.1
19.7
0.7
−
−
−
−
−
OSS(er)
DS
GS
Q
V
= 400 V, I = 20.5 A,
nC
G(TOT)
DD D
V
GS
= 10 V
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
Q
GS
GD
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
V
= 0/10 V, V = 400 V,
−
−
−
−
31.9
9.08
82.4
2.64
−
−
−
−
ns
d(ON)
GS
D
DD
I
= 20.5 A, R = 4.7 W
G
t
r
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
I
= 20.5 A, V = 0 V, T = 25C
−
−
−
−
1.2
−
V
SD
RR
SD
GS
J
t
V
= 0 V, I = 20.5 A,
416
7405
ns
nC
GS
SD
dI/dt =100 A/ms, V = 400 V
DD
Q
−
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTH4LN061N60S5H
TYPICAL CHARACTERISTICS
80
70
60
50
40
30
20
10
0
1000
T
VDS=20V
J=25°C
100
10
V
GS=4V
GS=4.5V
GS=5V
VGS=6V
GS=7V
V
V
T
J=−55°C
V
T
J=25°C
VGS=10V
T
J=150°C
1
0
5
10
15
20
3
4
5
6
7
VDS , Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
120
100
80
60
40
20
0
1000
100
10
T
VGS=0V
J=25°C
1
=150°C
TJ
VGS=10V
GS=20V
=25°C
TJ
V
=−55°C
TJ
0.1
0
10
20
30
40
50
60
0
0.2
0.4
0.6
0.8
1
1.2
ID, Drain Current (A)
VSD, Diode Forward Voltage (V)
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Diode Forward Voltage vs. Source
Current
Current and Gate Voltage
105
10
8
ID =20.5A
VGS=0V
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
T
J=25°C
104
103
102
101
100
10−1
f=250KHz
6
4
2
C
ISS
OSS
RSS
C
VDD=130V
VDD=400V
C
0
0
100
200
300
400
500
600
0
10
20
30
40
50
60 70
80
VDS, Drain to Source Voltage (V)
QG, Gate Charge (nC)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
NTH4LN061N60S5H
TYPICAL CHARACTERISTICS
1.2
1.15
1.1
3
VGS=0V
ID=10mA
ID=20.5A
VGS=10V
2.5
2
1.5
1
1.05
1
0.95
0.9
0.5
0.85
0.8
0
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25 50 75 100 125 150 175
T
T
J, Junction Temperature (°C)
J, Junction Temperature (°C)
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
40
35
30
25
20
15
10
5
T
C=25°C
102
101
T
J=150°C
Single Pulse
Limited by RDS(ON)
100
pulseDuration=10u
pulseDuration=100u
pulseDuration=1m
pulseDuration=10m
pulseDuration=DC
10−1
0
0.1
1
10
100
1000
25
50
75
100
125
150
VDS , Drain to Source Voltage (V)
T
C, Case Temperature (°C)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
14
12
10
8
6
4
2
EOSS
0
0
100
200
300
400
500
600
VDS, Drain to Source Voltage (V)
Figure 11. Eoss vs. Drain−to−Source Voltage
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4
NTH4LN061N60S5H
TYPICAL CHARACTERISTICS
1
D=0 is Single Pulse
0.1
0.01
D=0.00
D=0.01
D=0.02
D=0.05
D=0.10
D=0.20
D=0.50
Notes:
Z
T
JC (t)=0.5C/W Max
PPDM
=PDPM xZ xZ(t)+T
JM
JC
C
t1
Duty Cycle,D=t1/t2
t2
0.001
10−5
10−4
10−3
10−2
10−1
100
t,Rectangular Pulse Duration(s)
Figure 12. Transient Thermal Impedance
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
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5
NTH4LN061N60S5H
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
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6
NTH4LN061N60S5H
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